Analog Electronic and Linear Integrated Circuits: Lecture #2

Analog Electronic and Linear
Integrated Circuits
Lecture #2
BIPOLAR JUNCTION TRANSISTOR
Dr. Jayanta Kumar Rakshit

Department of EIE 1
Introduction
• A bipolar junction transistor (BJT) is a three terminal semiconductor
device in which the operation depends on the interaction of both
majority and minority carriers and hence the name Bipolar.
• The BJT is analogous to a vacuum triode and is comparatively smaller
in size.
• It is used in amplifier and oscillator circuits, and as a switch in digital
circuit.
• It has wide applications in computers, satellites and other modern
communication system. 2
Construction
• The BJT consists of a silicon (or germanium) crystal
in which a thin layer of N-type silicon is sandwiched
between two layers of P-type silicon ---known as
PNP transistor.
• Alternatively, in a NPN transistor, a layer of P-type

material is sandwiched between two layers of N-type
material.
3
B
NPN and PNP B
E N P N C E P N P C
C E C
E
Memory aid: NPN

means Not Pointing iN. Memory aid: PNP means
NPN Pointing iN Properly. PNP
B B
The three portions of the transistor  The emitter region is heavily doped and
are Emitter, Base and Collector, its job is to emit carriers into the base.
shown as E, B, and C, respectively  The base region is very thin and lightly
doped.
•The arrow on the emitter specifies Most of the current carriers injected into
the direction of current flow when the base pass on to the collector.
the EB junction is forward biased.  The collector region is moderately
doped and is the largest of all three
regions. 4
Transistor biasing
• Usually the emitter-base
junction is forward biased and
collector-base junction is reverse
biased.
• Due to the forward bias on the
emitter-base junction, an emitter IE=IB+IC
current flows through the base into
the collector.
• Through the collector-base
junction is reverse biased, almost
the entire emitter current flows
through the collector circuit.
5
Current Components in a Transistor
So, IE+IB+IC=0
6
Transistor configuration
• Transistor configuration is a connection of

transistor to get variety operation.
• 3 types of configuration:
– Common Collector.
– Common Base.
–Common Emitter.
7
Common-Collector Configuration
The input signal is applied to
the base terminal and the output
is taken from the emitter
terminal.
• Collector terminal is common
to the input and output of the
circuit
• Input – BC
• Output – EC
Can be used as impedance matching device.

8
Common-Base Configuration
Base terminal is a common
point for input and output.
• Input – EB
• Output – CB
Not applicable as an amplifier because the relation

between input current gain (IE) and output current
gain (IC) is approximately 1.
9
Common-Emitter Configuration
Emitter terminal is common

for input and output circuit
• Input – BE
• Output – CE
• Mostly applied in practical amplifier circuits, since it

provides good voltage, current and power gain.
10
Comparison of CB CE and CC configuration
S .No Characteristics CB CE CC
1 Input impedance Low Medium High
2 Output impedance High medium low
3 Current gain Low High High
4 Voltage gain High High Unity
5 Power gain Medium High Low
6 Phase reversal No Yes No
7 application AF amplifiers Voltage & Impedance

power matching
amplifiers
11
I-V Characteristic for CE configuration :
Input characteristic
• Input characteristic:
• current (IB) against input
voltage (VBE) for several output
voltage (VCE)
• From the graph
 IB = 0 A, VBE < 0.7V (Si)
 IB = value VBE > 0.7V (Si)
• The transistor turned on when
VBE = 0.7V
12
output characteristic
• Output characteristic:
output current (IC)
against output voltage
(VCE) for several input
current (IB).
• 3 operating regions:
– Saturation region
– Cut-off region
– Active region
13
output characteristic (contd...)
• Saturation region – in which both junctions are forward-biased
and IC increase linearly with VCE
• Cut-off region – where both junctions are reverse-biased, the IB is
very small, and essentially no IC flows, IC is essentially zero with
increasing VCE
• Active region – in which the transistor can act as a linear
amplifier, where the B-E junction is forward-biased and B-C
junction is reverse-biased. IC increases drastically although only
small changes of IB.
Saturation and cut-off regions – areas where the transistor can

operate as a switch
Active region – area where transistor operates as an amplifier
14
Transistor as a switch
• When a transistor is used as a switch, it is usually required
to be brought alternatively in the saturation and cut-off
conditions.
• When in saturation condition, it should carry heavy current,
so the voltage drop across the transistor is as near to zero as
possible. It may be considered as “closed switch”.
• When in cut-off condition, it should carry almost no current
so that it may be considered to be an “open switch”.
15
Current Relationships
• Relations between IC and IE : α = IC/IE
• Value of α usually 0.9998 to 0.9999, α ≈ 1
• • Relations between IC and IB : β = IC/IB or IC= βIB
• Value of β usually in range of 50 to 400
IC 
I C   .I E IB   IC IC  I B  I B
 1
I E  IC  I B
1  IC
I B  I E  IC  IC  and 
 1 IB
IC= α(IC+IB) +ICO IC(1- α)= αIB +ICO
IC=(1  ) IB +(1 1 ) ICO IC= βIB + (1+ β)ICO

