Resonantswitchingseries: Industrialpowercontrol
Resonantswitchingseries: Industrialpowercontrol
ReverseconductingIGBTwithmonolithicbodydiode
IHW20N120R3
Datasheet
IndustrialPowerControl
IHW20N120R3
ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
Features: C
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior G
-lowVCEsat E
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
G
C
•Inductivecooking E
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IHW20N120R3 1200V 20A 1.48V 175°C H20R1203 PG-TO247-3
2 Rev.2.6,2015-01-26
IHW20N120R3
ResonantSwitchingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IHW20N120R3
ResonantSwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.48 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 0.48 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient
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IHW20N120R3
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
VGE=15.0V,IC=20.0A
Tvj=25°C - 1.48 1.70
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.70 -
Tvj=175°C - 1.80 -
VGE=0V,IF=20.0A
Tvj=25°C - 1.55 1.75
Diode forward voltage VF V
Tvj=125°C - 1.70 -
Tvj=175°C - 1.80 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.8 6.4 V
VCE=1200V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 100.0 µA
Tvj=175°C - - 2500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 18.3 - S
Integrated gate resistor rG none Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1503 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 50 - pF
Reverse transfer capacitance Cres - 42 -
VCC=960V,IC=20.0A,
Gate charge QG - 211.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) Tvj=25°C, - 387 - ns
Fall time tf VCC=600V,IC=20.0A, - 25 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=15.0Ω,RG(off)=15.0Ω, - 0.95 - mJ
Lσ=180nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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IHW20N120R3
ResonantSwitchingSeries
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) Tvj=175°C, - 454 - ns
Fall time tf VCC=600V,IC=20.0A, - 84 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=15.0Ω,RG(off)=15.0Ω, - 1.65 - mJ
Lσ=180nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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IHW20N120R3
ResonantSwitchingSeries
100
60
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
tp=1µs
10 5µs
TC=80°
40 20µs
TC=110°
100µs
1ms
10ms
1
20 DC
0 0.1
0.01 0.1 1 10 100 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=0/15V,
RG=15Ω)
350
300
40
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
250
200
150
20
100
50
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)
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ResonantSwitchingSeries
60 60
VGE=20V VGE=20V
50 50
17V 17V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
15V 15V
40 13V 40 13V
11V 11V
9V 9V
30 30
7V 7V
5V 5V
20 20
10 10
0 0
0 1 2 3 0 1 2 3 4
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)
3.0
25°C IC=10A
Tj=175°C IC=20A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
IC=40A
60
2.5
IC,COLLECTORCURRENT[A]
50
40
2.0
30
20
1.5
10
0 1.0
0 2 4 6 8 10 12 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)
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ResonantSwitchingSeries
td(off) td(off)
tf tf
1000 1000
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
100 100
10 10
0 10 20 30 40 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V, (ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) IC=20A,testcircuitinFig.E)
td(off) typ.
1000 tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
7 max.
6
t,SWITCHINGTIMES[ns]
5
100
10
2
1 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=0/15V,IC=20A, (IC=0.5mA)
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
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IHW20N120R3
ResonantSwitchingSeries
3
3 Eoff Eoff
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
2
2
1
1
0 0
0 10 20 30 40 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
RG(on)=15,RG(off)=15Ω,testcircuitinFig.E) test circuit in Fig. E)
2 2.2
Eoff Eoff
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
2.0
1.8
1.6
1.4
0 1.2
25 50 75 100 125 150 175 400 500 600 700 800 900 1000
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=0/15V,IC=20A, (ind.load,Tj=175°C,VGE=150/V,IC=20A,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
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IHW20N120R3
ResonantSwitchingSeries
15.0
240V
960V
12.5
VGE,GATE-EMITTERVOLTAGE[V]
1000
Cies
Coes
C,CAPACITANCE[pF]
10.0 Cres
7.5
100
5.0
2.5
0.0 10
0 40 80 120 160 200 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=20A) collector-emittervoltage
(VGE=0V,f=1MHz)
1 1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
D=0.5 D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse
0.01 0.01
i: 1 2 3 4 5 6 i: 1 2 3 4 5 6
ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137 ri[K/W]: 9.8E-3 0.0141 0.0698 0.1158 0.1569 0.1137
τi[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259 τi[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259
0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 19. IGBTtransientthermalimpedance Figure 20. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)
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IHW20N120R3
ResonantSwitchingSeries
40 3
Tj=25°C IF=10A
Tj=175°C IF=20A
IF=40A
30
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
20
10
0 0
0 1 2 3 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 21. Typicaldiodeforwardcurrentasafunction Figure 22. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature
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IHW20N120R3
ResonantSwitchingSeries
PG-TO247-3
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IHW20N120R3
ResonantSwitchingSeries
VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b
a b
10% VGE
t
IC(t) Qa Qb
dI
90% IC
90% IC
10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)
td(off) tf td(on) tr
t
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure B.
14 Rev.2.6,2015-01-26
IHW20N120R3
Resonant Switching Series
Revision History
IHW20N120R3
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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