5rd NSF Abstract Carbon Nanotube
5rd NSF Abstract Carbon Nanotube
Mark Lundstrom
Network for Computational Nanotechnology and Purdue University
465 Northwestern Avenue
West Lafayette, IN 47907
Since the first reports of single wall carbon nanotubes (CNTs), they have been the subject of
intense interest for basic and applied research. When the first carbon nanotube field-effect
transistors (CNTFETs), were reported, it was not even clear how they functioned, but progress
has been rapid. CNTFET device physics is now rather well understood, and sophisticated
transistor structures with high-performance operation are now being reported. Although
manufacturing issues will ultimately play a decisive role in any future CNT electronic
technology, my focus in this talk is on the physics of CNT devices - specifically the CNTFET. It
is still too early to tell what role CNTFETs may play in electronic systems of the future, but they
provide us with a specific context in which to develop technology and understand transport,
contacts, interfaces, etc., which are likely to be important for CNT electronics in general.
The rapid progress in the performance of CNTFETs and in our ability to understand device
physics and to predict device performance is a good example of how theory and simulation can
complement experimental work in emerging fields of research. In this talk, Ill present my
perspective on what is understood and what questions remain. My own understanding has
developed during a close collaboration between my group at Purdue and Professor Hongjie Dais
group at Stanford University and also by following closely the work of other laboratories,
especially the group at IBM Research.
Carbon nanotube FETs with device metrics that
exceed those of silicon MOSFETs (e.g. device
delay at a specified on-off ratio) have now been
reported [1].
As shown in the figure, our
understanding of these devices has progressed to
the point where their general features can be
quantitatively explained. The simulation technique
that has proved most useful is the nonequilibrium
Greens Function formalism (NEGF) of quantum
transport [2] solved self-consistently with Poissons
equation. An implementation based on a pz orbital
description in circumferential mode space has
proven to be a useful device simulation tool [3].
Not only can I-V characteristics be simulated, the technique provides detailed insight into the
internal device physics. As shown by the figure below, the ballistic local density-of-states shows
quantum structure, multiple subbands, tunneling, and confined states in the valence band.
Recently, phonon scattering has been included [4] to examine the physics of sub-60 mV/decade
subthreshold swings as reported recently by Appenzeller, et al. [5].
Biography
MARK LUNDSTROM is the Don and Carol Scifres
Distinguished Professor of Electrical and Computer Engineering
at Purdue University where his teaching and research center on
the physics, technology, and simulation of electronic devices.
Lundstrom is the founding director of the NSF-funded Network
for Computational Nanotechnology, which has a mission to serve
the U.S. National Nanotechnology Initiative through online
services that support research, education, and collaboration. He
serves on the leadership councils of the NASA-funded Institute
for Nanoelectronics and Computing and the MARCO Focus
Center for Materials, Structures, and Devices. Lundstroms work
has been recognized most recently by the 2005 Semiconductor
Industry Association's University Researcher Award for his career
contributions to semiconductor device physics and simulation.
Introduction
Scaling down of electronic device sizes has been the fundamental strategy for improving
the performance of LSIs. The ITRS roadmap [1] suggests that in 2016 the gate length of
MOSFETs will be less than 10nm. In this nanoscaled regime, fundamental limits and
technological challenges are encountered. In addition, the quantum confinement effects and
parasitic resistance will have significant impacts on MOSFET performance in these small
FETs. In this work, we will introduce our experimental study on the quantum confinement
effects on ultrathin-body SOI MOSFETs as well as on the properties of nanoscaled Schottky
junction formed between inversion-layer and metal source/drain. The quantum confinement
effects in nanoscaled devices and metal source/drain will be important also in carbon
nanotube FETs.
Quantum Confinement Effects
By utilizing SOI MOSFETs with SOI thickness of less than 5nm, the quantum
confinement effects on MOSFET characteristics are investigated [2-5] and the following
results are demonstrated. 1) The threshold voltage of MOSFETs is increased as SOI thickness
decreases. 2) The slope of the Cgc-Vg curve around Vth becomes sharper as SOI thickness
decreases. 3) The mobility is strongly modulated due to subband structure modulation induced
by the quantum confinement effects. Although the mobility behavior as a function of SOI
thickness is a little complicated, it is basically understood in terms of quantum confinements
in ultrathin SOI.
Schottky source/drain
It should be noted that the Schottky junction formed between inversion-layer and
sourd/drain metal influences the ON current of FETs and that the junction will have strong
influence from the field induced by the gate. In order to investigate the gate field effect on
Schottky barrier, Schottky barrier height, B, around the gate edge of a gated Schottky diode is
thoroughly investigated [6]. Fig. 1 shows a schematic structure of our gated Schottky diode. A
nano-Schottky diode is formed between the metal (CoSi2) electrode and the accumulation
accumulation layer
A
VG
ID
VD
ID
CoSi2
n+
Iacc
Ib
n-well
accumulation
layer,
Iacc,
gate oxide was 10 nm. The channel length and width were
current
through
the
gated
extracted as Iacc=ID-Ib.
By investigating the nano-Schottky characteristics, it is demonstrated that the increase of
VG significantly lowers the Schottky barrier height. The B lowering can be quantitatively
explained in terms of the image-force-induced potential lowering. Based on the above results,
it is concluded that Schottky S/D MOSFETs with source metal of 0.2-eV B have the potential
to show the competitive performance with conventional MOSFETs.
