Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE
.Iwagami,T.Nagahara Pre K.Kuriaki,T.Iwagami,T.Nagahara Apr Y.Nagashima 29-Jan-07 Rev

Transfer-Mold Type Insulated Type

D T.Nagahara,M.Sakai,Shang,T.Nakano T.Iwagami 4-Jul.-08

Applications : 0.2~5.5kW/AC400Vrms three-phase motor variable speed inverter drive. Integrated Power Functions :
1200V/35A low-loss CSTBT inverter bridge with N-side open emitter structure for DC-to-AC power conversion

Integrated drive, protection and system control functions :

-For P-side -For N-side -Fault signaling -Input interface : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection. : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC) : Corresponding to a SC fault (N-side IGBT), a UV fault (N-side supply) : 5V line, Schmitt Trigger receiver circuit (High Active).

Fig. 1 Package Outlines

Note: DIPIPM and CSTBT are registered trademarks of MITSUBISHI ELECTRIC CORPORATION in Japan.

DIPIPM

DPH-5546e-D
(1/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE
Maximum Ratings (Tj=25C, unless otherwise noted): Inverter Part: Item Symbol Condition Supply voltage VCC Applied between P-NU,NV,NW Supply voltage (surge) VCC(surge) Applied between P-NU,NV,NW Collector-emitter voltage VCES IC Each IGBT collector current Tc=25C ICP Each IGBT collector current (peak) Tc=25C, less than 1ms PC Collector dissipation Tc=25C, per 1 chip Junction temperature T Control (Protection) Part Item Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage Total System Item Self protection supply voltage limit (short circuit protection capability) Module case operation temperature Storage temperature Isolation voltage
Note 1: Tc measurement point D

Transfer-Mold Type Insulated Type

Rating 900 1000 1200 35 70 (129.9) -20~+150

Unit V V V A A W C

Symbol VD VDB VIN VFO IFO VSC

Condition Applied between VP1-VPC,VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS ,VWFB-VWFS Applied between UP,VP,WP-VPC, UN,VN,WN-VNC Applied between Fo-VNC Sink current at Fo terminal Applied between CIN-VNC

Rating 20 20 -0.5~VD+0.5 -0.5~VD+0.5 1 -0.5~VD+0.5

Unit V V V V mA V

Symbol VCC(PROT) Tc Tstg Viso

Condition VD=13.5~16.5V, Inverter part Tj=125C, non-repetitive less than 2s

Rating 800
(Note 1) -20~+100

Unit V C C Vrms

-40~+125 60Hz, Sinusoidal, AC 1 minute, connection pins to heat sink plate 2500

Tc point

DIPIPM

DPH-5546e-D
(2/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE
Thermal Resistance : Item Junction to case thermal resistance Transfer-Mold Type Insulated Type Min. Typ. Max. Unit (0.77) CW (1.25) (Note 2) Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100m~+200m
on the contacting surface of DIPIPM and heat sink.

Symbol Condition Rth(j-c)Q Inverter IGBT part (per 1/6 module) Rth(j-c)F Inverter FWDi part (per 1/6 module)

Electrical Characteristics (Tj=25C, unless otherwise noted ) : Inverter Part Item Symbol Condition Collector-emitter VCE(sat) VD=VDB=15V T=25C saturation voltage VIN=5V, IC=35A, T=125C FWDi forward voltage B VEC VIN=0V, -IC=35A Switching time A ton VCC=600V, VD=VDB=15V trr IC=35A, VIN=0-5V tc(on) T=125C toff Inductive load tc(off) Collector-emitter ICES T=25C VCEVCES cut-off current T=125C Control (Protection) Part : Item Symbol Condition Circuit current ID VD=VDB=15V Total of VP1-VPC,VN1-VNC VUFB-VUFS,VVFB-VVFS,VWFB-VWFS VIN=5V VD=VDB=15V Total of VP1-VPC,VN1-VNC VUFB-VUFS,VVFB-VVFS,VWFB-VWFS VIN=0V Fo output voltage VFOH Vsc=0V, Fo terminal pull-up to 5V by 10k VFOL Vsc=1V, IFO=1mA Input current IIN VIN=5V Short circuit trip level C ISC (Note 3) -20CTj125CVD=15V UVDBt Tj125C Trip level Control supply underUVDBr Reset level voltage protection UVDt Trip level UVDr Reset level Fault output pulse width tFO CFO=22nF (Note 4) ON threshold voltage A Vth(on) Applied between UP,VP,WP-VPC, OFF threshold voltage Vth(off) UN,VN,WN-VNC Temperature output C LVIC temperature = 85C (Note 5) VOT

