Irams 10 Up 60 A

PD-94640 RevI
Plug N DriveTM Integrated Power

Module for Appliance Motor Drive
IRAMS10UP60A
Series
10A, 600V
Description
International Rectifier's IRAMS10UP60A is an Integrated Power Module developed and optimized for electronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive
technology offers an extremely compact, high performance AC motor-driver in a single isolated package for
a very simple design.
A built-in temperature monitor and over-temperature/over-current protection, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation.
The integration of the bootstrap diodes for the high-side driver section, and the single polarity power
supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost
reduction advantages.
Features
Integrated Gate Drivers and Bootstrap Diodes.

Temperature Monitor
Temperature and Overcurrent shutdown
Fully Isolated Package.
Low VCE (on) Non Punch Through IGBT
Technology
Under-voltage lockout for all channels
Matched propagation delay for all channels
Low side IGBT emitter pins for current conrol
Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Recognized by UL (E252584), RoHS Compliant
Absolute Maximum Ratings

Parameter
VCES
Description
Maximum IGBT Blocking Voltage
Max. Value
600
V+
Positive Bus Input Voltage
450
IO @ TC= 25C
RMS Phase Current
10
IO @TC =100C
RMS Phase Current
Ipk
Maximum Peak Phase Current (tp<100ms)
15
Units
V
Fp
Maximum PWM Carrier Frequency
20
kHz
Pd
Maximum Power dissipation per Phase
20
Viso
Isolation Voltage (1min)
2000
VRMS
TJ (IGBT & Diodes)
Operating Junction temperature Range
-40 to +150
TJ (Driver IC)
T
Operating Junction temperature Range
-40 to +150
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Mounting torque Range (M3 screw)
0.8 to 1.0
C
Nm
IRAMS10UP60A
Internal Electrical Schematic - IRAMS10UP60A
V+ (10)
VRU (12)
VRV (13)
VRW (14)
Rg1
Rg3
Rg5
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
23 VS1
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
Rg2
LO1 16
Rg4
24 HO1
R3
LO2 15
25 VB1
1 VCC
HIN1 (15)
HIN2 (16)
HIN3 (17)
2 HIN1
LIN1 (18)
5 LIN1
Rg6
Driver IC
LO3 14
3 HIN2
4 HIN3
LIN2 LIN3 F ITRIP EN RCIN VSS COM
6
7
8
9
10
11
12 13
LIN2 (19)
R1
LIN3 (20)
T/ITRIP (21)
RT
VDD (22)
R2
THERMISTOR
C
VSS (23)
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IRAMS10UP60A
Inverter Section Electrical Characteristics @ TJ = 25C
Symbol
Parameter
Min
Typ
Max
Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V(BR)CES / T
Temperature Coeff. Of
Breakdown Voltage
---
0.57
---
V/C
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.7
2.0
---
2.0
2.4
ICES
Zero Gate Voltage Collector

Current-to-Emitter
---
15
---
10
40
Ilk_module
Zero Gate Phase-to-Phase

Current
--
--
50
VFM
Diode Forward Voltage Drop
---
1.8
2.35
---
1.3
1.7
A
A
V
VIN=0V, IC=20A
VIN=0V, IC=1.0mA
(25C - 150C)
IC=5A
TJ=25C, VDD=15V
IC=5A
TJ=150C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150C
VIN=5V, V+=600V
IC=5A
IC=5A, TJ=150C
Inverter Section Switching Characteristics

Symbol
Parameter
Min
Typ
Max
Eon
Turn-On Switching Loss
---
200
235
Eoff
Turn-Off Switching Loss
---
75
100
Etot
Total Switching Loss
---
275
335
Eon
Turn-on Swtiching Loss
---
300
360
Eoff
Turn-off Switching Loss
---
135
165
Etot
Total Switching Loss
---
435
525
Erec
Diode Reverse Recovery

energy
---
30
trr
Diode Reverse Recovery time
---
100
RBSOA
Reverse Bias Safe Operating

