Automotive MOSFETs

OptiMOSTM Families Green and Robust

[ www.infineon.com/automotivemosfet ]

Infineon OptiMOS TM
Benchmark for Automotive MOSFETs
OptiMOSTM Products are Best in Class
OptiMOSTM superior performance is based on Infineons leading MOSFET
technology combined with the unsurpassed quality of robust package:
Best in class RDS(on) performance for increased system efficiency
Highest current DPAK + D2PAK on the market for reduced ECU module size
Lowest switching and conduction power losses for increased thermal
system reliability
Robust green package for easy process handling
New OptiMOSTM-T2 Product Family
New OptiMOSTM-T2 trench technology is the benchmark for applications in
energy efficiency, CO2 reduction, electric drives, etc. The new OptiMOSTM-T2
product family extends the existing families of OptiMOSTM-T and OptiMOSTM.
OptiMOSTM Robust Green Package
OptiMOSTM robust package is the benchmark for quality and reliability.
Robust package sustains 260C GREEN reflow processes at MSL1 combined
with automotive qualification. No special handling or dry-pack is needed.
All green packages are in compliance with RoHS/WEEE guidelines.

NEW!
NEW!

NEW!

NEW!

NEW!

Single MOSFET
N-Channel
N-Channel
N-Channel
N-Channel
N-Channel
N-Channel
P-Channel
Dual MOSFET
Dual N-Channel
P+N-Channel

Voltage Class
[V]

OptiMOSTM-T2
(Trench)

30
40
55
60
75
100
30 + 40

2 x 55
30 + 55

OptiMOSTM-T
(Trench)

OptiMOS TM
(Planar)

(
(

(
(
(
(
(
(

Green and Robust Package

INFINEON GREEN AND ROBUST MOSFET PACKAGES are designed to comply with RoHS
(Restriction of the use of Hazardous Substances Directive) and WEEE (Waste Electrical and
Electronic Equipment) regulations requirements. Lead-free PCB solders require higher
peak reflow temperatures combined with increased stress for the package compared to
leaded solders.
To avoid any temperature overstress (e.g. delamination of mold compound and metallic
contacts), Infineon Green and Robust MOSFET packages can sustain up to 260C peak
reflow temperatures and are fully backward compatible with existing leaded solder processes. This directly increased quality on system level of our customers.

Solder the attachment:

Mold compound:

PbSnAg material

Green, without

to enable increased solder reflow

halogens and

peak temperature up to 260C

antimony III oxide

to fulfill green
material requirements

Pre-mold treatment:

100% Sn lead finish:

Adhesion promoter

Green lead finish

to provide strong adhesion of Mold compound

to fulfill green

to all interfaces, even at increased solder conditions

material requirements

Power Bond Technology

POWER BOND IS INFINEONS HIGH-CURRENT wirebond technology. It addresses the bondwire

limitation in a MOSFETs current rating.
Power Bond reduces the RDS(on) drop of the bondwires and increases the current capability.
This also improves the reliability by keeping the wirebonds cooler, even with high currents.
Standard bonding

Power Bond 1

Power Bond 2

2x500m

3x500m

4x500m

Freeze
89.6
80.6
71.6
62.6
53.6
44.6
35.6
26.6

C
89.6
81.7
73.9
66.0
58.1
50.2
42.4
34.5
26.6

C
89.6
81.7
73.9
66.0
58.1
50.2
42.4
34.5
26.6

C
89.4
81.5
73.6
65.7
57.8
49.9
42.0
34.1
26.2

30 C

20 C

15 C

Power Bond Technology allows up to four double-stitch 500m wirebonds on a single

OptiMOSTM device, which enables a current rating of upto 180A in a TO263-7 package.
Power Bond Technology also increase current rating of a DPAK of upto 100A. Thus a standard
80A D2PAK can be replaced with a standard 100A DPAK plus 25% increase of output current.

DPAK replaces D 2PAK

100A

Higher current in
1/ PCB space
2

More features

80A

100A

or lower cost

80A

Package Integration
Dual Super SO8 Package

OptiMOS TM in Dual Super SO8

Dual OptiMOSTM
IPG20N06S2L-35
IPG20N06S2L-50
IPG20N06S2L-65
IPG20N06S3L-23
IPG20N06S3L-35
IPG15N06S3L-45

(
(
(
(
(
(

RDS(on) @ 10V (max.)

