ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

IHW20N65R5

Datasheet

IndustrialPowerControl
 IHW20N65R5
ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

Features: C

•Powerfulmonolithicreverse-conductingdiodewithlowforward
voltage
•TRENCHSTOPTMtechnologyoffers:
-verytightparameterdistribution
-highruggednessandstabletemperaturebehavior G
-verylowVCEsatandlowEoff E
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•Inductioncooking
•Inverterizedmicrowaveovens
•Resonantconverters
G
C
E

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IHW20N65R5 650V 20A 1.35V 175°C H20ER5 PG-TO247-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

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ResonantSwitchingSeries

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 40.0 A
TC=100°C 20.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A
Turn off safe operating area
- 60.0 A
VCE≤650V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 19.0 A
TC=100°C 10.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A
Gate-emitter voltage VGE ±20 V
PowerdissipationTC=25°C 150.0
Ptot W
PowerdissipationTC=100°C 75.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 1.00 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 4.68 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

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ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
VGE=15.0V,IC=20.0A
Collector-emitter saturation voltage VCEsat Tvj=25°C - 1.35 1.70 V
Tvj=175°C - 1.60 -
VGE=0V,IF=20.0A
Diode forward voltage VF Tvj=25°C - 1.70 2.10 V
Tvj=175°C - 2.00 -
Gate-emitter threshold voltage VGE(th) IC=0.20mA,VCE=VGE 3.2 4.0 4.8 V
VCE=650V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40 µA
Tvj=175°C - 600 -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 60.0 - S
Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 2450 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 23 - pF
Reverse transfer capacitance Cres - 10 -
VCC=480V,IC=20.0A,
Gate charge QG - 97.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 23 - ns
Rise time tr VCC=400V,IC=20.0A, - 16 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=23.0Ω,RG(off)=23.0Ω, - 250 - ns
Fall time tf Lσ=35nH,Cσ=32pF - 7 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.54 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.16 - mJ
Total switching energy Ets - 0.70 - mJ

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DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 82 - ns
Diode reverse recovery charge Qrr VR=400V, - 1.55 - µC
IF=20.0A,
Diode peak reverse recovery current Irrm diF/dt=1100A/µs - 29.0 - A
Diode peak rate of fall of reverse
dirr/dt - -2080 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 22 - ns
Rise time tr VCC=400V,IC=20.0A, - 16 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=23.0Ω,RG(off)=23.0Ω, - 290 - ns
Fall time tf Lσ=35nH,Cσ=32pF - 20 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.62 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.29 - mJ
Total switching energy Ets - 0.91 - mJ

DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr Tvj=175°C, - 101 - ns
Diode reverse recovery charge Qrr VR=400V, - 2.69 - µC
IF=20.0A,
Diode peak reverse recovery current Irrm diF/dt=1100A/µs - 43.0 - A
Diode peak rate of fall of reverse
dirr/dt - -1690 - A/µs
recoverycurrentduringtb

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100 160

140

not for linear use

120
IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]
10
100

80

60
1

40

20

0.1 0
1 10 100 1000 25 50 75 100 125 150 175
VCE,COLLECTOR-EMITTERVOLTAGE[V] TC,CASETEMPERATURE[°C]
Figure 1. Safeoperatingarea Figure 2. Powerdissipationasafunctionofcase
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs) temperature
(Tvj≤175°C)

40 60
VGE=20V
55
35 17V
50
15V

30 45 13V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

40 11V
25
9V
35
8V
20 30
7V
25
15 6V
20

10 15

10
5
5

0 0
25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5
TC,CASETEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase Figure 4. Typicaloutputcharacteristic
temperature (Tvj=25°C)
(VGE≥15V,Tvj≤175°C)

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60 60
VGE=20V Tvj=25°C
55 Tvj=175°C
17V
50 50
15V

45 13V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
40 11V 40

9V
35
8V
30 30
7V
25
6V
20 20
5V
15

10 10

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 3 4 5 6 7 8
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaltransfercharacteristic
(Tvj=175°C) (VCE=20V)

2.00 1000
IC=2,5A
IC=5A
1.75 IC=10A
VCEsat,COLLECTOR-EMITTERSATURATION[V]

IC=20A

td(off)
1.50 tf
td(on)
t,SWITCHINGTIMES[ns]

100 tr
1.25

1.00

0.75
10

0.50

0.25

0.00 1
0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40
Tvj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature collectorcurrent
(VGE=15V) (inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RGon=23Ω,RGoff=23Ω,dynamic
test circuit in Figure E)
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1000 1000
td(off)
tf
td(on)
tr

td(off)
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
tf
100 td(on) 100
tr