Conclusions
In this work, the quantum confinement effects in ultrathin-body MOSFETs and the
properties of nanoscaled Schottky jnunction formed between inversion-layer and metal
source/drain are discussed. The effects and properties will be important also in CNTFETs.
References
Biography
Ken Uchida joined the Research and
Award
Japan in 2005.
of
single-electron
source/drain
devices,
MOSFETs,
Schottky
ultrathin-body
from
Ministry
of
Education,
understand the behavior of the contacts of the CNT-FETs. In this report, we have fabricated
CNT-FETs using various metals as contacts and studied the device characteristics in detail.
CNT FETs were fabricated using position-controlled CNT growth by thermal CVD on
patterned catalysts4 in order to specify the position of the CNT-FETs. The fabricated
CNT-FETs usually showed p-type conduction. As a novel device, various peapod FETs with
metallofullerenes inserted in the CNTs were fabricated. They showed ambipolar I-V
characteristics with both n- and p-type conduction behaviors depending on the gate voltage.5
The ambipolar characteristics are explained based on the Schottky-barrier-transistor
model,6 where the transistor action occurs primarily by changing the Schottky contact
resistance by the gate voltage rather than the channel resistance. It has been shown that the
bandgap of the peapod FETs is dependent on what kind of metallofullerene is inserted in the
CNT channel.7 This indicates the possibility of bandgap engineering of the CNTs by
encapsulating metallofullerenes.
Based on the Schottky-barrier-transistor model, we have realized n-channel CNT-FETs
without any doping in the CNT channel, employing Ca as a contact metal with a small work
function.8 The barrier height of the contact obtained by the temperature dependence of the
drain current suggests the formation of the polarization at the metal/CNT interface. We also
fabricated the CNT-FETs using various kinds of contact metals with different work functions
(Pd, Ti, Mg, and Ca). The threshold voltage was dependent on the work function of the
contact metals, which suggests that the Fermi level pinning is weak in the CNTs. The drain
current hysteresis was decreased by Si3N4 surface passivation.9
The effects of light illumination on the CNT FETs were studied using microphotocurrent
spectroscopy.10 Based on the excitation photocurrent spectra, the chirality of the CNT used in
the FET channel was assigned. It has also been shown that the CNT-FETs is suitable for the
photodetectors with a large dynamic range of 4 orders of magnitude.
Another important application of the CNT-FETs is the label-free biosensor. It is expected
to have a high sensitivity because of a large surface-to-volume ratio of the CNT channel. The
contact electrodes were covered with insulator to avoid the antigen-containing solution
touching the electrodes, which might result in a change of the work function of the contact
metal leading to the modulation of the drain current. The drain current decreased by
introducing the antigen-containing solution (anti-mouse IgG F(c) [Goat]) to the
antibody-immobilized CNT-FETs.11
We have shown experimental results on CNT-FETs with SWNT as a channel. While they
have a potential for computer electronics, it is likely that the initial applications of
CNT-FETs will be in less integrated systems such as biosensors and optoelectronic devices.
New functional devices based on their unique 1-D characteristics are also interesting.
1. C. Dekker: Phys. Today 52, 22 (1999).
2. M. S. Dresselhaus, G. Dresselhaus and Ph. Avouris: Carbon Nanotubes: Synthesis,
Structure, Properties, and Applications (Springer, Berlin, 2001) vol. 80.
3. P. Avouris, J. Appenzeller, R. Martel, and S. Wind: Proc. IEEE 91 (2003) 1772.
4. Y. Ohno, S. Iwatsuki, T. Hiraoka, T. Okazaki, S. Kishimoto, K. Maezawa, H. Shinohara and
T. Mizutani, Jpn. J. Appl. Phys. 42 (2003) 4116.
5. T. Shimada, T. Okazaki, R. Taniguchi, T. Sugai, H. Shinohara, Y. Ohno, S. Mizuno, S.
Kishimoto and T. Mizutani, Appl. Phys. Lett. 81 (2002) 4067.
6. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller and Ph. Avouris: Phys. Rev.
Lett. 89 (2002) 10680.
7. T. Shimada, T. Okazaki, R. T. Sugai, H. Shinohara, Y. Ohno and T. Mizutani, Jpn. J. Appl.
Phys. 44 (2005) 469.
8. Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani, Appl. Phys. Lett. 86 (2005) 73105.
9. T. Mizutani, S. Iwatsuki, Y. Ohno and S. Kishimoto: Jpn. J. Appl. Phys. 44 (2005) 1599.
10. Y. Ohno, S. Kishimoto, T. Mizutani, T. Okazaki and H. Shinohara, Applied Physics Letters
84 (2004) 1368.
11. K. Tani, H. Ito, Y. Ohno, S. Kishimoto, M. Okochi, H. Honda and T. Mizutani, 2005 Int.
Microprocesses and Nanotechnology Conf., Tokyo, Japan (to be presented).
Biography
Takashi Mizutani received the B.S., M.S., and Ph.D. degrees in electronics
engineering from Nagoya University, Aichi, Japan, in 1971, 1973, and 1984,
respectively.
