SSD 2

BJT All about Electronics
BJT is a 3 terminal semiconductor device which can act as a insulator or conductor based on the
applied input signal. Thus, a transistor can act as a switch or a amplifier,
Function of the Emitter is to supply electron
Directions are showing when the transistor is in active region
Emitter terminal is common in the input and output side

n-p-n
Here double subscription is used for base and collector voltages ( VBB,VCC) cause common
emitter connection where base acts as input and collector as output.
VBE determines / says the voltage difference between the emitter and base terminal= VB - VE
where VB, VC is measured with respect to the ground terminal. VEB = -VBE, same for VCE
So, we know for the active region of BJT the Base-Emitter junction is forward biased & the
Base-Collector junction is reverse biased. So, the VBE & VCE will be positive.
Voltage drop is 0.7V to overcome the bias voltage in E-B junction
Then from the Emitter the electron start moving towards base & then there is 2path (towards the
positive terminal of VBB and the collector region). Electrons become the minority charge carrier
& as the B-C junction is reverse biased & because of appeared current field most of the electron
will flow towards the collector region.
So the flow of holes or current is opposite to the flow of electrons.

If IB ↑ then IC ↑
So, by controlling the input current we can control the output current,
Thus, BJT device are called the current controlled device.
Here we can amplify the input signal by putting resister between the emitter and collector
terminal.
Common Emitter configuration is the commonly used configuration for BJT
The input is applied between the base & emitter terminal and the output is taken from the
collector and emitter terminal
where base-emitter junction is in forward bias
same
VBE = Voltage on the input side & VCE = Voltage on the output side
The graph shows kind of p-n junction forward bias curve and from above we can see that base-
emitter junction is in forward bias. Again, as the VCE increases the base current IB reduces.
VCE = VCB + VBE, If VBE is constant then as VCE ↑, VCB ↑
And so, the reverse bias voltage will also be ↑ & the depletion layer will get increased.
So the effective base width (mane base er actually joto width tar theke kome jabe, fole Ib o kome
jabe, then eto electron koi jabe? Of course, collector e jabe)
So, VCE ↑ = IB ↓
Output Characteristics
For active region,
As before VCE ↑ = IB ↓ = IC ↑
BJT as an amplifier transistor should always be in active region
Bita is treated as the current gain for the Common Emitter combination
This is the region in which transistor tends to behave as a closed switch. The transistor has the
effect of its collector and Emitter being shorted. The collector and Emitter currents are maximum
in this mode of operation. The figure below shows a transistor working in saturation region.
When
Base current Ib is 0 then its in cutoff region though Ic is not 0
Leakage current is following through the collector to emitter terminal when the base terminal is
open.
That’s why there is a large leakage current in the cutoff region

For AC signal the collector terminal gets grounded
Its complicated when its AC
cause here, the input signal is measured between the base and collector terminal & the output is
measured between the collector & emitter
Simply equivalent circuit
Now lets back to the DC
He output characteristics are quite similar to the common emitter configuration

Same before just now the fixed value is VCB
Now here is a fact that, here I am increasing the Voltage Vbse so more and more electrons are
being emitted from emitter, as a result Ib will increase.
Here is the graphical example
ß
So as a common collector configuration, the output current is Ie and the input current is Ib so the
ration of Ie and Ib is known as (gama, Γ , looking wired though) the current gain of common
collector configuration.
Relation between α, ß, Γ
Γ=
Here Common collector configuration provides very high input impedance and very low output
impedance, very high current gain, very low voltage gain
This configuration gains low power gain.
Chapter 4
What is Q point/bias point/quiescent point & load line?
BJT won’t amplify the input signal until we apply the DC power supply. Actually, the energy
needed to amplify the input signal also comes from the DC power supply.
The process of applying the DC voltage source to the BJT is known as the biasing.
Q is called the operating point because it tells us the operating voltage and current of the
transistor.
The operating point of a device, also known as bias point, quiescent point, or Q-point, is the
point on the output characteristics that shows the DC collector–emitter voltage (Vce) and the
collector current (Ic) with no input signal applied.
Stability Factor = Change in the operating point with change in the temperature.
Fixed bias configuration means when the IB (base current) is fixed / constant. So, the operating
point should also be constant. But as we know the operating point may change for other reasons.
Like change in temperature / change in VCE / RCB / RCE. We will discuss about it the way
forwards.
Fixed Bias
Redrawn:
For DC analysis
The capacitors will become open circuited because DC never passes through capacitor
Whenever the collector current is max, then the voltage VCE must be 0
and, VCE will be max when IC is 0 and so VCE (max) = VCC
Now look at the graph, that’s why IC max is denoted by VCC / RC and the VCE max is denoted by
VCC.
Now connect them by a line which Is known as load line which shows the possible values of the
operating point. The operating point will change if we change the value of RB, if RB is decreased
and so the value of IB will increased, see the graph at top. As a result, the operating point will
shift to the left.
How is the operating point is determined?
 By putting the value of current VCE & IC
Again, if the value of RC is changed then the operating point will change in this way.
And same for the voltage VCC