[m:/channel]
35
50
65
23
35
45

ID
[A]
2 x 20
2 x 20
2 x 20
2 x 20
2 x 20
2 x 15

RthJC (max.) Package*

[K/W]
8

2.3
8

2.9
8

3.5
8

3.3
8

5
8

7

* See packages on page 15

About the Package

Two N-Channel MOSFETs in one package with two isolated leadframes
One Dual Super SO8 can replace two DPAKs reducing area from
130mm to 32mm
4x reduction in PCB area and 2x reduction in part count
Dual Super SO8 can replace two existing OptiMOSTM DPAK products for
system level cost reduction (significant PCB area savings)
Dual Super S08 has exposed pad heat sink and large source lead,
thus provides higher current capabilities than a regular Dual S08 and
same Rth as DPAK with same chip.
All Bond wire is 200m thick for up to 20A current capability

Naming System

B 180 N 03 S4 L

Company:
S

non Green
products

Green
products

Device:
P

for Power MOSFET

Package type:
G

for Dual Super SO8

for TO220

for D2PAK (TO263)

for DPAK (TO252)

for I2PAK (TO262)

Continuous drain
current/ID(max)
P

for P-Channel

for N-Channel

Breakdown voltage divided by 10

S

for SIPMOSTM Planar N-Channel

S2 for OptiMOSTM Planar N-Channel

S3 for OptiMOSTM-T Trench N-Channel
S4 for OptiMOSTM-T2 Trench N-Channel
P4 for OptiMOSTM-T2 Trench P-Channel
L

for Logic level

RDS(on) in m

01

N-Channel MOSFETs 30V

OptiMOSTM-T2 30V (Trench)

Type

RDS(on) @ 10V (max.)

[m:]

ID
[A]

RthJC (max.)
[K/W]

Package*
5

5

3

3

3

3

3

3

3

1

1

1

2

2

2

4

4

4


NEW!

IPB180N03S4L-H0

0.9

180

0.6

NEW!

IPB180N03S4L-01

1.05

180

0.8

IPD90N03S4L-02

2.2

90

1.1

IPD90N03S4L-03

3.0

90

1.6

IPD70N03S4L-04

4.3

70

2.2

IPD50N03S4L-06

5.5

50

2.7

IPD40N03S4L-08

8.3

40

3.6

IPD30N03S4L-09

9.0

30

3.6

IPD30N03S4L-14

13.6

30

4.9

IPP80N03S4L-03

2.7

80

1.1

IPP80N03S4L-04

3.6

80

1.6

IPP22N03S4L-15

14.9

22

4.9

IPI80N03S4L-03

2.7

80

1.1

IPI80N03S4L-04

3.6

80

1.8

IPI22N03S4L-15

14.9

22

4.9

IPB80N03S4L-02

2.4

80

1.1

IPB80N03S4L-03

3.3

80

1.6

IPB22N03S4L-15

14.6

22

4.9

RDS(on) @ 10V (max.)

[m:]

ID
[A]

RthJC (max.)
[K/W]

Package*

OptiMOSTM 30V (Planar)

Type
IPD50N03S2L-06

6.4

50

1.1

3


IPD30N03S2L-07

6.7

30

1.1

3


IPD50N03S2-07

7.3

50

1.1

3


IPD30N03S2L-10

10.0

30

1.5

3


IPD30N03S2L-20

20.0

30

2.5

3


* See packages on page 15

N-Channel MOSFETs 40V

OptiMOSTM-T2 40V (Trench)

Type
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!

IPB180N04S4-00
IPB180N04S4-H0
IPB180N04S4-01
IPB120N04S4-01
IPB160N04S4-H1
IPB120N04S4-02
IPB90N04S4-02
IPB100N04S4-H2
IPB80N04S4-03
IPB80N04S4L-04
IPB80N04S4-04
IPB70N04S4-06
IPB45N04S4L-08
IPP/I120N04S4-01
IPP/I120N04S4-02
IPP/I90N04S4-02
IPP/I100N04S4-H2
IPP/I80N04S4-03
IPP/I80N04S4L-04
IPP/I80N04S4-04
IPP/I70N04S4-06
IPD100N04S4-02
IPD90N04S4-02
IPD90N04S4-03
IPD90N04S4L-04
IPD90N04S4-04
IPD90N04S4-05
IPD75N04S4-06
IPD50N04S4L-08
IPD50N04S4-08
IPD50N04S4-10
* See packages on page 15

(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(

RDS(on) @ 10V (max.)

