- Particle Size, Nanostructures, Graphite, Neutron Stars, Crystallization, Nanoelectronics, and 7 moreTerahertz Electronics, Semiconductor Devices, (nano & Micro Electronics) &(software Programing), Technology, III-V Semiconductors, Microwave and Millimetre Wave Radar and Imaging, and RF/microwave/millimeter-wave integrated circuits and systemsedit
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The Effect of Annealing Temperatures on Self-Aligned Replacement (Damascene) TaCN–TaN-Stacked Gate pMOSFETs................ J. Pan, C. Woo, M.-V. Ngo, J. Xie, D. Matsumoto, D. Murthy, J.-S. Goo, Q. Xiang, and M.-R. Lin 581 A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SO...more
AbstractBy using a Monte Carlo simulator, the static and dynamic characteristics of 50-nm-gate AlInAsGaInAs -doped high-electron mobility transistors (HEMTs) are investigated. The Monte Carlo model includes some important effects that... more
AbstractBy using a Monte Carlo simulator, the static and dynamic characteristics of 50-nm-gate AlInAsGaInAs -doped high-electron mobility transistors (HEMTs) are investigated. The Monte Carlo model includes some important effects that are ...
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... indoor YANN COCHERIL, RODOLPHE VAUZELLE, LILIAN AVENEAU, MAJDI KHOUDEIR Laboratoire SIC, FRE-CNRS 2731, Université de Poitiers Bat. ... Network). Cependant leur mise en oeuvre pose de nouveaux probl`emes. ...
A comparison of the dynamic and noise behavior between InAlAs/InGaAs Double-Gate (DG) and standard High Electron Mobility Transistors (HEMTs) is performed by means of Monte Carlo simulations. The DG-HEMT exhibits a considerably improved... more
A comparison of the dynamic and noise behavior between InAlAs/InGaAs Double-Gate (DG) and standard High Electron Mobility Transistors (HEMTs) is performed by means of Monte Carlo simulations. The DG-HEMT exhibits a considerably improved extrinsic behavior (especially fmax) over the corresponding standard HEMT, mainly due to the lower gate resistance. Concerning noise, even if the intrinsic P, R and C parameters show a modest improvement in the DG-HEMT, the extrinsic minimum noise figure Fmin reveals a significantly better extrinsic noise performance.
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Electrical characterization and modeling of 2 times 50 mum gatewidth InAs/AlSb HEMTs with 225 nm gate-length have been performed. The fabricated devices exhibited a transconductance gm of 650 mS/mm, an extrinsic cutoff frequency fT and an... more
Electrical characterization and modeling of 2 times 50 mum gatewidth InAs/AlSb HEMTs with 225 nm gate-length have been performed. The fabricated devices exhibited a transconductance gm of 650 mS/mm, an extrinsic cutoff frequency fT and an extrinsic maximum frequency of oscillation fmax of 120 and 90 GHz, respectively, already at a low VDS of 0.2 V. A minimum noise figure
Research Interests: Modeling, High Frequency, Noise, Leakage Current, Power Consumption, and 15 moreOscillations, Low Power, High Electron Mobility Transistors, Low Power Electronics, Heterostructures, Heterostructure Devices, Low Noise, S-parameters, Noise Figure, Electrical And Electronic Engineering, S-Parameter, HEMT, Cut-Off Frequency, Power Gain, and Field effect transistor
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In this work we investigate, by means of Monte Carlo simulations, the physics of the recently observed emission of THz radiation at low temperature (4.2 K) from InGaAs/InAlAs lattice-matched high electron mobility transistors, HEMTs. The... more
In this work we investigate, by means of Monte Carlo simulations, the physics of the recently observed emission of THz radiation at low temperature (4.2 K) from InGaAs/InAlAs lattice-matched high electron mobility transistors, HEMTs. The spectrum of the emitted signal consists of two maxima; the one at lower frequency (around 1 THz) is sensitive to UDS and UGS, while the
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Research Interests: Power Electronics, III-V Semiconductors, Field effect transistors, High Frequency, Noise, and 10 moreTemperature, Low Power, Low noise amplifier, High Electron Mobility Transistors, Low Power Electronics, Room Temperature, Impact Ionization, Electron Devices, Amplifier, and Electrical And Electronic Engineering
TeraHertz emission from High Electron Mobility Transistors has been recently measured from experiments. The experiments show emission spectra with two peaks in the TeraHertz range: one around 1 THz is sensitive to drain and gate voltages,... more
TeraHertz emission from High Electron Mobility Transistors has been recently measured from experiments. The experiments show emission spectra with two peaks in the TeraHertz range: one around 1 THz is sensitive to drain and gate voltages, and another one around 5 THz which is fixed. In order to get physical insight into the microscopic mechanism at the basis of the radiation emission we have performed a Monte Carlo simulation of the measured transistors using the current noise spectra as sensitive probes to detect the presence of electrical instabilities. Numerical results are found to be in good agreement with experiments confirming the presence of an oscillatory dynamics in the TeraHertz range.
