Bipolar-Junction Transistor: Mrinmoy Kundu, Lecturer Dept. of EEE, BUET Date: 4/2/2024

Bipolar-Junction Transistor
Mrinmoy Kundu, Lecturer

mrinmoy@eee.buet.ac.bd
Dept. of EEE, BUET
Date: 4/2/2024
Reference : Chapter 6, Microelectronic Circuits- Sedra & Smith (6th edition)

Introduction of BJT
• Bipolar – meaning both types of carrier (electron and hole) contribute to the current
• BJT is a 3-terminal device, the basic principle involved is using the voltage between two terminals to
control the current flowing in the third terminal. In this way, a three-terminal device can realize a
voltage-controlled current source (VCCS).
Introduction of BJT
• BJT consists of two PN junctions, the emitter–base junction (EBJ) and the collector–base junction (CBJ).
Depending on the bias condition (forward or reverse) of each of these junctions, different modes of
operation of the BJT are obtained
• The active mode is used if the transistor is to operate as an amplifier.
• Switching applications (e.g., logic circuits) utilize both cutoff and saturation modes.
Operation in active mode
𝑣𝐶𝐸 = 𝑣𝐶𝐵 + 𝑣𝐵𝐸
For active mode,
𝑣𝐶𝐵 > −0.4V
𝑣𝐵𝐸 ~ 0.7𝑉
npn: Current flows from collector to emitter, 𝑣𝐵𝐸 ~0.7𝑉

pnp: Current flows from emitter to collector, 𝑣𝐸𝐵 ~ 0.7𝑉
Typically, 𝛽 ~ 100 − 500
𝛼 ~ 1 but 𝛼 < 1
Operation in active mode
Emitter Current
• Emitter to base: electron
• Base to emitter : hole
• Depends on VBE
Base Current
• Diffusing electrons
• Recombined electrons
Collector Current
• Diffused electrons from
emitter get swept by the CBJ
depletion region
Different Mode
Example with Active mode of operation
Large Signal Equivalent Circuit in Active Mode
Large Signal Model refers to the BJT model,

T-Model which describes the bias/operating point.
• Ideally, 𝐼𝐶 remains constant in active mode,

modeled by a constant current source.
• BE junction is forward biased: pn junction
diode.
𝝅-Model
CE Configuration
Emitter serves as a common terminal between the input and output port.
Cut-off region : VBE < 0.7V

IB ~ 0, IC ~ 0
Saturation region : VBE > 0.7V , VCE < 0.3V

IC ∝ VCE and slope increases with increasing IB
IB
Active region : VBE > 0.7V , VCE > 0.3V
IC is effectively independent of VCE and
IC increases with increasing IB
Practically, 𝐼𝐶 does not remain constant. This is called Early Effect.

It is modeled by adding a resistor to the collector terminal.
CE Configuration
Emitter serves as a common terminal between the input and output port.
Cut-off region : VBE < 0.7V

IB ~ 0, IC ~ 0
Saturation region : VBE > 0.7V , VCE < 0.3V

IC ∝ VCE and slope increases with increasing IB
Active region : VBE > 0.7V , VCE > 0.3V

IC is effectively independent of VCE and
IC increases with increasing IB
Practically, 𝐼𝐶 does not remain constant. This is called Early Effect.

It is modeled by adding a resistor to the collector terminal.
CE: Active Operation
Q point/operating point of a transistor is

characterized by a base current IB, a collector
current IC and a collector–emitter voltage VCE.
Q-point is determined by the external

resistances, sources etc. connected to the
terminals.
Like in Example 6.2, we designed a BJT circuit

to have a Q-point at IC = 2mA with VCE = 5.71V
Δ𝑖𝐶 IC
Incremental, or AC 𝛽 = ~
Δ𝑖𝐵 IB
Bias/Q-Point
The BJT circuit will operate at the

intersection point of BJT ic vs vCE
characteristic and the load line.
CE: Saturation Operation
In saturation mode, CE terminal acts like a
small resistance with resistance value
Typical value vCE in deep saturation ~ 0.2 V

Active Mode
Also See Example 6-4,
6-5,6-6,6-7,6-8,6-9,6-10
Edge of saturation
Deep saturation
BJT as a amplifier
𝑰𝑪
= 𝑰𝑪 + 𝒗𝒃𝒆 = 𝑰𝑪 + 𝒊𝒄
𝑽𝑻
Voltage Transfer Characteristics
𝐼
Transconductance 𝒈𝒎 : small variation in collection current, 𝑖𝑐 = 𝑣𝑏𝑒 𝑉𝐶 = 𝑔𝑚 𝑣𝑏𝑒
𝑇
Small signal Voltage Gain

BJT as a amplifier
• BJT in active region can be used as an amplifier.

• Firstly, bias the circuit at a suitable Q point with
DC voltage source VBE and VCC. Then, apply
the AC signal vbe to be amplified on top of the Output signal
DC input.
• For perfect amplifier operation, 𝐼𝐶 must be
insensitive to the variation in 𝛽, meaning the
bias point should not change.
• 𝛽 changes because of temperature variation.
Input signal
Practical Biasing Scheme
Most basic schemes for biasing the BJT:

(a) by fixing VBE;
(b) by fixing IB.
Both result in wide variations in IC and hence in VCE
and therefore are considered to be “bad.”
Classical Discrete-Circuit Bias See Example 6-20
Emitter resistance RE improves the biasing To make IE insensitive to temperature and β variation, we
scheme, by providing a negative feedback design the circuit to satisfy the following two constraints:
action that stabilizes the bias current.
BJT as a switch
Switching operation can be attained in saturation and cut off mode.
Depending on the current IB meaning voltage at the base terminal, current IC will flow or not.
Basic logical inverter

End

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Bipolar-Junction Transistor: Mrinmoy Kundu, Lecturer Dept. of EEE, BUET Date: 4/2/2024

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Bipolar-Junction Transistor

Mrinmoy Kundu, Lecturer

Reference : Chapter 6, Microelectronic Circuits- Sedra & Smith (6th edition)

npn: Current flows from collector to emitter, 𝑣𝐵𝐸 ~0.7𝑉

Large Signal Model refers to the BJT model,

• Ideally, 𝐼𝐶 remains constant in active mode,

Cut-off region : VBE < 0.7V

Saturation region : VBE > 0.7V , VCE < 0.3V

Practically, 𝐼𝐶 does not remain constant. This is called Early Effect.

Cut-off region : VBE < 0.7V

Saturation region : VBE > 0.7V , VCE < 0.3V

Active region : VBE > 0.7V , VCE > 0.3V

Practically, 𝐼𝐶 does not remain constant. This is called Early Effect.

Q point/operating point of a transistor is

Q-point is determined by the external

Like in Example 6.2, we designed a BJT circuit

The BJT circuit will operate at the

Typical value vCE in deep saturation ~ 0.2 V

Small signal Voltage Gain

• BJT in active region can be used as an amplifier.

Most basic schemes for biasing the BJT:

Basic logical inverter

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