A

E910.
26
ADJUSTABLE, WIDE INPUT RANGE PFM CONTROLLER

PRODUCTION DATA - JAN 27, 2012
Features
General Description
The highly flexible, easy to use PFM controller is ideal

for use in wide input range switching regulator applications. An advanced PFM control scheme gives these device the benefit of PWM converter with high efficiency
at heavy loads, while using very low operating current
at light loads to maintain an excellent behaviour over
output load variation.
The switching circuit is suitable for topologies requiring
low side FET, such as boost, flyback, Sepic, etc. Depending on the utilized topology the controller is capable of
producing regulated positive or negative output voltage. Operating from 3V to 60V supply and temperature
from -40C to +125C the device is well suited for automotive systems. Requiring a minimum number of external components, these regulator is simple to use and
cost saving. Self-protection features include an over
temperature shutdown under fault conditions and an
undervoltage lookout.
Low cost
Up to 90% efficiency
40A standby current
180A typical circuit operating current
3V to 60V input supply range
1.5V to 24V or more adjustable output voltage
Up to 300kHz switching frequency
Improved current-limited PFM control scheme
High current driver for external MOSFET
Undervoltage lockout and thermal shutdown
Applications

Minimum Component DC-DC converter

14V, 28V or 42V automotive systems
Power conditioning for portable equipment
High efficiency on-card switching regulators
LCD bias
Positive to negative conversion
Ordering Information
Product ID
Temp. Range
Package
E910.26
-40C to +125C
SOIC8N
Battery = 3V...60V
C5
100F
C1
22F
L1
100H
D1
ES2D
VOUT = 5V
VIN
BUK9875-100A
- ON-Signal from CAN-Transceiver, K15D etc.

- Permanent-ON > connect to VSM
ON
MDRV
R4
C2
68F
M1
3.3
E910.26
ISEN
VSM
C3
4.7F
L2
100H
C4
100nF
VFB
AGND
R1
0.1
PGND
C6
68pF
R2
39k
R3
120k
ELMOS Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
ELMOS Semiconductor AG
Data Sheet
1/16
QM-No.: 25DS0020E.01
E910.26

1 Functional diagram
VREF
VFB
Voltage
Comp
PFM
Circuitry
MDRV
Power
Mosfet
Driver
Error
Proc
PGND
Under
Voltage
Lockout
ISEN
AGND
ON
Instr
Amp
ON /OFF
Logic
Leading
Edge
Blanking
VREF
Current
Comp
OVERTMP
VREF
BIAS
DELAYED ON
POR
ON/OFF
Bandgap
Bias
Overtemp
VSM
Reg
VIN
VSM
VSM
E910.26
Figure 1: Functional diagram
PGND
AGND
ISEN
VFB
E910.26
2 Pinout
MDRV
VSM
VIN
ON
Figure 2: Package pinout SOIC8N
Data Sheet
2/16
QM-No.: 25DS0020E.01
E910.26

Table 1: Pin Description
Pin
1
Name
PGND
Type 1)
Description
Driver power ground pin. Connect pin to the current sense resistor, the (-) terminal of the input capacitor and the (-) terminal of the output capacitor. Due to
high currents, and high frequency operation of the IC, a low impedance circuit
ground plane is highly recommended.
AGND
Analog ground pin. This pin provides a clean ground for the controller circuitry:
The output voltage sensing resistors should be connected to this ground pin.
This pin is connected to the IC substrate. Connect to the (-) terminal of the output capacitor.
ISEN
AI
Current sense input pin. Voltage generated across an external sense resistor is
fed into this pin. Filter extensive high frequency noise.
VFB
AI
Positive feedback pin. Connect to SMPS output via external resistor divider to
set output voltage and is referenced to 1.22V. For best stability, keep VFB lead as
short as possible and VFB stray capacitance as small as possible.
ON
HVI
Switch ON input. Tie this pin to ground to force the IC into idle mode. A voltage
of VSM or higher switches the controller in operating mode. The rising edge resets the internal digital logic. Operating is guaranteed if VSM > 3.20V only.
VIN
Main supply input. Filter out high frequency noise with a 100nF ceramic capacitor placed close to the pin an PGND.
VSM
AO
Internal 5V regulator output. The driver and all control circuits are powered
from this voltage. Decouple this pin to PGND with a minimum of 4.7F tantalum and 100nF ceramic capacitors. All electrical specifications are valid, if VVSM
is settled.
MDRV
AO
Drive output. Drives the gate of the external MOSFET between PGND and VSM.
Connect the external MOSFET via a damping resistor to this pin.
1) D = Digital, A = Analog, S = Supply, HV = High voltage (see max. ratings), I = Input, O = Output
Data Sheet
3/16
QM-No.: 25DS0020E.01
E910.26

