STP55NE06

STP55NE06FP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V DSS R DS(on) ID
ST P55NE06 60 V < 0.022 Ω 55 A
ST P55NE06FP 60 V < 0.022 Ω 30 A

■ TYPICAL RDS(on) = 0.019 Ω

■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 oC
■ HIGH dv/dt CAPABILITY
3 3
■ APPLICATION ORIENTED 2 2
CHARACTERIZATION 1 1

DESCRIPTION TO-220 TO-220FP

This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAM
able manufacturing reproducibility.

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
STP55NE06 STP55NE06FP
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 kΩ) 60 V
V GS Gate-source Voltage ± 20 V
o
ID Drain Current (continuous) at Tc = 25 C 55 30 A
o
ID Drain Current (continuous) at Tc = 100 C 39 21 A
IDM (•) Drain Current (pulsed) 220 220 A
o
P t ot Total Dissipation at Tc = 25 C 130 35 W
o
Derating F actor 0.96 0.27 W/ C
V ISO Insulation Withstand Voltage (DC)  2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ ns
o
T stg Storage T emperature -65 to 175 C
o
Tj Max. O perating Junction Temperature 175 C
(•) Pulse width limited by safe operating area ( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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STP55NE06/FP

THERMAL DATA
T O-220 TO-220F P
o
R t hj-ca se Thermal Resistance Junction-case Max 1.15 4.28 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
R thc- si nk Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS
Symb ol Parameter Max Valu e Unit
I AR Avalanche Current, Repetitive or Not-Repetitive 55 A
(pulse width limited by Tj max, δ < 1%)
E AS Single Pulse Avalanche Energy 200 mJ
o
(starting Tj = 25 C, I D = IAR , VDD = 25 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
V (BR)DSS Drain-source I D = 250 µA V GS = 0 60 V
Breakdown Voltage
I DSS Zero G ate Voltage V DS = Max Rating 1 µA
Drain Current (VGS = 0) V DS = Max Rating T c = 125 10 µA
o
C
I GSS Gate-body Leakage V GS = ± 20 V ± 100 nA
Current (V DS = 0)

ON (∗)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
V GS(th) Gate Threshold V DS = VGS ID = 250 µA 2 3 4 V
Voltage
R DS( on) Static Drain-source On V GS = 10V ID = 27.5 A 0.019 0.022 Ω
Resistance
ID(o n) On State Drain Current V DS > I D(on) x R DS(on) max 55 A
V GS = 10 V

DYNAMIC
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
g fs (∗) Forward V DS > I D(on) x R DS(on) max I D =27.5 A 25 35 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VGS = 0 3050 4000 pF
C oss Output Capacitance 380 500 pF
C rss Reverse T ransfer 100 130 pF
Capacitance

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 STP55NE06/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
t d(on) Turn-on Time V DD = 30 V ID = 27.5 A 30 40 ns
tr Rise Time R G =4.7 W V GS = 10 V 120 160 ns
(see test circuit, figure 3)
Qg Total Gate Charge V DD = 48 V I D = 55 A V GS = 10 V 80 105 nC
Q gs Gate-Source Charge 13 nC
Q gd Gate-Drain Charge 25 nC

SWITCHING OFF
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
t r(Vof f) Off-voltage Rise Time V DD = 48 V I D = 55 A 20 30 ns
tf Fall Time R G =4.7 Ω VGS = 10 V 50 70 ns
tc Cross-over Time (see test circuit, figure 5) 75 100 ns

SOURCE DRAIN DIODE

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I SD Source-drain Current 55 A
I SDM (•) Source-drain Current 220 A
(pulsed)
V SD (∗) Forward On Voltage I SD = 60 A V GS = 0 1.5 V
t rr Reverse Recovery I SD = 55 A di/dt = 100 A/µs 110 ns
o
Time V DD = 30 V Tj = 150 C
Q rr Reverse Recovery (see test circuit, figure 5) 430 µC
Charge
I RRM Reverse Recovery 7.5 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

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STP55NE06/FP

Thermal Impedance for TO-220 Thermal Impedance forTO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

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 STP55NE06/FP

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature

Temperature

Source-drain Diode Forward Characteristics

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STP55NE06/FP

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 STP55NE06/FP

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7

L6 L4
P011C

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STP55NE06/FP

TO-220FP MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3

L6
L7
F1

¯
G1

G
H

F2

1 2 3

L2 L4

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 STP55NE06/FP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

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