As temperature changes the value of ß will also change. If we change the transistor then value of
ß will also change. Thus, the operating point will also change.
How? See video
Time 11.45 Link: https://www.youtube.com/watch?
v=5T84Jzcgj7M&list=PLwjK_iyK4LLDoFG8FeiKAr3IStRkPSxqq&index=5&t=531s
Video 6
We can improve the performance of this fixed bias configuration by attaching a transistor in
series with emitter.
For change in ß due to temperature change, the value of IB & IC will change, as well as the IE will
also change. If ß increases ↑ then IE will also increase, as a result the voltage drop at the RE
(emitter resister) will also be increase, as the voltage drops increases
The way feedback controls the bias point is as follows
https://en.wikipedia.org/wiki/Bipolar_transistor_biasing
Now for the input side:
For output side
Example
so when Rb is less then ß will be cancelled out by ß+1 and Ic will be independent of ß
Its also known as the emitter stabilized biasing condition as by introducing the emitter register
the circuit tries to maintain the q point.
When RB = 0
In this configuration the collector current IC is almost independent of the value of ß.
Two supply / Dual Supply Bias Configuration
Here VE is negative by keeping RB = 0
As Ic = Ie then Ic is independent of ß
How small the value of Rb should be so that the operating point is almost independent of the
variation in ß?
Applying kvl
Last one in IB
If this statement is satisfied then the operating point will be stable against the variation of ß
BJT as switch
When BJT is at the cut-off region / saturation region the BJT acts as a switch.
When VBB is 0 or less than VBE then IB =0 (only for cut off region)
As IC = ß IB
So IC is also 0 (approax), so there will be no voltage drop and at the terminal (as in the pic) then voltage is
still VCC
So, at then the BJT will be in the cutoff region,

As in both active and saturation region the value of VBB is non-zero. So, how can we identify the
saturation region. Actually at saturation region the value of V CE is low. Sometimes 0.1 to 0.2V
Now we will assume that the VCE is 0V. So, at that time collector current is maximum.
So then saturation / maximum IC current will flow through the terminal
If we measure the current IC in active region and saturation region then obviously the collector current
measured in the saturation region will be high, cause saturation region is named after when the collector
current in flowing at its highest rate in BJT.
How to find the saturation in BJT
Steps:
»VCE is 0 , then measure the saturated IC current.
» then measure the IB
»as we know for active region IC = ß IB , so now lets measure the IC by multiplying ß with IB
Now both IC will be measured if this IC is greater then the VCE =0 saturated current IC then it’s the
saturation region
So BJT is in the saturation region.

Again when the BJT is in the saturation region the value of ß will reduce
We can determine it by the ration of IC and IB
Go to 8min to find the hard saturation of BJT
When the input is 0 V the transistor will act in cut off region
But due to reverse saturaion current the resistance will be very high
Now tranasistor in saturation region is

So now the value of resistance is 0
So in saturaion region the transistor acts as a short circuit and as a open circuit in cuut off region
Voltage Divider Bias

But for DC analysis
Here base current IB is approximately 0

So almost all current will flow through R1 & R2
Applying voltage divider rule
Equivalent circuit: for better understanding see lecture 8
Ic is almost = to Ie
Approximate Analysis
Circuit can be redrawn like this

Can also be redraen like this
Looking from this side Thevenin’s equivalent circuit
Now lets find the Thevenin’s equivalent circuit
Thevenin’s equivalent resistance
Thevenin’s Equivalent Voltage
So the equivalent circuit

Applying kvl,
So operating parameters of exact analysis

Solving the upward 3rd equation we get
If the 1st term is very small it will be like the approaximate analysis
In voltage bias configuration how the operating point changes if there is a variation in ß
Lets find Thevenin voltage
Thevenin circuit

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BJT All about Electronics

Emitter terminal is common in the input and output side

So the flow of holes or current is opposite to the flow of electrons.

That’s why there is a large leakage current in the cutoff region

He output characteristics are quite similar to the common emitter configuration

And same for the voltage VCC

So, at then the BJT will be in the cutoff region,

So BJT is in the saturation region.

Now tranasistor in saturation region is

Voltage Divider Bias

Here base current IB is approximately 0

Circuit can be redrawn like this

Thevenin’s Equivalent Voltage

So the equivalent circuit

So operating parameters of exact analysis

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