BAV199 Low-leakage double diode Product data sheet 2001 Oct 12 Supersedes data of 1999 May 11 NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
FEATURES MARKING PINNING
Plastic SMD package MARKING PIN DESCRIPTION TYPE NUMBER Low leakage current: typ. 3 pA CODE(1) 1 anode Switching time: typ. 0.8 s BAV199 JY 2 cathode Continuous reverse voltage: Note 3 anode; cathode max. 75 V 1. = p: Made in Hong Kong. Repetitive peak reverse voltage: = t: Made in Malaysia. max. 85 V = W: Made in China. Repetitive peak forward current: max. 500 mA.
APPLICATION handbook, 4 columns 2 1
Low-leakage current applications in surface mounted circuits. 2 1
DESCRIPTION 3 Epitaxial, medium-speed switching, 3 double diode in a small SOT23 plastic Top view MAM107
SMD package. The diodes are
connected in series. Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage 85 V VR continuous reverse voltage 75 V IF continuous forward current single diode loaded; note 1; see Fig.2 160 mA double diode loaded; note 1; see Fig.2 140 mA IFRM repetitive peak forward current 500 mA IFSM non-repetitive peak forward square wave; Tj = 25 C prior to surge; current see Fig.4 tp = 1 s 4 A tp = 1 ms 1 A tp = 1 s 0.5 A Ptot total power dissipation Tamb = 25 C; note 1 250 mW Tstg storage temperature 65 +150 C Tj junction temperature 150 C
Note 1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12 2 NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode VF forward voltage see Fig.3 IF = 1 mA 900 mV IF = 10 mA 1 000 mV IF = 50 mA 1100 mV IF = 150 mA 1 250 mV IR reverse current see Fig.5 VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 C 3 80 nA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 10 mA to 0.8 3 s IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W
Note 1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12 3 NXP Semiconductors Product data sheet
0 0 0 100 200 T amb ( oC) 0 0.4 0.8 1.2 1.6 V F (V) (1) Tj = 150 C; typical values. Device mounted on a FR4 printed-circuit board. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient Fig.3 Forward current as a function of forward temperature. voltage; per diode.
MBG704 102 handbook, full pagewidth
IFSM (A)
10
101 1 10 102 103 tp (s) 104
Based on square wave currents; Tj = 25 C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
2001 Oct 12 4 NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
MLB754 2 MBG526 10halfpage handbook, 2 handbook, halfpage IR (nA)
VR = 75 V. (1) Maximum values. (2) Typical values. f = 1 MHz; Tj = 25 C.
Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse temperature; per diode. voltage; per diode; typical values.
handbook, full pagewidth
tr tp t D.U.T. 10% RS = 50 IF IF t rr SAMPLING t OSCILLOSCOPE V = VR I F x R S R i = 50
90% (1) VR MGA881
input signal output signal
Fig.7 Reverse recovery time test circuit and waveforms.
2001 Oct 12 5 NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D B E A X
HE v M A
A1
1 2 c
e1 bp w M B Lp
e detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1 UNIT A bp c D E e e1 HE Lp Q v w max. 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
OUTLINE REFERENCES EUROPEAN
ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION
97-02-28 SOT23 TO-236AB 99-09-13
2001 Oct 12 6 NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
DATA SHEET STATUS
DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
DISCLAIMERS above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for General Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license Nothing in this document Suitability for use NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data The Quick reference data is an the customers own risk. extract of the product data given in the Limiting values and Applications Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions
2001 Oct 12 7 NXP Semiconductors
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 12 Document order number: 9397 750 08764