3 Absolute Maximum Ratings

Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress
ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this
document is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
All voltages referred to VGND. Currents flowing into terminals are positive, those drawn out of a terminal are negative.
Description
Condition
Symbol
Min
Max
Unit
Input Supply Voltage

for t < 500ms
for t < 500s
V VIN
-0.3
-0.3
-0.3
60
65
70
V
V
V
ON Input Voltage
VON
-0.3
40
Feedback Input Voltage
V VFB
-0.3
Sense Input Voltage
VISEN
-0.3
Internal Regulator
V VSM
-0.3
Driver Voltage
VMDRV
-0.3
5.5
IVSM
-40
mA
Peak Driver Output Source Current < 2s
ISCMDRV
-600
mA
Peak Driver Output Sink Current < 2s
ISKMDRV
800
mA
Difference Voltage AGND to PGND
VDIFF
-0.1
0.1
Continuous Power Dissipation @ TA = +70C

Derate 5.5mW/C above +70C
PTOT
480
mW
TA
-40
125
Junction Temperature Range
TJMAX
-40
150
Storage Temperature Range
TST
-40
150
Lead Temperature (Soldering, 10 sec)
TSOLD
300
Package Temperature (IR reflow, 10 sec) 1)
TIREF
235
Human Body Model
ESD
kV
Peak VSM Output Current
Operating Temperature Range
1) 60 second maximum above 183C
4 Electrostatic Discharge Sensitivity

This integrated circuit can be damaged by ESD. ELMOS Semiconductor AG recommends that all integrated circuits
must be handled with appropriate precautions. Failure to observe proper handling and installation procedures can
cause damage.
ESD damage can range from subtle performance degradation to complete device failure.
Data Sheet
4/16
QM-No.: 25DS0020E.01
E910.26

5 Electrical Characteristics
(V VIN = 3V to 60V, TA = -40C to +125C, unless otherwise noted. Typical values are at V VIN = 12.0V, TA=+25C and
V VSM > 4V. Positive currents flow into the device pins.)
Description
Condition
Symbol
Min
Typ
Max
Unit
Feedback Voltage
V VIN = 3.2V to 60V
V VFB
1.18
1.22
1.26
Feedback Current
V VFB = 1.22V
IVFB
-200
200
nA
Circuit of Figure 7,
V VIN = 3.2V to
60V, VIOUT = 50mA to
200mA
VOUT
4.80
5.00
5.20
Current Sense Threshold 1, E910.26
VIN = 3.2V to 60V
VISEN1
75
100
130
mV
Current Sense Input Current
VISEN = 0V to 0.2V
IISEN
-200
200
nA
Output Voltage
1)
Current Sense Input Voltage Range
V VIN = 3.2V to 60V
VISENR
0.3
ON Input High Voltage 4)
V VIN = 3.2V to 60V
VONH
0.75 x VSM
40
ON Input Low Voltage
4)
V VIN = 3.2V to 60V
VONL
0.75
ON Input Sink Current
4)
VON = 0.5V to 40V
ION
Minimum MDRV High Time
V VIN = 3.2V to 60V
THMIN
300
500
900
ns
Maximum MDRV High Time
V VIN = 3.2V to 60V
THMAX1
12
17
22
Minimum MDRV Low Time
V VIN = 3.2V to 60V
TLMIN
1.6
2.3
3.25
MDRV Rise Time
V VIN = 12V, C = 1nF

from MDRV to
PGND, VMDRV from
20% to 80%
TR, MDRV
20
40
ns
MDRV Fall Time
V VIN = 12V, C = 1nF

from MDRV to
PGND, VMDRV from
20% to 80%
TF, MDRV
15
30
ns
Driver High Voltage
V VIN = 5.5V to 60V,