In 1973, he joined the Musashino Electrical Communication Laboratory,
NTT, Tokyo, where he worked on GaAs devices. In 1983, he moved to
NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan,
where he worked on InGaAs FETs and quantum-effect devices. Since 1995
he has been a professor at the Department of Quantum Engineering,
Nagoya University, and is conducting research in nanotube electronics,
compound semiconductor devices and quantum effect devices.
[1.] S. Li, Z. Yu and P. J. Burke, "Electrical Properties of 0.4 Cm Long Single Walled Carbon
Nanotubes", Nano Letters, 4, 2003-2007, (2004).
[2.] Z. Yu, S. Li and P. J. Burke, "Synthesis of Aligned Arrays of Millimeter Long, Straight
Single Walled Carbon Nanotubes", Chemistry of Materials, 16, 3414-3416, (2004).
[3.] P. J. Burke, "Ac Performance of Nanoelectronics: Towards a Thz Nanotube Transistor", Solid
State Electronics, 40, 1981-1986, (2004).
[4.] P. J. Burke, Z. Yu and C. Rutherglen, "Carbon Nanotubes for Rf and Microwaves (Plenary
Talk)", European Microwave Week 2005 (Paris), (2005).
Au
Au
0.4 cm
Single Walled Carbon Nanotube
1 mm
100MOhm
1MOhm
fT =
fT (GHz)
Resistance (Ohm)
10MOhm
Nano-Carbon?
500
200
100
50
100kOhm
InP
gm
2C gs
g m = 20 S
C gs = 40 aF / m
GaAs
Si
20
10
10kOhm
0.05
1kOhm
10nm
1m
100m
5 10
10mm
Length (m)
10000
100
UC Irvine
100
Length (mm)
Los Alamos/Duke
1000
10
1
10
Irvine
Duke
0.1
Stanford
Maryland
Date
Figure 1
Date
Jan-05
Jan-04
Jan-03
0.1
Jan-02
Dec-04
Dec-03
Dec-02
Jan-02
Jan-01
Jan-00
Jan-99
Jan-98
Jan-97
0.01
Physical and chemical properties of carbon nanostructure can be drastically altered by its
atomic defects and chirality. The stability and mobility for vacancy, interstitial and
topological defects in carbon nanotube, those are induced during HR-TEM observations, are
examined [1]. Thermal relaxation of metastable Frenkel defect (interstitial and vacancy pair)
created "in-situ" by electron irradiation is clearly observed at the temperatures above 473K,
and it is attributed to an instantaneous recombination (annihilation) of interstitials and
vacancies [2]. Then the chirality and handedness assignment of individual carbon nanotubes
will be demonstrated [3]. Also the migration behaviors of metal atoms in metallo-fullerene
peapods or doped peapods firmly correlated to the atomic defects in nanotube and /or
fullerene will be shown [4, 5, 6].
1.
A. Hashimoto, K. Suenaga, A. Gloter, K. Urita and S. Iijima, Nature 430 (2004) 870
2.
3.
4.
L. Guan, K. Suenaga, Z. Shi, Z. Gu and S. Iijima, Phys. Rev. Lett., 94 (2005) 045502
6.
7.
Biography
Kazu Suenaga was born in Osaka in 1966. He got his Ph.D in Materials Science at the
University of Tokyo in 1994. He was a postdoctoral fellow at Ecole Nationale
Superieure des Mined de Paris (1994-1997) and at the Solid State Physics Laboratory
in the University Paris-Sud (1997-1998). Then he jointed the Japan Science and
Technology Corporation as a researcher (1998-2001) and now is a Senior Research
Scientist at National Institute for Advanced Industrial Science
and Technology (AIST). He is also a group leader of the
JST-ERATO Nakamura Functional Carbon Cluster project. A
recipient of Honda Memorial Promotional prize (1997) and the
Seto prize (Japanese Society of Microscopy, 2005). His research
interests are on the atomic-scale characterization of novel
materials by EELS and (S)TEM.
50 m
2 m
2 m
40 m
a-plane
Figure 1. Aligned growth of single walled carbon nanotubes. (A) Low magnification SEM image of SWNTs
grown on ( 11 2 0 ) sapphire substrate. The white arrow shows the gas flow direction. Inset is a higher
magnification SEM image of the SWNTs. (B) AFM image of aligned SWNTs. Inset is the histogram of SWNT
diameters distribution. (C) SEM image of a second layer SWNTs grown on the sample shown in (A). The white
arrow points the gas flow direction. (D) Schematic diagram of SWNT on ( 11 2 0 ) sapphire substrate terminated
with oxygen atom. The red balls present oxygen atoms and blues ones are Aluminum atoms. The purple plane
shows the orientation of a-plane with [0001] direction perpendicular to the nanotube axis.
Carbon nanotube growth involves the interaction between nanotubes and substrate surfaces. This
interaction is so strong that it can influence carbon nanotube growth such as length and position. Thereby,
its possible that the growth direction of carbon nanotubes can be guided by certain morphologies of
atoms on substrate surfaces. For our approach, SWNTs were grown on single crystal ( 11 2 0 ) Al2O3
substrates. Ferritin clusters were monodispersed onto the Al2O3 substrates as catalysts. CVD growth of
SWNTs was performed at 900 C. Gas flows of C2H4, CH4 and H2 were controlled at 10 sccm, 2000 sccm
and 800 sccm respectively. After 10 minute growth, the samples were cooled down gradually and imaged
with Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM).
