CM200DU-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Dual IGBTMOD™
200 Amperes/1200 Volts

TC MEASURING
POINT
A
D
F
T (4 TYP.)

G2
E2
H
CL
B E J
C2E1 E2 C1 E1 U
CM H
G1

Q Q P N Description:
G
S - NUTS (3 TYP) Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
K K K R
of two IGBT Transistors in a half-
M
bridge configuration with each tran-
sistor having a reverse-connected
C
L super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
G2 simplified system assembly and
E2 thermal management.
RTC Features:
□ Low Drive Power
C2E1
E2 C1 □ Low VCE(sat)
RTC
□ Discrete Super-Fast Recovery
Free-Wheel Diode
E1 □ Isolated Baseplate for Easy
G1 Heat Sinking
Applications:
Outline Drawing and Circuit Diagram □ AC Motor Control
□ UPS
Dimensions Inches Millimeters Dimensions Inches Millimeters □ Battery Powered Supplies
A 4.25 108.0 L 0.87 22.0 Ordering Information:
B 2.44 62.0 M 0.33 8.5 Example: Select the complete
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 N 0.10 2.5 module number you desire from
D 3.66±0.01 93.0±0.25 P 0.85 21.5 the table - i.e. CM200DU-24F is a
1200V (VCES), 200 Ampere Dual
E 1.88±0.01 48.0±0.25 Q 0.98 25.0
IGBTMOD™ Power Module.
F 0.67 17.0 R 0.11 2.8
G 0.16 4.0 S M6 M6 Current Rating VCES
Type Amperes Volts (x 50)
H 0.24 6.0 T 0.26 Dia. 6.5 Dia.
CM 200 24
J 0.59 15.0 U 0.02 0.5
K 0.55 14.0 V 0.62 15.85

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 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200DU-24F Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 200 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes
Emitter Current** (Tc = 25°C) IE 200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 890 Watts
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 40 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts
IC = 200A, VGE = 15V, Tj = 125°C – 1.9 – Volts
Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V – 2200 – nC
Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes/1200 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 78 nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 3.4 nf
Reverse Transfer Capacitance Cres – – 2 nf
Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 200A, – – 300 ns
Load Rise Time tr VGE1 = VGE2 = 15V, – – 80 ns
Switch Turn-off Delay Time td(off) RG = 1.6⍀, – – 500 ns
Times Fall Time tf Inductive Load – – 300 ns
Diode Reverse Recovery Time** trr Switching Operation – – 200 ns
Diode Reverse Recovery Charge** Qrr IE = 200A – 12.2 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference – 0.15 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference – – 0.18 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, – 0.08 °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

3
 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes/1200 Volts

COLLECTOR-EMITTER COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
400 11 10 9.5 3 5
Tj = 25oC 15 VGE = 15V Tj = 25°C

SATURATION VOLTAGE, VCE(sat), (VOLTS)

SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)

Tj = 25°C
VGE = 20V
Tj = 125°C 4
300 9

COLLECTOR-EMITTER
COLLECTOR-EMITTER
2
3
IC = 400A
200
8.5 IC = 200A
2
1
100 IC = 80A
8 1

0 0 0
0 1 2 3 4 0 100 200 300 400 0 6 8 10 12 14 16 18 20
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE HALF-BRIDGE

FORWARD CHARACTERISTICS CAPACITANCE VS. VCE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
103 102 103 td(off)
Tj = 25°C Cies
tf
td(on)
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)

SWITCHING TIME, (ns)

101 102
tr
102

Coes
100 101 VCC = 600V
Cres VGE = ±15V
RG = 1.6 Ω
VGE = 0V Tj = 125°C
Inductive Load
101 10-1 100
0 1.0 2.0 3.0 4.0 10-1 100 101 102 101 102 103
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)

TRANSIENT THERMAL
REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) GATE CHARGE, VGE (IGBT & FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

10-3 10-2 10-1 100 101

103 103 20 101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

VCC = 600V IC = 200A Per Unit Base

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

VGE = ±15V Rth(j-c) = 0.15°C/W (IGBT)

REVERSE RECOVERY TIME, trr, (ns)

RG = 1.6 Ω Rth(j-c) = 0.18°C/W (FWDi)

Zth = Rth • (NORMALIZED VALUE)

16
Tj = 25°C 100 Single Pulse
VCC = 400V
Inductive Load Irr TC = 25°C
trr 12 VCC = 600V
102 102 10-1 10-1
8

10-2 10-2
4

101 101 0 10-3 10-3

101 102 103 0 500 1000 1500 2000 2500 3000 10-5 10-4 10-3
EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)
TIME, (s)