Esda-Jedec JTR5.2-01-15

ESDA/JEDEC JTR5.
2-01-15
Discontinuing Use of the Machine Model for

Device ESD Qualification
Authors:
JEDEC Solid State Technology Association’s JC-14.3
Subcommittee on Silicon Devices Reliability Qualifications
and Monitoring
Electrostatic Discharge Association

7900 Turin Road, Bldg. 3
Rome, NY 13440
JEDEC Solid State Technology Association

3103 North 10th Street
Arlington, VA 22201
Copyright 2015 by ESD Association. Licensed, by agreement, for enterprise-wide use by Celestica.
No other reproduction or transmission in any form is permitted without written permission of the ESDA.
For inquiries or to report unauthorized use, contact info@esda.org.
ESDA/JEDEC JTR5.2-01-15
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Published by:
Electrostatic Discharge Association

7900 Turin Road, Bldg. 3
Rome, NY 13440
JEDEC Solid State Technology Association

3103 North 10th Street
Arlington, VA 22201
Copyright © 2015 by ESD Association and JEDEC Solid State Technology Association
All rights reserved
No part of this publication may be reproduced in any form, in

an electronic retrieval system or otherwise, without the prior
written permission of the publisher.
Printed in the United States of America
(This foreword is not part of ESDA/JEDEC Joint Technical Report ESDA/JEDEC JTR5.2-01-15)
Foreword
The machine model test, as a requirement for component ESD qualification, is being rapidly
discontinued across the industry. This publication is intended to document why MM evaluation is
not necessary for qualification. The following major conclusions can be made about MM in
general:
1. MM is redundant to HBM at the device level since it produces the same failure mechanisms,
and the two models generally track each other in robustness and in failure modes produced.
2. The MM test has more variability and, consequently, less repeatability than HBM due to the
MM’s greater sensitivity to parasitic effects in the tester circuitry.
3. There are no significant engineering studies (with verified data) which could be used to
establish a required passing level for MM.
4. The test method was incorrectly given the name “machine model”, though no firm, unique
connection between the model and actual machine-induced device failures was ever
established. In fact the model was developed as a “low-voltage HBM”.
5. CDM does a better job of screening for fast metal-to-metal contact events than MM.
6. The vast majority (> 99%) of electrical failures in manufacturing correlate to CDM or to EOS
and not to MM.
7. MM testing has not shown any additional failures not explained by CDM, HBM or EOS.
8. MM testing consumes resources and creates time-to-market delays while providing no

additional failure modes or protection strategies which have not been covered by HBM and
CDM.
9. It is important to understand the scope of this memorandum. It summarizes what has been
learned about the test method only. The information summarized here in no way diminishes
the importance of proper grounding of any metal which may come in contact with ESD-
sensitive devices or the importance of avoiding hard metal-to-metal discharges.
i
TABLE OF CONTENTS
1.0 SCOPE .................................................................................................................................... 1
2.0 REFERENCES ........................................................................................................................ 1
3.0 TERMS, DEFINITIONS, AND LETTER SYMBOLS ............................................................... 1
4.0 BACKGROUND ...................................................................................................................... 2
5.0. MM VS. HBM AND CDM ......................................................................................................... 3
6.0 METAL DISCHARGE VERSUS CDM DISCHARGE .............................................................. 4
7.0 FIELD DATA ANALYSIS ........................................................................................................ 6
8.0 STANDARDS BODIES AND POSITIONS ON MM ................................................................ 6
9.0 CONCLUSIONS ...................................................................................................................... 7
10.0 EPILOGUE .............................................................................................................................. 7
11.0 COMMON GOALS .................................................................................................................. 7
FIGURES
Figure 1: Comparison of HBM, MM, and CDM Waveforms ........................................................... 3
Figure 2: Discharge Current Equation for Metal Discharge or CDM Discharge ............................. 4
Figure 3: Comparison of Measured Waveforms for Metal Discharge and CDM Discharge
Events.............................................................................................................................. 5
Figure 4: Correlation between HBM and MM Measured on the Same Devices ............................ 6
ii
ESDA/JEDEC Joint Technical Report ESDA/JEDEC JTR5.2-01-15
ESDA/JEDEC Joint Technical Report for Discontinuing Use of the Machine Model for
Device ESD Qualification
1.0 SCOPE
Over the last several decades the so called "machine model" (aka MM) and its application to the
required ESD component qualification has been grossly misunderstood. The scope of this JEDEC
document is to present evidence to discontinue use of this particular model stress test without
incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the
document's purpose is to provide the necessary technical arguments for strongly recommending
no further use of this model for IC qualification. The published document should be used as a
reference to propagate this message throughout the industry.
2.0 REFERENCES
[1] JEDEC JESD47 “Stress-Test-Driven Qualification of Integrated Circuits”, www.jedec.org
[2] JEDEC JESD22-A115 “Electrostatic Discharge (ESD) Sensitivity Testing Machine Model
(MM)”, www.jedec.org
[3] ANSI/ESD STM5.2-2012 “Machine Model (MM) – Component Level “ www.esda.org
[4] M. Tanaka, JEITA/JEDEC Meetings, Tokyo, September 2011.
[5] M. Tanaka, K. Okada, and M. Sakimoto, “Clarification of Ultra-high-speed Electrostatic
Discharge and Unification of Discharge Model,” EOS/ESD Symposium, pp, 170-181, 1994.
[6] Industry Council on ESD Target Levels, “White Paper 1: A Case for Lowering Component
Level HBM/MM ESD Specifications and Requirements,” August 2007, at www.esda.org or
JEDEC publication JEP155, “Recommended ESD Target Levels for HBM/MM Qualification”,
www.jedec.org
[7] ANSI/ESD S20.20; 2007; Development of an Electrostatic Discharge Control Program for:
Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding
Electrically Initiated Explosive Devices)
[8] ESDA standards document definitions and hierarchy are summarized at
https://www.esda.org/standards/.
3.0 TERMS, DEFINITIONS, AND LETTER SYMBOLS

