BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

Rev. 04 — 27 February 2009 Product data sheet

1. Product profile

1.1 General description

Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

1.2 Features and benefits

„ High reverse voltage surge capability „ Soft recovery characteristic minimizes
„ High thermal cycling performance power consuming oscillations

„ Low thermal resistance „ Very low on-state loss

1.3 Applications
„ Output rectifiers in high-frequency
switched-mode power supplies

1.4 Quick reference data

Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VRRM repetitive peak - - 200 V
reverse voltage
IO(AV) average output square-wave pulse; δ = 0.5; - - 20 A
current Tmb ≤ 115 °C; both diodes
conducting; see Figure 1;
see Figure 2
IRRM repetitive peak tp = 2 µs; δ = 0.001 - - 0.2 A
reverse current
VESD electrostatic HBM; C = 250 pF; R = 1.5 - - 8 kV
discharge voltage kΩ; all pins
Dynamic characteristics
trr reverse recovery IF = 1 A; VR = 30 V; - 20 25 ns
time dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery;
see Figure 5
IR = 1 A; IF = 0.5 A; - 10 20 ns
Tj = 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
Static characteristics
VF forward voltage IF = 8 A; Tj = 150 °C; see - 0.72 0.85 V
Figure 4
NXP Semiconductors BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V

2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode 1
mb
2 K cathode A1 A2

3 A2 anode 2
K
sym125
mb K mounting base; cathode

1 2 3

SOT78
(TO-220AB; SC-46)

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BYV32E-200 TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46 TO-220AB

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 2 of 9

NXP Semiconductors BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse - 200 V
voltage
VRWM crest working reverse - 200 V
voltage
VR reverse voltage DC - 200 V
IO(AV) average output current square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both - 20 A
diodes conducting; see Figure 1; see Figure 2
IFRM repetitive peak forward δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; per diode - 20 A
current
IFSM non-repetitive peak tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per - 137 A
forward current diode
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per - 125 A
diode
IRRM repetitive peak reverse δ = 0.001; tp = 2 µs - 0.2 A
current
IRSM non-repetitive peak tp = 100 µs - 0.2 A
reverse current
Tstg storage temperature -40 150 °C
Tj junction temperature - 150 °C
VESD electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV
voltage

003aac978 003aac979
12 15
δ=1
Ptot a = 1.57 Ptot
(W) (W)
1.9
0.5
2.2
8 10
2.8
4.0 0.2

0.1

4 5

0 0
0 4 8 12 0 5 10 15
IF(AV) (A) IF(AV) (A)

Fig 1. Forward power dissipation as a function of Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform; average forward current; square waveform;
maximum values maximum values

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 3 of 9

NXP Semiconductors BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from with heatsink compound; both diodes - - 1.6 K/W
junction to mounting conducting
base with heatsink compound; per diode; see - - 2.4 K/W
Figure 3
Rth(j-a) thermal resistance from - 60 - K/W
junction to ambient

003aac980
10
Zth(j-mb)
(K/W)
1

10−1 tp
P δ=
T

10−2
tp t
T
10−3
10−6 10−5 10−4 10−3 10−2 10−1 1 10
tp (s)

Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width

6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VF forward voltage IF = 20 A; Tj = 25 °C - 1 1.15 V
IF = 8 A; Tj = 150 °C; see Figure 4 - 0.72 0.85 V
IR reverse current VR = 200 V; Tj = 100 °C - 0.2 0.6 mA
VR = 200 V; Tj = 25 °C - 6 30 µA
Dynamic characteristics
Qr recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs; - 8 12.5 nC
Tj = 25 °C
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; - 20 25 ns
ramp recovery; Tj = 25 °C; see Figure 5
IF = 0.5 A; IR = 1 A; step recovery; - 10 20 ns
measured at reverse current = 0.25 A;
Tj = 25 °C; see Figure 6
VFR forward recovery IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C; see - - 1 V
voltage Figure 7

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 4 of 9

NXP Semiconductors BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V

003aac981
32 dlF
IF
dt
IF
(A)

24
trr

(1) (2) (3) time

16
25 %

Qr 100 %
8

IR IRM
003aac562
0
0 0.4 0.8 1.2 1.6
VF (V) Fig 5. Reverse recovery definitions; ramp recovery

Fig 4. Forward current as a function of forward

voltage

IF
IF

IF
trr

time time

0.25 x IR VF

Qr
VFRM

IR
VF
IR 003aac563

time
Fig 6. Reverse recovery definitions; step recovery 001aab912

Fig 7. Forward recovery definitions

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 5 of 9

NXP Semiconductors BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

E A
p A1

q mounting
D1 base

L1(1) L2(1)

Q
b1(2)
L (3×)

b2(2)
(2×)
1 2 3

b(3×) c

e e

0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
L2(1)
UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q
max.
4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2

Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
08-04-23
SOT78 3-lead TO-220AB SC-46
08-06-13

Fig 8. Package outline SOT78 (TO-220AB)

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 6 of 9

NXP Semiconductors BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V

8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BYV32E-200_4 20090227 Product data sheet - BYV32E_SERIES_3
Modifications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Package outline updated.
• Type number BYV32E-200 separated from data sheet BYV32E_SERIES_3
BYV32E_SERIES_3 20010301 Product specification - BYV32E_SERIES_2
BYV32E_SERIES_2 19980701 Product specification - BYV32EB_SERIES_1
BYV32EB_SERIES_1 19960801 Product specification - -

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 7 of 9

NXP Semiconductors BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V

9. Legal information

9.1 Data sheet status

Document status [1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
Draft — The document is a draft version only. The content is still under therefore such inclusion and/or use is at the customer’s own risk.
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any Applications — Applications that are described herein for any of these
representations or warranties as to the accuracy or completeness of products are for illustrative purposes only. NXP Semiconductors makes no
information included herein and shall have no liability for the consequences of representation or warranty that such applications will be suitable for the
use of such information. specified use without further testing or modification.

Short data sheet — A short data sheet is an extract from a full data sheet Quick reference data — The Quick reference data is an extract of the
with the same product type number(s) and title. A short data sheet is intended product data given in the Limiting values and Characteristics sections of this
for quick reference only and should not be relied upon to contain detailed and document, and as such is not complete, exhaustive or legally binding.
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales Limiting values — Stress above one or more limiting values (as defined in
office. In case of any inconsistency or conflict with the short data sheet, the the Absolute Maximum Ratings System of IEC 60134) may cause permanent
full data sheet shall prevail. damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
9.3 Disclaimers values for extended periods may affect device reliability.

General — Information in this document is believed to be accurate and Terms and conditions of sale — NXP Semiconductors products are sold
reliable. However, NXP Semiconductors does not give any representations or subject to the general terms and conditions of commercial sale, as published
warranties, expressed or implied, as to the accuracy or completeness of such at http://www.nxp.com/profile/terms, including those pertaining to warranty,
information and shall have no liability for the consequences of use of such intellectual property rights infringement and limitation of liability, unless
information. explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
Right to make changes — NXP Semiconductors reserves the right to make terms and conditions, the latter will prevail.
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without No offer to sell or license — Nothing in this document may be interpreted or
notice. This document supersedes and replaces all information supplied prior construed as an offer to sell products that is open for acceptance or the grant,
to the publication hereof. conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or 9.4 Trademarks
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 8 of 9

NXP Semiconductors BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .7
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
10 Contact information. . . . . . . . . . . . . . . . . . . . . . .8

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 February 2009
Document identifier: BYV32E-200_4