IRF540

IRF540FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS

TYPE V DSS R DS( on) ID

IRF540 100 V < 0.077 Ω 30 A
IRF540FI 100 V < 0.077 Ω 16 A

■ TYPICAL RDS(on) = 0.045 Ω

■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE 3 3
2 2
■ HIGH CURRENT CAPABILITY 1 1
■ 175oC OPERATING TEMPERATURE

APPLICATIONS TO-220 ISOWATT220

■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
INTERNAL SCHEMATIC DIAGRAM
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

IRF540 IRF540FI
VD S Drain-source Voltage (V GS = 0) 100 V
V DG R Drain- gate Voltage (R GS = 20 kΩ) 100 V
V GS Gate-source Voltage ± 20 V
o
ID Drain Current (cont.) at Tc = 25 C 30 16 A
ID Drain Current (cont.) at Tc = 100 oC 21 11 A
ID M(•) Drain Current (pulsed) 120 120 A
o
P tot Total Dissipation at Tc = 25 C 150 45 W
Derating Factor 1 0.3 W/ o C
V ISO Insulation Withstand Voltage (DC)  2000 V
o
T stg Storage Temperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C
(•) Pulse width limited by safe operating area

July 1993 1/9

IRF540/FI

THERMAL DATA

TO-220 ISOWATT220
o
R thj-cas e Thermal Resistance Junction-case Max 1 3.33 C/W
o
Rthj- amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
R th c-s Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IA R Avalanche Current, Repetitive or Not-Repetitive 30 A
(pulse width limited by T j max, δ < 1%)
E AS Single Pulse Avalanche Energy 200 mJ
(starting T j = 25 o C, ID = I AR, VD D = 25 V)
E AR Repetitive Avalanche Energy 50 mJ
(pulse width limited by T j max, δ < 1%)
IA R Avalanche Current, Repetitive or Not-Repetitive 21 A
(T c = 100 o C, pulse width limited by T j max, δ < 1%)

o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V( BR)DSS Drain-source I D = 250 µA VG S = 0 100 V
Breakdown Voltage
I DS S Zero Gate Voltage V DS = Max Rating 250 µA
Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 oC 1000 µA
IG SS Gate-body Leakage V GS = ± 20 V ± 100 nA
Current (V D S = 0)

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA 2 2.9 4 V
R DS( on) Static Drain-source On V GS = 10V ID = 17 A 0.045 0.077 Ω
Resistance
I D( on) On State Drain Current V DS > ID( on) x RD S(on) max VG S = 10 V 30 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward V DS > ID( on) x RD S(on) max ID = 17 A 10 18 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VG S = 0 1600 2100 pF
C oss Output Capacitance 460 600 pF
C rss Reverse Transfer 140 200 pF
Capacitance

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 IRF540/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t d(on) Turn-on Time V DD = 50 V ID = 5 A 55 80 ns
tr Rise Time R i = 50 Ω VG S = 10 V 110 160 ns
t d(off ) Turn-off Delay Time (see test circuit) 290 410 ns
tf Fall Time 125 180 ns
Qg Total Gate Charge I D = 30 A V GS = 10 V 55 80 nC
Q gs Gate-Source Charge V DD = Max Rating x 0.8 11 nC
Q gd Gate-Drain Charge (see test circuit) 26 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

IS D Source-drain Current 30 A
I SDM(•) Source-drain Current 120 A
(pulsed)
V S D (∗) Forward On Voltage I SD = 30 A VG S = 0 1.6 V
t rr Reverse Recovery I SD = 30 A di/dt = 100 A/µs 140 ns
Time T j = 150 o C VDD = 50 V
Q rr Reverse Recovery 0.7 µC
Charge
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Safe Operating Area for TO-220 Package Safe Operating Area for ISOWATT220 Package

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IRF540/FI

Thermal Impedance for TO-220 Package Thermal Impedance for ISOWATT220 Package

Derating Curve for TO-220 Package Derating Curve for ISOWATT220 Package

Output Characteristics Transfer Characteristics

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 IRF540/FI

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature

Temperature

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Source-drain Diode Forward Characteristics

Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms

Switching Time Test Circuit Gate Charge Test Circuit

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 IRF540/FI

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7

L6 L4
P011C

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IRF540/FI

ISOWATT220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3

L6

L7
F1

Ø
G1

G
H

F2

1 2 3

L2 L4
P011G

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 IRF540/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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