The SWNTs were grown uniformly on the whole surface area and their orientations were found to favor
certain crystalline direction of the substrate, regardless of the gas flow direction as shown in Fig. 1A.
Control experiments reveal that SWNTs are aligned normal to [0001] direction on a-plane sapphire
substrate. This is in sharp contrast to the randomly oriented growth of SWNTs on Si/SiO2 substrates.
These SWNTs are commonly tens of micrometers long. The inter-tube spacing is typically around 200
nm as shown in the inset of Fig. 1A and the highest density we got is 40 SWNTs/m. The carbon
nanotube diameters were measured by AFM (Fig. 1B). The result shows that the as-grown SWNT
diameters have narrow distribution, as the average diameter of 1.34 0.30 nm (Fig. 1B inset).
The same growth condition was applied to grow SWNTs on different orientations of single crystal Al2O3
substrates. We found that only on ( 1 1 02 ) oriented Al2O3 substrate, similar aligned SWNT growth was
achieved. These results imply that the surface interaction between a-plane or r-plane sapphire substrate
and SWNTs forces the nanotubes only grow alone certain directions. In addition, when a second layer of
SWNTs was grown atop the first layer by carrying out a second round of CVD synthesis, the growth
direction was along the gas flow direction and SWNTs can be a few hundred micrometers to millimeters
long (Fig. 1C). This observation, as a side proof, supports the hypothesis that the substrate-nanotube
interaction plays an important role for the SWNTs alignment since the first layer of nanotubes may
screen the interaction between the second layer and the substrates.
Figure 1D shows the schematic diagram of a SWNT on a-plane sapphire substrate terminated with
oxygen atoms. The oxygen chains, which are perpendicular to the [0001] direction as shown in the figure,
may strongly interact with SWNTs and guide the nanotubes to grow alone the directions that have lowest
potential energy. This strong force also holds the SWNTs close to the sapphire surface so that the
nanotube growth is always affected by this interaction. As the result, the first layer SWNTs grown on
sapphire substrates follow the favorite growth direction and they are much shorter than the second layer
SWNTs.
In a summary, we demonstrate that SWNTs can be aligned grown on a- or r-plane single crystal Al2O3
substrates with very high density and narrow diameter distribution over large area. Our synthesis of
dense arrays of well aligned and evenly spaced SWNTs paves the way toward large-scale assembling of
nanotube-on-insulator (NOI) devices and circuits, in analogy to the silicon-on-insulator (SOI) approach
adopted by the semiconductor industry. After post growth treatment, these NOI samples can provide
integration ready substrates. Using conventional fabrication techniques, high density integrated SWNT
devices can be realized over large area and combined with other chemical and biological systems.
References:
Template-Free Directional Growth of Single-Walled Carbon Nanotubes on a- and r-Plane Sapphire, S.
Han, X. Liu, and C. Zhou, J. of Am. Chem. Soc. 127, 5294 - 5295 (2005).
Biography
Dr. Fumiyuki Nihey is a Principal Researcher in NEC Fundamental
and Environmental Research Laboratories.
He was born in Fukushima, Japan, in 1962 and received B.S., M.S.,
and Ph.D degrees in physics from Osaka University in 1985, 1987,
and 1996, respectively. In 1987, he joined Microelectronics Laboratories, NEC Corporation, where he was engaged in compound
semiconductor device research. In 1991, he joined Fundamental
Research Laboratories in NEC Tsukuba, where he studied ballistic
transport and quantum interference phenomena in semiconductor
microstructures. He spent a year as a visiting scientist of M.I.T. in
1995, where he studied metal-insulator transition in periodic systems. He is currently responsible for the research and development
of carbon nanotubes for electronics applications.
Dr. Nihey is a member of Japanese Society of Applied Physics,
Physical Society of Japan, and American Physical Society. He has
served on Program Committee of International Microprocesses and
Nanotechnology Conference since 2004. He is also a visiting associate professor in Tsukuba University.
electron-phonon coupling at 200 fs, which is unexpectedly earlier compared to the thicker
nanotubes.
The other topic is a simulation of impurity extraction by means of optical surgical
knife. Oxygen impurities are most serious ones since they become strong scattering centers
for conducting electrons and initiate the structural degradation. Because of stronger C-O
bonds than C-C bonds, thermal and chemical processes are hopeless for eliminating the
oxygen impurities from carbon nanotube, while electronic excitation is expected to be useful
according to our simulation. We can introduce two holes in the C-O bonds by a resonant
Auger process initiated by O 1s core excitation. The simulation tells us a spontaneous
emission of an O atom from a nanotube upon the resonant Auger process [2]. Surprisingly,
nanotube can repair a big vacancy made upon O-emission by forming new C-C bonds.
Acknowledgements:
This work has been done in collaboration with Professors David Tomnek and Angel
Rubio, and Drs Savas Berber and Mina Yoon. Implementation of the computer program called
as First-Principles Simulation tool for Electron Ion Dynamics (FPSEID) [3] have been
achieved in collaboration with Professor Osamu Sugino. All calculations listed here have been
done by using SX5 in NEC Fuchu-plant and by using the Earth Simulator.
