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Avto Tavkhelidze

    Avto Tavkhelidze

    Spectroscopic ellipsometry has been applied at room temperature to a multilayer device structure with plain and nanograting-embedded Si layer on the top. In both cases, the real and imaginary parts of the complex dielectric function of... more
    Spectroscopic ellipsometry has been applied at room temperature to a multilayer device structure with plain and nanograting-embedded Si layer on the top. In both cases, the real and imaginary parts of the complex dielectric function of the top layer have been retrieved. In nanograting case, ellipsometric data were collected in planar diffraction geometry. A profound change in dielectric function in the photon energy region between 1.5 and 3.5 eV is established for nanograting-embedded Si layer compared to plain Si layer. Both real and imaginary parts of the former are no longer Si-like and resemble more those for metals. The maximum of interband density-of-states for optical transitions is positioned at 2.1 eV and coincides with the energy of optical transitions from the main irradiative eigenstate. The obtained results are discussed in terms of geometry-induced doping changes in interband density of states.
    An experimental investigation is presented into the magnitude and sign of nonflatness for Ag/Cu electrodes obtained by splitting a Si/Ti/Ag/Cu stack produced by Cu electrodeposition. The characteristic is considered in relation to... more
    An experimental investigation is presented into the magnitude and sign of nonflatness for Ag/Cu electrodes obtained by splitting a Si/Ti/Ag/Cu stack produced by Cu electrodeposition. The characteristic is considered in relation to electrolyte temperature. The contact area between a Si/Ti and a Ag/Cu electrode is estimated. The conformality of the two electrode surfaces is essential for creating tunnel-effect thermoelectric coolers
    Technology of the fabrication of multilayer structures with controllable adhesion interaction between metal films composing these structures is considered. Control of adhesion interaction was attained by modifying the surface of... more
    Technology of the fabrication of multilayer structures with controllable adhesion interaction between metal films composing these structures is considered. Control of adhesion interaction was attained by modifying the surface of corresponding metal film until an adhesion bond appeared in vacuum and by changing technological parameters. The adhesion strength was evaluated by the temperature of structure splitting due to the difference in the coefficients of thermal expansion of the substrate and ultimate metal electrode. The analysis of surfaces prior to and after structure splitting was carried out optically using the Michelson interferometer.
    ABSTRACT
    Modification of properties of metal films caused by indents on their surface are studied. It is shown that indents on a film surface lead to quantum state depression (QSD), i.e., a decrease in the density of quantum states of a free... more
    Modification of properties of metal films caused by indents on their surface are studied. It is shown that indents on a film surface lead to quantum state depression (QSD), i.e., a decrease in the density of quantum states of a free electron. The density of the wave vector in the k-space decreases throughout the Fermi sphere. At the same time,
    ABSTRACT: Changes in the quantum well properties caused by periodic ridges in the surface were studied within the limit of quantum theory of free electrons. The authors show that due to destructive interference of de Broglie waves, some... more
    ABSTRACT: Changes in the quantum well properties caused by periodic ridges in the surface were studied within the limit of quantum theory of free electrons. The authors show that due to destructive interference of de Broglie waves, some quantum states become quantum ...
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