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    Rohini 15212013000

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    lungunorman166
    Rohini sector and the leaders

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    Rohini 15212013000

    Uploaded by

    lungunorman166
    9 views5 pages
    Rohini sector and the leaders

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    rohini_15212013000

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    Rohini sector and the leaders

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views5 pages

    Rohini 15212013000

    Uploaded by

    lungunorman166
    Rohini sector and the leaders

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    COLLEGE OF ENGINEERING AND TECHNOLOGY

    2.4 COMMON BASE CONFIGURATION


    In common base configuration, emitter is the input terminal, collector is the output
    terminal and base terminal is connected as a common terminal for both input and output.
    That means the emitter terminal and common base terminal are known as input terminals
    whereas the collector terminal and common base terminal are known as output terminals.
    In common base configuration, the base terminal is grounded so the common base
    configuration is also known as grounded base configuration. Sometimes common base
    configuration is referred to as common base amplifier, CB amplifier, or CB configuration.

    Fig:2.4.1 Common Base Configuration of NPN Transistor


    The input signal is applied between the emitter and base terminals while the
    corresponding output signal is taken across the collector and base terminals. Thus the
    base terminal of a transistor is common for both input and output terminals and hence it
    is named as common base configuration.
    The supply voltage between base and emitter is denoted by VBE while the supply
    voltage between collector and base is denoted by VCB.
    In every configuration, the base-emitter junction JE is always forward biased and
    collector-base junction JC is always reverse biased. Therefore, in common base
    configuration, the base-emitter junction JE is forward biased and collector-base junction
    JC is reverse biased.

    EC8252-ELECTRONIC DEVICES
    COLLEGE OF ENGINEERING AND TECHNOLOGY

    Input characteristics
    The input characteristics describe the relationship between input current (IE) and
    the input voltage (VBE).
    First, draw a vertical line and horizontal line. The vertical line represents y-axis
    and horizontal line represents x-axis. The input current or emitter current (IE) is taken
    along the y-axis (vertical line) and the input voltage (VBE) is taken along the x-axis
    (horizontal line).

    Fig:2.4.2 Input characteristics of Common Base Configuration


    To determine the input characteristics, the output voltage VCB (collector-base
    voltage) is kept constant at zero volts and the input voltage VBE is increased from zero
    volts to different voltage levels. For each voltage level of the input voltage (VBE), the
    input current (IE) is recorded on a paper or in any other form.
    A curve is then drawn between input current IE and input voltage VBE at constant output
    voltage VCB (0 volts).
    The output voltage (VCB) is increased from zero volts to a certain voltage level (8
    volts) and kept constant at 8 volts. While increasing the output voltage (VCB), the input
    voltage (VBE) is kept constant at zero volts. After kept the output voltage (VCB) constant
    at 8 volts, the input voltage VBE is increased from zero volts to different voltage levels.
    For each voltage level of the input voltage (VBE), the input current (IE) is recorded on a
    paper or in any other form.

