CM400DU-24NFJ

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
NFJ-Series Module
400 Amperes/1200 Volts

A
M D M

E2 G2
H

E J B V
C2E1 E2 C1
G1 E1
H
V
U
W N AE V
Y
X
L Description:
Q Q P
AF G Powerex IGBTMOD™ Modules are
S - NUTS (3 TYP)
R designed for use in high
T - (4 TYP) frequency applications; 30 kHz
AA AA AC for hard switching applications
Z Z Z AB and 60 to 70 kHz for soft switching
K K K
applications. Each module
AD M
consists of two IGBT Transistors
C
F in a half-bridge configuration with
LABEL
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
G2 and interconnects are isolated from
E2
the heat sinking baseplate, offering
C2E1
simplified system assembly and
E2 C1
thermal management.
E1
G1 Features:
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Outline Drawing and Circuit Diagram Free-Wheel Diode
Dimensions Inches Millimeters Dimensions Inches Millimeters £ Isolated Baseplate for Easy
A 4.33 110.0 R 0.47 12.0 Heat Sinking
B 3.15 80.0 S M6 Metric M6 Applications:
C 1.14+0.04/-0.01 29.0+1.0/-0.5 T 0.26 Dia. 6.5 Dia. £ Power Supplies
D 3.66±0.01 93.0±0.25 U 0.4 10.0 £ Induction Heating
E 2.44±0.01 62.0±0.25 V 0.02 0.5 £ Welders
F 0.83 21.2 W 0.87 22.2
G 0.16 4.0 X 0.72 18.25
Ordering Information:
Example: Select the complete
H 0.24 6.0 Y 0.36 9.25
part module number you desire
J 0.59 15.0 Z 0.71 18.0
from the table below -i.e.
K 0.55 14.0 AA 0.28 7.0 CM400DU-24NFJ is a 1200V
L 0.35 9.0 AB 0.16 4.0 (VCES), 400 Ampere Dual
M 0.33 8.5 AC 0.11 2.8 IGBTMOD™ Power Module.
N 0.69 17.5 AD 0.3 7.5
Type Current Rating VCES
P 0.85 21.5 AE 1.23 31.4 Amperes Volts (x 50)
Q 0.98 25.0 AF 0.21 5.3
CM 400 24

12/11 Rev. 1 1
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM400DU-24NFJ
Dual IGBTMOD™ NFJ-Series Module
400 Amperes/1200 Volts

Maximum Ratings, Tj = 25°C unless otherwise specified

Characteristics Symbol Rating Units
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (Operation)*2 IC 400 Amperes
Collector Current (Pulse)*2 ICM 800 Amperes
Maximum Power Dissipation (TC = 25°C)*2,*4 PC 2450 Watts
Emitter Current (Operation)*2 IE*1 400 Amperes
Emitter Current (Pulse)*2 IEM*1 800 Amperes
Isolation Voltage (Charged Part to Baseplate, f = 60 Hz, AC 1 Minute) VISO 2500 Vrms
Junction Temperature Tj -40 ~ +150 °C
Storage Temperature Tstg -40 ~ +125 °C

Mechanical Characteristics
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Torque Strength M Main Terminals, M6 Screw 31 35 40 in-lb
M Mounting, M6 Screw 31 35 40 in-lb
Weight — 580 — Grams
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*4 Case temperature (TC) is measured point is just under the chips.

0 0

31.4 Tr2 Tr2

Di1 Tr1 35.0

44.7 Di2 Di2

Di1 Tr1 48.2

LABEL SIDE
0 33.6 46.6 65.8 78.8

Each mark points to the center position of each chip.

Tr1 / Tr2: IGBT Di1 / Di2: FWDi Tolerance ±1 mm

2 12/11 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM400DU-24NFJ
Dual IGBTMOD™ NFJ-Series Module
400 Amperes/1200 Volts

Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES ±VGE = VGES, VCE = 0V — — 1.4 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C*3 — 5.0 6.5 Volts
IC = 400A, VGE = 15V, Tj = 125°C*3 — 5.0 — Volts
Forward Transfer Admittance |γfs| IC = 400A, VCE = 10V*3 120 — — S
Input Capacitance Cies — — 63 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 5.3 nF
Reverse Transfer Capacitance Cres — — 1.2 nF
Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 1800 — nC
Turn-on Delay Time td(on) — — 300 ns
Turn-on Rise Time tr VCC = 600V, IC = 400A, — — 100 ns
Turn-off Delay Time td(off) VGE = ±15V, RG = 0.78Ω, — — 500 ns
Turn-off Fall Time tf Inductive Load, — — 150 ns
Reverse Recovery Time trr *1 IE = 400A — — 100 ns
Reverse Recovery Charge Qrr*1 — 7.0 — µC
Emitter-Collector Voltage VEC*1 IE = 400A, VGE = 0V*3 — 5.5 7.0 Volts
Internal Gate Resistance RGint Tc = 25°C, Per Switch — 3.0 — Ω
External Gate Resistance RG 0.78 — 7.8 Ω

Thermal Resistance Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT Part*4 — — 0.051 K/W
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi Part*4 — — 0.093 K/W
Contact Thermal Resistance Rth(c-f) Case to Heatsink, — 0.02 — K/W
Thermal Grease Applied*4*5
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
If using this value, thermal resistance of heatsink, Rth(f-a), should be measured just under the chips.
0 0

31.4 Tr2 Tr2

Di1 Tr1 35.0

44.7 Di2 Di2

Di1 Tr1 48.2

LABEL SIDE
0 33.6 46.6 65.8 78.8

Each mark points to the center position of each chip.

Tr1 / Tr2: IGBT Di1 / Di2: FWDi Tolerance ±1 mm

*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

12/11 Rev. 1 3
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM400DU-24NFJ
Dual IGBTMOD™ NFJ-Series Module
400 Amperes/1200 Volts

COLLECTOR-EMITTER COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
800 800 9
Tj = 25°C VGE = 20V 13 VGE = 15V VGE = 15V
8

SATURATION VOLTAGE, VCE(sat), (VOLTS)

15
COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

12 Tj = 25°C Tj = 25°C
Tj = 125°C 7 Tj = 125°C
600 600
11

COLLECTOR-EMITTER
6
5
400 10 400
4

9 3
200 200
2
8
1
7
0 0 0
0 2 4 6 8 10 0 5 10 15 20 0 200 400 600 600
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 103 103
Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

IC = 800A Tj = 125°C

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8
102
Cies
COLLECTOR-EMITTER

IC = 400A
6
102 101
Coes
4 IC = 160A

100 Cres
2

Tj = 25°C VGE = 0V
0 101 10-1
6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS GATE CHARGE VS. VGE
(TYPICAL) (TYPICAL) (TYPICAL)
103 103 20
tf Irr IC = 400A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

trr
REVERSE RECOVERY, Irr (A), trr (ns)

td(off)
15
td(on) VCC = 400V
SWITCHING TIME, (ns)

102
VCC = 600V
102 10
tr
101 VCC = 600V VCC = 600V
VGE = ±15V VGE = ±15V 5
RG = 0.78Ω RG = 0.78Ω
Tj = 125°C Tj = 125°C
Inductive Load Inductive Load
100 101 0
101 102 103 101 102 103 0 500 1000 1500 2000 2500
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

4 12/11 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM400DU-24NFJ
Dual IGBTMOD™ NFJ-Series Module
400 Amperes/1200 Volts

TRANSIENT THERMAL HALF-BRIDGE SWITCHING HALF-BRIDGE SWITCHING

IMPEDANCE CHARACTERISTICS CHARACTERISTICS CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')

100 102 102

VCC = 600V VCC = 600V
VGE = ±15V VGE = ±15V
RG = 0.78Ω IC = 400A

SWITCHING ENERGY, (mJ/PULSE)

SWITCHING ENERGY, (mJ/PULSE)

Zth = Rth • (NORMALIZED VALUE)

Tj = 125°C Tj = 125°C
Inductive Load Inductive Load
10-1 Eon
Single Pulse
TC = 25°C Eoff
Per Unit Base = 101 Err 101
Rth(j-c) =
10-2 0.051°K/W
(IGBT)
Rth(j-c) = Eon
0.093°K/W Eoff
(FWDi) Err
10-3 100 100
10-5 10-4 10-3 10-2 10-1 100 101 101 102 103 10-1 100 101
COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω)
TIME, (s)
EMITTER CURRENT, IE, (AMPERES)

12/11 Rev. 1 5