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    Analog & Digital Electronics: Course No: Ph-218 Lec-26: Metal Oxide Field Effect Transistors (Mosfets)

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    Udai Singh
    This document discusses the structure and operation of n-channel metal oxide semiconductor field-effect transistors (MOSFETs). It describes the four terminals of a MOSFET - gate, source, drain, and body. There are two types, n-channel and p-channel MOSFETs. The document explains how applying different voltages to the gate terminal allows the MOSFET to operate in different modes by inducing an n-type or p-type inversion layer channel between the source and drain. Graphs of drain current versus drain-source and gate-source voltages are provided to illustrate the transistor's linear and saturation operating regions. Additional slides supplement the key topics with diagrams of how the inversion layer forms in response to varying

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    Analog & Digital Electronics: Course No: Ph-218 Lec-26: Metal Oxide Field Effect Transistors (Mosfets)

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    Udai Singh
    37 views16 pages
    This document discusses the structure and operation of n-channel metal oxide semiconductor field-effect transistors (MOSFETs). It describes the four terminals of a MOSFET - gate, source, drain, and body. There are two types, n-channel and p-channel MOSFETs. The document explains how applying different voltages to the gate terminal allows the MOSFET to operate in different modes by inducing an n-type or p-type inversion layer channel between the source and drain. Graphs of drain current versus drain-source and gate-source voltages are provided to illustrate the transistor's linear and saturation operating regions. Additional slides supplement the key topics with diagrams of how the inversion layer forms in response to varying

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    Lec-27

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    This document discusses the structure and operation of n-channel metal oxide semiconductor field-effect transistors (MOSFETs). It describes the four terminals of a MOSFET - gate, source, drain, and body. There are two types, n-channel and p-channel MOSFETs. The document explains how applying different voltages to the gate terminal allows the MOSFET to operate in different modes by inducing an n-type or p-type inversion layer channel between the source and drain. Graphs of drain current versus drain-source and gate-source voltages are provided to illustrate the transistor's linear and saturation operating regions. Additional slides supplement the key topics with diagrams of how the inversion layer forms in response to varying

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    37 views16 pages

    Analog & Digital Electronics: Course No: Ph-218 Lec-26: Metal Oxide Field Effect Transistors (Mosfets)

    Uploaded by

    Udai Singh
    This document discusses the structure and operation of n-channel metal oxide semiconductor field-effect transistors (MOSFETs). It describes the four terminals of a MOSFET - gate, source, drain, and body. There are two types, n-channel and p-channel MOSFETs. The document explains how applying different voltages to the gate terminal allows the MOSFET to operate in different modes by inducing an n-type or p-type inversion layer channel between the source and drain. Graphs of drain current versus drain-source and gate-source voltages are provided to illustrate the transistor's linear and saturation operating regions. Additional slides supplement the key topics with diagrams of how the inversion layer forms in response to varying

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 16

    Analog & Digital Electronics

    Course No: PH-218


    Lec-26: Metal Oxide Field Effect Transistors
    (MOSFETs)

    Department of Physics,
    Indian Institute of Technology Guwahati, India

    Structure of MOSFET
    Metal-Oxide Semiconductor FieldEffect Transistor (MOSFET) is the
    primary component in high-density
    chips such as memories and
    microprocessors

    MOSFET is a four terminals FET:


    Gate, Source, Drain and body
    Types of MOSFET:
     n-Channel (NMOS)
     p-Channel (PMOS)
     The minimum value of L is
    referred as the feature size of
    the fabrication technology.
    n-Channel (NMOS)

    Operation of n channel MOSFET


    Body and source are tied to ground.
    When VDS= 0 and VGS=0, source-body
    and drain-body diode are off hence no
    current can flow & MOSFET is in cutoff.

    When VDS= 0 and 0 < VGS < Vt ,Vertical


    electric field established. Holes repelled
    and depletion region under gate oxide
    forms.

    When VDS= 0 and VGS > Vt, A n type


    inversion layer formed underneath the
    gate oxide when VGS reaches a critical
    value Vt, called threshold voltage. The
    channel connects source to drain and
    current flow between them.
    3

    Operation of n channel MOSFET


     When VGS > Vt and a small VDS is applied
    Current flows from D to S (Electrons flow from S to D) and IDS VDS
    Electric field in the oxide is highest at the source end of channel. Thus many electrons are injected near the source.
    Electric field in the oxide is lowest at the drain end of channel. Thus few electrons are induced near the drain.

     Increasing VGS above Vt increases the electron density in the channel, and in
    turn increases the conductivity between D & S, hence IDS increases.
     MOSFET behave like a voltage controlled resistor.

    Operation of n channel MOSFET


     Increase VDS

    Decrease VGD

    less electrons at the drain side of the channel

     When VDS VGS Vt then VGD Vt so no channel exists at the drain side. The
    channel pinches-off
     When channel pinches off, electrons still flows from S to D
     Electrons are diffused from the channel to the depletion region near D, where they
    are drifted by the lateral E-field to the D
     Further increase of VDS - no effect on the channel - current is saturated and the
    transistor is in Saturation Mode

    I-V Characteristics of n channel MOSFET


     MOS structure looks like a parallel plate capacitor and VGC is composed of two
    components: Vt to form the channel and (VGC-Vt) to accumulate negative charges in
    the channel.

    Qchannel = CV

    C=

    V
    v = n E = n DS
    L

    ox LW
    tox

    = Cox LW

    L
    L2
    t= =
    v nVDS

    VGS VDS
    V = VGC Vt = (
    Vt )
    2

    Charge is carried by electrons and


    Carrier velocity v is proportional to the
    lateral E-field between S and D.

    I-V Characteristics of n channel MOSFET


    In the Linear region, drain current depends on
    How much charge is in the channel
    How fast the charge is moving

    Qchannel
    I=
    t

    I=

    nCoxW
    L

    1 2
    [(VGS Vt )VDS VDS
    ]
    2

    For VGS > Vt and VDS Vdsat = VGS Vt : ID is independent of VDS

    In Saturation mode

    Depletion and Enhancement mode MOSFET


     A depletion-type MOSFET has a built-in channel by fabrication i.e. It is ON
    when no gate-source voltage is applied and need to apply a negative VGS to
    turn off device. Vt is negative for NMOS.
     MOSFET is said to be enhancement type if gate-source voltage is applied
    to turn on the transistor. Vt is positive for NMOS.

    Channel length Modulation

    The effective channel length L


    is reduced by L and hence IDS
    increases.
    9

    P-channel MOSFET (PMOS)

    10

    Complimentary MOSFET (CMOS)

    Complementary MOS or CMOS integrated-circuit technologies provide


    both NMOS and PMOS on a same IC
    11

    Supplement slide: How inversion layer forms?

    p-Si

    Reference: E.F. Schubert, Renesselaer Polytechic Institute 2003


    12

    Supplement slide: Accumulation (VG < 0)


    (2) When VG < 0 (Accumulation):
    Gate bias is ve so Ef at the gate goes up. Since M and S have much higher
    conductivity than O so voltage between Gate and channel mostly drops at oxide. An
    Electric field will be generated at oxide.

    Reference: E.F. Schubert, Renesselaer Polytechic Institute 2003

    13

    Supplement slide: Accumulation (VG < 0)

    Reference: E.F. Schubert, Renesselaer Polytechic Institute 2003


    14

    Supplement slide: Depletion (VG > 0)

    Reference: E.F. Schubert, Renesselaer Polytechic Institute 2003


    15

    Supplement slide: Inversion (VG >> 0)

    Reference: E.F. Schubert,


    Renesselaer Polytechic
    Institute 2003

    16

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