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    Design of Phase Shifter Packaging Based On Through Glass Via (TGV) Interposer

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    Navin Andrew Prince
    This document discusses the design of a MEMS phase shifter packaging using a through-glass via (TGV) interposer. A TGV wafer with tungsten vias was fabricated and its RF performance was simulated, showing increased insertion loss but decreased return loss with larger via radius and length. A one-bit MEMS switched-line phase shifter was designed using the TGV interposer as a substrate, with the RF input/output on one side of the wafer connected through vias to the phase shifter circuit on the other side. Packaging of the device is achieved by bonding it to a silicon cap.

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    Design of Phase Shifter Packaging Based On Through Glass Via (TGV) Interposer

    Uploaded by

    Navin Andrew Prince
    65 views3 pages
    This document discusses the design of a MEMS phase shifter packaging using a through-glass via (TGV) interposer. A TGV wafer with tungsten vias was fabricated and its RF performance was simulated, showing increased insertion loss but decreased return loss with larger via radius and length. A one-bit MEMS switched-line phase shifter was designed using the TGV interposer as a substrate, with the RF input/output on one side of the wafer connected through vias to the phase shifter circuit on the other side. Packaging of the device is achieved by bonding it to a silicon cap.

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    This document discusses the design of a MEMS phase shifter packaging using a through-glass via (TGV) interposer. A TGV wafer with tungsten vias was fabricated and its RF performance was simulated, showing increased insertion loss but decreased return loss with larger via radius and length. A one-bit MEMS switched-line phase shifter was designed using the TGV interposer as a substrate, with the RF input/output on one side of the wafer connected through vias to the phase shifter circuit on the other side. Packaging of the device is achieved by bonding it to a silicon cap.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    65 views3 pages

    Design of Phase Shifter Packaging Based On Through Glass Via (TGV) Interposer

    Uploaded by

    Navin Andrew Prince
    This document discusses the design of a MEMS phase shifter packaging using a through-glass via (TGV) interposer. A TGV wafer with tungsten vias was fabricated and its RF performance was simulated, showing increased insertion loss but decreased return loss with larger via radius and length. A one-bit MEMS switched-line phase shifter was designed using the TGV interposer as a substrate, with the RF input/output on one side of the wafer connected through vias to the phase shifter circuit on the other side. Packaging of the device is achieved by bonding it to a silicon cap.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 3

    DcsignufRF MEMS phascshihcrpackaginghascdunthruughglassvia(TGV) intcrpuscr

    Xiaofeng Sun, Yu Sun, Jing Zhang, Daquan Yu, Lixi Wan


    Institute of Microelectronics, Chinese Academy of Sciences
    No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, PR China
    Email: sunxiaofeng@ime.ac.cn
    PDSIaC
    Glass has good electrical, optical and mechanical
    properties as a substrate for SiP application . Through glass
    via (TGV) interposer technology can avoid complex
    fabrication processes and the using of expensive equipments
    comparing with through silicon via(TSV). In addition, it can
    lower the cost and enhance electrical performance as weil as
    reliability of the electronic package. In this paper, a kind of
    TGV wafer with tungsten(W) vias is introduced and its
    performance is simulated. Using this kind of TGV interposer,
    a one-bit MEMS switched-line phase shifer and its
    package are designed.
    1 HI0UHC0H
    MEMS phase shifer is an ideal component in moder
    communication and radar system, which has low cost, smaller
    volume and low power consumption. Because of its
    complexity and uniqueness, there is few notable breakthrough
    in recent years in the feld of MEMS device packaging,
    which therefore limits its wide usage [I].
    Glass is an excellent material for packaging because of its
    weil matched coeffcient of thermal expansion(CTE) to
    silicon, superior electrical insulation, low dielectric constant,
    high optical transparency, great hermeticity, low warping and
    resistance to corosion[2]. It is suitable for optical devices,
    and microwave devices and MEMS packaging. Glass
    packaging is now widely studied in electrical packaging [3].
    However, the glass process is not compatible with tradition al
    semiconductor process, which brings diffculties to glass
    three-dimensional packaging. It is diffcult to make vertical
    vias through glass wafer through wet etching, dry etching or
    laser drilling. Fulflling the vias with metal is also a challenge.
    In this paper, a new packaging scheme of MEMS
    phase shifer is introduced using our through glass via (TGV)
    interposer. Compared with through silicon via (TSV)
    interposer, this TGV interposer technology can avoid complex
    fabrication processes and consequently it can lower the cost.
    Z cS_H aHU SHHa0H
    We have fabricated 4 inch TGV wafer with about 2000
    tungsten pins, which is shown in Fig.l. The wafer use
    borosilicate glass as substrate and tungsten was flled in vias.
    The dielectric constant is 4.6 and the loss angle tangent (tgo)
    is 37x 10-
    6
    , which is an excellent property for device
    packaging. The diameter of tungsten pin is about 100/m and
    the pitch is about 400/m. The coefcient of thermal
    expansion(CTE) of the glass substrate is about 3.3 1O-
    6
    /k
    and it is matched with silicon and suitable for bonding with
    silicon.
    Fig.1 Photograph of TGV wafer
    Z.1 bHHa0H 01LN
    The performance of TGV was simulated using fnite
    element fll-wave method and the simulation model is shown
    in Fig.2. Two segments of CPW were connected by three
    tungsten pins and the two segments of CPW are on the
    diferent side of the TGV wafer.
    Fig.2 TGV simulation model
    The simulated results are shown in Fig.3 and Fig.4. Fig.3
    shows the insertion loss and retur loss with different radius of
    tungsten pins. In the simulation model only the radius changes
    fom 25 to 125/m. It is observed that the insertion loss
    increased with the radius, while the retur loss changes in the
    opposite way.
    2012 International Conference on Electronic Packaging Technology High Density Packaging
    978-1-4673-1681-1112/$31.00 m012 IEEE
    808

