ECE 271 BJT & FET Transistors

Introduction to the BJT and FET Transistors

Purpose
Demonstrate the DC currents and voltages that make the BJT work. Investigate its three normal
operating modes - cutoff, active forward and saturated. See just why we use an FET as an ON / OFF
switch for electronic devices.

Equipment Required
1 – Analog Discovery 2 – 100Ω 5% ¼ W Resistor
1 – Proto-board 1 – 1.0KΩ 5% ¼ W Resistor
1 – 2N3904 NPN Bipolar Junction Transistor 1 – 10KΩ 5% ¼ W Resistor
1 – TN0602 (SiDO 0223) NMOS Field Effect Transistor 1 – 100KΩ 5% ¼ W Resistor
1 – LED

Instructional Objectives
5.1 Be able to determine the operating mode of a BJT or FET transistor.
5.2 Be able to determine the β of a BJT in a given circuit.
5.3 Measure the AC gain of a simple BJT common collector amplifier.
5.4 Measure when an FET turns on.
5.5 Measure the on resistance of an FET.

Background
This is the Transistor lab. You are going to discover how the bipolar junction, BJT, and the field
effect, FET, transistors deal with well-behaved electrons. As you probably know the BJT and FET are
3 terminal semiconductor devices commonly used to amplify an AC signal or turn something on and
off like a relay or LED. These devices are usually controlled by a low power signal connected to one
terminal, the base or gate. This control signal influences the power that flows through the other 2
terminals of the device, collector and emitter of the BJT or the drain and source of the FET. The
operating transistors have DC and AC properties. Mostly the DC properties will be explored in this
lab. A few AC properties are covered also. The rest are covered in ECE306 lab.
Here we will investigate the basic DC properties of the transistor in all modes or regions of
operation. To review there are 4 or 5 modes of operation. For the BJT they are cutoff, active forward,
active reverse, saturation and “burnt out”. For the FET they are cutoff, triode, saturation and “burnt
out”. We won’t review ECE340 here but a few words about the BJT and FET will remind you of what
to expect from the devices.

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ECE 271 BJT & FET Transistors

The Bipolar Junction Transistor:

The lab will use an NPN transistor, 2N3904, and the following discussion pertains to the NPN
device. The complementary PNP device has similar controlling equations with changes in the polarity
of the relevant voltages. We won’t worry about them this time. There is a simple model to represent
the NPN BJT. Maybe that’s too many TLA’s. Sorry. The simple model we like to use for DC analysis
is given in table 1. This lab will allow you to evaluate how well this model works. Usually a small
amount of current into the base results in a larger amount entering the collector and exiting the
emitter of an NPN device. The base voltage or more precisely the voltage at the base with respect to
the emitter, VBE, directly determines if the transistor is on. VBE indirectly controls which mode the
device is in and how it controls those indigent electrons. The voltage from collector to

NPN Complex Model: The collector current is an exponential

IC RC function of the base to emitter voltage.
VBE
IB VBC VT
C IC = ISe
B
VCE IS is a “constant” that depends on temperature
RB and physical dimensions of the silicon. And VT = kTq ,
VBE E
where T is degrees Kelvin, k is Boltzmanns constant
β=N IE RE and q is the magnitude of electronic charge. VT is about
25mV at 20 °C.
Convenient simple model
Cutoff Region: Active Forward to Saturation Transition:
IB = 0 VBE ≤ 0.5 V IB = VRB / RB VBE = 0.7 V
IC = 0 VBC ≤ 0 V IC = βFIB VBC = 0.4-0.5 V
IE = 0 VCE > 0 IE = IB + IC VCE = 0.3-0.2 V

Active Forward Region: Saturation Region:

IB = VRB / RB VBE = 0.7 V IB = VRB / RB VBE = 0.7 V
IC = βFIB VBC ≤ 0.4 V IC = VRC / RC VBC = 0.5 V
IE = IB + IC VCE ≥ 0.3 V IE = IB + IC VCE = 0.2 V
β = IC / IB
Active Reverse Region same as active forward except the C and E terminals are reversed. This
makes β or βR as it is referred to less than 1.
Table 1.

emitter, VCE, is a great indicator in which mode the transistor is operating. Check table 1.
The typical uses for a transistor are as a switch or an AC amplifier. In order to use a BJT as a
switch you must change the mode from cutoff to saturation to cutoff and so on, as you turn the switch
from off to on to off etc. The modes are achieved by changing the VBE from < 0.5 V to a VBE high
enough saturate the base region with electrons which then causes the collector to come within 0.2 V
of the emitter. Another way to say this is to go from IB = 0 to IB great enough to saturate the base
region of the transistor. Note that saturation can occurs at many currents as long as VCE ≤ 0.2 V the
transistor is in saturation. This is usually all we care about with a switch except for the turn on and
turn off characteristics which we won’t look at here.