[m:]

ID
[A]

RthJC (max.)
[K/W]

Package*

1.0
1.1
1.3
1.5
1.6
1.8
2.1
2.4
3.3
4.0
4.2
6.2
7.4
1.8
2.1
2.4
2.7
3.6
4.3
4.5
6.6
2.0
2.4
3.1
3.8
4.1
5.2
5.9
7.1
7.6
9.7

180
180
180
120
160
120
90
100
80
80
80
70
45
120
120
90
100
80
80
80
70
100
90
90
90
90
90
75
50
50
50

0.5
0.6
0.8
0.8
0.9
0.9
1.0
1.3
1.6
2.1
2.1
2.6
3.3
0.8
0.9
1.0
1.3
1.6
2.1
2.1
2.6
1.0
1.0
1.6
2.1
2.1
2.3
2.6
3.3
3.3
3.7

5

5

5

4

5

4

4

4

4

4

4

4

4

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

3

3

3

3

3

3

3

3

3

3


N-Channel MOSFETs 40V

OptiMOSTM-T 40V (Trench)

Type
IPD90N04S3-04
IPD80N04S3-06
IPD70N04S3-07
IPD50N04S3-08
IPD50N04S3-09
IPD90N04S3-H4
IPP/I120N04S3-02
IPP/I100N04S3-03
IPP/I80N04S3-03
IPP/I80N04S3-04
IPP/I80N04S3-06
IPP/I70N04S3-07
IPP/I80N04S3-H4
IPB180N04S3-02
IPB120N04S3-02
IPB160N04S3-H2
IPB100N04S3-03
IPB80N04S3-03
IPB80N04S3-04
IPB80N04S3-06
IPB70N04S3-07
IPB80N04S3-H4

(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(

RDS(on) @ 10V (max.)

[m:]
3.6
5.2
6.0
7.5
9.0
4.3
2.3
2.8
3.5
4.1
5.7
6.5
4.8
1.5
2.0
2.1
2.5
3.2
3.8
5.4
6.2
4.5

ID
[A]
90
90
82
50
50
90
120
100
80
80
80
80
80
180
120
160
100
80
80
80
80
80

RthJC (max.)
[K/W]
1.1
1.5
1.9
2.2
2.4
1.3
0.5
0.7
0.8
1.1
1.5
1.9
1.3
0.5
0.5
0.7
0.7
0.8
1.1
1.5
1.9
1.3

Package*

RDS(on) @ 10V (max.)

[m:]
3.3
3.4
3.6
3.7
4.0
2.7
2.9
3.0
3.1
3.3
3.4
3.7

ID
[A]
100
80
100
80
80
160
160
100
80
100
80
80

RthJC (max.)
[K/W]
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5

Package*

3

3

3

3

3

3

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

5

4

5

4

4

4

4

4

4


OptiMOSTM 40V (Planar)

Type
IPP100N04S2L-03
IPP80N04S2L-03
IPP100N04S2-04
IPP/I80N04S2-04
IPP/I80N04S2-H4
IPB160N04S2L-03
IPB160N04S2-03
IPB100N04S2L-03
IPB80N04S2L-03
IPB100N04S2-04
IPB80N04S2-04
IPB80N04S2-H4

(
(
(
(
(
(
(
(
(
(
(
(

1

1

1

1 ,
2

1 ,
2

4

4

4

4

4

4

4


* See packages on page 15

N-Channel MOSFETs 55V

OptiMOSTM 55V (Planar)

Type
IPD50N06S2L-13
IPD30N06S2L-13
IPD50N06S2-14
IPD30N06S2-15
IPD30N06S2L-23
IPD30N06S2-23
IPD26N06S2L-35
IPD25N06S2-40
IPD15N06S2L-64
IPD14N06S2-80
IPP100N06S2L-05
IPP/I80N06S2L-05
IPP100N06S2-05
IPP80N06S2-05
IPP80N06S2L-H5
IPP80N06S2-H5
IPP80N06S2L-06
IPP/I80N06S2-07
IPP80N06S2L-07
IPP/I80N06S2-08
IPP80N06S2L-09
IPP80N06S2-09
IPP80N06S2L-11
IPP77N06S2-12
IPB100N06S2L-05
IPB80N06S2L-05
IPB100N06S2-05
IPB80N06S2-05
IPB80N06S2L-H5
IPB80N06S2-H5
IPB80N06S2L-06
IPB80N06S2-07
IPB80N06S2L-07
IPB80N06S2-08
IPB80N06S2L-09
IPB80N06S2-09
IPB80N06S2L-11
IPB77N06S2-12
BSP603S2L
* See packages on page 15

10

(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(

RDS(on) @ 10V (max.)