IMDRV = -1.5mA
V VIN = 3.2V to 5.5V,
IMDRV = -1.5mA
VH, MDRV
4.40
VSM
VSM-0.4
VSM
Driver Low Voltage
V VIN = 5.5V to 60V,

IMDRV = 1.5mA
V VIN = 3.2V to 5.5V,
IMDRV = 1.5mA
VL, MDRV
0.01
0.02
0.02
0.04
Internal Supply Voltage

Internal Supply Voltage
VIN = 5.5V to 60V,

IVSM = 0A
VIN = 2.8V to 5.5V,
IVSM = 0A
V VSM
4.50
5.40
VIN-0.3
VIN
VIN+0.3
Internal Supply Output Current
V VIN = 24V, Duty <

0.05
IVSM
15
mA
Input Voltage Range 2)
Circuit of Figure 7
V VIN
3.0
60
Circuit of Figure 7
VULO
2.75
3.0
3.15
V VIN = 3V to 60V
IVINSTB
20
40
80
Under Voltage Lookout
2), 3)
Standby Current
1)
1) Guaranteed by design, not 100% tested in production

2) For information only
3) Referred to V VSM
4) In Accordance with Specification if V VSM > 3.20V only
Data Sheet
5/16
QM-No.: 25DS0020E.01
E910.26

6 Typical Performance Characteristics

STANDBY CURRENT VS. TEMPERATURE
CURRENT SENSE THRESHOLD VS. TEMPERATURE

250
70
VISEN2
VIN = 42V
60
200
DYNAMIC VISEN (mV)
IVINSTB (A)
VIN = 36V
VIN = 24V
50
VIN = 12V
40
150
VISEN1
100
30
VIN = 12V
20
-40
-20
20
40
60
80
100
120
50
-40
140
-20
TEMPERATURE (C)
20
40
60
80
100
120
140
TEMPERATURE (C)
INTERNAL SUPPLY VOLTAGE VS. TEMPERATURE
MAXIMUM MDRV HIGH TIME VS. TEMPERATURE
5.2
20
VIN = 12V
VIN = 12V
E910.26
19
5.1
THMAX (s)
VVSM (V)
18
5.0
17
16
4.9
15
4.8
-40
-20
20
40
60
80
100
120
14
-40
140
-20
TEMPERATURE (C)
60
80
100
120
140
MINIMUM MDRV LOW TIME VS. TEMPERATUR E

3.0
VIN = 12V
VIN = 12V
2.8
1.23
TLMIN (s)
FEEDBACK VOLTAGE (V)
40
TEMPERATURE (C)
FEEDBACK VOLTAGE VS. TEMPERATURE

1.24
1.22
1.21
1.20
-40
20
2.6
2.4
2.2
-20
20
40
60
80
100
120
2.0
-40
140
-20
20
40
60
80
100
120
140
TEMPERATURE (C)
TEMPERATURE (C)
Data Sheet
6/16
QM-No.: 25DS0020E.01
E910.26

MINIMUM MDRV HIGH TIME VS. TEMPERATURE
MDRV RISE TIME VS. TEMPERATURE

100
800
VIN = 12V
90
C = 4.7nF
80
70
600
TRDRV (ns)
THMIN (ns)
700
VIN = 12V
500
C = 3.3nF
60
C =2.2nF
50
40
30
400
C = 1nF
20
300
-40
-20
20
40
60
80
100
120
10
-40
140
TEMPERATURE (C)
-20
20
40
60
80
100
120
140
TEMPERATURE (C)
MDRV FALL TIME VS. TEMPERATURE

60
VIN = 12V
C = 4.7nF
50
TFDRV (ns)
40
C = 3.3nF
30
C =2.2nF
20
C = 1nF
10
0
-40
-20
20
40
60
80
100
120
140
TEMPERATURE (C)
Data Sheet
7/16
QM-No.: 25DS0020E.01
E910.26