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ECE 271 BJT & FET Transistors

In order to use a BJT as an amplifier it must be DC “biased” in the active forward mode. Biased
here means that VBE is set to a voltage such that the current through the collector keeps VCE ≥ 0.3 V
and < VCC, the supply voltage. An alternate way to say this is to have IB set so the current through
the resistor in series with the collector, RC, keeps VCE ≥ 0.3 V and < VCC. For the circuit in Fig.5 we
would like to have VCE somewhere midway between VCC and VE. This is so VO can move up and
down from the DC bias value when there actually is an AC signal applied to the circuit. Please note
that the AC portion of the circuit is missing from Fig. 5.
4V An example is in order here. Set RC to 1KΩ. To get
VO = 2.0V we need 2.0mA flowing through it. If the β = 100
then IB would have to be 2.0mA/100 = 20.0uA. Our simple
RC
1.00K model says that VBE = 0.7V when in active forward mode.
There is VBB - 0.7V across RB. Finally we can pick RB and
determine VBB to give 20.0uA or pick VBB and determine RB
Vout to give 20.0uA. I pick VBB = 2.0V for convenience. This
RB 68K + results in RBB = 1.3V / 20.0uA = 65.0KΩ. Too bad we can’t
Vce
+ buy that value. OK, great, we’re done right? Only if the
VBB
Vbe - - Q1 simple model
2N3904 works well enough. You will find that out. Please note we will
not explore the active reverse mode in this lab, not on
purpose anyway.
GND GND
Some students have been known to plug the transistor in
backwards which reverses the emitter and collector and results in active reverse mode.
Figure 5
In the pre-lab you ran a transistor in cutoff and active forward mode. You will do the same thing
in this lab in a common collector configuration, Fig.5, instead of the common emitter configuration
used in the pre-lab. The pre-lab showed how to measure the β of the transistor using the common
emitter configuration. You will do that in this lab to measure β for your particular transistor. In the pre-
lab you plotted the VBE and emitter current. You should have seen that it only took a small change in
VBE to make a large change in emitter current. You will also measure that in this lab.

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ECE 271 BJT & FET Transistors

The FET:
Unfortunately there is no simple model to use for the FET. We have to use the real equations
for these devices which tend to depend on the device physical properties. Before we get into that let
me tell you that the saturation mode of an FET does not behave the same as the saturation mode of
the BJT. Same name different behavior. As a matter of fact the FET is usually in the saturation mode
when it is used as an AC amplifier as opposed to the active forward mode that the BJT is in when it is
used as an amplifier. The FET can also be used as a switch like the BJT. The device must go from
cutoff to triode and back to cutoff mode for the switch to go from off to on to off again. By the way the
term triode comes from the vacuum tube days. This lab will use an N channel enhancement mode
MOSFET, TN0602. The following discussion pertains to this type of device. As with the BJT there is
a complementary P channel device that acts in a similar manner to the N channel device with
different polarities on the relevant voltages. Another variety of device is an N or P channel device
which operates in the depletion mode. These devices are becoming very scarce and we won’t worry
about them in this lab.
The N channel MOSFET or NMOS FET for short, shown in Fig. 6, has a basic set of equations
to determine which mode it is in. They are in table 2:

MODE Relevant Conditions Drain Current

Cutoff VGS < VT ID = 0
Triode VGS ≥ VT and VDS ≤ VGS – Vt
' W
[ 2
ID = k n L (VGS − Vt )VDS − 21 VDS ]
Saturation VGS ≥ VT and VDS ≥ VGS – Vt ID = 12 k 'n W
L
(VGS − Vt )2
Table 2

The device is OFF when VGS < VT. VT is device dependent and is usually between 0.5V and
5V. The device turns ON when VGS ≥ VT. Once ON the device mode depends on the voltages at the
drain and gate. The transition between triode and saturation mode is when VDS = VGS – VT.
Remember the FET is used as an amplifier in saturation mode. This is when VDS ≥ VGS – Vt. For
example when VS = 0V, VD = 5V and the VG = 2V with VT = 1V the FET is in saturation mode as given
by the equations in table 2.
That is a nasty equation for saturation mode. k 'n and WL are device dependent and are rarely
given to you. Usually you must make sure the device is in saturation mode, measure ID and VGS and
back calculate a lump constant for k 'n WL . VT is often given as a range of voltages in the data sheet.
For example 1V to 4V at a certain ID which is usually somewhere around 1/500 to 1/1000 of IDMAX.
What is IDMAX? It is the maximum allowable current that can pass through the drain. To find out the
real value you need to check the data sheet for the FET. It is on the Ecow2 ECE271 website for the
TN0602.

