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    IGCT Presentation

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    NinAd Pund
    The document summarizes the features and advantages of the Integrated Gate Commutated Thyristor (IGCT). The IGCT combines the characteristics of a thyristor and transistor, allowing for snubberless operation. It has improved switching characteristics compared to GTO thyristors, with reduced turn-off and on-state losses. The IGCT enables simple and robust series connections for high power applications in a low cost and efficient manner. Key applications include railway power supplies, static var compensators, drives, and static breakers.

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    IGCT Presentation

    Uploaded by

    NinAd Pund
    1K views14 pages
    The document summarizes the features and advantages of the Integrated Gate Commutated Thyristor (IGCT). The IGCT combines the characteristics of a thyristor and transistor, allowing for snubberless operation. It has improved switching characteristics compared to GTO thyristors, with reduced turn-off and on-state losses. The IGCT enables simple and robust series connections for high power applications in a low cost and efficient manner. Key applications include railway power supplies, static var compensators, drives, and static breakers.

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    The document summarizes the features and advantages of the Integrated Gate Commutated Thyristor (IGCT). The IGCT combines the characteristics of a thyristor and transistor, allowing for snubberless operation. It has improved switching characteristics compared to GTO thyristors, with reduced turn-off and on-state losses. The IGCT enables simple and robust series connections for high power applications in a low cost and efficient manner. Key applications include railway power supplies, static var compensators, drives, and static breakers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Download as doc, pdf, or txt
    1K views14 pages

    IGCT Presentation

    Uploaded by

    NinAd Pund
    The document summarizes the features and advantages of the Integrated Gate Commutated Thyristor (IGCT). The IGCT combines the characteristics of a thyristor and transistor, allowing for snubberless operation. It has improved switching characteristics compared to GTO thyristors, with reduced turn-off and on-state losses. The IGCT enables simple and robust series connections for high power applications in a low cost and efficient manner. Key applications include railway power supplies, static var compensators, drives, and static breakers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Download as doc, pdf, or txt
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    Introduction

    Thyristor technology is inherently superior to transistor GTO with its snubbers and IGBT with is high losses GTO drive technology results in costly dv/dt and di/dt snubber circuits GCT combines the thyristor and transistor characteristics IGCT- Combination of GCT and low inductance gate unit without snubbers

    Circuit and Equivalent circuit

    Two transistor equivalent circuit

    Fabrication
    IGCT combines power handling device and the device control circuitry

    Permits integration of free wheeling diode and snubberless operation

    Features of IGCT
    Improved GTO switching characteristics Reduced turn-off and on-state losses Reduced gate drive requirements High frequency operation for continous and dynamic condition Integration of main switches Development of antiparallel diodes

    Improved GTO switching characteristics


    Improved at high power with the hard drive o Integrated gate drive commutates the cathode current to zero

    The hard gate drive converts the thyristor from its pnp latching state to pnp mode within 1microseconds.

    Reduced on-state and turn-off losses


    Reduction in device thickness is achieved by introducing a buffer layer on anode side.

    Table compares he improved characteristics of IGCT with GTO thyristor.

    Snubberless turn-off with antiparallel diodes


    Upgraded high-power presspack diodes manufacture using irradiation process

    Inverter operation
    di/dt control is achieved with an inductor, clamped by a diode and a resistor

    Capacitor in the input makes the input dc voltage constant. Also suppresses the harmonics fed back to the source.

    Output Waveform

    Application of IGCT
    Main advantage is its ability to turn-off in 2 microseconds. With IGCT it is possible to build less costly, more reliable & more compact power control systems including o Railway power supply frequency changers o Static Var Compensator for power factor control o Pump and fan drives for chemical, oil and power sectors o Locomotive drives o Static breakers

    Conclusion
    The IGCT combines all the important innovations needed for future power electronics applications. It enables simple and robust series connection to turn-off devices for high power applications. The additional advantages of IGCT is its low cost, low complexity and high efficiency.

    Reference
    ABB review on Power semiconductor, May 1998 Power electronics by B.S Bimbra Power electronics by Mohd. H. Rashid

    IGCT characteristics
    Turn-on characteristics

    Turn-off characteristics

    IGCT-A new emerging technology for high-power, low-cost inverters

    Presented by Mohammed Jamshid S7-EEE

    Under the guidance of, Mrs. Sobha.M Asst.Professor

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