7 Detailed Description
7.1 Overview
The E910.26 IC is a HV-CMOS switch mode power-supply controller that provide adjustable output voltages. It is
suitable for use in topologies requiring an external low side MOSFET, such as Boost, Flyback, Sepic or Cuk. Moreover the E910.26 IC can be operated over a very wide input supply range from 3V to 60V with only 40A standby
current.
All the power conducting components of the circuit are external to the E910.26. So the IC can accommodate a large
variety of inputs, outputs, and loads.
Their sophisticated control scheme combines the advantages of pulse-skipping pulse-frequency modulation (low
supply current) and current-mode pulse-width modulation (high efficiency with heavy loads), providing high efficiency over a wide input voltage and output current range, as well as increased output current capability over previous PFM controllers. It allows the device to achieve high efficiency over a wide range of loads, while the currentsense function and high operating frequency make it possible for the use of tiny external components. The external
sense resistor and power transistor permits the user to tailor the output current capability for each application.
7.2 Internal Low Drop Regulator

The E910.26 use an internal 5V low-drop regulator for logic and driver power in the IC. This supply is provided at pin
VSM for bypassing and compensation with an external parallel combination of 4.7F and 100nF capacitors to AGND.
Connect these capacitors very close to the controller. After VVSM is settled the controller work within specification.
A voltage of lower than 3V at pin VSM take the controller in under-voltage-lockout state. The normal operating stops
and the MDRV pin shunts the external gate of the MOSFET to PGND. To avoid a floating power MOSFET gate at very
low VSM voltages an integrated 100kOhm resistor shunts MDRV to PGND.
7.3 Controller Operation

The external power MOSFET is turned on when the voltage comparator at pin VFB senses that the output of the
supply is out of regulation. Switch off time is accomplished through the combination of a peak current limit and
an internal pair of monostable multivibrators that set the maximum switch on time (typically 17s) and minimum
switch off-time (typically 2.3s). Once off, the minimum off-time multivibrator holds the external MOSFET off
for 2.3s. After this minimum time, the MOSFET either stays off if the output is in regulation, or turns on again if
the output is out of regulation. To avoid a quasianalogue operation of the external MOSFET by means of to small
gate-pulses and destruction through overheating an internal circuit limits the minimum gate pulse width to typical 500ns.
The controller limit the peak switch current and therefore the inductor current, which permits them to run in continuous-conduction mode and maintain high efficiency with heavy loads.
When delivering high output currents, the controllers operate in continuous-conduction mode (CCM). In this
mode, current always flows in the inductor, and the control circuit adjust the switch duty cycle to maintain regulation without exceeding the switch current capability. This provides excellent load-transient response and high
efficiency. In discontinuous-conduction mode (DCM), current through the inductor starts at zero, rises to a peak
value, then ramps down to zero. Although efficiency is still excellent, the output ripple increases slightly, and the
Data Sheet
8/16
QM-No.: 25DS0020E.01
E910.26

switch waveform exhibit ringing (the self-resonant frequency of the inductor circuit). This ringing is to be expected
and poses no operational problems.
The E910.26 switching frequency is variable, depending on load current and input voltage, causing variable switching noise. However, the sub harmonic noise generated does not exceed the peak current limit times the output
filter capacitor equivalent series resistance (ESR).
7.4 Applications Information

Due to the high switching frequency up to 300kHz and the large magnetic flux swing use inductors with a low loss
ferrite core or equivalent materials. To minimize radiated noise use shielded coils. Coils with very low DC resistance
are preferable for highest efficiency. Make sure the inductors saturation current ratings exceed the circuits worst
case peak current by a minimum of 20% over the full temperature range. Never drive the cores into saturation. Under saturation conditions current flow is limited only by the inductors DC copper resistance and the source capacity. This is why saturation often results in destructive failures.
When selecting the external power MOSFET, an important parameter for the controller is the MOSFET total gate
charge. The switching frequency and the total gate charge determine the current to be supplied by the internal
VSM regulator. Depending on the value of input voltage, excessive chip power can trigger the over temperature
protection and turn off the controller. For maximum input voltage and ambient temperature a typical total gate
charge of less than 30nC is recommend. Use a series resistor for gate connection of the power MOSFET to avoid
HF oscillations due to the source and wiring inductance. Find a compromise between low EMI and high system efficiency.
As in any switching regulator, PCB layout is very important. Rapidly switching currents associated with wiring inductance can generate voltage transients, which can cause regulation and EMI problems. For minimal inductance
and ground loops, the heavy current wires should be wide printed circuits traces and should be kept as short as
possible. Begin the layout with the location of the power devices. Keep high current connections on one side of the
PCB if possible. If not, minimize the use of vias and keep current density in the vias to < 500mA/via. After achieving
a satisfactory power path layout, proceed with the control circuitry layout. For best results, external components
should be located as close to the controller as possible using ground plane construction or single point grounding.
Special care must be taken to the location and positioning of the feedback resistors and the associated wiring and
the placement of AGND and PGND connection. The VFB pin is very sensitive to pickup from the switching node.
Isolate this pin from capacitive coupling. Physically locate both feedback resistors near the controller, and route the
wiring away from the magnetic parts. Depending on the layout and output power a RC low-pass to the ISEN pin
can be necessary. Minimize the length of the gate lead connections.
Data Sheet
9/16
QM-No.: 25DS0020E.01
E910.26