    "
    t_1t
    4'gb1L Wn
    &Tl: |=T
    *9\WM`W|%

    "

    ^@MWT
    =- ==- =
    Z
    W1W
    (a)
    (b)
    Cm
    !ATl
    d'JWJ<'
    (@ _ _ t_ 1!g

    +_[1]
    og w' h 'O
    W.!,T1|
    M\ M
    o1mm1t' m2`
    Fig.3 Simulated results of TGV with different radius: (a)
    insertion loss, (b) retu loss
    Fig.4 shows the insertion loss and retur loss with different
    length of tungsten pins. From Fig.4 it can be seen that the
    longer tungsten pins, the higher insertion loss and the lower
    retur loss were obtained.
    _:_11)
    __I_T1)
    m
    &_1_T11
    =- _ A_\_T11
    _1_1!)
    A_1_T11
    lA\,T\1
    ZV
    V
    (a)
    (b)
    ~t 7t
    t
    ___1.mQ!l
    __ttv
    Fig.4 Simulated results of TGV with different length: (a)
    insertion loss, (b) retur loss
    Z.Z cS_H 01 DDbgHaScSHcI gaCKa_c
    Here a one-bit RF MEMS switched-line phase shifer was
    designed which employs CPW as transmission line and three
    shunt capacitive-switches. The TGV wafer is used as substrate
    ofRF MEMS phase shifer. The schematic is shown in Fig.5.
    (a)
    (b)
    Fig.5 Schematic of one-bit RF MEMS switched-line phase
    shifer: (a) top view, (b) back view
    The phase shifer was built on the one side (top side) of
    TGV wafer and the input and output pad of RF signal was
    fabricated on the other side (back side) of the TGV wafer,
    which is shown in Fig.5. They are connected through tungsten
    pins. Also the MEMS switches are driven through tungsten
    pins form back side.
    The phase shifer in degree is given by:
    2"
    -(/2 -11) P(12 -11)
    Ag
    Where Ag is wavelength of RF signal, I1 and 12 are the
    lengths of reference line and delay line respectively.
    The RF MEMS phase shifer can be fabricated by a
    multilayer UV-LIGA process. Afer the phase shifer was
    fmished, it can be bonded with a silicon cap through anodic
    bon ding.
    2012 International Conference on Electronic Packaging Technology High Density Packaging 809
    Fig.6 Packaging ofRF MEMS phase shifer
    L0HCHS0H
    A kind of W flled TGV wafer is introduced and its RF
    performance is simulated. Based on the TGV interposer,
    packaging of a one-bit RF MEMS switched-line phase shifer
    is designed. It can easily realize the RF signal in and out
    through the package.
    PCKH0WcU_HcH
    This work was fnancially supported by National S&T
    Major Project with the contract NO. 2009ZX02038-003.
    Daquan Yu also appreciates the support fom the 100 Talents
    Program of The Chinese Academy of Sciences.
    c1cIcHCcS
    . Ken Gilleo, MEMS/MoMES packaging, McGraw-Hill
    (New York, 2005), pp. 65-67.
    2. Yu Sun, Daquan Yu, et al. "Development of Through
    Glass Tungsten Via Interconnect for 3D MEMS
    Packaging", 2611 1/h L/ec/oaics Packagiag
    Iechao/og:oa/eeace.pp.774-776.
    3. Cui, X. Y., D. Bhatt, et al. "Glass as a Substrate for High
    Density Electrical Interconnect," 266 16/h L/ec/oaics
    PackagiagIechao/og:oa/eeace.Vols 1-3, pp.12-17.
    2012 International Conference on Electronic Packaging Technology High Density Packaging 810

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