References
[1] T. Hertel, and G. Moos, Phys. Rev. Lett. 84, 5002 (2000).
[2] Y. Miyamoto, N. Jinbo, H. Nakamura, A. Rubio, and D. Tomnek, Phys. Rev. B70, 233408
(2004).
[3] O. Sugino and Y. Miyamoto, Phys. Rev. B B59, 2579 (1999); ibid, Phys. Rev. B66,
89901(E) (2002).
Biography
1987 Finished Master Degree at Osaka Univ.
1987 Joined NEC Fundamental Res. Labs.
1991 Got Doctor Degree From Osaka Univ.
1993-1995 Visited Researcher at UC Berkeley (Cohen/Louie Group)
1995- Current position
Short Bio: Michael Fuhrer received his B.S. in Physics from the
University of Texas at Austin in 1990. He received his Ph. D. in
Physics from the University of California at Berkeley in 1998 after
doing research on electronic and thermal transport in High-Tc and
fullerene superconductors with Alex Zettl. Dr. Fuhrer remained at
Berkeley as a postdoctoral researcher with Alex Zettl and Paul
McEuen, working on electronic transport in carbon nanotube
devices. Dr. Fuhrer joined the faculty at the University of Maryland
as an assistant professor in 2000 (promoted to Associate Professor
in 2005), where he is pursuing research on carbon nanotube
electronic
devices,
novel
two-dimensional
electronic
nanostructures, and molecular electronics.
Yoshihiro Iwasa
Institute for Materials Research
Tohoku University
Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
TEL: +81-22-215-2030
FAX: +81-22-215-2031
e-mail: iwasa@imr.tohoku.ac.jp
Yoshihiro Iwasa, born in 1958, received his Ph. D. degree at The University of Tokyo
in 1986. He became Research Associate (1986) and Lecturer (1991) at The University of
Tokyo, Associate Professor at Japan Advanced Institute of Science and Technology
(JAIST) (1994), and Professor at Institute for Materials Research, Tohoku University
(2001). He has been a visiting scientist at AT&T Bell Laboratories at Murray Hill, USA
(1993-94) and a visiting associate professor at The University of Tokyo (2000-2001).
His main field of research is physics of organic electronics and nanocarbon materials,
and superconductivity in intercalation compounds. He is currently focusing on integration
of nanoscaled materials for synthesizing functional materials, fabricating molecule based
devices, and controlling device properties. He has received Metal Research Promotion
Award (2002), IBM Japan Science Prize (2004), and Daiwa Adrian Prize (2004).
R. Martel T. Schmidt, H.R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447
(1998).
3
4
S. Wind, J. Appenzeller, R. Martel, V. Derycke, and Ph. Avouris, Appl. Phys. Lett. 80, 3817
(2002).
6
A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature 424, 654 (2003).
S. Wind, J. Appenzeller, Ph. Avouris, Phys. Rev. Lett. 91, 058301 (2003).
S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett.
J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris, Phys. Rev. Lett.
J. Appenzeller, J. Knoch, M. Radosavljevic, and Ph. Avouris, Phys. Rev. Lett. 92, 226802
(2004).
12
J. Appenzeller, Y.-M. Lin, J. Knoch, and Ph. Avouris, Phys. Rev. Lett. 93, 196805 (2004).
Biography
Dr. J. Appenzeller received the M.S. and Ph.D. degrees in physics
from the Technical University of Aachen, Germany in 1991 and
1995. His Ph.D. dissertation investigated quantum transport
phenomena in low dimensional systems based on III/V
heterostructures. He worked for one year as a Research Scientist
in the Research Center in Juelich, Germany before he became an
Assistant Professor with the Technical University of Aachen in
1996. During his professorship he explored mesoscopic electron transport in different
materials including carbon nanotubes and superconductor/semiconductor-hybride devices.
From 1998 to 1999, he was with the Massachusetts Institute of Technology, Cambridge, as a
Visiting Scientists, exploring the ultimate scaling limits of silicon MOSFET devices. Since
2001, he has been with the IBM T.J. Watson Research Center, Yorktown, NY, as a Research
Staff Member mainly involved in the investigation of the potential of carbon nanotubes for a
future nanoelectronics.
significant field enhancement on their tips, leading to the lowest threshold voltage for electron
emission among any other materials.
field emission microscopy (FEM) and dynamic behavior and degradation mechanism of
field-emitting CNTs observed by in-situ transmission electron microscopy (TEM).
1. FEM of CNT Field Emitters
FEM experiments were carried out in an ultra-high vacuum using multiwall carbon
nanotubes (MWNTs) produced by electric arc discharge.
observed in FEM patterns from a MWNT with clean surface, indicating preferential emission
from pentagons [1].
the pentagons where the local curvature is large compared to the other hexagon regions.
It was found that adsorption of gas molecules enhanced the electron emission irrespective
of molecular species inspected (H2, CO, N2, O2 and Ar) [2], and that the adsorption and
desorption of residual gas molecules were responsible for fluctuations in emission current.
It should also be noted that interference fringes are observed between the neighboring
pentagons. It was found that the fringe spacing was inversely proportional to the square root
of the accelerating voltage.
which can be explained in terms of the reduction of a virtual source size [3].