[m:]
12.7
13.0
14.4
14.7
23.0
23.0
35.0
40.0
64.0
80.0
4.7
4.8
5.0
5.1
5.3
5.5
6.3
6.6
7.0
8.0
8.5
9.1
11.0
12.0
4.4
4.5
4.7
4.8
5.0
5.2
6.0
6.3
7.0
7.7
8.2
8.8
10.7
11.7
33.0

ID
[A]
30
50
50
30
30
30
26
25
15
14
100
80
100
80
80
80
80
80
80
80
80
80
80
77
100
80
100
80
80
80
80
80
80
80
80
80
80
77
5.2

RthJC (max.)
[K/W]
1.1
1.1
1.1
1.1
1.5
1.5
2.2
2.2
3.2
3.2
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.95
0.95
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.95
0.95
20.0

Package*
3

3

3

3

3

3

3

3

3

3

1

1 ,
2

1

1

1

1

1

1 ,
2

1

1 ,
2

1

1

1

1

4

4

4

4

4

4

4

4

4

4

4

4

4

4

6


N-Channel MOSFETs 60V

OptiMOSTM-T2 60V (Trench)

Type
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!

IPB180N06S4-H1
IPB120N06S4-H1
IPB120N06S4-02
IPB120N06S4-03
IPB90N06S4-04
IPB90N06S4L-04
IPB80N06S4-05
IPB80N06S4-07
IPB45N06S4-09
IPB80N06S4L-05
IPB80N06S4L-07
IPB45N06S4L-08
IPP/I120N06S4-H1
IPP/I120N06S4-02
IPP/I120N06S4-03
IPP/I90N06S4-04
IPP/I90N06S4L-04
IPP/I80N06S4-05
IPP/I80N06S4-07
IPP/I45N06S4-09
IPP/I80N06S4L-05
IPP/I80N06S4L-07
IPP/I45N06S4L-08
IPD90N06S4-04
IPD90N06S4L-03
IPD90N06S4-05
IPD90N06S4-07
IPD50N06S4-09
IPD90N06S4L-05
IPD90N06S4L-06
IPD50N06S4L-08
IPD50N06S4L-12
IPD30N06S4L-23
IPD25N06S4L-30

(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(
(

RDS(on) @ 10V (max.)

[m:]
1.7
2.1
2.4
2.8
3.7
3.4
5.4
7.1
9.1
4.8
6.4
7.9
2.4
2.8
3.1
4.0
3.7
5.7
7.4
9.4
5.1
6.7
8.2
3.8
3.5
5.1
6.9
9.0
4.6
6.3
7.8
12.0
23.0
30.0

ID
[A]
180
120
120
120
90
90
80
80
45
80
80
45
120
120
120
90
90
80
80
45
80
80
45
90
90
90
90
50
90
90
50
50
30
25

RthJC (max.)
[K/W]
0.60
0.60
0.8
0.9
1.0
1.0
1.4
1.9
2.1
1.4
1.9
2.1
0.6
0.8
0.9
1.0
1.0
1.4
1.9
1.7
1.4
1.9
2.1
1.0
1.0
1.4
1.9
2.1
1.4
1.9
2.1
3.0
4.2
5.1

Package*
5

4

4

4

4

4

4

4

4

4

4

4

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

1 ,
2

3

3

3

3

3

3

3

3

3

3

3


* See packages on page 15

11

N-Channel MOSFETs 75V and 100V

OptiMOSTM 75V (Planar)

Type

RDS(on) @ 10V (max.)

[m:]

ID
[A]

RthJC (max.)
[K/W]

Package*

IPD30N08S2L-21

20.5

30

1.1

3


IPD30N08S2-22

21.5

30

1.1

3


IPD22N08S2L-50

50.0

22

2.0

3


IPP100N08S2L-07

6.8

100

0.5

1


IPP100N08S2-07

7.1

100

0.5

1


IPP80N08S2L-07

7.1

80

0.5

1


IPP80N08S2-07

7.4

80

0.5

1


IPB100N08S2L-07

6.5

100

0.5

4


IPB100N08S2-07

6.8

100

0.5

4


IPB80N08S2L-07

6.8

80

0.5

4


IPB80N08S2-07

7.1

80

0.5

4


RDS(on) @ 10V (max.)