8 Typical Application Examples

8.1 Step-Up Converter
VINP
C1
L1
D1
VOUT
VIN
C2
- ON-Signal from 3.5V ... 40V

ON
MDRV
R4
M1
E910.26
ISEN
VSM
C3
C4
R1
VFB
AGND
R2
PGND
R3
Figure 4: Step-Up Converter
Figure 4 shows the basic circuit for a step-up (boost) switching regulator. The output voltage must be greater or
equal than the input voltage. The circuit has low ripple current in the input circuit due to the presence of L1 and
high efficiency.
M1 is used to alternately apply the input voltage across inductor L1. During the time tON, M1 is switched on and
energy is supplied from the input voltage VINP and stored in L1. D1 is reverse biased and the output current is supplied from the charge stored in C2. When M1 opens tOFF , voltage at drain from M1 will rise positively to the point
where D1 turns on. The output current is now supplied through L1 and D1 to the load and any charge lost from C1
during tON is replenished.
The current through L1 can be CCM (Continuous Conduction Mode) or DCM (Discontinuous Conduction Mode) depending on the dimensions of the external components and value of the output current. For a large input to output
voltage difference a tapped inductor adjusts the duty cycle to a useful range.
The switch M1, diode D1, and output capacitor C2 must be specified to handle the peak currents as well as average
currents. For diode D1 a type with very low reverse recovery time is necessary. Use a low forward drop type like a
Schottky to improve the efficiency.
The converter is open load stable. With this basic circuit topology there is no output short circuit protection possible. The converter also shows a high inrush current due to the direct connection of C2 and the load via D1 and L1
to the input. In off mode, the load current and the current through the feedback divider R2, R3 add to the stand-by
current of the controller.
Data Sheet
10/16
QM-No.: 25DS0020E.01
E910.26

8.2 Flyback Converter

L1
+VOUT2
D3
C8
-VOUT2
VINP
+VOUT1
D2
C1
C5
VIN

ON
C2
R5
D1
MDRV
R4
M1
-VOUT3
D4
C7
E910.26
ISEN
VSM
C3
C4
R1
VFB
AGND
PGND
C6
R3
R2
Figure 5: Flyback Converter
In the triple output flyback regulator shown in figure 5, energy is stored in inductor L1 (with secondary windings)
during the on-time of transistor M1. When M1 is switched off, the voltage across L1 reverses as the inductor transfers the stored energy to the smoothing capacitors and to the loads. Due to the use of secondary windings positive,
negative and isolated output voltages are possible. All output voltages track very well. Note that the wound component is an inductor with secondary windings, combining the functions of both an inductor and a transformer.
An inductor is an energy storage device, and as such requires an air gap in the magnetic path.
The flyback converter is able to buck and boost the input voltage. The converter can be open and short stable. DCM
or CCM inductor currents depend of dimension of the whole circuit and the input voltage value and output loads.
Both input ripple current and output ripple current are high in a flyback regulator, but this disadvantage is more
than offset in many cases by the ability to achieve current or voltage gain and the inherent isolation afforded by
the transformer. The snubber network D1, C5 and R4 clamps the voltage peak created by leakage inductance of L1.
For diode D1 a fast type with very low reverse recovery time is necessary.
Data Sheet
11/16
QM-No.: 25DS0020E.01
E910.26

