Handout 10 A
Handout 10 A
Handout 10 A
Lecture 10a
EE-215 Electronic Devices and Circuits
Asst Prof Muhammad Anis Chaudhary
1 of 7 10/13/2015 01:30 PM
Handout 10a , Asst Prof M Anis Ch, Electronic Devices and Circuits
2 of 7 10/13/2015 01:30 PM
Handout 10a , Asst Prof M Anis Ch, Electronic Devices and Circuits
As the Emitter is strongly doped relative to the collector, the minority carrier (electons)
distribution in the base can be given as
As CBJ is now forward-biased, the electron concentration at
the collector edge is no longer zero rather it is a value proportional to evBC /VT
= iC = IS evBE /VT ISC evBC /VT
where ISC is the scale current for CBJ
3 of 7 10/13/2015 01:30 PM
Handout 10a , Asst Prof M Anis Ch, Electronic Devices and Circuits
Note that here we augment the model for active region, with the forward-conducting CBJ diode
DC
4 of 7 10/13/2015 01:30 PM
Handout 10a , Asst Prof M Anis Ch, Electronic Devices and Circuits
5 of 7 10/13/2015 01:30 PM
Handout 10a , Asst Prof M Anis Ch, Electronic Devices and Circuits
e /
BC VT IS
(vBE vBC )/VT = ln
ISC
IS
ISC
vBE vBC = VT ln IS
(vB vE )(vB vC )= VT ln
ISC
IS
(vB vE )(vB vC )= VT ln
ISC
IS
ISC
vB vE vB + vC = VT ln IS
ISC
vE + vC = VT ln IS
ISC
= vCE = VT ln IS
As CBJ area is 100 times the EBJ area = ISC = 100 IS
I
= ISCS = 100 = vCE = VT ln 100 = 0.11513V = 115.13mV
Exercise 6.9
Use Eqs. (6.14), (6.15), and (6.16) to show that a BJT operating in saturation with VCE = VCEsat has
a forced given by
ISC
eVCEsat /VT IS
forced = ISC
eVCEsat /VT + IS
Fing forced for = 100, ISC /IS = 100, and VCEsat = 0.2V
Solution
eq6.14 = iC = IS evBE /VT ISC evBC /VT
6 of 7 10/13/2015 01:30 PM
Handout 10a , Asst Prof M Anis Ch, Electronic Devices and Circuits
IS
eq6.15 = iB =
evBE /VT + ISC evBC /VT
= . C
i
Eq6.16 = forced iB saturation
iC IS evBE /VT ISC evBC /VT
forced = . iB saturation
= IS
evBE /VT +ISC evBC /VT
)
IS evBE /VT ISC evBC /VT
forced = (
IS evBE /VT +ISC evBC /VT
divide numerator and denominator by evBC /VT
evBE /VT
IS ISC
IS
evBC /VT
forced = evBE /VT
+ISC
evBC /VT
vBE vBC
)
IS e VT ISC
forced = ( vBE vBC
IS e VT +ISC
As
vBE vBC =(vB vE )(vB vC )= vB vE vB + vC = vE + vC = vC vE = vCE
vCE
)
IS e VT ISC
= forced = ( vCE
IS e VT +ISC
vCE
)
IS e VT ISC
forced = ( vCE
IS e VT +ISC
divide numerator and denominator by IS
e VT IISC
v CE
= forced = vCE
e VT + I
S
ISC
S
when = 100, ISC /IS = 100, and VCEsat = 0.2V
e0.2/25e3 100
forced = 100( e0.2/25e3 +(100)(100)
)= 22.194
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