Min. (0.8) -

Typ. (1.9) (2.0) (2.8) (1.5) (0.3) (0.6) (2.8) (0.7) -

Max. (2.6) (2.7) (3.3) (2.2) (0.9) (3.8) (1.0) 1 10

Unit V V

mA

Min. 4.9 0.7 (59.5) 10.0 10.5 10.3 10.8 (1.6) (0.8) (3.50)

Typ. 1.5 (2.4) (3.63)

Max. (3.70) (1.30) (3.50) (1.30) 1.10 2.0 ( - ) 12.0 12.5 12.5 13.0 (3.5) (3.76)

Unit

mA

V mA A V ms V V

(Note 3) Short circuit protection is functioning only for N-side IGBTs. About rating and external resistance Rs for detecting short circuit are under consideration. C (Note 4) Fault signal is output when short circuit or control supply under-voltage protective functions operate at N-side. -6 The fault output pulse-width tFO depends on the capacitance value of CFO (CFO= 9.3 10 tFO [F]) (Note 5) DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protect level that customer defined, controller (MCU) should stop the DIPIPM.

DIPIPM

DPH-5546e-D
(3/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE
Fig.2 Temperature of LVIC - VOT output characteristics C
5.0 4 .2 6V 4.5

Transfer-Mold Type Insulated Type

VOT output (V) V OTV

4.0

3 .6 3V

1 10 10

3.5 3 .00 V 3.0 6 01 0 2.5 40 50 60 70 80 90 10 0 11 0 1 20 130 LVIC Temperature of LVIC (C) 85 3

Mechanical Characteristics and Ratings: Item Condition Mounting screw: (M4) Recommended: 1.18Nm Mounting torque Weight (Note 6) Heat sink flatness
Note 6: Flatness measurement position D

Min. (0.98) (50)

Typ. (65)

Max. (1.47) (100)

Unit Nm g m

DIPIPM

DPH-5546e-D
(4/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE
Recommended Operation Conditions : Item Symbol Supply voltage Control supply voltage Control supply voltage Control supply variation
Arm-shoot-through blocking time D

Transfer-Mold Type Insulated Type

Condition Applied between P-NU,NV,NW Applied between VP1-VPC,VN1-VNC Applied between VUFB-VUFS,VVFB-VVFS,VWFB-VWFS

VCC VD VDB

Recommended Min. Typ. Max. 350 600 800 13.5 15.0 16.5 13.0 -1 (3.3) (-) (-) 15.0 18.5 +1 (15)
(12.8)

Unit V V V V/s s kHz Arms

PWM input frequency Allowable rms current

Minimum input pulse width D

VNC variation Junction temperature

VD,VDB tdead For each input signal, TC100C fPWM TC100C, Tj125C VCC=600V, VD=15V, fC=15kHz, P.F=0.8, Sinusoidal PWM, IO TC100C, Tj125C (Note 7) (Note 8) PWIN(on) 350VCC800V, IC35A 13.5VD16.5V, PWIN(off) 13.5VDB16.5V, -20TC100C, N line wiring inductance 35<IC59.5A less than 10nH (Note 9) Potential difference between VNC VNC-NU,NV,NW including surge voltage T

(-) -5.0 -20

+5.0 125 V C

(Note 7) The allowable output rms current also depends on user application conditions. (Note 8) DIPIPM might make no response to the input on signal with pulse width less than PWIN(on). (Note 9) IPM might make delayed response (less than about 2s) or no response for the input signal with off pulse width less than PWIN(off). Please refer Fig. 3 about delayed response. C

Fig.3 About Delayed Response Against Shorter Input Off Signal Than PWIN(off) (P side only)
P Side Control Input

Internal IGBT Gate

Output Current Ic

t2

t1

Real lineoff pulse width>PWIN(off); turn on time t1 Broken lineoff pulse width<PWIN(off); turn on time t2

DIPIPM

DPH-5546e-D
(5/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE Fig.4 DIPIPM Internal Circuit
VUFB VUFS VP1 UP
HVIC1 VCC IN COM VB HO VS IGBT1 Di1

