ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

IHW20N120R3

Datasheet

IndustrialPowerControl
 IHW20N120R3
ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

Features: C

•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior G
-lowVCEsat E
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:
G
C
•Inductivecooking E
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IHW20N120R3 1200V 20A 1.48V 175°C H20R1203 PG-TO247-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

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ResonantSwitchingSeries

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 40.0 A
TC=100°C 20.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 60.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 40.0 A
TC=100°C 20.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±25
PowerdissipationTC=25°C 310.0
Ptot W
PowerdissipationTC=100°C 155.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.48 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 0.48 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

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ResonantSwitchingSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
VGE=15.0V,IC=20.0A
Tvj=25°C - 1.48 1.70
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.70 -
Tvj=175°C - 1.80 -
VGE=0V,IF=20.0A
Tvj=25°C - 1.55 1.75
Diode forward voltage VF V
Tvj=125°C - 1.70 -
Tvj=175°C - 1.80 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.8 6.4 V
VCE=1200V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 100.0 µA
Tvj=175°C - - 2500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 18.3 - S
Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1503 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 50 - pF
Reverse transfer capacitance Cres - 42 -
VCC=960V,IC=20.0A,
Gate charge QG - 211.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) Tvj=25°C, - 387 - ns
Fall time tf VCC=600V,IC=20.0A, - 25 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=15.0Ω,RG(off)=15.0Ω, - 0.95 - mJ
Lσ=180nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

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ResonantSwitchingSeries

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) Tvj=175°C, - 454 - ns
Fall time tf VCC=600V,IC=20.0A, - 84 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=15.0Ω,RG(off)=15.0Ω, - 1.65 - mJ
Lσ=180nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

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ResonantSwitchingSeries

100

60
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
tp=1µs

10 5µs
TC=80°
40 20µs
TC=110°
100µs

1ms

10ms
1
20 DC

0 0.1
0.01 0.1 1 10 100 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=0/15V,
RG=15Ω)

350

300
40
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

250

200

150
20

100

50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

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60 60

VGE=20V VGE=20V
50 50
17V 17V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
15V 15V

40 13V 40 13V

11V 11V

9V 9V
30 30
7V 7V

5V 5V
20 20

10 10

0 0
0 1 2 3 0 1 2 3 4
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

3.0
25°C IC=10A
Tj=175°C IC=20A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

IC=40A
60

2.5
IC,COLLECTORCURRENT[A]

50

40

2.0

30

20
1.5

10

0 1.0
0 2 4 6 8 10 12 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

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td(off) td(off)
tf tf
1000 1000
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10
0 10 20 30 40 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V, (ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) IC=20A,testcircuitinFig.E)

td(off) typ.
1000 tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

7 max.

6
t,SWITCHINGTIMES[ns]

5
100

10
2

1 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=0/15V,IC=20A, (IC=0.5mA)
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
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3
3 Eoff Eoff
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
2
2

1
1

0 0
0 10 20 30 40 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
RG(on)=15,RG(off)=15Ω,testcircuitinFig.E) test circuit in Fig. E)

2 2.2
Eoff Eoff
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

2.0

1.8

1.6

1.4

0 1.2
25 50 75 100 125 150 175 400 500 600 700 800 900 1000
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=0/15V,IC=20A, (ind.load,Tj=175°C,VGE=150/V,IC=20A,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
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ResonantSwitchingSeries

15.0
240V
960V

12.5
VGE,GATE-EMITTERVOLTAGE[V]

1000
Cies
Coes

C,CAPACITANCE[pF]
10.0 Cres

7.5

100
5.0

2.5

0.0 10
0 40 80 120 160 200 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=20A) collector-emittervoltage
(VGE=0V,f=1MHz)

1 1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

D=0.5 D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse

0.01 0.01

i: 1 2 3 4 5 6 i: 1 2 3 4 5 6
ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137 ri[K/W]: 9.8E-3 0.0141 0.0698 0.1158 0.1569 0.1137
τi[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259 τi[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259

0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 19. IGBTtransientthermalimpedance Figure 20. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

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40 3
Tj=25°C IF=10A
Tj=175°C IF=20A
IF=40A

30

VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

20

10

0 0
0 1 2 3 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 21. Typicaldiodeforwardcurrentasafunction Figure 22. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

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ResonantSwitchingSeries

PG-TO247-3

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ResonantSwitchingSeries

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

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Revision History
IHW20N120R3

Revision: 2015-01-26, Rev. 2.6

Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2008-05-06 -
1.2 2008-07-11 -
2.3 2008-07-29 -
2.4 2009-04-01 -
2.5 2013-02-12 Layout change
2.6 2015-01-26 Minor changes

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Published by
Infineon Technologies AG
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81726 München, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.

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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
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endangered.

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