NTD20P06L, NTDV20P06L

Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK

Features
• Withstands High Energy in Avalanche and Commutation Modes
• Low Gate Charge for Fast Switching www.onsemi.com
• AEC Q101 Qualified − NTDV20P06L
• These Devices are Pb−Free and are RoHS Compliant ID MAX
V(BR)DSS RDS(on) TYP (Note 1)
Applications
−60 V 130 mW @ −5.0 V −15.5 A
• Bridge Circuits
• Power Supplies, Power Motor Controls
P−Channel
• DC−DC Conversion
D

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit
G
Drain−to−Source Voltage VDSS −60 V
Gate−to−Source Continuous VGS $20 V
Voltage S
Non−Repetitive tp v10 ms VGSM $30
Continuous Steady State TC = 25°C ID −15.5 A MARKING DIAGRAMS
Drain Current 4
4 Drain
Power Dissipa- Steady State TC = 25°C PD 65 W
tion

AYWW

P06LG
1 2

T20
Pulsed Drain tp = 10 ms IDM $50 A 3
Current
DPAK
Operating Junction and Storage Temperature TJ, −55 to °C CASE 369C
TSTG 175 STYLE 2 2
1 3
Drain
Single Pulse Drain−to−Source Avalanche EAS 304 mJ Gate Source
Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A, 4
L = 2.7 mH, RG = 25 W) 4 Drain
Lead Temperature for Soldering Purposes TL 260 °C
(1/8” from case for 10 s)
AYWW

P06LG
T20

THERMAL RESISTANCE RATINGS

1
Parameter Symbol Max Unit 2
3
Junction−to−Case (Drain) RqJC 2.3 °C/W IPAK/DPAK
CASE 369D
Junction−to−Ambient – Steady State (Note 1) RqJA 80 1 2 3
STYLE 2
Junction−to−Ambient – Steady State (Note 2) RqJA 110 Gate Drain Source

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be 20P06L Device Code
assumed, damage may occur and reliability may be affected. A = Assembly Location
1. Surface−mounted on FR4 board using 1 in sq. pad size Y = Year
(Cu area = 1.127 in sq. [1 oz] including traces) WW = Work Week
2. Surface−mounted on FR4 board using the minimum recommended pad size G = Pb−Free Package
(Cu area = 0.412 in sq.)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

September, 2017 − Rev. 8 NTD20P06L/D
 NTD20P06L, NTDV20P06L

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −60 −74 V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ −64 mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C −1.0 mA
VDS = −60 V TJ = 150°C −10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −1.0 −1.5 −2.0 V
Gate Threshold Temperature Coefficient VGS(TH)/TJ 3.1 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = −5.0 V, ID = −7.5 A 0.130 0.150 W
VGS = −5.0 V, ID = −15 A 0.143
Forward Transconductance gFS VDS = −10 V, ID = −7.5 A 11 S
Drain−to−Source On−Voltage VDS(on) VGS = −5.0 V, TJ = 25°C −1.2 V
ID = −7.5 A TJ = 150°C −1.9
CHARGES AND CAPACITANCES
Input Capacitance CISS 740 1190 pF
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = −25 V 207 300
Reverse Transfer Capacitance CRSS 66 120
Total Gate Charge QG(TOT) 15 26 nC
Gate−to−Source Charge QGS VGS = −5.0 V, VDS = −48 V, 4.0
ID = −18 A
Gate−to−Drain Charge QGD 7.0
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(ON) 11 20 ns
Rise Time tr VGS = −5.0 V, VDD = −30 V, 90 180
Turn−Off Delay Time td(OFF) ID = −15 A, RG = 9.1 W 28 50
Fall Time tf 70 135
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD TJ = 25°C 1.5 2.5 V
VGS = 0 V, IS = −15 A
TJ = 150°C 1.3
Reverse Recovery Time tRR 60 ns
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 39
Discharge Time tb IS = −12 A 21
Reverse Recovery Charge QRR 0.13 nC
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 NTD20P06L, NTDV20P06L

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

40 40
VGS = −10 V VGS = −6 V
35 TJ = −55°C
VGS = −5.5 V
VGS = −9 V
−ID, DRAIN CURRENT (A)

−ID, DRAIN CURRENT (A)

30 30
VGS = −5 V
VGS = −8 V
25 VGS = −7 V TJ = 25°C TJ = 125°C
VGS = −4.5 V
20 20
VGS = −4 V
15
VGS = −3.5 V
10 10
VGS = −3 V
5
TJ = 25°C VDS w 10 V
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VDS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE

