BC807-25W, BC807-40W General Purpose Transistors: PNP Silicon

BC807-25W, BC807-40W
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and

PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
45
Collector Base Voltage
VCBO
50
Emitter Base Voltage
VEBO
5.0
IC
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board,

(Note 1) TA = 25C
PD
SC70
CASE 419
STYLE 3
460
mW
RqJA
272
C/W
TJ, Tstg
55 to +150
Collector Current Continuous
3
1
THERMAL CHARACTERISTICS
Thermal Resistance,
JunctiontoAmbient
Junction and Storage Temperature
MARKING DIAGRAM
5x M G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR4 Board, 1 oz. Cu, 100 mm2.
1
5x
M
G
= Device Code
x = B or C
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 4
Publication Order Number:

BC80725W/D
BC80725W, BC80740W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector Emitter Breakdown Voltage

(IC = 10 mA)
V(BR)CEO
45
Collector Emitter Breakdown Voltage

(VEB = 0, IC = 10 mA)
V(BR)CES
50
Emitter Base Breakdown Voltage

(IE = 1.0 mA)
V(BR)EBO
5.0
100
5.0
nA
mA
160
250
40
400
600
OFF CHARACTERISTICS
Collector Cutoff Current

(VCB = 20 V)
(VCB = 20 V, TJ = 150C)
ICBO
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
BC80725, SBC80725
BC80740, SBC80740
(IC = 500 mA, VCE = 1.0 V)
Collector Emitter Saturation Voltage

(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7
Base Emitter On Voltage

(IC = 500 mA, VCE = 1.0 V)
VBE(on)
1.2
fT
100
MHz
Cobo
10
pF
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Specific Marking
Package
Shipping
SC70
(PbFree)
3000 / Tape & Reel
5B
BC80725WT1G
SBC80725T1G*
BC80725WT3G
10,000 / Tape & Reel
BC80740WT1G
SBC80740WT1G*
SC70
(PbFree)
5C
3000 / Tape & Reel

10,000 / Tape & Reel
BC80740WT3G
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable.
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2
BC80725W, BC80740W
TYPICAL CHARACTERISTICS BC80725W, SBC80725W
500
1
VCE = 1 V
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150C
400
25C
300
200
55C
100
0
150C
25C
55C
0.1
0.01
0.001
0.01
0.1
0.001
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector

Current
Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current
VBE(on), BASEEMITTER VOLTAGE (V)
1.0
0.01
1.1
55C
IC/IB = 10
0.9
25C
0.8
150C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
55C
0.9
0.8
25C
0.7
0.6
150C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
Figure 3. Base Emitter Saturation Voltage vs.

Collector Current
Figure 4. Base Emitter Voltage vs. Collector

Current
1000
fT, CURRENTGAINBANDWIDTH
PRODUCT (MHz)
VBE(sat), BASEEMITTER
IC/IB = 10
VCE = 1 V
TA = 25C
100
10
0.1
10
100
1000
Figure 5. Current Gain Bandwidth Product vs.

Collector Current
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3
BC80725W, BC80740W
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
TJ = 25C
-0.8
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
-100
100
+1.0
qVC for VCE(sat)
C, CAPACITANCE (pF)
V, TEMPERATURE COEFFICIENTS (mV/C)
Figure 6. Saturation Region
-1.0
-2.0
-1.0
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT
Cib
10
Cob
1.0
-0.1
-1000
Figure 7. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitances
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4
-100
BC80725W, BC80740W
1000
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
VCE = 1 V
900
150C
800
700
600
500
25C
400
300
55C
200
100
0
150C
25C
55C
0.1
0.01
0.001
0.01
0.1
0.001
0.1
Figure 9. DC Current Gain vs. Collector

Current
Figure 10. Collector Emitter Saturation Voltage

VBE(on), BASEEMITTER VOLTAGE (V)
1.0
0.01
1.1
55C
IC/IB = 10
0.9
25C
0.8
150C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
0.9
55C
0.8
25C
0.7
0.6
0.5
150C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
Figure 11. Base Emitter Saturation Voltage vs.

Collector Current
Figure 12. Base Emitter Voltage vs. Collector

Current
1000
fT, CURRENTGAINBANDWIDTH
PRODUCT (MHz)
VBE(sat), BASEEMITTER
IC/IB = 10
VCE = 1 V
TA = 25C
100
10
0.1
10
100
Figure 13. Current Gain Bandwidth Product

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5
1000
BC80725W, BC80740W
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
TJ = 25C
-0.8
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
-100
100
+1.0
qVC for VCE(sat)
C, CAPACITANCE (pF)
V, TEMPERATURE COEFFICIENTS (mV/C)
Figure 14. Saturation Region
-1.0
-2.0
-1.0
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT
Cib
10
Cob
1.0
-0.1
-1000
Figure 15. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Capacitances
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6
-100
BC80725W, BC80740W
TYPICAL CHARACTERISTICS BC80725W, SBC80725W, BC80740W, SBC80740W
1
1 mS
1S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Rthja(t), TRANSIENT THERMAL RESPONSE (C/W)
Figure 17. Safe Operating Area
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
Single Pulse
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 18. Thermal Response
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7
10
100
1000
BC80725W, BC80740W
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
HE
1
b
e
A
0.05 (0.002)
A2
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed
at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each
customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

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BC80725W/D

BC807-25W, BC807-40W General Purpose Transistors: PNP Silicon

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BC807-25W, BC807-40W

S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AECQ101 Qualified and

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Total Device Dissipation FR 5 Board,

Collector Current Continuous

(Note: Microdot may be in either location)

Semiconductor Components Industries, LLC, 2014

November, 2014 Rev. 4

Publication Order Number:

Collector Emitter Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cutoff Current

(IC = 500 mA, VCE = 1.0 V)

Collector Emitter Saturation Voltage

Base Emitter On Voltage

3000 / Tape & Reel

10,000 / Tape & Reel

3000 / Tape & Reel

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain vs. Collector

Figure 2. Collector Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 3. Base Emitter Saturation Voltage vs.

Figure 4. Base Emitter Voltage vs. Collector

IC, COLLECTOR CURRENT (A)

Figure 5. Current Gain Bandwidth Product vs.

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TYPICAL CHARACTERISTICS BC80725W, SBC80725W

V, TEMPERATURE COEFFICIENTS (mV/C)

Figure 6. Saturation Region

qVB for VBE

Figure 7. Temperature Coefficients

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (A)

Figure 9. DC Current Gain vs. Collector

Figure 10. Collector Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 11. Base Emitter Saturation Voltage vs.

Figure 12. Base Emitter Voltage vs. Collector

IC, COLLECTOR CURRENT (A)

Figure 13. Current Gain Bandwidth Product

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TYPICAL CHARACTERISTICS BC80740W, SBC80740W

V, TEMPERATURE COEFFICIENTS (mV/C)

Figure 14. Saturation Region

qVB for VBE

Figure 15. Temperature Coefficients

Figure 16. Capacitances

IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR EMITTER VOLTAGE (V)