DISCRETE SEMICONDUCTORS

DATA SHEET
ndbook, halfpage

M3D049

BAS316
High-speed diode
Product data sheet 2004 Feb 04
Supersedes data of 1998 Mar 26
NXP Semiconductors Product data sheet

High-speed diode BAS316

FEATURES PINNING
• Very small plastic SMD package PIN DESCRIPTION
• High switching speed: max. 4 ns 1 cathode
• Continuous reverse voltage: max. 100 V 2 anode
• Repetitive peak reverse voltage: max. 100 V
• Repetitive peak forward current: max. 500 mA.

APPLICATIONS handbook, halfpage

k a

• High-speed switching in e.g. surface mounted circuits.

MAM157

DESCRIPTION
The BAS316 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD323 SMD Marking code: A6.
plastic package. Cathode side indicated by a bar.

Fig.1 Simplified outline (SOD323) and symbol.

ORDERING INFORMATION

TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
BAS316 − plastic surface mounted package; 2 leads SOD323

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage − 100 V
VR continuous reverse voltage − 100 V
IF continuous forward current Ts = 90 °C; note 1; see Fig.2 − 250 mA
IFRM repetitive peak forward current − 500 mA
IFSM non-repetitive peak forward square wave; Tj = 25 °C prior to
current surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t=1s − 0.5 A
Ptot total power dissipation Ts = 90 °C; note 1 − 400 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

Note
1. Ts is the temperature at the soldering point of the cathode tab.

2004 Feb 04 2
NXP Semiconductors Product data sheet

High-speed diode BAS316

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VF forward voltage see Fig.3
IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 50 mA 1 V
IF = 150 mA 1.25 V
IR reverse current see Fig.5
VR = 25 V 30 nA
VR = 75 V 1 µA
VR = 25 V; Tj = 150 °C 30 µA
VR = 75 V; Tj = 150 °C 50 µA
Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF
trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; 4 ns
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-s) thermal resistance from junction to soldering point note 1 150 K/W

Note
1. Soldering point of the cathode tab.

2004 Feb 04 3
NXP Semiconductors Product data sheet

High-speed diode BAS316

GRAPHICAL DATA

MGM762 MBG382
500 300
handbook, halfpage handbook, halfpage
IF
(mA) IF
400 (mA)

(1) (2) (3)

200
300

200
100

100

0 0
0 50 100 150 200 0 1 VF (V) 2
Ts (oC)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of soldering point Fig.3 Forward current as a function of forward
temperature. voltage.

MBG704
102
handbook, full pagewidth

IFSM
(A)

10

10−1
1 10 102 103 tp (µs) 104

Based on square wave currents.

Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

2004 Feb 04 4
NXP Semiconductors Product data sheet

High-speed diode BAS316

MGA884 MBG446
105 0.8
handbook, halfpage
IR Cd
(nA) (pF)
V R = 75 V
4
10 0.6

max 75 V
103 0.4

2
25 V
10 0.2

typ
typ
10 0
0 100 200 0 4 8 12 16
T j ( o C) VR (V)

f = 1 MHz; Tj = 25 °C.

Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse
temperature. voltage; typical values.

2004 Feb 04 5
NXP Semiconductors Product data sheet

High-speed diode BAS316

handbook, full pagewidth

tr tp
t
D.U.T. 10%
RS = 50 Ω IF IF t rr
SAMPLING t
OSCILLOSCOPE
V = VR I F x R S R i = 50 Ω

90% (1)
VR
MGA881

input signal output signal

(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I 1 kΩ 450 Ω
I V
90%

R = 50 Ω
S OSCILLOSCOPE V fr
D.U.T.
R i = 50 Ω

10%
MGA882 t t
tr tp

input output
signal signal

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.

Fig.8 Forward recovery voltage test circuit and waveforms.

2004 Feb 04 6
NXP Semiconductors Product data sheet

High-speed diode BAS316

PACKAGE OUTLINE

Plastic surface-mounted package; 2 leads SOD323

D A E

HD v M A

Q
1 2

bp
A

A1
(1) c

Lp
detail X

0 1 2 mm

scale
DIMENSIONS (mm are the original dimensions)

UNIT A1 bp c D E HD Lp Q v
A max
1.1 0.40 0.25 1.8 1.35 2.7 0.45 0.25
mm 0.05 0.2
0.8 0.25 0.10 1.6 1.15 2.3 0.15 0.15

Note
1. The marking bar indicates the cathode

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

03-12-17
SOD323 SC-76
06-03-16

2004 Feb 04 7
NXP Semiconductors Product data sheet

High-speed diode BAS316

DATA SHEET STATUS

DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DISCLAIMERS above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for
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extended periods may affect device reliability.
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extract of the product data given in the Limiting values and
Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is
any of these products are for illustrative purposes only. not complete, exhaustive or legally binding.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions

2004 Feb 04 8
 NXP Semiconductors

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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Printed in The Netherlands R76/04/pp9 Date of release: 2004 Feb 04 Document order number: 9397 750 12574