0.5 0.25
0.45 VGS = −5 V 0.225 TJ = 25°C

0.4 0.2
0.35 0.175
0.3 0.15
TJ = 125°C VGS = −5 V
0.125
(W)

0.25
0.2 0.1 VGS = −10 V

0.15 TJ = 25°C 0.075

0.1 TJ = −55°C 0.05

0.05 0.025

0 0
0 5 10 15 20 25 30 0 3 6 9 12 15 18 21 24
−ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Gate Voltage

2 10000
RDS(on), DRAIN−TO−SOURCE RESISTANCE

VGS = 0 V
1.8 ID = −7.5 A
1.6 VGS = −5 V
1000 TJ = 150°C
−ID, LEAKAGE (nA)

1.4
(NORMALIZED)

1.2
TJ = 125°C
1 100
0.8
0.6
10
0.4
0.2
0 1
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55 60
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature versus Voltage

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 NTD20P06L, NTDV20P06L

2400
2200 VDS = 0 V VGS = 0 V TJ = 25°C
2000

C, CAPACITANCE (pF)
1800 Ciss
1600
1400
1200 Crss
1000
Ciss
800
600
Coss
400
200 Crss
0
−10 −5 0 5 10 15 20 25

−VGS −VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation

7.5 60
−VGS, GATE−TO−SOURCE VOLTAGE

VDS, DRAIN−TO−SOURCE VOLTAGE

ID = −15 A TJ = 25°C
6.25 50

5.0 QG 40
VDS
VGS 30

(V)
(V)

3.75
Qgs QGD

2.5 20

1.25 10

0 0
0 4 8 12 16
Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge

1000 20
VDD = −30 V VGS = 0 V
ID = −15 A TJ = 25°C
−IS, SOURCE CURRENT (A)

VGS = −5 V 15
100 tR
t, TIME (nS)

tF
10
td(off)
10
td(on) 5

1 0
1 10 100 0 0.25 0.5 0.75 1 1.25 1.5 1.75
Rg, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus
versus Gate Resistance Current

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 NTD20P06L, NTDV20P06L

EAS, SINGLE PULSE DRAIN−TO−SOURCE

1000 350
VGS = −15 V ID = −15 A
Single Pulse 300
−ID, DRAIN CURRENT (A)

AVALANCHE ENERGY (mJ)

TC = 25°C
100 250
100
200
10
1
150
10 ms
100
1 dc
RDS(on) Limit
Thermal Limit 50
Package Limit
0.1 0
0.1 1 10 100 25 50 75 100 125 150
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature
Rqjc(°C/W), EFFECTIVE TRANSIENT THERMAL RESPONSE

10

D = 0.5
1
0.2
0.1
0.05
0.1
0.02

0.01
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1

t, TIME (s)
Figure 13. Thermal Response

ORDERING INFORMATION
Device Package Shipping†
NTD20P06LG 75 Units / Rail
NTD20P06LT4G DPAK 2500 / Tape & Reel
NTDV20P06LT4G (Pb−Free) 2500 / Tape & Reel
NTDV20P06LT4G−VF01 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 NTD20P06L, NTDV20P06L

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C
ISSUE F NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 MENSIONS b3, L3 and Z.
B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D OUTERMOST EXTREMES OF THE PLASTIC BODY.
DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.

L4 INCHES MILLIMETERS
NOTE 7
DIM MIN MAX MIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
0.005 (0.13) M C b2 0.028 0.045 0.72 1.14
TOP VIEW b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
GAUGE SEATING
L2 PLANE C PLANE
H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L BOTTOM VIEW L3 0.035 0.050 0.89 1.27
A1 L4 −−− 0.040 −−− 1.01
L1 ALTERNATE
Z 0.155 −−− 3.93 −−−
CONSTRUCTIONS
DETAIL A STYLE 2:
ROTATED 905 CW PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

SOLDERING FOOTPRINT*
6.20 3.00
0.244 0.118
2.58
0.102

5.80 1.60 6.17

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 NTD20P06L, NTDV20P06L

PACKAGE DIMENSIONS

IPAK
CASE 369D
ISSUE C

B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 −−− 3.93 −−−
D 3 PL
STYLE 2:
G 0.13 (0.005) M T PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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