Report On Input and Output Characteristics of CB Mode Amplifier

REPORT ON INPUT AND OUTPUT CHARACTERISTICS OF CB MODE
AMPLIFIER
AKASH SONY
MECHANICAL
13000718138
CONTENT
 COMMON BASE CONFIGURATION
 CURRENT FLOW IN COMMON BASE AMPLIFIER
 INPUT CHARACTERISTICS
 OUTPUT CHARACTERISTICS
 TRANSISTOR PARAMETERS
 REFRENCES
COMMON BASE CONFIGURATION
In common base configuration, emitter is the input
terminal, collector is the output terminal and the base
terminal is connected as a common terminal for both input
and output.
The input signal is
applied between the
emitter and base terminals
while the corresponding
output signal is taken
across the collector and
the base terminals.
The supply voltage between
base and emitter is
denoted by vbe while the
supply voltage between
collector and base is
denoted by vcb.
CURRENT FLOW IN COMMON BASE AMPLIFIER
The base-emitter junction JE is forward biased by the supply voltage
VBE while the collector-base junction JC is reverse biased by the
supply voltage VCB.
Due to the forward bias voltage VBE, the free electrons(majority

carriers) in the emitter region experience a repulsive force from the
negative terminal of the battery similarly (majority carriers) in the
base region experience a repulsive force from the positive terminal of
the .
As a result, free electrons start flowing from emitter to base

similarly holes start flowing from base to emitter. Thus free
electrons which are flowing from emitter to base and holes which are
flowing from base to emitter conducts electric current. The actual
current is carried by free electrons which are flowing from emitter to
base. However, we follow the conventional current direction which is
from base to emitter. Thus electric current is produced at the base
and emitter region.
IE=IB+IC
INPUT CHARACTERISTICS
The input characteristics describe the relationship
between input current (IE) and the input voltage (VBE).To
determine the input characteristics, the output voltage
VCB (collector-base voltage) is kept constant at zero
volts and the input voltage VBE is increased from zero
volts to different voltage levels. For each voltage level
of the input voltage (VBE), the input current (IE) is
recorded on a paper or in any other
form. A curve is then drawn between
input current IE and input voltage
VBE at constant output voltage VCB (0
volts). Next, the output voltage
(VCB) is increased from zero volts to
a certain voltage level (8 volts)
and kept constant at 8 volts. While
increasing the output voltage (VCB),
the input voltage (VBE) is kept
constant at zero volts. After we
kept the output voltage (VCB) constant at 8 volts, the
input voltage VBE is increased from zero volts to
different voltage levels. For each voltage level of the
input voltage (VBE), the input current (IE) is recorded on
a paper or in any other form. A curve is then drawn
between input current IE and input voltage VBE at constant
output voltage VCB (8 volts).This is repeated for higher
fixed values of the output voltage (VCB).When output
voltage (VCB) is at zero volts and emitter-base junction
JE is forward biased by the input voltage (VBE), the
emitter-base junction acts like a normal p-n junction
diode. So the input characteristics are same as the
forward characteristics of a normal pn junction diode. The
cut in voltage of a silicon transistor is 0.7 volts and
germanium transistor is 0.3 volts. In our case, it is a
silicon transistor. So from the above graph, we can see
that after 0.7 volts, a small increase in input voltage
(VBE) will rapidly increase the input current (IE).When the
output voltage (VCB) is increased from zero volts to a
certain voltage level (8 volts), the emitter current flow
will be increased which in turn reduces the depletion
region width at emitter-base junction. As a result, the
cut in voltage will be reduced. Therefore, the curves
shifted towards the left side for higher values of output
voltage VCB.
OUTPUT CHARACTERISTICS
The output characteristics describe the relationship between output
current (IC) and the output voltage (VCB).
To determine the output characteristics, the input current or emitter

current IE is kept constant at zero mA and the output voltage VCB is
increased from zero volts to different voltage levels. For each
voltage level of the output voltage VCB, the output current (IC) is
recorded. A curve is then drawn between output current IC and output
voltage VCB at constant input current IE (0 mA).
When the emitter current or input current IE is equal to 0 mA, the

transistor operates in the cut-off region. Next,
the input current (IE) is increased from 0 mA to
1 mA by adjusting the input voltage VBE and the
input current IE is kept constant at 1 mA. While
increasing the input current IE, the output
voltage VCB is kept constant.
After we kept the input current (IE) constant at

1 mA, the output voltage (VCB) is increased from
zero volts to different voltage levels. For each
voltage level of the output voltage (VCB), the
output current (IC) is recorded.
A curve is then drawn between output current IC and output voltage
VCB at constant input current IE (1 mA). This region is known as the
active region of a transistor.
This is repeated for higher fixed values of input current IE (I.e. 2

mA, 3 mA, 4 mA and so on).
From the above characteristics, we can see that for a constant input
current IE, when the output voltage VCB is increased, the output
current IC remains constant.
At saturation region, both emitter-base junction JE and collector-base

junction JC are forward biased. From the above graph, we can see that a
sudden increase in the collector current when the output voltage
VCB makes the collector-base junction JC forward biased.
TRANSISTOR PARAMETERS
Dynamic input resistance (ri)
Dynamic input resistance is defined as the ratio of change in input

voltage or emitter voltage (VBE) to the corresponding change in input
current or emitter current (IE), with the output voltage or collector
voltage (VCB) kept at constant.
The input resistance of common base amplifier is very low.
Dynamic output resistance (ro)
Dynamic output resistance is defined as the ratio of change in output

voltage or collector voltage
(VCB) to the corresponding change in output current or collector

current (IC), with the input current or emitter current (IE) kept at
constant.
The output resistance of common base amplifier is very high.
Current gain (α)
The current gain of a transistor in CB configuration is defined as the

ratio of output current or collector current (IC) to the input current
or emitter current (IE).
The current gain of a transistor in CB configuration is less than

unity. The typical current gain of a common base amplifier is 0.98.
REFERENCES
GOOGLE

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REPORT ON INPUT AND OUTPUT CHARACTERISTICS OF CB MODE

Due to the forward bias voltage VBE, the free electrons(majority

As a result, free electrons start flowing from emitter to base

To determine the output characteristics, the input current or emitter

When the emitter current or input current IE is equal to 0 mA, the

After we kept the input current (IE) constant at

This is repeated for higher fixed values of input current IE (I.e. 2

At saturation region, both emitter-base junction JE and collector-base

Dynamic input resistance is defined as the ratio of change in input

The input resistance of common base amplifier is very low.

Dynamic output resistance (ro)

Dynamic output resistance is defined as the ratio of change in output

(VCB) to the corresponding change in output current or collector

Current gain (α)

The current gain of a transistor in CB configuration is defined as the

The current gain of a transistor in CB configuration is less than

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