Figure 6.

Figure 7. Figure 8.
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ECE 271 BJT & FET Transistors

VT must also be measured to determine an accurate lump constant k 'n W

L . Usually VT is measured by
connecting the gate to the drain, as shown in Fig.7. Then setting VDD to a voltage that results in a
small ID as mentioned above, about 1mA for a small device like the TN0602. VT is then equal to VGS.
Careful examination of the saturation conditions reveals that when the FET gate and drain are tied
together, as in Fig.7, and the device is turned on the FET is guaranteed to be in the saturation mode.
After measuring VT just crank up the voltage, VDD, until ID is a significant fraction of IDMAX. Measure ID
and VGS. These values and VT allow the constant, k 'n WL , to be determined. I measured VT= 2.125V at
ID = 1mA and k 'n W
= 0.164 at ID = 12.5mA for a TN0602 I had laying around.
L

The equation for triode mode is also nasty. Remember that triode mode is usually used to turn
something on as in the circuit shown in Fig. 8. It may not be obvious from this circuit but you want the
voltage drop across the FET to be as small as possible when the relay is switched on. Usually when
you turn something off you want the switching element, FET, to have infinite impedance. Cutoff mode
is great for that. When you turn something on you want the switch to have 0 impedance. This is so
the device being turned on gets all of the power and no power is wasted or dissipated in the FET.
That means you want the equivalent resistance from the drain to source, rDSON, to be small compared
to load resistance. The equivalent resistance, rDSON, is measured as VDS/IDS. Fortunately the FET has
a low rDS in triode mode. This is why triode and cutoff mode are used to turn things on and off. VDS is
intentionally kept very small when an FET is used as a switch. This makes sense because device
power dissipation is IDSVDS. IDS is usually fixed at a high value for the device you are turning on. So to
keep power dissipation low with high IDS, VDS has to be low. Low VDS over high IDS yields a small rDS.
Low VDS is very fortunate from an equation point of view. The equation for triode ID simplifies to:

ID = k n' W
L
(VGS − Vt )VDS (1)

1 2
because 2
VDS is small compared to (VGS-VT)VDS and can be ignored.
Procedure

Parts: 2N3904, TN0602 (SiDO 0223), 2-100Ω, 1-1KΩ, 1-100KΩ and 1-LED
We are going to measure the β and VBE that yields 2.0mA of collector current like in the
simulation for the 2N3904.
We will make a simple BJT AC amplifier based on 2.0mA of bias current.
We will make an on off switch with the BJT.
We will measure the VGS that turns on the FET.
We will make a simple FET AC amplifier based on 2.0mA of bias current.
We will make an on off switch with the FET
We will measure the FET resistance when it is on

Caution
The transistor, like any semiconductor device, can be destroyed by over-current, over-voltage or static discharge. Over-
current conditions are usually due to a wiring error. Over-voltage occurs when the power supply voltage exceeds the
voltage rating for the device. These conditions can be avoided by ensuring you are using the proper device, and double-
checking the circuit layout to catch — and correct — wiring errors. In the laboratory, damage from static discharge is often
controlled by the use of grounded anti-static mats on the floor and the work surface. Manufacturers of static-sensitive
devices recommend the use of a grounded wrist strap when working on sensitive electronics. You can help avoid damage
from static discharge by touching an earth ground before picking up a semiconductor device. Earth grounds are available
throughout the lab, in the form of any metal case on a grounded instrument. Some power supplies provide a ground lug
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ECE 271 BJT & FET Transistors

(or jack) separate from the negative side of the supply. The ground lug provides a good quality connection to earth ground
through the third wire (round pin) on the AC power cord. Touching the metal portion of this ground lug will discharge any
static electricity you have accumulated, and significantly reduce the likelihood of damaging static-sensitive components.

