DISCRETE SEMICONDUCTORS

DATA SHEET

BF245A; BF245B; BF245C

N-channel silicon field-effect
transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07

1996 Jul 30

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

FEATURES

BF245A; BF245B; BF245C

PINNING

Interchangeability of drain and source connections

Frequencies up to 700 MHz.
APPLICATIONS

PIN

SYMBOL

DESCRIPTION

drain

source

gate

LF, HF and DC amplifiers.

DESCRIPTION

handbook, halfpage 2

General purpose N-channel symmetrical junction

field-effect transistors in a plastic TO-92 variant package.

MAM257

CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.

Fig.1

Simplified outline (TO-92 variant)

and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

drain-source voltage

30

VGSoff

gate-source cut-off voltage

ID = 10 nA; VDS = 15 V

0.25

VGSO

gate-source voltage

open drain

30

IDSS

drain current

VDS = 15 V; VGS = 0

BF245A

6.5

mA

BF245B

15

mA

12

25

mA

Ptot

total power dissipation

Tamb = 75 C

300

mW

yfs

forward transfer admittance

VDS = 15 V; VGS = 0;
f = 1 kHz; Tamb = 25 C

6.5

mS

Crs

reverse transfer capacitance

VDS = 20 V; VGS = 1 V;
f = 1 MHz; Tamb = 25 C

1.1

pF

BF245C

1996 Jul 30

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

BF245A; BF245B; BF245C

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL

PARAMETER

VDS

drain-source voltage

VGDO

gate-drain voltage

VGSO

gate-source voltage

ID

drain current

IG

gate current

Ptot

total power dissipation

Tstg

storage temperature

Tj

operating junction temperature

CONDITIONS

MIN.

MAX.

UNIT

30

open source

30

open drain

30

25

mA

10

mA

up to Tamb = 75 C;

300

mW

up to Tamb = 90 C; note 1

300

mW

65

+150

150

Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm 10 mm.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a

PARAMETER

CONDITIONS

thermal resistance from junction to ambient

VALUE

UNIT

250

K/W

200

K/W

in free air

thermal resistance from junction to ambient

STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage

IG = 1 A; VDS = 0

30

VGSoff

gate-source cut-off voltage

ID = 10 nA; VDS = 15 V

0.25

8.0

VGS

gate-source voltage

ID = 200 A; VDS = 15 V

IDSS

IGSS

BF245A

0.4

2.2

BF245B

1.6

3.8

BF245C

3.2

7.5

BF245A

6.5

mA

BF245B

15

mA

BF245C

12

25

mA

VGS = 20 V; VDS = 0

nA

VGS = 20 V; VDS = 0; Tj = 125 C

0.5

drain current

gate cut-off current

VDS = 15 V; VGS = 0; note 1

Note
1. Measured under pulse conditions: tp = 300 s; 0.02.

1996 Jul 30

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

BF245A; BF245B; BF245C

DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; unless otherwise specified.
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX.

UNIT

Cis

input capacitance

VDS = 20 V; VGS = 1 V; f = 1 MHz

pF

Crs

reverse transfer capacitance

VDS = 20 V; VGS = 1 V; f = 1 MHz

1.1

pF

Cos

output capacitance

VDS = 20 V; VGS = 1 V; f = 1 MHz

1.6

pF

gis

input conductance

VDS = 15 V; VGS = 0; f = 200 MHz

250

gos

output conductance

VDS = 15 V; VGS = 0; f = 200 MHz

40

yfs

forward transfer admittance

VDS = 15 V; VGS = 0; f = 1 kHz

6.5

mS

VDS = 15 V; VGS = 0; f = 200 MHz

mS

yrs

reverse transfer admittance

VDS = 15 V; VGS = 0; f = 200 MHz

1.4

mS

yos

output admittance

VDS = 15 V; VGS = 0; f = 1 kHz

25

fgfs

cut-off frequency

VDS = 15 V; VGS = 0; gfs = 0.7 of its

value at 1 kHz

700

MHz

noise figure

VDS = 15 V; VGS = 0; f = 100 MHz;

RG = 1 k (common source);
input tuned to minimum noise

1.5

dB

MGE785

10

MGE789

handbook, halfpage

handbook, halfpage

ID

IGSS

(mA)
5

(nA)
1

4
typ

101

2
102

1
103

50

100

Tj (C)

0
4

150

VDS = 0; VGS = 20 V.

Fig.2

1996 Jul 30

VGS (V)

VDS = 15 V; Tj = 25 C.

Gate leakage current as a function of

junction temperature; typical values.

Fig.3

Transfer characteristics for BF245A;

typical values.

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

MBH555

6
ID
(mA)
5

BF245A; BF245B; BF245C

MGE787

15

handbook, halfpage

handbook, halfpage

ID
(mA)
VGS = 0 V

10

3
0.5 V
2

1 V

1.5 V
0

10

0
4

20

VDS (V)

VDS = 15 V; Tj = 25 C.

Fig.4

VGS (V)

VDS = 15 V; Tj = 25 C.

Output characteristics for BF245A;

typical values.

Fig.5

MBH553

15

Transfer characteristics for BF245B;

typical values.

