Infineon IDW80C65D2 DS v02 - 01 EN

Diode
RapidSwitchingEmitterControlledDiode
IDW80C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Datasheet
IndustrialPowerControl
IDW80C65D2
RapidSwitchingEmitterControlledDiode
A1 C1 C2 A2
Features: A1 A2
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge(Qrr)
•Lowforwardvoltage(VF)andstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
C
•Pb-freeleadplating
•RoHScompliant
Applications:
•BoostdiodeinCCMPFC
Packagepindefinition:
•Pin1-anode(A1) 1
•Pin2andbackside-cathode(C) 2
3
•Pin3-anode(A2)
Key Performance and Package Parameters

Type Vrrm If Vf, Tvj=25°C Tvjmax Marking Package
IDW80C65D2 650V 2x 40A 1.6V 175°C C80ED2 PG-TO247-3
2 Rev.2.1,2014-12-09
IDW80C65D2
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3 Rev.2.1,2014-12-09
IDW80C65D2
Maximum Ratings (per leg)

For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter Symbol Value Unit

Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 80.0 A
TC=100°C 40.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A
Diode surge non repetitive forward current
IFSM A
TC=25°C,tp=8.3ms,sinehalfwave 250.0
PowerdissipationTC=25°C 180.0
Ptot W
PowerdissipationTC=100°C 90.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3
Thermal Resistances (per leg)

Parameter Symbol Conditions Max. Value Unit
Characteristic
Diode thermal resistance,1)
Rth(j-c) 0.84 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient
Electrical Characteristics (per leg), at Tvj = 25°C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
IF=40.0A
Tvj=25°C - 1.60 2.20
Diode forward voltage VF V
Tvj=125°C - 1.65 -
Tvj=175°C - 1.65 -
VR=650V
Reverse leakage current2) IR Tvj=25°C - - 40.0 µA
Tvj=175°C - 1600.0 -
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified

Value
min. typ. max.
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
1)
Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached.
2)
Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.
4 Rev.2.1,2014-12-09
IDW80C65D2
Switching Characteristics (per leg), Inductive Load

Value
min. typ. max.
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time trr Tvj=25°C, - 36 - ns
Diode reverse recovery charge Qrr VR=400V, - 0.40 - µC
IF=40.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs, - 22.0 - A
Diode peak rate of fall of reverse Lσ=30nH,
dirr/dt Cσ=40pF, - -10000 - A/µs
recoverycurrentduringtb
switch IPW60R045CP.

IF=40.0A,
switch IPW60R045CP.
Switching Characteristics (per leg), Inductive Load

Value
min. typ. max.
Diode Characteristic, at Tvj = 175°C/125°C
IF=40.0A,
switch IPW60R045CP.

IF=40.0A,
switch IPW60R045CP.
5 Rev.2.1,2014-12-09
IDW80C65D2
180 1
160
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
140
Ptot,POWERDISSIPATION[W]
120 D = 0.5
0.2
0.1
100
0.05
0.1
0.02
80
0.01
single pulse
60
40
20
i: 1 2 3 4 5 6
ri[K/W]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E-3
τi[s]: 1.4E-5 2.4E-4 1.8E-3 7.8E-3 0.129099 2.085894
0 0.01
25 50 75 100 125 150 175 1E-6 1E-5 1E-4 0.001 0.01 0.1
TC,CASETEMPERATURE[°C] tp,PULSEWIDTH[s]
Figure 1. Power dissipation per leg as a function of Figure 2. Diode transient thermal impedance per leg as
case temperature a function of pulse width
(Tvj≤175°C) (D=tp/T)
110 1.50
Tvj=25°C,IF=40A Tvj=25°C,IF=40A
100 Tvj=175°C,IF=40A Tvj=175°C,IF=40A
1.25
Qrr,REVERSERECOVERYCHARGE[µC]
90
trr,REVERSERECOVERYTIME[ns]
80
1.00
70
60
0.75
50
40
0.50
30
20 0.25
10
0 0.00
0 250 500 750 1000 1250 1500 1750 2000 0 250 500 750 1000 1250 1500 1750 2000
dIF/dt,DIODECURRENTSLOPE[A/µs] dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Typical reverse recovery time per leg as a Figure 4. Typical reverse recovery charge per leg as a
function of diode current slope function of diode current slope
(VR=400V) (VR=400V)
6 Rev.2.1,2014-12-09
IDW80C65D2
45 0
40
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/ns]
-2
Irrm,REVERSERECOVERYCURRENT[A]
35
-4
30
25 -6
20 -8
15
-10
10
-12
5
0 -14
0 250 500 750 1000 1250 1500 1750 2000 0 250 500 750 1000 1250 1500 1750 2000
dIF/dt,DIODECURRENTSLOPE[A/µs] dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typical peak reverse recovery current per leg Figure 6. Typical diode peak rate of fall of rev. rec.
as a function of diode current slope current per leg as a function of diode current
(VR=400V) slope
(VR=400V)
45 2.50
Tvj=25°C IF=20A
Tvj=175°C IF=40A
40 2.25 IF=80A
35
2.00
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
30
1.75
25
1.50
20
1.25
15
1.00
10
5 0.75
0 0.50
0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typical diode forward current per leg as a Figure 8. Typical diode forward voltage per leg as a
function of forward voltage function of junction temperature
7 Rev.2.1,2014-12-09
IDW80C65D2
PG-TO247-3
8 Rev.2.1,2014-12-09
IDW80C65D2
VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b
a b
10% VGE
t
IC(t) Qa Qb
dI
90% IC
90% IC
10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)
td(off) tf td(on) tr
t
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4
Figure B.
9 Rev.2.1,2014-12-09
IDW80C65D2
Emitter Controlled Diode Rapid 2 Common Cathode Series
Revision History
IDW80C65D2
Revision: 2014-12-09, Rev. 2.1

Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2014-12-02 Preliminary data sheet
2.1 2014-12-09 Final data sheet
We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
10 Rev. 2.1, 2014-12-09

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Diode

Key Performance and Package Parameters

Maximum Ratings (per leg)

Parameter Symbol Value Unit

Thermal Resistances (per leg)

Electrical Characteristics (per leg), at Tvj = 25°C, unless otherwise specified

Electrical Characteristic, at Tvj = 25°C, unless otherwise specified

Switching Characteristics (per leg), Inductive Load

Diode reverse recovery time trr Tvj=25°C, - 68 - ns

Switching Characteristics (per leg), Inductive Load

Diode reverse recovery time trr Tvj=125°C, - 82 - ns

VCE(t) Figure E. Dynamic test circuit

Revision: 2014-12-09, Rev. 2.1

We Listen to Your Comments

10 Rev. 2.1, 2014-12-09

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