10 10

1 1
10 20 30 40 50 60 70 80 25 50 75 100 125 150 175
RG,GATERESISTANCE[Ω] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionofgate Figure 10. Typicalswitchingtimesasafunctionof
resistance junctiontemperature
(inductiveload,Tvj=175°C,VCE=400V, (inductiveload,VCE=400V,VGE=0/15V,
VGE=0/15V,IC=20A,dynamictestcircuitin IC=20A,RGon=23Ω,RGoff=23Ω,dynamictest
Figure E) circuit in Figure E)

6.0 2.0
typ. Eoff
min. Eon
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

5.5 1.8
max. Ets
E,SWITCHINGENERGYLOSSES[mJ]

5.0 1.6

4.5 1.4

4.0 1.2

3.5 1.0

3.0 0.8

2.5 0.6

2.0 0.4

1.5 0.2

1.0 0.0
0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40
Tvj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature functionofcollectorcurrent
(IC=0.2mA) (inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RGon=23Ω,RGoff=23Ω,dynamic
test circuit in Figure E)
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1.4 1.0
Eoff Eoff
Eon Eon
0.9
Ets Ets
1.2
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
0.8

1.0 0.7

0.6
0.8

0.5

0.6
0.4

0.4 0.3

0.2
0.2
0.1

0.0 0.0
10 20 30 40 50 60 70 80 25 50 75 100 125 150 175
RG,GATERESISTANCE[Ω] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofgateresistance functionofjunctiontemperature
(inductiveload,Tvj=175°C,VCE=400V, (inductiveload,VCE=400V,VGE=0/15V,
VGE=0/15V,IC=20A,dynamictestcircuitin IC=20A,RGon=23Ω,RGoff=23Ω,dynamictest
Figure E) circuit in Figure E)

15 1E+4
130V Cies
14 520V Coes
Cres
13

12
VGE,GATE-EMITTERVOLTAGE[V]

1000
11
C,CAPACITANCE[pF]

10

8
100
7

4
10
3

0 1
0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30
QG,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge Figure 16. Typicalcapacitanceasafunctionof
(IC=20A) collector-emittervoltage
(VGE=0V,f=1MHz)

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Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]

Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1

1
D=0.5 D=0.5
0.2 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.1
0.01 0.01
single pulse 0.1 single pulse

i: 1 2 3 4 5 i: 1 2 3 4 5
ri[K/W]: 5.0E-3 0.3855072 0.3892888 0.2350033 8.5E-3 ri[K/W]: 2.523557 1.451367 0.4791582 0.2141134 0.01191211
τi[s]: 7.4E-6 3.4E-4 2.8E-3 0.01433068 0.208526 τi[s]: 1.5E-4 5.9E-4 3.7E-3 0.01656028 0.1999705

0.01 0.01
1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-6 1E-5 1E-4 0.001 0.01 0.1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedanceasa Figure 18. Diodetransientthermalimpedanceasa
functionofpulsewidth functionofpulsewidth
(D=tp/T) (D=tp/T)

200 3.5
Tvj=25°C, IF = 20A Tvj=25°C, IF = 20A
Tvj=175°C, IF = 20A Tvj=175°C, IF = 20A
175
3.0
Qrr,REVERSERECOVERYCHARGE[µC]
trr,REVERSERECOVERYTIME[ns]

150
2.5

125
2.0

100

1.5
75

1.0
50

0.5
25

0 0.0
500 600 700 800 900 1000 1100 1200 1300 500 600 700 800 900 1000 1100 1200 1300
dIF/dt,DIODECURRENTSLOPE[A/µs] dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Typicalreverserecoverytimeasafunction Figure 20. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

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50 0
Tvj=25°C, IF = 20A Tvj=25°C, IF = 20A
Tvj=175°C, IF = 20A Tvj=175°C, IF = 20A
45

dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs]
-500
Irr,REVERSERECOVERYCURRENT[A]

40

35
-1000

30

25 -1500

20

-2000
15

10
-2500

0 -3000
500 600 700 800 900 1000 1100 1200 1300 500 600 700 800 900 1000 1100 1200 1300
dIF/dt,DIODECURRENTSLOPE[A/µs] dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverycurrentasa Figure 22. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V) currentslope
(VR=400V)

60 2.50
Tvj=25°C IF=2,5A
Tvj=175°C IF=5A
2.25 IF=10A
50 IF=20A

2.00
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

40
1.75

30 1.50

1.25
20

1.00

10
0.75

0 0.50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 23. Typicaldiodeforwardcurrentasafunction Figure 24. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

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Package Drawing PG-TO247-3

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Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

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RevisionHistory
IHW20N65R5

Revision:2015-12-22,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2014-06-13 Preliminary data sheet
1.2 2014-06-16 -
2.1 2014-09-12 Final data sheet
2.2 2014-11-27 Update of diode forward current values
2.3 2015-12-22 Minor change Conditions Static Characteristic

Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.

ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
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completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

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