MGE788

30

handbook, halfpage

handbook, halfpage

ID
(mA)

ID
(mA)
VGS = 0 V

10

20

0.5 V
1 V
10

5
1.5 V
2 V
2.5 V
0

10

VDS (V)

0
10

20

VDS = 15 V; Tj = 25 C.

Fig.6

1996 Jul 30

VGS (V)

VDS = 15 V; Tj = 25 C.

Output characteristics for BF245B;

typical values.

Fig.7

Transfer characteristics for BF245C;

typical values.

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

BF245A; BF245B; BF245C

MBH554

30

MGE775

handbook, halfpage

handbook, halfpage

ID
(mA)

ID
(mA)

3
VGS = 0 V

20
VGS = 0 V
2

0.5 V

1 V

1 V
10

2 V
3 V

1.5 V

4 V
0

10

20

VDS (V)

VDS = 15 V; Tj = 25 C.

Fig.8

50

100

Tj (C)

150

VDS = 15 V.

Output characteristics for BF245C;

typical values.

Fig.9

MGE776

Drain current as a function of junction

temperature; typical values for BF245A.

MGE779

20

15

handbook, halfpage

handbook, halfpage

ID

ID
(mA)

(mA)
16

10

VGS = 0 V

12
VGS = 0 V
8

2 V

5
1 V
4

2 V

4 V
0

0
0

50

100

Tj (C)

150

50

100

Tj (C)

150

VDS = 15 V.

VDS = 15 V.

Fig.10 Drain current as a function of junction

temperature; typical values for BF245B.

Fig.11 Drain current as a function of junction

temperature; typical values for BF245C.

1996 Jul 30

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

MGE778

103
handbook, halfpage
gis
(A/V)

102

102

MGE780

104
handbook, halfpage

bis
(mA/V)

gis

BF245A; BF245B; BF245C

10
Crs
(pF)

brs
(A/V)

10

103

102

101
103

10

Crs
1

bis

brs
10

1
10

102

f (MHz)

10

101

102

f (MHz)

102
103

VDS = 15 V; VGS = 0; Tamb = 25 C.

VDS = 15 V; VGS = 0; Tamb = 25 C.

Fig.13 Common source reverse admittance as a

function of frequency; typical values.

Fig.12 Input admittance; typical values.

MGE782

10

bfs

(mA/V)

MGE783

103
handbook, halfpage

handbook,
gfs, halfpage

10

gos
(A/V)

bos

102

bos
(mA/V)
1

6
gfs

gos

4
101

10
2

bfs

0
10

102

f (MHz)

103

10

VDS = 15 V; VGS = 0; Tamb = 25 C.

f (MHz)

102
103

VDS = 15 V; VGS = 0; Tamb = 25 C.

Fig.14 Common-source forward transfer admittance

as a function of frequency; typical values.

1996 Jul 30

102

Fig.15 Common-source output admittance as a

function of frequency; typical values.

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

BF245A; BF245B; BF245C

MGE781

MGE777

1.5

handbook, halfpage

handbook, halfpage

Cis
(pF)

Crs
(pF)

4
typ

typ
1

0
0

0.5

8
10
VGS (V)

VDS = 20 V; f = 1 MHz; Tamb = 25 C.

8
10
VGS (V)

VDS = 20 V; f = 1 MHz; Tamb = 25 C.

Fig.16 Input capacitance as a function of

gate-source voltage; typical values.

Fig.17 Reverse transfer capacitance as a function

of gate-source voltage; typical values.

MGE791

MGE784

10

handbook, halfpage

handbook,
V halfpage

GSoff
at ID = 10 nA

|yfs|
(mA/V)

(V)

BF245C

BF245B

BF245A
6
4
4
2

BF245C

2
BF245B

10

20

15

BF245A
0

ID (mA)

20

30

IDSS at VGS = 0 (mA)

VDS = 15 V; f = 1 kHz; Tamb = 25 C.

VDS = 15 V; Tj = 25 C.

Fig.18 Forward transfer admittance as a function of

drain current; typical values.

1996 Jul 30

10

Fig.19 Gate-source cut-off voltage as a function of

drain current; typical values.

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

MGE790

103
handbook, halfpage

BF245A; BF245B; BF245C

MGE786

handbook, halfpage

RDSon

F
(dB)

(k)
102

2
typ

10

BF245A

BF245B
BF245C

101
0

10

102

VGS (V)

VDS = 0; f = 1 kHz; Tamb = 25 C.

103

VDS = 15 V; VGS = 0; RG = 1 k; Tamb = 25 C.

Input tuned to minimum noise.

Fig.20 Drain-source on-state resistance as a

function of gate-source voltage;
typical values.

1996 Jul 30

f (MHz)

Fig.21 Noise figure as a function of frequency;

typical values.

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

BF245A; BF245B; BF245C

PACKAGE OUTLINE

handbook, full pagewidth

0.40
min

4.2 max
1.7
1.4

5.2 max

12.7 min
0.48
0.40

1
4.8
max

2.54
3

0.66
0.56
2.5 max

Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.

Fig.22 TO-92 variant.

1996 Jul 30

10

(1)

MBC015 - 1

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

BF245A; BF245B; BF245C

DEFINITIONS
Data Sheet Status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jul 30

11