These
experimental results support the idea that the fringes were due to the interference of electron
beams emitted from the adjacent pentagons.
3. In-situ TEM of Field Emission from CNTs
CNTs examined are (1) double-wall CNTs (DWNTs), (2) closed-cap multiwall CNTs
(closed MWNTs) and (3) open-ended MWNTs (open MWNTs) produced by arc-discharge
method.
CNT emitters produced by arc discharge were attached to a tip of a tungsten (W)
needle by electrophoresis.
were held on a special sample holder of a TEM (JEM 2011), by which position of CNT
emitters relative to the copper anode can be adjusted finely and electric voltage can be applied
shortening of the bundle length are observed. Sublimation of DWNT bundles started from
their tips when the emission current exceeded 10 A [4].
subsequent sublimation of outer layers was observed when the emission current exceeded ca.
20 A. On the other hand, the closed MWNT did not show severe peeling of graphite layers
when the emission current was moderate (less than 25 A), though sublimation of a few
layers was observed at higher current.
to begin electron emission, but the maximum emission current without sublimation was the
lowest among the three kinds of CNTs examined.
emitter though its highest voltage was the highest among the three.
(a)
Fig. 1
(b)
TEM pictures of bundles of DWNTs field emitting at (a) 60 V, 2.5 A and (b) 100 V, 12 A.
Yahachi Saito received his B.E., M.E., and Dr. E. degree from Nagoya
University in 1975 ,1977 and 1980, respectively. In 1980, he was engaged
in Japan Society for the Promotion of Science. In 1981 he worked at
Toyohashi University of Technology.
University.
Controlling field emission characteristics of SWNT by varying the (n.m) structure and bundle size
Liang Zhang, Leandro Balzano, Daniel E. Resasco,
School of Chemical, Biological, and Materials Engineering, University of Oklahoma
This is a clear demonstration that the field emission characteristics of SWNT can be
controlled by the nanotube synthesis conditions.
[4] Photoexcited electron relaxation processes in single wall carbon nanotubes, J. Jiang, R.
Saito, A. Gruneis, S. G. Chou, Ge. G. Samsonidze, A. Jorio, G. Dresselhaus, and M. S.
Dresselhaus, Phys. Rev. B, 71, 045417, (2005)
[5] Quantum Decoherence in carbon nanotubes due to electron-phonon coupling, S. Roche, J.
Jiang, F. Triozon, R. Saito, Phys. Rev. Lett., in press.
Riichiro Saito
Department of Physics, and JST CREST, Tohoku University
3-6, Aoba, Aramaki, Aoba-ku, Sendai, 980-8758, Japan
TEL: +81-22-794-7754 FAX: +81-22-794-6447
e-mail: rsaito@phys.tohoku.ac.jp Web: http://flex.phys.tohoku.ac.jp/
Biography
Riichiro Saito was born on March 13th in 1958, and received
his Ph. D. at The University of Tokyo in 1985. He became
Research Associate at The University of Tokyo (1985),
Associate
Professor
at
The
University
of
Electro-Communications (1990), and Professor at
Department of Physics, Tohoku University (2003). He has
been a visiting scientist at Massachusetts Institute of
Technology (1991-2) at Prof. Gene Dresselhaus and Prof.
Mildred S. Dresselhaus. and Visiting Associate Professor at
The University of Tokyo (1990-1, 1993-4, 1997-8).
His main field of research is Physical Properties of Carbon Nanotubes. The same title of
book was published from Imperial College Press (1998) with Prof. Gene Dresselhaus and Prof.
Mildred S. Dresselhaus. He got the 13th Japan IBM prize (Physics, 1999). He has published
140 original papers and about 30 reviews.
special thermal property, i.e., its thermal-expansion coefficient coincides with that of glass
which is used as a material of vacuum vessels.
The CNT-FED will be valuable in high luminance and low power consumption for
large-screen-size display applications.
5m
the
development
and
manufacturing
of
and
to
NORITAKE
CO.,
LIMITED.
In 2000, the Japan Society of Applied Physics honored him with the Best Original Paper
award. In 2002, the Society for Information Display honored him with the Special
Recognition Award for pioneering contributions to the development of carbon-nanotube
field-emission display, and the Vacuum Technology Award was awarded to him by the
vacuum society of Japan.
SWCNTs in ceramics are high purity, well isolated and suspended in air. Furthermore,
intensity ratios of RBM peaks are different from each other. This means resonance effects of
each sample are different probably due to the different electronic structure.
To see a detailed electronic structure of each sample, resonance Raman spectra and
photoluminescence E11/E22 mapping were measured. Both measurements show the same
results that E22 excitation energy of semiconducting SWCNTs are about 50 meV higher than
those of the micelles while E11 emission energy shows no change. Detailed discussion will be
done in the presentation.
This work was in part supported by Industrial Technology Research Grant Program in 03
from New Energy and Industrial Technology Development Organization (NEDO) of Japan. A
part of this work was conducted in AIST Nano-Processing Facility, supported by
"Nanotechnology Support Project" of the Ministry of Education, Culture, Sports, Science and
Technology (MEXT), Japan.
Elaser=2.54eV
Co/MgO block
isolated SWCNT
Co/MgO powder
bundled SWCNT
100
150
200
250
300
350
-1
sample.