Transfer-Mold Type Insulated Type

VVFB VVFS VP1 VP

HVIC2 VCC IN COM VB HO VS IGBT2 Di2

VWFB VWFS VP1 WP VPC

HVIC3 VCC IN COM LVIC UOUT VB HO VS IGBT4 IGBT3 Di3

Di4

VN1

VCC IGBT5 VOUT Di5

NU

NV UN VN WN Fo VOT VNC
UN VN WN Fo WOUT VNO CIN CFO IGBT6 Di6

NW

VOT
GND

CFO

CIN

Vsc

DIPIPM

DPH-5546e-D
(6/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE Fig.5 Timing Charts of the Protective Functions
[A] Short-Circuit Protection ( N-side only, with external resistor and RC filter ) a1. Normal operation: IGBT turn on and carry current. a2. Short circuit current detected (SC trigger). a3. All N-side IGBTs' gates are hard interrupted. a4. All N-side IGBTs turn OFF. a5. Fo output with a fixed pulse width (determined by the external capacitance CFO). a6. Input L: IGBT off. a7. Input H: IGBT on, but during the Fo output period the IGBT will not turn on. a8. IGBT turns ON when LH signal is input after Fo is reset.
N-side control input Protection circuit state Internal IGBT gate
a1 a2 SC a4 SET RESET a3 a8 a6 a7

Transfer-Mold Type Insulated Type

Output current Ic
SC reference voltage

Sense voltage of Fault output Fo

Rs
RC circuit time constant delay a5

[B] Under- Voltage Protection (N-side, UVD) b1. Control supply voltage V D rises: After VD level reaches under voltage reset level (UVDr), the circuits start to operate when next input is applied. b2. Normal operation: IGBT turn on and carry current. b3. VD level dips to under voltage trip level. (UVDt). b4. All N-side IGBTs turn OFF in spite of control input condition. b5. Fo is output for the period determined by the capacitance CFO but continuously during UV period. b6. VD level reaches UVDr. b7. Normal operation: IGBT turn on and carry current.
Control input Protection circuit state Control supply voltage VD
UVDr b1 UVDt b3 b4 b7 RESET SET RESET

b6

b2

Output current Ic

b5

Fault output Fo

DIPIPM

DPH-5546e-D
(7/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE
Transfer-Mold Type Insulated Type [C] Under- Voltage Protection (P-side, UVDB ) c1. Control supply voltage VDB rises : After VDB level reaches under voltage reset level (UVDBr), the circuits start to operate when next input is applied. c2. Normal operation: IGBT turn on and carry current. c3. VDB level dips to under voltage trip level (UVDBt). c4. P-side IGBT turns OFF in spite of control input signal level, but there is no Fo signal output. c5. VDB level reaches UVDBr. c6. Normal operation: IGBT turn on and carry current.
Control input Protection circuit state Control supply voltage VDB
UVDBr c1 UVDBt c3 c4 c5 RESET SET RESET

c2

c6

Output current Ic

High-level (no fault output)

Fault output Fo

Fig.6 An Instance of Interface Circuit

5V line

10k

DIPIPM UP,VP,WP,UN,VN,WN

MCU Fo VNC(Logic) 2.5k(min)

Note) RC coupling at each input (parts shown dotted) may change depending on the PWM control scheme used in the application and the wiring impedance of the applications printed circuit board. The DIPIPM input signal section integrates a 2.5k(min) pull-down resistor. Therefore, when using a external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement.

Fig.7 An Instance of Current Detecting Part

DIPIPM

It is recommended to make the inductance of X part under 10nH. For shunt resistors, it is recommended to use as low inductance type as possible.

X NU NV VNC NW
Shunt resistors

Connect the wiring from VNC terminal at the point as close to shunt resistors' terminal as possible. It is recommended to divide the wiring to current detecting circuit at the point as close to shunt resistor's terminal as possible.

To current detecting circuit

DIPIPM

DPH-5546e-D
(8/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE
Transfer-Mold Type Insulated Type
C

Fig.8 An Instance of SC Protection Circuit

LVIC IGBT4 Di4

VN1
IGBT5 Di5

NU

NV UN VN WN Fo VOT VNC CFO CIN Vsc

To current detecting circuit

IGBT6

Di6

NW

Rs

These points should be connected to GND at near the VNC terminal.

RC filter for noise cancelling Recommended time constant: 1.5-2.0s

DIPIPM

DPH-5546e-D
(9/10)

Application Note

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>

PS22A78-E
TENTATIVE
Transfer-Mold Type Insulated Type

Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but these are always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary circuits, (2) use of non-flammable material or (3) prevention against any malfunction or mishap.

Notice regarding these materials These materials are intended as reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customers application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-partys rights, originating in the use of any product data, diagrams, chart, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com) When using any or all of the information contained in these materials, including product data, diagrams, charts, programs and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.

DIPIPM

DPH-5546e-D
(10/10)