Agilent HMMC-5038 38 GHZ Lna: Data Sheet

Agilent HMMC-5038 38 GHz LNA
Data Sheet
Features
Low Noise Figure: 4.8 dB Frequency Range: 37 - 40 GHz High Gain (Adjustable): 3 v, 120 mA @ 23 dB Gain 3 v, 80 mA @ 20 dB Gain 50 Input/Output Matching Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1630 760 m (64.2 29.9 mils) 10 m (0.4 mils) 127 15 m (5.0 0.6 mils) 80 80 m (3.1 3.1 mils)
Description
The HMMC-5038 MMIC is a highgain low-noise amplifier (LNA) designed for communication receivers that operate from 37 GHz to 40 GHz. The gain of this four stage LNA can be adjusted by altering the gate bias of the output two, or three, stages while maintaining optimum noise figure bias for the input stage(s). Large FETs provide high power handing capability to avoid power compression. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduce assembly related performance variations and costs. The HMMC-5038 is fabricated using a PHEMT integrated circuit structure that provides good noise and gain performance.
Absolute Maximum Ratings[1]

Symbol Parameters/Conditions Drain Supply Voltages Gate Supply Voltages Total Drain Current RF Input Power Channel Temperature[2] Backside Ambient Temperature Storage Temperature Max. Assembly Temperature -55 -65 -3.0 Min. Max. 5 0 300 15 160 +125 +165 310 Units Volts Volts mA dBm C C C C
VD1,2-3-4
VG1,2,3-4 IDD Pin Tch TA Tst Tmax
[1]Absolute [2]
maximum ratings for continuous operation unless otherwise noted. Refer to DC Specifications / Physical Properties table for derating information.
1-9
DC Specifications/Physical Properties[1]
Symbol Parameters/Conditions Low Noise Drain Supply Operating Voltages First Stage Drain Supply Current (VDD = 3 V, VG1 -0.8 V) Drain Supply Current for Stage 2, 3, and 4 Combined (VDD = 3 V, VGG -0.8 V) Gate Supply Operating Voltages (IDD 120 mA) Pinch-off Voltage (VDD = 3 V, IDD 10 mA) Thermal Resistance (Channel-to-Backside at Tch = 160C) Channel Temperature[3] (TA = 125C, MTTF > 106 hrs, V DD = 3 V, IDD = 120 mA)
[2]
Min. 2
Typ. 3 22 98 -0.8
Max. 5
Units Volts mA mA Volts
VD1,2-3-4 ID1 ID2-3-4

VG1,2,3-4 VP ch-bs Tch
[1] [2]Thermal
-2
-1.2 62 150
-0.8
Volts C/Watt C
Backside ambient operating temperature TA = 25C unless otherwise noted. resistance (C/Watt) at a channel temperature T(C) can be estimated using the equation: (T) 62 [T(C)+273] / [160C+273]. [3] De-rate MTTF by a factor of two for every 8C above Tch.
RF Specifications
(TA = 25C, VDD = 3 V, IDD = 120 mA, Z0 = 50)
Symbol BW Gain Gain S21/T (RLin)MIN (RLout)MIN Isolation P-1dB NF NF/T
[1]Gain [2]
Parameters/Conditions Operating Bandwidth Small Signal Gain[1]
Min. 37 20
Typ.
Max. 40
Units GHz dB dB dB/C dB dB dB dBm
23 0.5 -.04
Small Signal Gain Flatness Temperature Coefficient of Gain Minimum Input Return Loss w/o external capacitive matching[2] Minimum Output Return Loss Reverse Isolation Output Power at 1dB Gain Compression Noise Figure[3] 8 12
12 18 50 12 4.8 +.02 5.5
dB dB/C
Temperature Coefficient of NF
may be reduced by biasing for lower I DD. Increasing IDD will increase Gain. Minimum input return may be improved by approximately 3 dB by including a small capacitive (30 fF) stub on the input transmission line. [3]Noise Figure may be further reduced by optimizing DC bias conditions.
1-10
HMMC-5038/rev.3.3
Applications
The HMMC-5038 low noise amplifier (LNA) is designed for use in digital radio communication systems and point-to-multipoint links that operate within the 37 GHz to 40 GHz frequency band. High gain and low noise temperature make it ideally suited as a front-end gain stage in the receiver. The MMIC solution is a cost effective alternative to hybrid assemblies.
transmission line. This capacitance complements the bond wire inductance to complete the input matching network. No ground wires are needed because ground connections are made with plated through-holes to the backside of the device.
Assembly Techniques
It is recommended that the RF input and RF output connections be made using either 500 line/ inch (or equivalent) gold wire mesh, or dual 0.7 mil diameter gold wire. The RF wires should be kept as short as possible to minimize inductance. The bias supply wires can be a 0.7 mil diameter gold. GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. Agilent application note #54, "GaAs MMIC ESD, Die Attach and Bonding Guidelines" provides basic information on these subjects.
Biasing and Operation