Biography
1987, Doctor of Engineering, Graduate School of Engineering,
Tsukuba University
1987,
Research
Associate,
Faculty
of
Science,
Tokyo
Metropolitan University
2004, Senior Research Scientist, Nanotechnology Research
Institute (NRI), National Institute of Advanced Industrial
Science and technology (AIST)
2005, Leader, Self-assembled nanoelectronics group, NRI, AIST
are investigated
by electron energy-loss spectroscopy (EELS) [2,3], scanning tunneling microscopy and spectroscopy
(STM/STS) [4] and field-effect transistors (FETs) transport measurements [5]. In semiconducting
nanotubes the band gap can be varied from ~0.5 to ~0.1 eV with inserted Gd@C82 endohedral
metallofullerenes with spatial periodicity of 1.1 nm to 8.0 nm, depending on the density of the
fullerenes. The present findings suggest that metallofullerene peapods may point the way toward novel
electronic devices.
Figure 1 shows a schematic representation of, what we call, nano-peapod (single-wall carbon
nanotube encapsulating endohedral metallofullerenes) on the basis of high-resolution transmission
electron microscopy (HRTEM) observations.
Fig.1
TEM images and electron energy loss spectra suggested that the metallofullerenes can be spaced
regularly as close as 1.1 nm in a high-density peapod structure, while 1.1 3 nm spacing was often
observed in a low-density peapod. In the present Gd@C82 peapod samples, about 10% of over 200
SWNT images showed locally modified semiconducting band gaps.
References
[1] H.Shinohara, Rep.Prog.Phys.63, 843 (2000).
[2] K.Suenaga et al., Phys. Rev.Lett. 90, 55506 (2003).
[3] K.Hirahara et al., Phys. Rev. Lett. 85, 5384 (2000).
[4] J. Lee et al., Nature 415 1005 (2002).
[5] T.Shimada et al. Appl.Phys.Lett. 81, 4067 (2002).
Hisanori Shinohara
Department of Chemistry & Institute for Advanced Research
Nagoya University
Nagoya 464-8602,
Japan
TEL:
+81-52-789-2482
FAX:
+81-52-789-1169
e-mail: noris@cc.nagoya-u.ac.jp
Hisanori Shinohara received his B.Sc. in 1977 from Shinshu University and his Ph.D. from Kyoto
University in 1983 in Chemical Physics. He joined the research group of Prof. Nishi as a research
associate of Institute for Molecular Science (IMS) at Okazaki in 1979 where he made some pioneering
works on laser spectroscopy of supersonic jet-cooled molecular clusters of water, ammonia, benzene
and so on. He then became an associate professor of Chemistry at Mie University in 1988. During this
period he started fullerenes and metallofullerenes works in addition to molecular microclusters. He
came to Nagoya University in 1993 as a full professor in Chemistry. He is the recipient of the Japan
Mass Spectrometry prize (1991), the Japan Metal Society prize (1994), the Japan IBM Science prize
(1996), and Molecular Science Forum Lectureship at Chinese Academy of Science (2002). He is widely
known for his achievement on the production and characterization of endohedral metallofullerenes and
novel carbon nanotube materials. His research team has been produced, purified and characterized
more than 70 endohedral metallofullerenes. His research team recently synthesized the first single-wall
carbon nanotubes with metallofullerenes encapsulated inside the nanotubes, which was reported in
Phys.Rev.Lett. and Science in 2000 and Nature in 2002.
Totally, he has published over 350 original and peer-reviewed scientific papers including
approximately 180 in the top physics and chemistry journals, and more than 60 review papers in
journals and books. He has also presented a lot of invited lectures/seminars and conference talks. He is
also the members of Japan Chemical Society, Japan Physical Society, Japan Mass Spectrometry
Society, Materials Research Society (U.S.A.), Electrochemical Society (U.S.A.), American Association
for the Advancement of Science (U.S.A.), and serve as referees in many international journals in
physics, chemistry, materials science and engineering.
In this case, the estimated current density of one nanotube was about 2.0108 A/cm2, which is
two orders of magnitude higher than the current density for Cu.
[Reference]
1. M. Nihei, et al., Japanese Journal of Applied Physics Vol. 44, No. 4A, pp.1626, 2005
2. M. Nihei et al., the IEEE 2005 International Interconnect Technology Conference, 2005
Via diameter: 2 m
105
SiO2
Co/Ti
Cu
Ti
CNT
106
via-2m
Cu
Ti
CNT
Ta (5 nm)
Cu (100 nm)
Ballistic limit of
SWNT (1 shell
104
103
Ni catalyst, 600C
102
Inner shells
10 shells
10
1
Co catalyst, 450C
Co catalyst, 510C
W plug
10-1
Cu via
10-2
Si sub.
10
102
103 104
105
106
(S/V)
G (S)
Electron-electron interactions are important in single-walled carbon nanotubes (SWNTs) because of their one-dimensional (1D) electronic dispersion. Describing the conduction electrons
in a perfect SWNT as a Luttinger liquid can explain the power-law energy dependence of tunneling rates seen in a number of transport experiments on nanotubes. However, real SWNTs include disorder and phonons, and theoretically little is known about disordered 1D systems with
interactions. An important aspect of annotates is that, unlike in an ideal 1D system, the electronic bands are modified by an applied magnetic field B [1]. This means SWNTs can exhibit
magnetic field sensitivity even at temperatures much higher than the Zeeman energy. The resulting magnetoresistance (variation of the linear resistance with B) can in principle be used to probe
important and currently unknown properties such as the dephasing length. In addition, as has
recently been shown, measurements of the nonlinear electrical transport in a magnetic field can
in principle be used to obtain the electronelectron interaction strength, as well as the
handedness of the nanotube [2,3,4].