8.3 Cuk Converter

VINP
C5
L1
C1
L2
-VOUT
VIN
D1

ON
MDRV
R4
C2
M1
E910.26
ISEN
VSM
C3
C4
R1
VFB
AGND
PGND
R2
R3
Figure 6: Cuk Converter
The basic Cuk regulator (named after Slobodan Cuk, a professor at Cal Tech) in figure 6 is derived from the boost
and buck regulators, combing the characteristic low input current ripple of the boost regulator with the low output current ripple of the buck regulator. The output voltage may be greater than, or less than, the input voltage
and the output polarity is opposite the input voltage polarity. This results in an inverting buck-boost topology.
This converter operates via capacitive energy transfer. During the on time of M1, inductor current IL1 builds up. Simultaneously, capacitor C1 discharges round the loop C1, M1, C2 in parallel with the load, L2 and charging C2 in
the opposite polarity to the input voltage. When M1 is switched off, inductor current IL1 flows through C1 and the
diode D1, recharging C1. Simultaneously, inductor L2 maintains current round the loop L2, diode D1, C2 in parallel
with the output load.
This circuit has very low output current ripple due to the presence of L2 in the output circuit, similar to the buck
regulator. It also has very low ripple current in the input circuit due to the presence of L1, similar to the boost regulator. Coupling the input and output inductors on a single core can achieve a more efficient and compact design
for the same power throughput. In addition, the input and output ripple currents are considerably reduced. The
switch M1 must handle the sum of input and output current. A disadvantage of the Cuk regulator is that the series
capacitor C1 is the main energy storage / transfer component, instead of an inductor as in most other circuits. This
capacitor, therefore, has to be relatively large, and capable of handling high r.m.s. currents, so a low ESR is essential.
The bipolar current mirror converts with resistors R2 and R3 the negative output voltage to a positive one required
for feedback input of the E910.25. The Cuk converter and its associated applications are protected by a series of
patents, and its use in commercial designs may require a license agreement by its inventor.
Data Sheet
12/16
QM-No.: 25DS0020E.01
E910.26

8.4 Sepic Converter

Battery = 3V...60V
C5
100F
C1
22F
L1
100H
D1
ES2D
VOUT = 5V
VIN
BUK9875-100A

ON
MDRV
R4
C2
68F
M1
3.3
E910.26
ISEN
VSM
C3
4.7F
L2
100H
C4
100nF
VFB
AGND
R1
0.1
PGND
C6
68pF
R2
39k
R3
120k
Figure 7: Evaluation Board (3V-60V to 5V/200mA) Sepic Converter
The single-ended primary inductance converter was developed at AT&T Bell laboratories in the mid 1970s. The
intent of the developers was to create a new topology with properties not available in contemporary topologies.
Figure 7 shows a typical high efficiency Sepic converter circuit. An important feature is the ability to buck or boost
the input voltage with good transient response and without inverting voltage polarity. The regulator can handle
large signal input-tooutput voltage ratio with high efficiency. The converter has low ripple current in the input circuit due to the presence of L1; therefore reducing EMI at the input.
This circuit has three dynamic energy storage elements, L1, L2 and C1. L1 and L2 may be integrated into a single
magnetic structure with only one magnetic path. This coupled inductor version has several advantages. The leakage inductance of the coupled inductor can be arranged to effect near zero current ripple on the input with finite
value of L. Because the turns ratio between the windings is 1:1, there cannot be two different values for L1 and
L2. Because they are wound on a common core, both windings are either conducting or not depending on whether
there is energy in the core or not.
A disadvantage of the Sepic regulator (like the Cuk converter) is that the series capacitor C1 is the main energy storage / transfer component, instead of an inductor as in most other circuits. This capacitor, therefore, has to be relatively large, and capable of handling high r.m.s. currents, so a low ESR is essential. The switch M1 must handle the
sum of input and output current. Switching diode D1 must have a very low reverse recovery time and soft recovery
behaviour for low loss and EMI. Also a short turnon time to clamp the voltage spike at drain of M1 is important. If
possible, use a Schottky rectifier. The regulator operates either CCM or DCM depending on the dimension, input
voltage and load. Output load is protected in case of switch or diode fault.
Data Sheet
13/16
QM-No.: 25DS0020E.01
E910.26