The recommended DC bias condition is with all drains connected to single 3 volt supply and all gates connected to an adjustable negative voltage supply as shown in Figure 6. The gate voltage is adjusted for a total drain supply current of typically 120 mA. Reducing the current in stages 3 and 4 will reduce the overall gain. The gain can be adjusted further by altering the current through stage 2 with little affect on noise figure. Optimum noise figure is realized with VD1= 3 to 4 volts and ID1 = 20 to 25 mA. The second, third, and fourth stage DC drain bias lines are connected internally and therefore require only a single bond wire. An additional bond wire is needed for the first stage DC drain bias, VD1. The third and fourth stage DC gate bias lines are connected internally. A total of three DC gate bond wires are required: One for VG1, one for VG2, and one for the VG3-to-VG4 connection as shown in Figure 6(b). A DC blocking capacitor is needed in the RF input transmission line only if there is DC voltage present. The RF output is AC-coupled. Optimum input match is achieved when an optional capacitive (30 fF) stub is included on the input
HMMC-5038/rev.3.3
1-11
40
VDD=3.0V, ID1=25 mA, ID234=95 mA
4 8 12 16 20 24
VDD=3.0V, ID1=25 mA, ID234=95 mA

Spec Range
(37 - 40 GHz)
4 8 12 16 Output 20 24
Input Return Loss (dB)
Small-Signal Gain (dB)
Reverse Isolation (dB)
30
20 Isolation 10
Spec Range
(37 - 40 GHz)
50
Input
36
37
38
Frequency (GHz)
39
40
41
42
43
100
36
37
38
Frequency (GHz)
39
40
41
42
43
Figure 1. Gain and Isolation versus Frequency
Figure 2. Input and Output Return Loss versus Frequency
10 8
VDD=4V, ID1=25 mA, ID234=60 to 125 mA
Noise Figure (dB)
6 4 2 0 36
37
38
Frequency (GHz)
39
40
41
42
43
Figure 3. Noise Figure versus Frequency
VDD=3V
30
20
VDD=4V, ID1=25 mA
SS Gain
30
25
15
25
Noise Figure (dB)
Pout (dBm)
Gain (dB)
20
10
P-1
20
15
15
3 40
60
80
IDS (mA)
100
120
140
10 160
0 40
60
80
100
120
10 140
ID2,3,4 (mA)
Figure 4. 38 GHz Noise Figure and Gain versus IDD
Figure 5. 38 GHz Gain and Power Performance versus IDD
1-12
HMMC-5038/rev.3.3
Gain (dB)
Gain
Output Return Loss (dB)
Gain
Optional Gold Plated Shim
(@100 pF)
Cb
To VDD DC Drain Supply Feed
VD1
VG2
VD2-3-4
RF INPUT
IN
RF OUTPUT
VG1 VG3-4
To VGG DC Gate Supply Feed
Cb
(@100 pF)
[or use VG2 wire shown in (b)]
VG2 to VG3 Jumper-Wire
(a) Single drain-supply and single gate-supply assembly.

(@100 pF)
Cb
To VDD DC Drain Supply Feed
RF INPUT
IN
RF OUTPUT
To VGG DC Gate Supply Feed
Cb
(@100 pF)
Cb
To VG3-4 DC Gate Supply Feed
(b) Separate first-stage gate bias supply. This diagram shows an optional variation to the VG2 jumper-wire bonding scheme presented in (a).
Figure 6. Common Assembly Diagrams (Note: To assure stable operation, bias supply feeds should be bypassed to ground with a capacitor, Cb > 100 nF typical.)
80 350 620 820 1070 1360 660 500 330 80 0 0 120 600 1090 0 760
HMMC-5038/rev.3.3
0 1550 1630
Figure 7. Bonding Pad Positions (Dimensions are micrometers)

This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent Technologies sales representative. 1-13
Notes:
1-14
HMMC-5038/rev.3.3

Agilent HMMC-5038 38 GHZ Lna: Data Sheet

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Agilent HMMC-5038 38 GHZ Lna: Data Sheet

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Agilent HMMC-5038 38 GHz LNA

Absolute Maximum Ratings[1]

Units Volts mA mA Volts

VD1,2-3-4 ID1 ID2-3-4

Parameters/Conditions Operating Bandwidth Small Signal Gain[1]

Units GHz dB dB dB/C dB dB dB dBm

12 18 50 12 4.8 +.02 5.5

Biasing and Operation

VDD=3.0V, ID1=25 mA, ID234=95 mA

VDD=3.0V, ID1=25 mA, ID234=95 mA

Input Return Loss (dB)

Small-Signal Gain (dB)

Reverse Isolation (dB)

Figure 1. Gain and Isolation versus Frequency

Figure 2. Input and Output Return Loss versus Frequency

VDD=4V, ID1=25 mA, ID234=60 to 125 mA

Noise Figure (dB)

Figure 3. Noise Figure versus Frequency

Noise Figure (dB)

Figure 4. 38 GHz Noise Figure and Gain versus IDD

Figure 5. 38 GHz Gain and Power Performance versus IDD

Output Return Loss (dB)

Optional Gold Plated Shim

To VDD DC Drain Supply Feed

To VGG DC Gate Supply Feed

[or use VG2 wire shown in (b)]

VG2 to VG3 Jumper-Wire

(a) Single drain-supply and single gate-supply assembly.

To VDD DC Drain Supply Feed

To VGG DC Gate Supply Feed

To VG3-4 DC Gate Supply Feed

Figure 7. Bonding Pad Positions (Dimensions are micrometers)

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