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Lab 2 Report BJT Amplifier

This document investigates the relationships between various voltages and currents for a silicon transistor. It includes graphs of base current vs base-emitter voltage and collector current vs collector-emitter voltage, which show the transistor's input and output characteristics. Changing the collector-emitter voltage has a greater effect on collector current than changing base current, as collector current changes rapidly then levels off with increasing collector-emitter voltage. The document also compares the common base, common emitter, and common collector transistor configurations in terms of their input/output terminals, impedances, gains, and power transfer properties.

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kuanzc
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
78 views

Lab 2 Report BJT Amplifier

This document investigates the relationships between various voltages and currents for a silicon transistor. It includes graphs of base current vs base-emitter voltage and collector current vs collector-emitter voltage, which show the transistor's input and output characteristics. Changing the collector-emitter voltage has a greater effect on collector current than changing base current, as collector current changes rapidly then levels off with increasing collector-emitter voltage. The document also compares the common base, common emitter, and common collector transistor configurations in terms of their input/output terminals, impedances, gains, and power transfer properties.

Uploaded by

kuanzc
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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To investigate relationships between base to emitter voltage, base current, collector to emitter

voltage, and collector current for a mill watt style silicon transistor.
IB versus VBE graph

The graph above show the base current, IB against the base emitter voltage, VBE. The graph show the
input conductance of the transistor. This graph is usually used to determine the input resistance of
the transistor.

IC versus VCE graph (Step 4)

The graph above show the collector current, IC against the collector-emitter voltage, VCE. The graph
shows the output characteristic. We can obtain the value of output conductance (and also output
resistance) from the slope. As for the near horizontal part of the part show that there is almost no
changes in the collector current, IC when the collector-emitter voltage, VCE is varied. This is common
when the output of the transistor is connected to a large resistances.

Which has the greater effect of IC, changing the IB values or changing the VCE values?
But changing the IB values, the IC will change linearly only, while by changing the VCE, the IC changes
rapidly first before reaching saturation point. Therefore, changing the VCE has a greater effect before
it reaches saturation point.

Part B

Part C
Type
Characteristic
Common Base Common Emitter Common Collector
Input Terminal Emitter Base Base
Output Terminal Collector Collector Emitter
Input Impedance Low Medium High
Output Impedance High High Low
Phase Angle 0 180 0
Voltage Gain High Medium Low
Current Gain Low Medium High
Power Gain Low High Medium

The power gain is the highest when the voltage gain and current gain is at middle level as shown in
the graph below.

Where when the load resistance is at the middle level produces the maximum power transfer. And
this configuration is for the common emitter.

What happens when a different resistance is used?
It depends on which resistance in the circuit is modified, and according to the table above, it will
change accordingly the circuit.
For example, a common base amplifier, the input terminal is Emitter, so with the resistance of the
input Emitter is changed, the Gain of the circuit will change too.

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