    EC8252-ELECTRONIC DEVICES
    COLLEGE OF ENGINEERING AND TECHNOLOGY

    A curve is then drawn between input current IE and input voltage VBE at constant output
    voltage VCB (8 volts).
    This is repeated for higher fixed values of the output voltage (VCB).
    When output voltage (VCB) is at zero volts and emitter-base junction JE is forward
    biased by the input voltage (VBE), the emitter-base junction acts like a normal p-n
    junction diode. So the input characteristics are same as the forward characteristics of a
    normal pn junction diode.
    The cut in voltage of a silicon transistor is 0.7 volts and germanium transistor is
    0.3 volts. In our case, it is a silicon transistor. So from the above graph, can see that after
    0.7 volts, a small increase in input voltage (VBE) will rapidly increase the input current
    (IE).
    When the output voltage (VCB) is increased from zero volts to a certain voltage
    level (8 volts), the emitter current flow will be increased which in turn reduces the
    depletion region width at emitter-base junction. As a result, the cut in voltage will be
    reduced. Therefore, the curves shifted towards the left side for higher values of output
    voltage VCB.
    Output characteristics
    The output characteristics describe the relationship between output current (IC)
    and the output voltage (VCB).
    First, draw a vertical line and a horizontal line. The vertical line represents y-axis
    and horizontal line represents x-axis. The output current or collector current (IC) is taken
    along the y-axis (vertical line) and the output voltage (VCB) is taken along the x-axis
    (horizontal line).
    To determine the output characteristics, the input current or emitter current IE is
    kept constant at zero mA and the output voltage VCB is increased from zero volts to
    different voltage levels. For each voltage level of the output voltage VCB, the output
    current (IC) is recorded.
    A curve is then drawn between output current IC and output voltage VCB at
    constant input current IE (0 mA).
    When the emitter current or input current IE is equal to 0 mA, the transistor
    operates in the cut-off region.

    EC8252-ELECTRONIC DEVICES
    COLLEGE OF ENGINEERING AND TECHNOLOGY

    Fig:2.4.3 Output characteristics of Common Base Configuration


    Next, the input current (IE) is increased from 0 mA to 1 mA by adjusting the input
    voltage VBE and the input current IE is kept constant at 1 mA. While increasing the input
    current IE, the output voltage VCB is kept constant.
    After kept the input current (IE) constant at 1 mA, the output voltage (VCB) is increased
    from zero volts to different voltage levels. For each voltage level of the output voltage
    (VCB), the output current (IC) is recorded.
    A curve is then drawn between output current IC and output voltage VCB at
    constant input current IE (1 mA). This region is known as the active region of a transistor.
    This is repeated for higher fixed values of input current IE (I.e. 2 mA, 3 mA, 4 mA
    and so on).
    From the above characteristics, can see that for a constant input current IE, when
    the output voltage VCB is increased, the output current IC remains constant.
    At saturation region, both emitter-base junction JE and collector-base junction JCare
    forward biased. From the above graph, can see that a sudden increase in the collector
    current when the output voltage VCB makes the collector-base junction JC forward
    biased.
    Early effect
    Due to forward bias, the base-emitter junction JE acts as a forward biased diode
    and due to reverse bias, the collector-base junction JC acts as a reverse biased diode.
    Therefore, the width of the depletion region at the base-emitter junction JE is very small
    whereas the width of the depletion region at the collector-base junction JC is very large.

    EC8252-ELECTRONIC DEVICES
    COLLEGE OF ENGINEERING AND TECHNOLOGY

    If the output voltage VCB applied to the collector-base junction JC is further


    increased, the depletion region width further increases. The base region is lightly doped
    as compared to the collector region. So the depletion region penetrates more into the base
    region and less into the collector region. As a result, the width of the base region
    decreases. This dependency of base width on the output voltage (VCB) is known as an
    early effect.
    If the output voltage VCB applied to the collector-base junction JC is highly
    increased, the base width may be reduced to zero and causes a voltage breakdown in the
    transistor. This phenomenon is known as punch through.
    Transistor parameters
    Dynamic input resistance (ri)
    Dynamic input resistance is defined as the ratio of change in input voltage or
    emitter voltage (VBE) to the corresponding change in input current or emitter current
    (IE), with the output voltage or collector voltage (VCB) kept at constant.

    The input resistance of common base amplifier is very low.


    Dynamic output resistance (ro)
    Dynamic output resistance is defined as the ratio of change in output voltage or
    collector voltage (VCB) to the corresponding change in output current or collector current
    (IC), with the input current or emitter current (IE) kept at constant.

    The output resistance of common base amplifier is very high.


    Current gain (α)
    The current gain of a transistor in CB configuration is defined as the ratio of output
    current or collector current (IC) to the input current or emitter current (IE).

    The current gain of a transistor in CB configuration is less than unity. The typical current
    gain of a common base amplifier is 0.98.

    EC8252-ELECTRONIC DEVICES

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