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    Y34NB50

    Uploaded by

    Lui Drones
    This document provides specifications for an N-channel 500V MOSFET made by STMicroelectronics called the STY34NB50F. It has a maximum drain-source voltage of 500V, an on-resistance of 0.11 ohms, and can handle continuous drain currents of up to 34 amps. Key features include low intrinsic capacitance, minimized gate charge, and excellent avalanche and high switching capabilities. Applications include power supplies, motor drives, and welding equipment.

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    © All Rights Reserved
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    Y34NB50

    Uploaded by

    Lui Drones
    184 views8 pages
    This document provides specifications for an N-channel 500V MOSFET made by STMicroelectronics called the STY34NB50F. It has a maximum drain-source voltage of 500V, an on-resistance of 0.11 ohms, and can handle continuous drain currents of up to 34 amps. Key features include low intrinsic capacitance, minimized gate charge, and excellent avalanche and high switching capabilities. Applications include power supplies, motor drives, and welding equipment.

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    This document provides specifications for an N-channel 500V MOSFET made by STMicroelectronics called the STY34NB50F. It has a maximum drain-source voltage of 500V, an on-resistance of 0.11 ohms, and can handle continuous drain currents of up to 34 amps. Key features include low intrinsic capacitance, minimized gate charge, and excellent avalanche and high switching capabilities. Applications include power supplies, motor drives, and welding equipment.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    184 views8 pages

    Y34NB50

    Uploaded by

    Lui Drones
    This document provides specifications for an N-channel 500V MOSFET made by STMicroelectronics called the STY34NB50F. It has a maximum drain-source voltage of 500V, an on-resistance of 0.11 ohms, and can handle continuous drain currents of up to 34 amps. Key features include low intrinsic capacitance, minimized gate charge, and excellent avalanche and high switching capabilities. Applications include power supplies, motor drives, and welding equipment.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 8

     STY34NB50F

    N - CHANNEL 500V - 0.11Ω - 34 A - Max247


    PowerMESH MOSFET
    TYPE V DSS R DS(on) ID
    STY34NB50F 500 V < 0.14 Ω 34 A
    ■ TYPICAL RDS(on) = 0.11 Ω
    ■ EXTREMELY HIGH dv/dt CAPABILITY
    ■ ± 30V GATE TO SOURCE VOLTAGE RATING
    ■ 100% AVALANCHE TESTED
    ■ LOW INTRINSIC CAPACITANCE
    ■ GATE CHARGE MINIMIZED
    3
    ■ REDUCED VOLTAGE SPREAD 2
    1
    DESCRIPTION
    Using the latest high voltage MESH OVERLAY Max247
    process, STMicroelectronics has designed an ad-
    vanced family of power MOSFETs with outstand-
    ing performances. The new patent pending strip
    layout coupled with the Company’s proprietary
    edge termination structure, gives the lowest
    RDS(on) per area, exceptional avalanche and INTERNAL SCHEMATIC DIAGRAM
    dv/dt capabilities and unrivalled gate charge and
    switching characteristics.

    APPLICATIONS
    ■ HIGH CURRENT, HIGH SPEED SWITCHING

    ■ SWITCH MODE POWER SUPPLY (SMPS)

    ■ DC-AC CONVERTER FOR WELDING

    EQUIPMENT AND UNINTERRUPTABLE


    POWER SUPPLY AND MOTOR DRIVE

    ABSOLUTE MAXIMUM RATINGS


    Symb ol Parameter Value Un it
    V DS Drain-source Voltage (VGS = 0) 500 V
    V DGR Drain- gate Voltage (RGS = 20 kΩ) 500 V
    V GS G ate-source Voltage ± 30 V
    ID Drain Current (continuous) at Tc = 25 o C 34 A
    ID Drain Current (continuous) at Tc = 100 o C 21.4 A
    I DM (•) Drain Current (pulsed) 136 A
    o
    P tot T otal Dissipation at Tc = 25 C 450 W
    o
    Derating F actor 3.61 W/ C
    dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
    o
    T s tg Storage Temperature -65 to 150 C
    o
    Tj Max. O perating Junction Temperature 150 C
    (•) Pulse width limited by safe operating area ( 1) ISD ≤34 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

    December 1999 1/8


    STY34NB50F

    THERMAL DATA
    o
    R thj -case Thermal Resistance Junction-case Max 0.277 C/W
    o
    R thj -amb Thermal Resistance Junction-ambient Max 30 C/W
    o
    R thc-sink Thermal Resistance Case-sink Typ 0.1 C/W
    o
    Tl Maximum Lead Temperature F or Soldering Purpose 300 C

