Transistors: Transfer Resistor
Transistors: Transfer Resistor
Transistors: Transfer Resistor
Transfer Resistor
Chapter 9
Bipolar Transistors
Base
Collector
Emitter
Operation
Begin by reverse biasing the CB junction
Here we are showing an NPN transistor
as an example
Currents
Conventional View
Original Manufacture
Base Thickness
The thickness of the unmodified Base region has
to be just right.
Too thin, and the Base would essentially vanish. The
Amplification Properties
The C-B voltage junction operates near
breakdown.
This ensures that a small E-B voltage causes
avalanche
Large current through the device
Load Line
Slope of
the load
line is 1/RL
Cut-off
Note that the load line intersects the 75 mA curve below the
plateau region. This is saturation and IC = IB doesnt work in
this region.
Example
= 10 V 4.4 V = 5.6 V
Example
IC
5.6 V
20 mA
3.4 V
30 mA
1.2 V
40 mA
Gain as a function of IC
Operating Limits
There will be a limit on the dissipated power
PD(max) = VCEIC
VCE and IC were the parameters plotted on the
characteristic curve.
If there is a voltage limit (VCE(max)), then you can
Example
Assume PD(max) = 0.5 W
VCE(max) = 20 V
IC(max) = 50 mA
PD(max)
VCE
IC
0.5 W
5 V 100 mA
10
50
15
33
20
25
Operating Range
Operating
Range
Voltage Amplifiers
Common Base PNP
Equivalent ac Circuit
rE = internal ac emitter
resistance
IE = Vin/rE (Ohms Law)
Vout = ICRC IERC
Vout
AV voltage gain
Vin
I E RC RC
AV
I E rE
rE
Current Gains
Common Base
= IC/IE < 1
Common Emitter
= IC/IB
1 1
( 1 )
Example
If = 50, then = 50/51 = 0.98
Recall < 1
Rearranging,
= +
(1-) =
= /(1-)
Transistors as Switches
Details
In Cut-off
All currents are zero and VCE = VCC
In Saturation
IB big enough to produce IC(sat) IB
ground loop
Example
a) What is VCE when Vin = 0 V?
Ans. VCE = VCC = 10 V
b) What minimum value of IB is
required to saturate the transistor
if = 200? Take VCE(sat) = 0 V
IC(sat) VCC/RC = 10 V/1000
= 10 mA
Then, IB = IC(sat)/ = 10 mA/200 = 0.05mA
Example
LED
Distortion
The location of the point Q (size of the dc
Driven to saturation
Driven into Cutoff
Base Biasing
It is usually not necessary to provide two
VCC VBE
IB
RC
and
IC = IB
Base Biasing
Use Kirchhoffs Voltage Law on the black
Example
Let RC = 560
RB = 100 k
VCC = +12 V
@ 25 C = 100
@ 75 C = 150
@ 25 C
VCC VBE 12 V - 0.7 V
IB
113 A
RB
100,000
I C I B (100)(113 A) 11.3 mA
VCE VCC I B R C
12 V - (100)(113 A)(560 )
5.67 V
@ 75 C
IB is the same
IC = 16.95 mA
VCE = 2.51 V
IC increases by 50%
VCE decreases by 56%
Transistor Amplifiers
Amplification
The process of increasing the strength of a
signal.
The result of controlling a relatively large
quantity of current (output) with a small
quantity of current (input).
Amplifier
Class A
Entire input waveform is faithfully
reproduced.
Transistor spends its entire time in the
active mode
Never reaches either cutoff or saturation.
Drive the transistor exactly halfway between
Class A
Class B
No DC bias voltage
The transistor spends half its time in active
Push-pull Pair
Class AB
Between Class A (100% operation) and
Class C
IC flows for less than half then cycle. Usually get
more gain in Class B and C, but more distortion
Details
At positive peak of input, VBB is adding to the
input
Resistance in the transistor is reduced
Current in the circuit increases
Larger current means more voltage drop across
RC (VRC = IRC)
Larger voltage drop across RC leaves less
voltage to be dropped across the transistor
We take the output VCE as input increases, VCE
decreases.
More details
As the input goes to the negative peak
Transistor resistance increases
Less current flows
Less voltage is dropped across RC
More voltage can be dropped across C-E
The result is a phase reversal
Feature of the common emitter amplifier
transistor current.
Also called an Emitter Follower circuit output on emitter is almost a replica of the
input
Input is across the C-B junction this is reversed biased and the impedance is high
Output is across the B-E junction this is forward biased and the impedance is low.
Current gain is high but voltage gain is low.
Gain Factors
IC
IE
IC
IB
IE
IB
Gamma
Recall from Kirchhoffs Current Law
I B + IC = I E
IB
IC I E
1
IB IB
1
Ex. For = 100
And since
1-
1-
1-
1
LCD
1-
1-
= /(1+) = 0.99
= 1 + = 101
Bringing it Together
Type
Common
Base
Common
Emitter
Common
Collector
180
Voltage Gain
High
Medium
Low
Current Gain
Low ()
Medium ()
High ()
Power Gain
Low
High
Medium
Input Z
Low
Medium
High
Output Z
High
Medium
Low
Relation
between
input/output
phase
Hybrid Parameters
Condition
hi
Input resistance
Output shorted
hr
Input open
hf
Output shorted
ho
Output conductance
Input open
Hybrid Parameters
=
= Slope of curve
Hybrid Parameters
hie = VB/IB
Ohms Law
hre = VB/VC
Hybrid Parameters
hfe = IC/IB
Equivalent of
hoe = IC/VC
Various Forms
Common
Emitter (e)
Common
Base (b)
Common
Collector (c)
hi (ohms)
VB/IB
VE/IB
VB/IB
hr (unitless)
VB/VC
VE/VC
VB/VE
hf (unitless)
IC/IB
IC/IE
IE/IB
ho (watts)
ICVC
ICVC
IEVE
Pin-outs
Loudness
When the energy (intensity) of the sound
decibels
When the energy (intensity) of the sound
Decibel Scale
For intensities
L = 10 log(I/Io)
For energies
L = 10 log(E/Eo)
For amplitudes
L = 20 log(A/Ao)
Threshold of Hearing
The Io or Eo or Ao refers to the intensity, energy, or
140
130
Pneumatic (jack) hammer
Planes on airport runway
Cymbal crash
120
Power tools
110
100
80
Average factory
70
Busy street
Small orchestra
60
50
Quiet conversation
40
Quiet office
30
20
10
The Math
l1 = 10 log(I1/Io)
l2 = 10 log(I2/Io)
l2 l1 = l = 10(log I2 log Io log I1 + log Io)
= 10(log I2 log I1)
l2 l1 = l = 10 log(I2/I1)
Threshold of Hearing when I = Io
l = 0 dB
Example
A loudspeaker produces loudness rated at 90 dB
hfe
Frequency
Interelement Capacitance
As reverse bias increases on the C-B junction,
Feedback
to input
Superheterodyne Receiver