VINP
C4
L11
D1
VOUT = 5V
VIN
C1
R6

ON
MDRV
R4
C9
C2
C3
M1
E910.26
C6
ISEN
VSM
L12
R5
C5
C8
R1
VFB
AGND
PGND
C7
R3
R2
Figure 8: Medium Power Sepic Converter
Figure 8 shows an economic example of an 15W output SEPIC converter for automotive applications. With the
components in the parts list shown there is an input voltage range from 5V to 25V and an output voltage value of
10V with maximum of 1.5A current. The whole circuit works within specification from 40C to +105C ambient
temperature.
Reference
Designator
Description
Manufacturer Manufacturers or
ELMOS Part Number
R1
RESISTOR, 15m, 1%, 1W, Power Metal Film, SMD, 2512 VITROHM
Type RL2512 (1)
R2
RESISTOR, 12k1, 1%, Metal Film, SMD, 0603
BEYSCHLAG
Type MCT 0603
R3
RESISTOR, 88k7, 1%, Metal Film, SMD, 0603
BEYSCHLAG
Type MCT 0603
R4
RESISTOR, 10, 5%, Metal Film, SMD, 0805
BEYSCHLAG
R5
RESISTOR, 470, 5%, Metal Film, SMD, 0805
BEYSCHLAG
R6
RESISTOR, 220, 5%, 0.5W, Metal Film, SMD, 2010
VITROHM
Type 508-0
C1
CAP-FXD, 470F, 25V, 1.43A, 38m, 105C, AL-ELCTLT,

Z(-40C)/Z(+20C)3
RUBYCON
ZL Series, 470F/25V, 10x16
C2

Z(-40C)/Z(+20C)3
RUBYCON
C3

Z(-40C)/Z(+20C)3
RUBYCON
C4

Z(-40C)/Z(+20C)3
RUBYCON
C5
CAP-FXD, 1.0nF, 16V, X7R, 105C, CER, SMD
KEMET
C6
CAP-FXD, 3.3nF, 50V, X7R, 105C, CER, SMD
KEMET
C7
CAP-FXD, 100pF, 16V, NPO, 105C, CER, SMD
KEMET
C8
CAP-FXD, 100nF, 16V, X7R, 105C, CER, SMD
KEMET
C9
CAP-FXD, 4.7F, 6V, 105C, TA, SMD
EPCOS
T491 Series
L1
TRANSFORMER, EVD15, SMD
VOGT / ELMOS
PI-EVD-1501 V1.0
D1
DUAL DIODE-PWR, SCHOTTKY, 12A, 100V, TO-252AA
IRF
12CWQ10FN
M1
Transistor MOSFET, N-CH, LOGIC-LEVEL, 25m, 60V,

TO-252
VISHAY
SUD40N06-25L
Omitted with good layout
Data Sheet
14/16
QM-No.: 25DS0020E.01
E910.26

92
90
E ffic ie n y ( % )
88
86
84
V output = 10V
I output = 1.5A
82
80
6
10
12
14
16
18
V input (V)
Figure 9: Efficiency of the Medium Power Sepic Converter @ TA = 25C
9 Package Reference
The E910.26 is available in a Pb free, RoHS compliant, SOIC8N plastic package. For dimension details refer to JEDEC
MS-012-F.
The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020C.
It has been qualified according to IEC 86 part 2-20 for the following soldering profile:
1. (2005) C, dwell time (505) s
2. (2605) C, dwell time <10 s
Data Sheet
15/16
QM-No.: 25DS0020E.01
E910.26

WARNING Life Support Applications Policy

ELMOS Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
vulnerability to physical stress. It is the responsibility of the buyer, when utilizing ELMOS Semiconductor AG
products, to observe standards of safety, and to avoid situations in which malfunction or failure of an ELMOS
Semiconductor AG Product could cause loss of human life, body injury or damage to property. In the development of your design, please ensure that ELMOS Semiconductor AG products are used within specified operating
ranges as set forth in the most recent product specifications.
General Disclaimer
Information furnished by ELMOS Semiconductor AG is believed to be accurate and reliable. However, no responsibility is assumed by ELMOS Semiconductor AG for its use, nor for any infringements of patents or other rights
of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of ELMOS Semiconductor AG. ELMOS Semiconductor AG reserves the right to make changes
to this document or the products contained therein without prior notice, to improve performance, reliability, or
manufacturability.
Application Disclaimer
Circuit diagrams may contain components not manufactured by ELMOS Semiconductor AG, which are included as means of illustrating typical applications. Consequently, complete information sufficient for construction
purposes is not necessarily given. The information in the application examples has been carefully checked and is
believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent
rights of ELMOS Semiconductor AG or others.
Contact Information
Headquarters
Heinrich-Hertz-Str. 1 D-44227 Dortmund (Germany)
: +492317549100
Regional Sales and Application Support Office Munich