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The authors report on tunable terahertz resonant detection of two 1.55 mum cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. The fundamental plasma resonant frequency and its odd harmonics can be... more
The authors report on tunable terahertz resonant detection of two 1.55 mum cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. The fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 0-600 GHz. Amplification of photoresponse under applied DC drain-source current is demonstrated.
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ABSTRACT
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We have developed technology based on GalnAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-branch junctions (TBJs), Y-branch junctions (YBJs)). Then we present DC... more
We have developed technology based on GalnAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-branch junctions (TBJs), Y-branch junctions (YBJs)). Then we present DC characterization of TBJs to show the transition from ballistic to ohmic transport at room temperature and also experimental results for Y-branch junctions (YBJs).
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ABSTRACT State of the art metamorphic InxAl1-xAs/In xGa1-x 0.1 μm gate HEMTs with different Indium compositions x=0.33, 0.4 and 0.5 have been realized and characterized. A cutoff frequency fT=195 GHz is obtained for an indium content... more
ABSTRACT State of the art metamorphic InxAl1-xAs/In xGa1-x 0.1 μm gate HEMTs with different Indium compositions x=0.33, 0.4 and 0.5 have been realized and characterized. A cutoff frequency fT=195 GHz is obtained for an indium content x=0.4, which is close to the value obtained with LM-HEMT on InP realized with the same technological process
ABSTRACT State-of-the art metamorphic In0.52Al0.48As/In0.53Ga0.47 As HEMTs on a GaAs substrate with 60 nanometer gate length is reported. The DC and microwave performance were investigated. Typical drain-to-source current Ids of 600 mA/mm... more
ABSTRACT State-of-the art metamorphic In0.52Al0.48As/In0.53Ga0.47 As HEMTs on a GaAs substrate with 60 nanometer gate length is reported. The DC and microwave performance were investigated. Typical drain-to-source current Ids of 600 mA/mm and extrinsic transconductance of 850 mS/mm were obtained with our devices. Cutoff frequency fT and maximum oscillation frequency fmax are 260 GHz and 490 GHz respectively. To our knowledge, these frequency performances are the highest ever reported for HEMTs on GaAs substrate
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Metamorphic HEMTs are attractive candidates for microwave and mm-wave low noise and power applications. Using the metamorphic concept, high quality relaxed heterostructures with arbitrary chosen In content can be grown. Metamorphic... more
Metamorphic HEMTs are attractive candidates for microwave and mm-wave low noise and power applications. Using the metamorphic concept, high quality relaxed heterostructures with arbitrary chosen In content can be grown. Metamorphic discrete HEMTs and metamorphic MMICs showing electrical performance similar to InP based devices and circuits have been processed. Preliminary reliability data show that the degradation mechanisms are likely due to the device process technology and not the metamorphic nature of the active layer
100nm T-gates InP double-gate HEMTs (DG-HEMT) have been fabricated by use of transferred substrate technique. Theses devices are compared with standard single 100nm T-gate HEMT. The maximum extrinsic transconductance gm of DG-HEMT is two... more
100nm T-gates InP double-gate HEMTs (DG-HEMT) have been fabricated by use of transferred substrate technique. Theses devices are compared with standard single 100nm T-gate HEMT. The maximum extrinsic transconductance gm of DG-HEMT is two times higher than the HEMT one, and the extrinsic output conductance gd is significantly reduced with DG-HEMT. The combined high gm and low gd induced an
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Nonlinear electrical characteristics of three-branch junction (TBJ) devices are investigated experimentally and numerically as a function of frequency. Based on the bell-shaped output voltage obtained under push-pull input we analyze the... more
Nonlinear electrical characteristics of three-branch junction (TBJ) devices are investigated experimentally and numerically as a function of frequency. Based on the bell-shaped output voltage obtained under push-pull input we analyze the low frequency performance (<1 MHz) of TBJs operating as mixers. Concerning high frequency, by means of Monte Carlo simulations we illustrate the functionality of the device as a frequency
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ABSTRACT In this paper, we report on high frequency performances of AlSb/InAs high electron mobility transistor (HEMT) with 120nm gate length at room temperature. The excellent combined cut-off frequencies fT/fmax of 290/335 GHz... more
ABSTRACT In this paper, we report on high frequency performances of AlSb/InAs high electron mobility transistor (HEMT) with 120nm gate length at room temperature. The excellent combined cut-off frequencies fT/fmax of 290/335 GHz simultaneously obtained at drain bias of 0.36V is another demonstration of the ability of AlSb/InAs HEMT for high frequency operation with low-power consumption. Small-signal equivalent circuit parameters have been extracted.
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... More information about XRD with an Asvalved-craker Riber VAC500, an Sb valved-measurements can be found in [2]. ... IRCICA Laboratory (Institut de Recherche sur les Composants max logiciels et materiels pour... more
... More information about XRD with an Asvalved-craker Riber VAC500, an Sb valved-measurements can be found in [2]. ... IRCICA Laboratory (Institut de Recherche sur les Composants max logiciels et materiels pour l'Information et la Communication Avancee) in France. 100 ...
