STC03DE170HP: Hybrid Emitter Switched Bipolar Transistor Esbt 1700V - 3A - 0.33
STC03DE170HP: Hybrid Emitter Switched Bipolar Transistor Esbt 1700V - 3A - 0.33
STC03DE170HP: Hybrid Emitter Switched Bipolar Transistor Esbt 1700V - 3A - 0.33
Features
VCS(ON) IC RCS(ON)
1V 3A 0.33 Ω
Applications
■ Aux SMPS for three phase mains
Figure 1. Internal schematic diagrams
Description
The STC03DE170HP is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC03DE170HP is designed for use in aux
flyback smps for any three phase application.
Applications
■ Aux SMPS for three phase mains
1 Electrical ratings
IC Collector current 3 A
ICM Collector peak current (tP < 5ms) 6 A
IB Base current 1 A
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STC03DE170HP Electrical characteristics
2 Electrical characteristics
Collector-source current
ICS(SS) VCS(SS) =1700V 100 µA
(VBS =V GS =0V)
Base-source current
IBS(OS) VBS(OS) =30V 10 µA
(IC =0, VGS =0V)
Source-base current
ISB(OS) VSB(OS) =9V 100 µA
(IC =0, VGS =0V)
Gate-source leakage
IGS(OS) VGS = ± 20V 500 nA
(VBS =0V)
VCS=15V VGS=10V
QGS(tot) Gate-source Charge 12.5 nC
VCB=0V IC =4A
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Electrical characteristics STC03DE170HP
Maximum collector-
VCSW source voltage switched RG =47Ω hFE =5 IC = 4A 1700 V
without snubber
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STC03DE170HP Electrical characteristics
Figure 10. Inductive load switching time Figure 11. Inductive load switching time
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Package mechanical data STC03DE170HP
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STC03DE170HP Package mechanical data
mm.
DIM.
MIN. TYP MAX.
A 5.50 5.65 5.80
A1 2.85 3.15 3.25
A2 1.92
A3 3.18
b 0.95 1.10 1.30
b1 1.10 1.50
b2 2.50 2.90
c 0.40 0.80
D 23.85 24 24.15
D1 21.50
E 15.45 15.60 15.75
e 2.54
e1 5.08
L 10.20 10.80
L1 2.20 2.50 2.80
L2 18.50
L3 3
øP 3.55 3.65
S 5.50
7908765A
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Revision history STC03DE170HP
4 Revision history
26
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STC03DE170HP
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