1. Build the common emitter amplifier circuit shown in Fig. 9. on a proto-board.

• Use the Arbitrary Waveform generator.
• Start with AWG1 to 1.0VP Triangle with 1.0 VDC offset.
• Set AWG2 to 4.0VDC.
AWG2
4.0V A2
A2+ Vrc
RC V1 Q
A2-
1.00K V2
SUBV
GND

RB 100.0K
Q1
+ 2N3904
AWG1
A1 Vbe
Vbe
Q V1
A1+ -
A1-
V2
SUBV
GND GND

Figure 9: Common emitter configuration

• Note: For IC Just divide the VRC by 1000 or read the Volts as mA.

2. Optimize the scope Display

• Adjust the scope display to show VBE, C1, as
large as possible but still completely on screen.
• Do the same for C2 to show VRC (IC).
• You may need to adjust the DC offsets of the
C1 and C2 traces.

3. Measure VBE when IC = 2.0mA of bias current.

You might need more voltage on AWG1 to get 2.0mA
of current through the collector.

• On the scope display use the cursors to

determine the point on the curve that shows 2.0mA
(2.0V/1.00K) and read the VBE_2.0mA __________.
• Change the display mode to X-Y. You now have VBE on the X axis and IC (VRC) on the Y axis.

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ECE 271 BJT & FET Transistors

4. Determine the DC input voltage which results in 2.0mA IC.

• Move the A1+ Input from the Base to the other side of RB.(at AWG1.)
• Use Y-T mode and rescale the inputs if necessary.
• Determine the value of the triangle voltage that gives 2.0mA collector current.
VTRI_2.0mA_IC ____V.
• Test this voltage by changing the AWG1 source to DC set to VTRI_2.0mA_IC.
• Tweak AWG1 if 1.95mA > IE > 2.05mA. I didn’t have to tweak mine.
• Remember to change triggering to ‘none’ or Auto for DC measurements.
Tweaked_VDC_IC@2.0mA ________________ .
IC@ Tweaked_VDC_IC@2.0mA ________________ .

5. Determine the β of the transistor @IC = 2.0mA bias current.

• Change AWG1 back to the 1.0VP, 1V offset triangle wave.
• Move A1- to the base to measure the voltage across RB.
• Determine the current gain, β, for 2.0mA of collector current.

VRB _______. RB ________ IC ________ IB ________ IC/IB = β2.0mA ________.

AWG2
4.0V A2
A2+ Vrc
RC V1 Q
A2-
1.00K V2
SUBV
GND

RB 100.0K
Q1
+ 2N3904
AWG1
A1 Vbe
Vrb
Q V1
A1+ -
A1-
V2
SUBV
GND GND

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ECE 271 BJT & FET Transistors

Notice that the Base current goes negative in this setup. This is what should have happened in the
simulation.

6. Measure the gain, A, of the common emitter amplifier.

• Connect A1 and A2 as shown in Fig. 10

AWG2
4.0V A2
A2+ Vout
RC V1 Q
A2-
1.00K V2
SUBV
GND

RB 100.0K
Q1
A1 2N3904
Vin A1+
Q V1
A1- AWG1
V2
SUBV

GND GND

Figure 10: Common emitter transistor amplifier.

• Set AWG1 to a 0.5V 1KHz Sine wave with a DC offset equal to Tweaked_VDC_IC@2.0mA
• Measure VIN and VOUT AC (Peak-Peak) and DC (Average) and determine the AC gain of this
circuit. Record the DC offset of VIN and VOUT.

VIN_DC ________, VOUT_DC ________. VIN_AC _______, VOUT_AC_______, Gain_AC ________.

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ECE 271 BJT & FET Transistors

A2
D1 RED LED
AWG2 A2+ VRC
RC V1 Q
4.0V A2-
100 V2
SUBV

GND
RB 10.0K
Q1
2N3904
A1
AWG1 VBE A1+
Q V1
A1-
V2
SUBV

GND GND GND

Figure 11: Saturation Mode test circuit.

7. Saturation Mode Experiment.

• Build the circuit shown in Fig 11. It is similar in
configuration to the common emitter amp with a
different RC, RB and an added LED.
• I suggest you measure DC using the Multi-
meter. All measurements will be of DC voltages. You
can also use the scope.
• Set AWG1 to 4.0VDC (VIN).
• Set AWG2 to 4.0VDC (VSUPPLY).
• The LED should be lit.
• Measure VBE,VCE, VRC. Measure AWG1 and
AWG2 with the meter or scope.

VBE _________ VCE ___________ VRC _________ AWG1 _________ AWG2 ________.

8. Turn off the LED.

• Set AWG1 to 0 V.
• Measure VBE,VCE, VRC, AWG1 and AWG2.