Area
SCSOA
Short Circuit Safe Operating

Area
Units Conditions
See CT1
---
TJ=25C
TJ=150C
Energy losses include "tail" and

diode reverse recovery
40
145
ns
TJ=150C, V+ =400V VDD=15V,

IF=5A, L=1mH
TJ=150C, IC=5A, VP=600V
V+=480V, VDD=+15V to 0V
See CT3
FULL SQUARE
10
IC=5A, V+=400V
VDD=15V, L=1mH
---
TJ=150C, VP=600V,
V+=360V,
VDD=+15V to 0V
See CT2
Thermal Resistance
Symbol
Parameter
Min
Typ
Max
Rth(J-C)
Junction to case thermal

resistance, each IGBT under
inverter operation.
---
4.2
4.7
C/W
Rth(J-C)
Junction to case thermal

resistance, each Diode under
inverter operation.
---
5.5
6.5
Flat, greased surface.

Heatsink compound thermal
C/W conductivity - 1W/mK
Rth(C-S)
Thermal Resistance case to

sink
---
0.1
---
C/W
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Units Conditions
IRAMS10UP60A
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substaines limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS (Note 1)
Symbol
VS1,2,3
Definition
High Side offset voltage
Min
-0.3
Max
600
Units
V
VB1,2,3
High Side floating supply voltage
-0.3
20
VDD
Low Side and logic fixed supply voltage
-0.3
20
VIN
Input voltage LIN, HIN, T/ITRIP
-0.3
TJ
Juction Temperature
-40
150
Recommended Operating Conditions Driver Function

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased
at 15V differential (Note 1). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor to
VDD
Sym bol
Definition
Min
Max
VB1,2,3
VS1,2,3
Units
High side floating supply voltage
VS+12
VS+20
High side floating supply offset voltage
Note 2
450
VDD
Low side and logic fixed supply voltage
12
20
VITRIP
T/ITRIP input voltage
VSS
VSS+5
VIN
Logic input voltage LIN, HIN
VSS
VSS+5
V
V
V
Static Electrical Characteristics Driver Function

VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. (Note 1)
Symbol
VIN,th+
Definition
Positive going input threshold
Min
3.0
Typ
---
Max
---
Units
V
VIN,th-
Negative going input threshold
---
---
0.8
VCCUV+
VBSUV+
VCC and VBS supply undervoltage

Positive going threshold
10.6
11.1
11.6
VCCUVVBSUV-

Negative going threshold
10.4
10.9
11.4
VCCUVH
VBSUVH

Ilockout hysteresis
---
0.2
---
IQBS
Quiescent VBS supply current
---
70
120
IQCC
Quiscent VCC supply current
---
1.6
2.3
mA
ILK
Offset Supply Leakage Current
---
---
50
IIN+
Input bias current (OUT=LO)
---
100
220
IIN+
Input bias current (OUT=HI)
---
200
300
A
A
A
V(ITRIP)
ITRIP threshold Voltage (OUT=HI or OUT=LO)
3.85
4.3
4.75
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IRAMS10UP60A
Dynamic Electrical Characteristics
VDD=VBS=VBIAS=15V, Io=1A, VD=9V, PWMIN=2kHz, VIN_ON=VIN_th+, VIN_OFF=VIN_thTA= 25C, unless otherwise specified
Symbol
Definition
Min
Typ
Max
Units
TON
Input to output propagation turn-on delay time (see fig.11)
470
ns
TOFF
Input to output propagation turn-off delay time (see fig. 11)
615
ns
DT
Dead Time
300
ns
I/TTrip
T/ITrip to six switch to turn-off propagation delay (see fig. 2)
750
ns
TFCLTRL
Post ITrip to six switch to turn-off clear time (see fig. 2)
ms
Internal NTC - Thermistor Characteristics

Parameter
Typ
Units
Resistance
100 +/- 5%
TC = 25C
R125
Resistance
2.522 + 17.3 % /- 14.9%
TC = 125C
B-Constant (25-50C)
4250 +/- 3%
-40 / 125
mW/C
R25
Temperature Range
Typ. Dissipation constant
Conditions
R2 = R1e [B(1/T2 - 1/T1)]

TC = 25C
Note 1: For more details, see IR21365 data sheet

Note 2: Logic operational for Vs from V--5V to V-+600V. Logic stata held for VS from V--5V to V--VBS. (Please refer to
DT97-3 for more details)
Thermistor Built-in IRAMS10UP60A

