SEMICONDUCTOR NKT135A/NKH135A Series RoHS

RoHS
Nell High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135A
(New INT-A-PAK Power Modules)

24 23 23
2.8x0.8+0.1

34+2

12+1
-
-
New INT-A-PAK
2−Ø6.5

15+1 3-M6 SCREWS

FEATURES 80+1

• High voltage 94+1

• Electrically isolated by DBC ceramic (AI 2O3)

• 3500 V RMS isolating voltage
• Industrial standard package

7+0.5
9
36+2
-
29+1
-
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in two

0.8
basic configurations
• Simple mounting All dimensions in millimeters

• UL approved file E320098

• Compliant to RoHS
• Designed and qualified for multiple level
NKT NKH
APPLICATIONS + +
• DC motor control and drives
• Battery charges
~ - ~ -
• Welders
• Power converters
• Lighting control ~ - ~ -
+ K2 G2 +
• Heat and temperature control K1 G1 G1 K1

PRODUCT SUMMARY
IT(AV) 135 A

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUE UNITS
IT(AV) 85 ° C 135 A
IT(RMS) 85 ° C 212
50 Hz 3800 A
ITSM
60 Hz 3990
50 Hz 72.2
I2t kA2s
60 Hz 65.9
I2√t 722 kA2√s
VDRM / VRRM Range 400 to 1600 V
TJ Range -40 to 125 ° C

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 SEMICONDUCTOR NKT135A/NKH135A Series RoHS
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Nell High Power Products

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM /V DRM , MAXIMUM REPETITIVE VRSM /V DSM , MAXIMUM NON-REPETITIVE IRRM /I DRM
TYPE VOLTAGE
PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 125 ° C
NUMBER CODE
V V mA
04 400 500
08 800 900
NKT135
12 1200 1300 20
NKH135
14 1400 1500
16 1600 1700

FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS
Maximum average on-state current 135 A
IT(AV) 180° conduction, half sine wave ,50Hz
at case temperature 85 °C
Maximum RMS on-state current lT(RMS) 180° conduction, half sine wave ,50Hz ,TC = 85°C 212

Maximum peak, one-cycle, on-state t = 10 ms 3800 A

ITSM
non-repetitive surge current t = 8.3 ms No voltage 3990
Sine half wave,
t = 10 ms reapplied 72.2
initial TJ =
t = 8.3 ms TJ maximum 65.9
Maximum I 2t for fusing I 2t kA2s
t = 10 ms 100%V RRM 50.5
t = 8.3 ms reapplied 46
2√
Maximum I 2√t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 722 kA2√s

Maximum on-state voltage drop VTM ITM = 480A , TJ = 25 ° C, 180° conduction 1.7
V
Maximum forward voltage drop VFM IFM = 480A, TJ = 25 ° C, 180° conduction 1.4

Maximum holding current IH Anode supply = 6 V initial I T = 30 A, TJ = 25 ° C 40~150

Anode supply = 6 V resistive load = 1 Ω mA
Maximum latching current IL 400
Gate pulse: 10 V, 100 μs, TJ = 25 ° C

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and IRRM,
TJ = 125 ° C 20 mA
off-state leakage current IDRM
50 Hz, circuit to base, 2500 (1min)
RMS isolation Voltage VISO V
all terminals shorted 3500 (1s)
Critical rate of rise of TJ = TJ maximum,
dV/dt 800 V/μs
off-state voltage exponential to 67 % rated V DRM

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 SEMICONDUCTOR NKT135A/NKH135A Series RoHS
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Nell High Power Products
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM t p ≤ 5 ms, TJ = TJ maximum 10
W
Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 3
Maximum peak gate current IGM 3 A
Maximum peak negative t p ≤ 5 ms, TJ = TJ maximum
- VGT 10
gate voltage
V
Maximum required DC
VGT 0.7~1.8
gate voltage to trigger
TJ = 25 ° C Anode supply = 6 V,
Maximum required DC resistive load; Ra = 1 Ω
I GT 30~150 mA
gate current to trigger

Maximum gate voltage VGD V

0.25
that will not trigger
TJ = TJ maximum, 66.7% V DRM applied
Maximum gate current
I GD 10 mA
that will not trigger
Maximum rate of rise of
dI/dt TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs 150 A/μs
turned-on current

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
TJ - 40 to 125
temperature range
°C
Maximum storage
TStg - 40 to 150
temperature range
Maximum thermal resistance,
RthJC DC operation 0.2
junction to ca se per junction
° C/W
Maximum thermal resistance,
RthCS Mounting surface, smooth , flat and greased 0.055
case to heatsink per module

A mounting compound is recommended and the

Mounting IAP to heatsink , M6 torque should be rechecked after a period of
torque ± 10 % busbar to IAP , M6 3 hours to allow for the spread of the compound. 4 to 6 N.m
Lubricated threads.

Approximate weight 220 g

7.05 oz.

Case style New INT-A-PAK

ORDERING INFORMATION TABLE

Device code NKT 135 / 16 A

1 2 3 4

1 - Module type: NKT for (Thyristor + Thyristor) module

NKH for (Thyristor + Diode) module

2 - Current rating: IT(AV)

3 - Voltage code x 100 = V RRM
4 - Assembly type,”A” for soldering type

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 SEMICONDUCTOR NKT135A/NKH135A Series RoHS
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Nell High Power Products
Fig.1 On-state current vs. voltage characteristic Fig.2 Transient thermal impedance(junction-case)

5 0.25

Transient thermal impedance (° C/W)

On-state peak voltage (V)

T J = 125 ° C 0.2
4

0.15

0.1

2
0.05

1 0
100 1000 10000 0.001 0.01 0.1 1 10

On-state current (A) Time (s)

Fig.3 Power consumption vs. average current Fig.4 Case temperature vs. on-state average current

350 140
180°
Maximum power consumption (W)

300 120° 120

90°
ase temperature (° C)

0 180 0 180
60°
250 100
Conduction Angle Conduction Angle
30°
200 80

150 60

100 40

50 20 30° 60° 90° 120° 180°

0 0
0 50 100 150 200 0 50 100 150 200 250

On-state average current (A) On-state average current (A)

Fig.5 On-state surge current vs cycles Fig.6 Gate characteristics

4.5
2
On-state surge current (KA)

4 Peak Forward Gate Voltage (10V)

10 1
Pe
3.5 Po ak
Av we Ga
5
Gate voltage (V)

Po era r ( te
Peak Gate Current (3A)

we ge 10
r( G w)
3w at
3 ) e
2

2.5 10 0

5
2 125 ° C 25 ° C -30°C

1.5 2 Maximum Gate Voltage that will not trigger any unit

10 -1
1 10 1 2 5 10 2 2 5 10 3 2 5
1 10 100
Gate current (mA)
Cycles @50Hz

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