16
Problem-1
A transistor is operating in CE mode. Calculate VCE if β=125,
assuming VBE=0.6 V.
Solution
When VBE=0.6 V, the base current is
10  VBE 10  0.6
IB   mA  0.0303 mA
310 310
Now, β=125, therefore, IC=β.IB=125 x 0.0303 mA =3.79 mA
Again, VCE = 20 - IC x 5 x 103 V=1.05 V

17
Problem-2
A silicon n-p-n transistor having β=100 and ICO=22 nA is operated in
the CE configuration. Assuming VBE=0.7 V, determine the transistor
currents and the region of operation of the transistor. What happens
if the resistance RC is indefinitely increased?
18
Solution
Since the base is forward biased, the transistor is not cutoff. So, it is either
in the active region or in the saturation region.
Let us assume that the transistor is in the active region. Application of

KVL to the base circuit gives,
IB.RB+VBE=VBB
VBB  VBE 5  0.7

IB   mA  0.0195 mA  19.5A
RB 220
Here, ICO<<IB, therefore,
IC=β.IB=100 x 19.5 x10-3 mA=1.95 mA
To justify the assumption that the transistor operates in the active region,
we must show that the collector junction is reverse-biased.
19
Solution (contd…)
Applying KVL to the collector circuit, we have,
IC. RC+ VCB+VBE=VCC
VCB= VCC-IC.RC-VBE
=12 – 1.95X3.3 – 0.7 = 4.86 V
A positive value of VCB implies that for the n-p-n transistor, the collector junction is
reverse-biased. Therefore, the transistor is actually in the active region.
The emitter current is, IE= -(IC+IB)= -(1.95+0.0195) mA
The negative sign indicates that IE actually flows in the direction opposite to
the arrowhead as shown in figure.
In the active region, IB and IC do not depend on the collector circuit

resistance RC. So if, RC is gradually increased, we see from the collector
circuit equation that at one stage VCB becomes negative. The transistor is
then no longer in the active region, it goes over to the saturation region.
20
Checking a Transistor with an Ohmmeter
An analog ohmmeter can be used to check a transistor because the emitter-base and
collector-base junctions are p-n junctions.
This is illustrated in Fig. where the npn transistor is replaced by its diode equivalent
circuit
To check the base-emitter junction of an npn transistor, first connect the ohmmeter
as shown in Fig.(a) and then reverse the ohmmeter leads as shown in (b).
For a good p-n junction made of silicon, the ratio RR/RF should be equal to or greater
than 1000:1.
21
Checking a Transistor with an Ohmmeter (contd...)
To check the collector-base junction, first connect the ohmmeter as shown in
Fig. (c) and then reverse the ohmmeter leads as shown in (d).
For a good p-n junction made of silicon, the ratio RR/RF should be equal to or
greater than 1000:1.
The resistance measured between the collector and emitter should read high
or infinite for both connections of the meter leads.
NOTE
Low resistance across the junctions in both directions: transistor is shorted.
High resistance on both directions: transistor is open.
In these cases, the transistor is defective and must be replaced.
22
Your understanding
Can transistors be constructed as two diodes that are
connected together back to back like below ????
23
The End
24

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Analog Electronic and Linear

Dr. Jayanta Kumar Rakshit

device in which the operation depends on the interaction of both

majority and minority carriers and hence the name Bipolar.

• The BJT is analogous to a vacuum triode and is comparatively smaller

• It is used in amplifier and oscillator circuits, and as a switch in digital

• It has wide applications in computers, satellites and other modern

• Alternatively, in a NPN transistor, a layer of P-type

Memory aid: NPN

• Transistor configuration is a connection of

Can be used as impedance matching device.

Not applicable as an amplifier because the relation

Emitter terminal is common

• Mostly applied in practical amplifier circuits, since it

1 Input impedance Low Medium High

2 Output impedance High medium low

3 Current gain Low High High

4 Voltage gain High High Unity

5 Power gain Medium High Low

6 Phase reversal No Yes No

7 application AF amplifiers Voltage & Impedance

Saturation and cut-off regions – areas where the transistor can

IC= α(IC+IB) +ICO IC(1- α)= αIB +ICO

IC=(1  ) IB +(1 1 ) ICO IC= βIB + (1+ β)ICO

Again, VCE = 20 - IC x 5 x 103 V=1.05 V

Let us assume that the transistor is in the active region. Application of

VBB  VBE 5  0.7

Here, ICO<<IB, therefore,

IC=β.IB=100 x 19.5 x10-3 mA=1.95 mA

The emitter current is, IE= -(IC+IB)= -(1.95+0.0195) mA

In the active region, IB and IC do not depend on the collector circuit

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