    AVALANCHE CHARACTERISTICS
    Symbo l Parameter Max Valu e Unit
    IAR Avalanche Current, Repetitive or Not-Repetitive 34 A
    (pulse width limited by Tj max)
    E AS Single Pulse Avalanche Energy 1000 mJ
    o
    (starting Tj = 25 C, I D = IAR , VDD = 50 V)

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    OFF
    Symbo l Parameter Test Con ditions Min. T yp. Max. Unit
    V (BR)DSS Drain-source I D = 250 µA V GS = 0 500 V
    Breakdown Voltage
    I DSS Zero G ate Voltage V DS = Max Rating 10 µA
    Drain Current (V GS = 0) V DS = Max Rating T c = 125 100 µA
    o
    C
    IGSS Gate-body Leakage V GS = ± 30 V ± 100 nA
    Current (VDS = 0)

    ON (∗)
    Symbo l Parameter Test Con ditions Min. T yp. Max. Unit
    V GS(th) Gate Threshold V DS = V GS ID = 250 µA 3 4 5 V
    Voltage
    R DS(on) Static Drain-source O n V GS = 10 V I D = 17 A 0.11 0.14 Ω
    Resistance
    I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x 34 A
    V GS = 10 V

    DYNAMIC
    Symbo l Parameter Test Con ditions Min. T yp. Max. Unit
    g f s (∗) Forward V DS > ID(o n) x R DS(on )ma x I D = 17 A 27 S
    Transconductance
    C iss Input Capacitance V DS = 25 V f = 1 MHz V GS = 0 5.9 nF
    C os s Output Capacitance 880 pF
    C rss Reverse T ransfer 80 pF
    Capacitance

    2/8
    STY34NB50F

    ELECTRICAL CHARACTERISTICS (continued)


    SWITCHING ON
    Symbo l Parameter Test Con ditions Min. T yp. Max. Unit
    t d(on) Turn-on Time V DD = 250 V I D =17 A 45 ns
    tr Rise Time R G = 4.7 Ω V GS =15 V 35 ns
    (see test circuit, figure 3)
    Qg Total Gate Charge V DD = 400 V ID = 34 A V GS = 10 V 140 196 nC
    Q gs Gate-Source Charge 38 nC
    Q gd Gate-Drain Charge 61 nC

    SWITCHING OFF
    Symbo l Parameter Test Con ditions Min. T yp. Max. Unit
    tr (Voff) Off-voltage Rise Time V DD = 400 V I D = 17 A 28 ns
    tf Fall Time R G = 4.7 Ω V GS = 15 V 30 ns
    tc Cross-over Time (see test circuit, figure 5) 60 ns

    SOURCE DRAIN DIODE


    Symbo l Parameter Test Con ditions Min. T yp. Max. Unit
    ISD Source-drain Current 34 A
    I SDM (•) Source-drain Current 136 A
    (pulsed)
    V SD (∗) Forward On Voltage I SD = 34 A V GS = 0 1.6 V
    t rr Reverse Recovery I SD = 34 A di/dt = 100 A/µs 715 ns
    Time V DD = 100 V T j = 150 o C
    Q rr Reverse Recovery (see test circuit, figure 5) 11.8 µC
    Charge
    I RRM Reverse Recovery 33 A
    Current

    (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %


    (•) Pulse width limited by safe operating area

    Safe Operating Area Thermal Impedance

    3/8
    STY34NB50F

    Output Characteristics Transfer Characteristics

    Transconductance Static Drain-source On Resistance

    Gate Charge vs Gate-source Voltage Capacitance Variations

    4/8
    STY34NB50F

    Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature


    Temperature

    Source-drain Diode Forward Characteristics

    5/8
    STY34NB50F

    Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

    Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge test Circuit
    Resistive Load

    Fig. 5: Test Circuit For Inductive Load Switching


    And Diode Recovery Times

    6/8
    STY34NB50F

    Max247 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.

    A 4.70 5.30

    A1 2.20 2.60

    b 1.00 1.40

    b1 2.00 2.40

    b2 3.00 3.40

    c 0.40 0.80

    D 19.70 20.30

    e 5.35 5.55
    E 15.30 15.90

    L 14.20 15.20

    L1 3.70 4.30

    P025Q

    7/8
    STY34NB50F

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
    subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics

     1999 STMicroelectronics – Printed in Italy – All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

    http://www.st.com
    8/8 .

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