[m:]

ID
[A]

RthJC (max.)
[K/W]

Package*

OptiMOSTM-T 100V (Trench)

Type
IPD70N10S3-12

11.1

70

1.2

3


IPD70N10S3L-12

11.5

70

1.2

3


IPD50N10S3L-16

15

50

1.5

3


IPD35N10S3L-26

24

35

2.1

3


IPD30N10S3L-34

31

30

2.6

3


IPP/I100N10S3-05

5.1

100

0.5

1 ,
2


IPP/I70N10S3-12

11.6

70

1.2

1 ,
2


IPP/I70N10S3L-12

12.1

70

1.2

1 ,
2


IPP/I50N10S3L-16

15.7

50

1.5

1 ,
2


IPB100N10S3-05

4.8

100

0.5

4


IPB70N10S3-12

11.3

70

1.2

4


IPB70N10S3L-12

11.8

70

1.2

4


IPB50N10S3L-16

15.4

50

1.5

4


* See packages on page 15

12

P-Channel MOSFETs 30V

OptiMOSTM-T2 P-Channel 30V (Trench)

Type

RDS(on) @ 10V (max.)

[m:]

ID
[A]

RthJC (max.)
[K/W]

Package*

NEW!

IPD90P03P4L-04

4.1

90

1.1

3


NEW!

IPD80P03P4L-07

6.8

80

1.7

3


NEW!

IPD50P03P4L-11

10.5

50

2.6

3


NEW!

IPD90P03P4-04

4.5

90

1.1

3


NEW!

IPB80P03P4L-04

4.1

80

1.1

4


NEW!

IPB80P03P4L-07

6.9

80

1.7

4


NEW!

IPB45P03P4L-11

10.8

45

2.6

4


NEW!

IPB80P03P4-05

4.7

80

1.1

4


NEW!

IPP/I80P03P4L-04

4.4

80

1.1

1 ,
2


NEW!

IPP/I80P03P4L-07

7.2

80

1.7

1 ,
2


NEW!

IPP/I45P03P4L-11

11.1

45

2.6

1 ,
2


NEW!

IPP/I80P03P4-05

5.0

80

1.1

1 ,
2


RDS(on) @ 10V (max.)

[m]

ID
[A]

RthJC (max.)
[K/W]

Package*

OptiMOSTM-T2 P-Channel 40V (Trench)

Type
NEW!

IPD50P04P4L-11

11.1

50

2.6

3


NEW!

IPD70P04P4-09

9.3

70

2.0

3


NEW!

IPD90P04P4-05

4.8

90

1.1

3


NEW!

IPB70P04P4-09

9.4

70

2.0

4


NEW!

IPB80P04P4-05

4.9

80

1.1

4


NEW!

IPB180P04P4L-02

2.4

180

0.8

5


NEW!

IPP/IPI70P04P4-09

9.7

70

2.0

1 ,
2


NEW!

IPP/IPI80P04P4-05

5.2

80

1.1

1 ,
2


* See packages on page 15

13

Dual MOSFETs

Dual N-Channel OptiMOSTM 55V (Trench)

Type

RDS(on) @ 10V (max.)

[m:]

ID
[A]

RthJC (max.)
[K/W]

Package*

IPG20N06S3L-23

2 x 23.0

20

3.3

8


IPG20N06S3L-35

2 x 35.0

20

5.0

8


IPG15N06S3L-45

2 x 45.0

15

7.0

8


ID
[A]

RthJC (max.)
[K/W]

Package*

Dual N-Channel OptiMOSTM 55V (Planar)

Type

RDS(on) @ 10V (max.)

[m:]

BSO604NS2

2 x 35.0

50.0

7


NEW!

IPG20N06S2L-35

2 x 35.0

20

2.3

8


NEW!

IPG20N06S2L-50

2 x 50.0

20

2.9

8


NEW!

IPG20N06S2L-65

2 x 65.0

20

3.5

8


Dual N- + P-Channel OptiMOSTM-T 30V + 55V (Trench)

Type

RDS(on) @ 10V (max.)

[m:]

ID
[A]

RthJC (max.)
[K/W]

Package*

BTS 7904B

P-Channel 12.4
N-Channel 11.4

40

P-Channel 1.3
N-Channel 1.8

9


BTS 7904S

P-Channel 12.7
N-Channel 11.7

40

P-Channel 1.3
N-Channel 1.8

10


* See packages on page 15

14

Packages

PG-TO220-3

PG-TO262-3
(I2PAK)

PG-TO252-3
(DPAK)

PG-TO263-3
(D2PAK)

PG-TO263-7
(D2PAK 7pin)

PG-SOT-223

PG-DSO-8

PG-TDSON-8
(Dual Super SO8)

PG-TO263-5
(TO220-5 (SMD))

10 PG-TO220-5

15

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Infineon Technologies innovative semiconductor solutions

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17