VCC (22)
NTC
T/ITRIP (21)
4.3k
12K
IR21365
VSS (23)
Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V.
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IRAMS10UP60A
Figure1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
Itrip
U,V,W
Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
V+
Ho
Hin1,2,3
(15,16,17)
(18,19,20)
HIN1,2,3
LIN1,2,3
U,V,W
0
0
0
1
0
1
1
X
1
0
1
X
Vbus
0
X
X
U,V,W
IC
Driver
Lin1,2,3
Itrip
(8,5,2)
Lo
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IRAMS10UP60A
Figure 2. T/ITrip Timing Waveform
HIN1,2,3
LIN1,2,3
50%
T/Itrip
U,V,W
50%
tfltclr
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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IRAMS10UP60A
Module Pin-Out Description
Pin
Name
VB3
W,VS3
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
na
none
VB2
High Side Floating Supply voltage 2
V,VS2
na
none
VB1
High Side Floating Supply voltage 1
U,VS1
na
10
V+
Positive Bus Input Voltage
11
na
none
12
LE1
Low Side Emitter Connection - Phase 1
13
LE2

none
14
LE3
15
HIN1
Logic Input High Side Gate Driver - Phase 1
16
HIN2
17
HIN3
18
LIN1
Logic Input Low Side Gate Driver - Phase 1
19
LIN2
20
LIN3
21
T/Itrip
22
VCC
+15V Main Supply
23
VSS
Negative Main Supply
Temperature Monitor and Shut-down Pin
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IRAMS10UP60A
Typical Application Connection IRAMS10UP60A
VB W
VSW
BOOT-STRAP
CAPACITORS
CURRENT SENSING CAN USE A

SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
V BV
3-ph AC
MOTOR
VSV
VB U
VSU
V+
DC BUS
CAPACITORS
LeU
PHASE LEG
CURRENT
SENSE
LeV
LeW
HINU
HINV
Driver IC
HINW
CONTROLLER
LINU
LINV
LINW
TEMP
SENSE
T/ITRIP
5k
3.3 V
1m
VDD(15 V)
6.8K
10.2k
10m
0.1
m
VSS
NTC
12k
O/C
SENSE
(ACTIVE LOW)
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance.
2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1F, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9.
4. Low inductance shunt resistors shuld be used for phase leg current sensing. Similarly, the length of the traces between pins 12, 13 and 14 to the corrisponding shunt resistors should be kept as small as possible.
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in inverter.
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Maximum RMS Output Current/Phase (A).
IRAMS10UP60A
10
9
Tc=100C
Tc=110C
Tc=120C
6
5
4
3
2
1
0
0
10
12
14
16
18
20
PWM Switching Frequency (kHz)

Figure 3. Maximum sinusoidal phase current as function of switching frequency
VBUS=400V, Tj=150C, Modulation Depth=0.8, PF=0.6
Maximum RMS Phase Current (A).
Switching Frequency:
6
12 kHz
16 kHz
20 kHz
5
4
3
2
1
0
1
10
100
Motor Current Modulation Frequency (Hz)

Figure 4. Maximum sinusoidal phase current as function of modulation frequency
VBUS=400V, Tj=150C, Tc=100C, Modulation Depth=0.8, PF=0.6
10
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IRAMS10UP60A
9
450
Current
Voltage
Current (A)
400
350
300
250
200
150
100
50
-1
0.0
Voltage (V)
-50
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Time (s)
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125C, VBUS=400V
450
400
350
Current
Voltage
300
250
200
150
100
50
-1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Voltage (V)
Current (A)
-50
1.0
Time (s)
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125C, VBUS=400V
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11
IRAMS10UP60A
Thermistor Resistance (k_ )
1000
Minimum
Nominal
100
Maximum
10
1
0
20
40
60
80
100
120
140
120
140
Temperature (C)
Figure 7. Variation of thermistor resistance with temperature
V sense (V) .
3
Maximum
Nominal
Minimum
0
0
20
40
60
80
Thermistor Temperature (C)
100
Figure 8. Variation of temperature sense voltage with thermistor temperature using external bias resistance of 4.3K, VCC=15V
12
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IRAMS10UP60A
IGBT Junction Temperature (C).
180
160
140
120
100
80
60
80
90
100
110
120
Thermistor Temperature (C)
130
140
150
Figure 9. Estimated maximum IGBT junction temperature with thermistor

temperature
20
17.5
Capacitance (F)
15
15
12.5
10
6.8
7.5
4.7
3.3
2.2
2.5
0
0
1.5
4.55
7.5
9 10 10.5
12
13.5 1515
16.5
18
19.5
20
Switching Frequency (kHz)
Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching