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this works reports on speed and high performance benchmarking of low band gap III-V based-HEMTs versus advanced n-MOSFET in low drain voltage regime (few kT/q). In this low bias condition, figure of merits such as, fT are higher and... more
this works reports on speed and high performance benchmarking of low band gap III-V based-HEMTs versus advanced n-MOSFET in low drain voltage regime (few kT/q). In this low bias condition, figure of merits such as, fT are higher and intrinsic gate delay and energy are almost one order of magnitude lower in the case of III-V based-devices (two orders of
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By means of a 2D Monte Carlo simulation of 50-nm-gate lattice matched AlInAs/InGaAs HEMTs, we show the benefits of using bufferless technology in terms of improvement of the cutoff frequency and noise characteristics. We have found an... more
By means of a 2D Monte Carlo simulation of 50-nm-gate lattice matched AlInAs/InGaAs HEMTs, we show the benefits of using bufferless technology in terms of improvement of the cutoff frequency and noise characteristics. We have found an increase of approximately a 15% in f c, ft and fmax. Moreover, though only a slight reduction of 0.2 dB in the minimum
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We analyze the influence of the surface charge on the operation of ballistic T-branch junctions based on InAlAs/InGaAs layers by means of a semi-classical 2-D Monte Carlo simulator. For this sake we propose a new self-consistent model in... more
We analyze the influence of the surface charge on the operation of ballistic T-branch junctions based on InAlAs/InGaAs layers by means of a semi-classical 2-D Monte Carlo simulator. For this sake we propose a new self-consistent model in which the local value of the surface charge is dynamically adjusted depending on the surrounding carrier density. We will show that the
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ABSTRACT This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As double-gate HEMTs with sub-micron gate lengths. These devices have obtained a maximum extrinsic transconductance gm of 2650 mS/mm... more
ABSTRACT This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As double-gate HEMTs with sub-micron gate lengths. These devices have obtained a maximum extrinsic transconductance gm of 2650 mS/mm with a corresponding drain current Id equal to 310 mA/mm. This extrinsic transconductance is the highest value ever reported for any transistor. Due to this high extrinsic transconductance, the ratio gm/Id is 8V-1 indicating the high charge control efficiency. Low output conductance gd is obtained, denoting the reduction of short channel effects. The combined high transconductance and the low output conductance induce an extremely high intrinsic unloaded voltage gain (gm/gd) of 87.
We have developed technology based on GalnAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-branch junctions (TBJs), Y-branch junctions (YBJs)). Then we present DC... more
We have developed technology based on GalnAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-branch junctions (TBJs), Y-branch junctions (YBJs)). Then we present DC characterization of TBJs to show the transition from ballistic to ohmic transport at room temperature and also experimental results for Y-branch junctions (YBJs).
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Abstract Room temperature DC and broadband HF measurements of a double Y-branch junction are presented and discussed. Nonlinear DC characteristics of the devices at room temperature are observed and HF to DC conversion up to 20 GHz at... more
Abstract Room temperature DC and broadband HF measurements of a double Y-branch junction are presented and discussed. Nonlinear DC characteristics of the devices at room temperature are observed and HF to DC conversion up to 20 GHz at room temperature is ...
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The paper presents the state of the art and the future trends in the field of AlInAs/GaInAs/InP based nanometre devices, in particular ballistic T junctions and plasma wave transistors.
We have developed technology based on GaInAs/AlInAs for building ballistic devices working at room temperature. We first present here processes for passive and active devices (T-branch junctions (TBJs), Y-branch junctions (YBJs) and TBJs... more
We have developed technology based on GaInAs/AlInAs for building ballistic devices working at room temperature. We first present here processes for passive and active devices (T-branch junctions (TBJs), Y-branch junctions (YBJs) and TBJs with Schottky gates. Then, we present DC characterization of TBJs to prove the ballistic behaviour and new results for YBJs.
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Abstract To fulfill high-speed and low-power specifications for both logic and analog applications, III–V FETs with high-κ gate dielectric stack are especially appealing, in particular for their ability to operate under low power supply... more
Abstract To fulfill high-speed and low-power specifications for both logic and analog applications, III–V FETs with high-κ gate dielectric stack are especially appealing, in particular for their ability to operate under low power supply voltage. Using ...
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ABSTRACT The channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate bias. During the last few years Terahertz... more
ABSTRACT The channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate bias. During the last few years Terahertz detection and emission related to plasma wave instabilities in nanometre size field effect transistors was demonstrated experimentally. In this work we review the recent experimental results on the resonant plasma wave detection and emission at room temperature.
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We measure the electron phase-coherence time tauphi up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of tauphi is quantitatively consistent with... more
We measure the electron phase-coherence time tauphi up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of tauphi is quantitatively consistent with the two-dimensional model of electron-electron interactions in disordered systems. In our sample, tauphi is two to four times larger than previously reported in GaAs quantum dots. We
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We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequenciesfT/fmaxof 100/125 GHz together... more
We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequenciesfT/fmaxof 100/125 GHz together with minimum noise figureNFmin=0.5 dB and associated gainGass=12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.