Electronic circuits with amplification capabilities can perform more efficiently

if the BJT undergoes biasing. Generally, this process involves applying an

external voltage to its terminals that switch the device to the desired state.
Many circuit designs commonly feature resistors to distribute correct input
current and voltage levels. Varying BJT biasing techniques provide specific
characteristics, while others prevent thermal runaway. In effect, this makes
them very useful for amplification applications.

In electronics, 'biasing' usually refers to a fixed DC voltage or current applied

to a terminal of an electronic component such as a diode, transistor or
vacuum tube in a circuit in which AC signals are also present, in order to
establish proper operating conditions for the component.

What is BJT Biasing?

Generally speaking, transistor biasing involves applying a specific amount of

voltage to a BJT’s base and emitter terminals, improving its efficiency and
performance. In this case, the process enables a transistor to amplify an AC
input signal in a transistor circuit. So, biasing the BJT will set the emitter-base
junction in a forward-biased state. Meanwhile, the base-collector intersection
will be configured to a reverse-biased state. Thus, it will operate in the active
region.

Also, the collector resistor should have a rating that allows the collector-
emitter voltage to exceed 0.5V for germanium transistors and 1V for silicon
transistors.

Beta BJT
Image showing the current flow process in a bipolar junction transistor.

Source: Wikimedia Commons

Beta (β) refers to the device’s overall sensitivity between the base current
and its collector amplification level. It can also identify the device’s gain. For
example, a transistor’s base current will amplify by 100 if the β
value matches that value. Of course, this factor is generated while the
bipolar junction transistor operates in the forward-active state.

BJT Biasing Circuits

We included a few examples of BJT biasing circuits, useful for amplification

purposes.

Fixed bias
Fixed bias circuit diagram.

As you can see in the circuit diagram, a base resistor (R B) connects to the
VCC and base terminal. In this case, a voltage drop across RB causes the base-
emitter junction to set to a forward-biased state. The following formula
determines IB’s value.

Both VCC and VBE have a fixed value in the fixed bias type circuit. Meanwhile,
RB remains constant. As a result, IB will also have a continuous value, leading
to a limited operating point. Thus, this bias type provides poor thermal
stability due to its β+1 stability factor.
This occurs due to the unpredictability of the transistor’s β-parameter. It can
also widely differ, especially with a similar model and transistor type. The
IC will also alter when the β varies. Therefore, this β dependent bias type
could experience operating point changes due to the transistor attribute and
temperature modifications.

Overall, the fixed base bias circuit relies on minimal components with a
simplistic design. By adjusting the RB value in the course, users can change
the active region’s operating point. In addition, the source does not have a
load since the base-emitter junction features no resistors. As a result, this
circuit has switching applications.

The following equations reference the voltage and current for this circuit:

Collector-to-base bias
The circuit diagram represents a collector-to-base bias design.

In this collector-to-base bias setting, two resistors supply the transistor’s

active region with DC bias despite β’s value. Since the DC bias comes from
the collector voltage (VC), it ensures excellent stability.

Rather than the supply voltage rail (VCC), the base bias resistor (RB) connects
to the transistor’s collector (C). An increase in collector current will cause the
collector voltage to decrease. In effect, the base drive reduces, decreasing
the collector current. This ensures the transistor’s Q-point stays fixed. Thus,
the collector feedback biasing technique generates negative feedback
surrounding the transistor. That occurs because RB draws direct input from
the output, distributing it to the input terminal.

A voltage drop across the load resistor (RL) produces the biasing voltage. So,
increasing the load current will result in a significant voltage drop across the
load resistor. Meanwhile, it leads to a decreased collector voltage. Afterward,
the base current (IB) will drop, reverting IC to its original value.
Dropping the collector current produces a reversed reaction. In that case,
this biasing approach refers to self-biasing. Overall, this design provides
excellent applications for many amplifier projects.

You can find the circuit equation for collector-to-base bias below:

Fixed bias with emitter resistor

Fixed bias with emitter resistor circuit diagram.

The circuit diagram shows a fixed bias network connected to the transistor’s
emitter with an external resistor (RE). Emitter current increases if VBE remains
constant as the temperature rises. However, an increased emitter current (I E)
causes a boost in the emitter voltage (VE = IERE), leading to a voltage
reduction across the base resistor (RB).

The below equation determines the voltage across the base resistor.

Meanwhile, you can determine the base current via the below formula:
This decreases the base current, resulting in reduced collector current
since IC matches IB. The formula IC = α IE (α equals 1) defines the collector
and emitter current. As a result, this counters the increase in the emitter’s
current temperature, ensuring a steady operating point. Replacing the
transistor with an alternative type may alter the I C value. Using the same
technique as above will nullify any changes, keeping a persistent operating
point. Therefore, this biasing network provides improved support over the
fixed base bias network.

Overall, the circuit utilizes this equation:

Voltage divider bias or potential divider

Voltage divider circuit diagram.

As you can see, two external resistors, R1 and R2, integrate into this circuit to
create a voltage divider. This setup allows voltage generated across R 2 to set
the transistor’s emitter junction to a forward bias state. Overall, the current
flowing through R2 will be ten times higher than the necessary base current.

Generally, this biasing type means that variations occurring in V BE and β will
not affect IC, which, in turn, provides maximum thermal stability. A
temperature increase will cause IC and IE to boost. This results in a higher
emitter voltage, resulting in a lower base-emitter voltage. Afterward, this
leads to a decrease in base current (IB), reverting IC to its initial state.

Regardless of the decreased amplifier gain, this biasing circuit has popular
applications due to its maximized stability.

The circuit relies on the below formula:

Emitter bias
Circuit diagram showing an emitter bias design.

The circuit, as shown above, relies on two power supply sources, V CC and
VEE, to operate. These feature matching but opposite polarities. V EE sets the
base-emitter junction to a forward-biased state. Meanwhile, V CC forms the
collector-base intersection to a reverse bias state.

Additionally, IC can rely on RE >> RB/β and VEE >> VBE rather than VBE and β.
Doing so provides a balanced operating point.
Summary

As you can see, BJT biasing ensures that the transistor will operate correctly
in a circuit, providing AC signal amplification. It achieves this by selecting
resistors that affect the transistor’s operating point. Additionally, the
collector junction sets to a reverse bias state while the emitter-base sets to a
forward-biased state. Of course, the circuit design will depend entirely on the
intended application and what you want to achieve.