Frequency
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13
IRAMS10UP60A
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
HIN/LIN
90% IC
HIN/LIN
HIN/LIN
50%
HIN/LIN
10%
VCE
10% IC
10% IC
TON
TOFF
tr
Figure 11a. Input to Output propagation turn-on delay time
tf
Figure 11b. Input to Output

propagation turn-off delay timet
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery
14
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IRAMS10UP60A
Vbus
5V
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
Lin1,2,3
Figure CT1. Switching Loss Circuit

Vbus
1k
10k
VCC
Lin1,2,3
IN
Ho
Hin1,2,3
IC
Driver
5VZD
U,V,W
Io
VP=Peak Voltage on the IGBT die
Lo
IN
PWM=4s
Io
Figure CT2. S.C.SOA Circuit

Vbus
Ho
Hin1,2,3
1k
IN
10k
VCC
IC
Driver
5VZD
Lin1,2,3
IN
U,V,W
Lo
Io
Io
VP=Peak Voltage on the IGBT die
Figure CT3. R.B.SOA Circuit
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15
IRAMS10UP60A
Package Outline IRAMS10UP60A
missing pin : 3,6,9,11
note3
note5
note4
P 4DB00
IRAMS10UP60A
note2
note1: Unit Tolerance is +0.5mm,

Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
note5: P Character denotes Lead Free.
Dimensions in mm
For mounting instruction see AN-1049
16
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IRAMS10UP60A
Package Outline IRAMS10UP60A-2
note3
missing pin : 3,6,9,11
note5
note4
P 4DB00
IRAMS10UP60A-2
note2
note1: Unit Tolerance is +0.5mm,

Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
note4: Lot Code Marking.
note5: P Character denotes Lead Free.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
2012-12-19
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Irams 10 Up 60 A

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Irams 10 Up 60 A

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PD-94640 RevI

Plug N DriveTM Integrated Power

Integrated Gate Drivers and Bootstrap Diodes.

Absolute Maximum Ratings

Positive Bus Input Voltage

RMS Phase Current

RMS Phase Current

Maximum Peak Phase Current (tp<100ms)

Maximum PWM Carrier Frequency

Maximum Power dissipation per Phase

Isolation Voltage (1min)

TJ (IGBT & Diodes)

Operating Junction temperature Range

Operating Junction temperature Range

Mounting torque Range (M3 screw)

Zero Gate Voltage Collector

Zero Gate Phase-to-Phase

Diode Forward Voltage Drop

Inverter Section Switching Characteristics

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-on Swtiching Loss

Turn-off Switching Loss

Total Switching Loss

Diode Reverse Recovery

Diode Reverse Recovery time

Reverse Bias Safe Operating

Short Circuit Safe Operating

Energy losses include "tail" and

TJ=150C, V+ =400V VDD=15V,

Junction to case thermal

Junction to case thermal

Flat, greased surface.

Thermal Resistance case to

High Side floating supply voltage

Low Side and logic fixed supply voltage

Input voltage LIN, HIN, T/ITRIP

Recommended Operating Conditions Driver Function

High side floating supply voltage

High side floating supply offset voltage

Low side and logic fixed supply voltage

T/ITRIP input voltage

Logic input voltage LIN, HIN

Static Electrical Characteristics Driver Function

Negative going input threshold

VCC and VBS supply undervoltage

VCC and VBS supply undervoltage

VCC and VBS supply undervoltage

Quiescent VBS supply current

Quiscent VCC supply current

Offset Supply Leakage Current

Input bias current (OUT=LO)

Input bias current (OUT=HI)

ITRIP threshold Voltage (OUT=HI or OUT=LO)

Input to output propagation turn-on delay time (see fig.11)

Input to output propagation turn-off delay time (see fig. 11)

T/ITrip to six switch to turn-off propagation delay (see fig. 2)