MITSUBISHI IGBT MODULES

CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

TC Measured
Point
A
D F
S(4 - Mounting
Holes)

H
B E U J
T CM H

Description:
3 - M6 Nuts Q Q P N G
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
K K K R IGBTs in a half-bridge configuration
M
with each transistor having a re-
verse-connected super-fast recov-
C L ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
G2 Features:
E2 u Low Drive Power
u Low VCE(sat)
C2E1 E2 C1
u Discrete Super-Fast Recovery
E1 Free-Wheel Diode
G1 u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking

Outline Drawing and Circuit Diagram Applications:

u AC Motor Control
Dimensions Inches Millimeters Dimensions Inches Millimeters u Motion/Servo Control
A 4.25 108.0 K 0.71 18.0 u UPS
B 2.44 62.0 L 0.87 22.0 u Welding Power Supplies
C 1.14 +0.04/-0.02 29 +1.0/-0.5 M 0.33 8.5 Ordering Information:
D 3.66±0.01 93.0±0.25 N 0.10 2.5 Example: Select the complete
E 1.88±0.01 48.0±0.25 P 0.85 21.5 module number you desire from
F 0.87 22.0 Q 0.98 25.0
the table - i.e. CM200DU-24H is a
1200V (VCES), 200 Ampere Dual
G 0.16 4.0 R 0.11 2.8
IGBT Module.
H 0.24 6.0 S 0.25 Dia. 6.5 Dia.
J 0.59 15.0 T 0.6 15.15 Current Rating VCES
Type Amperes Volts (x 50)
CM 200 24

Sep.2000
 MITSUBISHI IGBT MODULES

CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Symbol Ratings Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 200 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes
Emitter Current** (Tc = 25°C) IE 200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 1130 Watts
Mounting Torque, M6 Main Terminal – 3.5~4.5 N·m
Mounting Torque, M6 Mounting – 3.5~4.5 N·m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 200A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V – 750 – nC
Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

Dynamic Electrical Characteristics, TTj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 30 nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 10.5 nF
Reverse Transfer Capacitance Cres – – 6 nF
Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 200A, – – 200 ns
Load Rise Time tr VGE1 = VGE2 = 15V, – – 300 ns
Switch Turn-off Delay Time td(off) RG = 1.6Ω, Resistive – – 300 ns
Times Fall Time tf Load Switching Operation – – 350 ns
Diode Reverse Recovery Time trr IE = 200A, diE/dt = -400A/µs – – 300 ns
Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = -400A/µs – 1.1 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.11 °C/W
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.18 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W

Sep.2000
 MITSUBISHI IGBT MODULES

CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
400 400 5
Tj = 25oC 15 VCE = 10V VGE = 15V
12

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

VGE = 20V Tj = 25°C Tj = 25°C
320 320 Tj = 125°C 4 Tj = 125°C

COLLECTOR-EMITTER
11
240 240 3

10
160 160 2

9
80 80 1
8

0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 80 160 240 320 400
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 103 102
Tj = 25°C Tj = 25°C VGE = 0V
SATURATION VOLTAGE, VCE(sat), (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8
IC = 400A
COLLECTOR-EMITTER

101 Cies
6
IC = 200A
102
4 Coes
100

2
IC = 80A Cres

0 101 10-1
0 4 8 12 16 20 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
103 103 102 20
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

di/dt = -400A/µsec IC = 200A

tf
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

Tj = 25°C VCC = 400V

REVERSE RECOVERY TIME, trr, (ns)

16
td(off)
SWITCHING TIME, (ns)

trr
VCC = 600V
12
td(on)
102 102 Irr 101

tr
8

VCC = 600V
VGE = ±15V 4
RG = 1.6 Ω
Tj = 125°C
101 101 100 0
101 102 103 101 102 103 0 250 500 750 1000
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

Sep.2000
 MITSUBISHI IGBT MODULES

CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
( IGBT) (FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101
101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Zth = Rth • (NORMALIZED VALUE)

100
Per Unit Base = Rth(j-c) = 0.11°C/W Zth = Rth • (NORMALIZED VALUE) 100
Per Unit Base = Rth(j-c) = 0.18°C/W

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

Sep.2000