With these considerations in mind we
studied two-terminal transport through
SWNTs in a magnetic field parallel to the
tube axis [5]. In this geometry the field
32
acts on the bands simply through an
200
Aharonov-Bohm phase shift. The resis100
tance of our nanotubes is dominated by
28
(a)
70
bulk disorder, with a backscattering length
Vg = -6.1 V
lb in the range 150 nm to 1 m, much less
T (K)
than the gold contact separation L = 4 m.
24
290
First, we found parabolic magnetoresistance at room temperature in the metallic regime which could be positive or
negative, typically of magnitude 5% at 16
0
T and only weakly dependent on gate volt200
290
age. An example is shown in Figure 1a.
100
Large negative magnetoresistance has
been seen previously near the conductance
70
-2
minimum in clean small-gap nanotubes at
100 K [6], where it could be explained by
(b)
a decreasing bandgap. However a new
mechanism may be needed to account for
-16
-8
0
8
16
B (T)
magnetoresistance in the metallic regime,
Figure 1. Magnetic field and temperature dependence
possibly taking account of interactions.
Second, we found that at low tempera- of two-terminal transport coefficients in a semiconducting nanotube device (characteristics inset at
tures the linear conductance G remains
the top). (a) The linear conductance G is symmetric
symmetric in B, as it must according to in B, in accordance with Onsager, but (b) the nonlinOnsager symmetry [7], but it fluctuates as ear coefficient of the V2B current term is not.
1
a function of B or gate voltage, and it shows a persistent dip at B = 0. Similar behavior has been
reported very recently for SWNTs with weak disorder in a perpendicular magnetic field [8]. The
results are reminiscent of single-particle quantum interference effects and weak localization. Indeed, magnetoresistance in SWNTs due to interference effects with scattering only at the contacts has been demonstrated [9]. However, the disordered regime appears not to have been considered theoretically before. One has to take into account the fact that the clean system is a Luttinger liquid not a Fermi liquid, and so interpreting the behavior in the dirty regime (conductance
much less than the ballistic limit of 4e2/h) in terms of coherent fermionic quasiparticles seems
hard to justify.
Finally, we measured the quadratic coefficient (B) in the nonlinear current-voltage characteristic, I(V) = G(B)V + (B)V2 + . We found in all three devices studied that (B) is asymmetric in B, in contrast with the Onsager symmetry of G. This is apparent in the data in Figure
1b. The B-antisymmetric component of (B) can only exist as a result of electron-electron interactions [2-4]. If one makes the expansion (B) = 0 + B + , the coefficient is proportional
to the strength of interactions in the sample and therefore can be used to deduce the interaction
parameter. This provides a powerful motivation for measuring in this and other systems. The
nonzero values of we find are strong evidence that interactions are relevant in nanotube transport, both at high and low temperatures. We believe this is the first time the coefficient has
been investigated in any detail, although a pioneering measurement was made once before [10].
Consistent with qualitative theoretical expectations, we find that at high temperatures is small
and has a constant sign independent of gate voltage. Note that in this regime the sign of could
in principle be used to measure the handedness of the nanotube. At low temperatures develops
reproducible mesoscopic fluctuations. There exist as yet no calculations of in 1D case with
which we can quantitatively compare the measurements.
This work was done by the authors of Ref. [5].
[1] H. Ajiki and T. Ando, Physica B 201, 349 (1994).
[2] E.L. Ivchenko and B. Spivak, Phys. Rev. B 66, 155404 (2002).
[3] B. Spivak and A. Zyuzin, Phys. Rev. Lett. 93, 226801 (2004).
[4] D. Sanchez and M. Buttiker, Phys. Rev. Lett. 93, 106802 (2004).
[5] J. Wei, M. Shimogawa, Z. Wang, I. Radu, R. Dormaier, D.H. Cobden, cond-mat/0506275.
[6] E. D. Minot, Y. Yaish, V. Sazonova, and P.L. McEuen, Nature 428, 536 (2004).
[7] L. Landau and E. M. Lifshitz, Statistical Physics Volume 1 (Butterworth-Heinemann, 1980).
[8] H.T. Man and A.F. Morpurgo, Phys. Rev. Lett. 95, 026801 (2005)
[9] J. Cao, Q. Wang, M. Rolandi, and H. Dai Phys. Rev. Lett. 93, 216803 (2004).
[10] V.Krstic, S.Roth, M.Burghard, K.Kern, G.L.J.A. Rikken, J. Chem. Phys. 117, 11315 (2002).
Biography
David H Cobden is an Assistant Professor in the Department of
Physics at the University of Washington. He received a PhD from
the University of Cambridge in 1992. He is interested in electronelectron interaction and correlation phenomena in nanostructures and
reduced dimensions, and their manifestations in electrical transport.
Most of his work has been on mesoscopic semiconductor devices and
carbon nanotubes.