VBE _________ VCE ___________ VRC _________ AWG1 _________ AWG2 ________.

9. Turn on and off an LED.

• Set AWG1 to a 4.0VPP square wave at 1Hz with a 2.0 VOFFSET.
• If the LED is blinking you succeeded. If not find out what is wrong and fix it.

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ECE 271 BJT & FET Transistors

FET time.
10. Determine VT for the TN0602.
• When does the FET turn on? Practically speaking at about 1/1000 IDMAX the FET is considered
“ON”. Usually the data sheet gives the turn-on threshold voltage @ a given drain current.
• Look up IDMAX and VT@ID in the data sheet.
From data sheet VT ___________V @ID ____________mA, ID(ON)MIN ________ A.
• Build the circuit shown in Fig. 12.

AWG2 A2
A2+ VRD
RD V1 Q
A2-
1.00K V2
SUBV
GND

A1
VGS A1+ Q1
Q V1
A1- TN0602
V2
SUBV

GND GND
Figure 12. VT test circuit.
• Measure VT for the ID value from the data sheet. VT is VGS for the test circuit. I recommend you
use the multi-meter to measure VRD and VGS.
• Desired VRD from ID spec _____________V @ ID ____________ mA.
• Measured VT __________________ @ID ___________________.

11. Find the VGS which yields 2.0mA of drain current.

• Build the circuit shown in Fig.13.

AWG2
4.0V A2
A2+ VRD
V1 Q
RD A2-
V2
1.00K
SUBV
GND

RG 100
Q1
TN0602

AWG1 R1 A1
100.0K VGS A1+
Q V1
A1-
V2
SUBV
GND GND
GND
Figure 13: Common source amplifier.

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ECE 271 BJT & FET Transistors

• Don’t forget R1. It pulls the input down to 0V when there is no input. The input will drift up and
cause a lot of drain current to flow when there is no input source.
• Adjust VGS using AWG1 (DC) until 1.9mA < ID < 2.1 mA.

VGS@2.0mAID ___________V @ ID ____________ mA.

12. Determine the AC gain of the common source amplifier with 2.0mA of bias current.
• Set AWG1 to 0.02VPP sine wave at 1.00KHz with an offset of VGS@2.0mAID.
• Measure AWG1 with A1 and VRD with A2.
• Set C1 to 200mV/DIV.
• I recommend triggering on C2 and click the ‘Set to 50%’ button.

VRDDC __________, VRDAC __________, AWG1DC __________, AWG1AC __________.

• AWG1 should be close to 20mV.

• Calculate the AC gain. A2.0mAID _______________.
• Change AWG1 to 0.1VPP sine wave at 1.00KHz with the same offset.
• Measure the gain of this ‘amplifier’. A __________.
• Capture the scope image of VGS and VRD.

13. Triode Mode Switch Experiment.

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ECE 271 BJT & FET Transistors

• Build the circuit in Fig. 16. This should be the same circuit you have on your proto board with
RD changed from 1.00K to 100Ω and an LED added.
• I suggest you measure using the Multi-meter. All measurements will be of DC voltages. You
can also use the scope.
• Set AWG1 to 4.0VDC (VIN).
• Set AWG2 to 4.0VDC (VSUPPLY).
• The LED should be lit.
• Measure VGS,VDS, VRD, AWG1 and AWG2.

VGS _________ VDS ___________ VRD _________ AWG1 _________ AWG2 ________.

AWG2 A2
D1 LED3
4.0V A2+ VRD
RC V1 Q
A2-
100 V2
SUBV

GND
RG 100
Q1
TN0602
A1
AWG1 VGS A1+
Q V1
R1 A1-
V2
100.0K
SUBV

GND GND GND

Figure 16: Triode mode test circuit.

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ECE 271 BJT & FET Transistors

14. Turn off the LED.

• Set AWG1 to 0 V.
• Measure VGS, VDS, VRD, AWG1 and AWG2.

VGS _________ VDS ___________ VRD _________ AWG1 _________ AWG2 ________.

15. Turn on and off an LED.

• Set AWG1 to a 2.0VP square wave at 1Hz with a 2.0 VOFFSET.
• If the LED is blinking you succeeded. If not find out what is wrong and fix it.

Post-lab Questions

1. Which transistor amp has more gain. The FET or the Bipolar?
2. Why is step 7 called the Saturation Mode Experiment?
3. Why is step 13 called the Triode Mode Switch Experiment?

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