Am Geflgelhof 12 D-85716 Unterschleiheim/Eching (Germany)

: sales@elmos.com
: www.elmos.com
: +49893183700
Sales and Application Support Office North America

ELMOS NA. Inc.
32255 Northwestern Highway, Suite 45 Farmington Hills, MI 48334 (USA)
: +12488653200
Sales and Application Support Office Korea and Japan

ELMOS Korea
Dongbu Root building, 16-2, Suite 509 Sunae-dong, Bundang-gu,
Seongnam-shi, Kyonggi-do (Korea)
: +82317141131
Sales and Application Support Office China

ELMOS Semiconductor Technology (Shanghai) Co., Ltd.
57-01E, Lampl Business Centre, 57F, The Exchange 1486 Nanjing W Rd.
(299 Tongren Rd) JingAn Shanghai P.R.China 200040
: +862161717358
Sales and Application Support Office Singapore

ELMOS Semiconductor Singapore Pte Ltd.
60 Alexandra Terrace #09-31 The Comtech Singapore 118502
: +6566351141
ELMOS Semiconductor AG, 2012. Reproduction, in part or whole, without the prior written consent of ELMOS Semiconductor AG, is prohibited.
Data Sheet
16/16
QM-No.: 25DS0020E.01
Mouser Electronics
Authorized Distributor
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ELMOS:
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E910.

ADJUSTABLE, WIDE INPUT RANGE PFM CONTROLLER

The highly flexible, easy to use PFM controller is ideal

Minimum Component DC-DC converter

- ON-Signal from CAN-Transceiver, K15D etc.

ADJUSTABLE, WIDE INPUT RANGE PFM CONTROLLER

Figure 2: Package pinout SOIC8N

ADJUSTABLE, WIDE INPUT RANGE PFM CONTROLLER

ADJUSTABLE, WIDE INPUT RANGE PFM CONTROLLER

3 Absolute Maximum Ratings

Input Supply Voltage

Feedback Input Voltage

Sense Input Voltage

Peak Driver Output Source Current < 2s

Peak Driver Output Sink Current < 2s

Difference Voltage AGND to PGND

Continuous Power Dissipation @ TA = +70C

Junction Temperature Range

Storage Temperature Range

Lead Temperature (Soldering, 10 sec)

Package Temperature (IR reflow, 10 sec) 1)

Human Body Model

Peak VSM Output Current

Operating Temperature Range

1) 60 second maximum above 183C

4 Electrostatic Discharge Sensitivity

ADJUSTABLE, WIDE INPUT RANGE PFM CONTROLLER

V VIN = 3.2V to 60V

Current Sense Threshold 1, E910.26

VIN = 3.2V to 60V

Current Sense Input Current

Current Sense Input Voltage Range

V VIN = 3.2V to 60V

ON Input High Voltage 4)

V VIN = 3.2V to 60V

ON Input Low Voltage

V VIN = 3.2V to 60V

ON Input Sink Current

VON = 0.5V to 40V

Minimum MDRV High Time

V VIN = 3.2V to 60V

Maximum MDRV High Time

V VIN = 3.2V to 60V

Minimum MDRV Low Time

V VIN = 3.2V to 60V

MDRV Rise Time

V VIN = 12V, C = 1nF

MDRV Fall Time

V VIN = 12V, C = 1nF

Driver High Voltage

V VIN = 5.5V to 60V,

Driver Low Voltage

V VIN = 5.5V to 60V,

Internal Supply Voltage

VIN = 5.5V to 60V,

Internal Supply Output Current

V VIN = 24V, Duty <

Input Voltage Range 2)