AEC Automotive Electronics Council
ANSI American National Standards Institute
CDM charged-device model
EOS electrical overstress
EPA ESD protected area
ESD electrostatic discharge
ESDA Electrostatic Discharge Association; ESD Association
FAR failure analysis report
HBM human body model
IC integrated circuit
JEDEC Joint Electronic Devices Engineering Council
JEITA Japan Electronics and Information Technology Industries Association
MM machine model
OEM original equipment manufacturer
STM standard test method
1
ESDA/JEDEC JTR001-01-12
4.0 BACKGROUND
As will be explained below, the machine model (MM) is a widely misunderstood component ESD
qualification test method. It continues to generate confusion for both OEM customers and their IC
suppliers during ESD qualification. Many companies and design organizations continue to use
MM, mostly as a legacy “required” practice, despite the fact that it has been downgraded by three
standards bodies and is no longer recommended for qualification testing in accordance with
JEDEC JESD47 [1]. The automotive industry, a longtime user of this method, no longer requires it
in their AEC-Q100 list of qualification tests. The scopes of the JEDEC (JESD22-A115) [2] and
ESDA (ANSI/ESD STM5.2) [3] test method documents have also been changed to reflect this
status. There are a number of reasons for these changes, as will be outlined below. The
continued use of MM for qualification based solely on legacy requirements has no technical merit
given the information that has been gathered over the last few years. Those companies who
continue to use MM will take on an unnecessary and burdensome business approach without any
technical benefit. The reasons against use of the MM are as follows:
1) Historically speaking, the 200 pF, “0 ohm” model, which later became known as the machine
model, originated from several Japanese semiconductor corporations as a worst-case
representation of the Human Body Model (HBM). The model was later presumed by some,
because of the lower discharge impedance, to simulate abrupt discharge events caused by
contact with equipment and empty sockets (functional test, burn-in, reliability testing, pick and
place operations, etc). This happened at a time when the very fast rise time of metal-metal
discharges was not well-understood. Since that time, the Charged Device Model (CDM) has
been proven to quite adequately cover these events.
2) Recently, M. Tanaka-san (Renesas Electronics) at the September 2011 JEITA meetings [4]
presented rationale and data supporting the elimination of the MM test. According to his
historical account, the so-called Machine Model originated at Hitachi (now Renesas
Electronics) about 45 years ago and was introduced to Japanese semiconductor customers
as a test case to represent the HBM test in their IC product test report. This test method
spread widely to the Japanese customer base and was later established as an ESD test
standard by the EIAJ in 1981. Around 1985 and onwards, some began to mistakenly refer to
the test as the Machine Model. Then, starting in 1991, ESDA, JEDEC and IEC adopted the
model and its name as a new test standard. As use of the model increased, it was realized
that the Machine Model name caused a lot of misunderstanding that needed to be clarified.
3) In the early days of ESD device testing there was also a desire to avoid the high pre-charging
voltages of the HBM test (2 kV and higher), and the 200 pF and low impedance of the “MM”
was thought to be an equivalent but safe lower voltage test to address the same failure
mechanisms as HBM. However, establishment of a single translation from MM voltage to
HBM voltage has been difficult to achieve. Protection design has traditionally been focused
on meeting the HBM requirement, but MM testers are susceptible to parasitic circuit
elements, with these parasitics from relay switching networks in the simulators causing more
variation in the MM waveform than waveforms from HBM testers. In spite of this and without
any supporting data, 200 V MM became established as a de facto requirement. It was
thought to be the safe level for handling and that this level had to be simultaneously met
along with the de facto 2 kV HBM standard. In reality a device with a 2 kV HBM withstand
voltage might have an MM withstand voltage anywhere from 100 to 300 V, depending on the
device characteristics and the MM tester parasitics. This led to much of the confusion
associated with specifying both HBM and MM levels.
The next important reason for discontinuing MM is that fast discharges to or from a metal surface
are not correctly represented by the MM. The characteristics of the MM rising pulse were not
established based on comparison of measurements on machine pulses, but rather were
determined by characteristics of the already developed HBM simulators. The fast rising leading
edge of metal-to-metal discharges are actually more effectively simulated using the current
standard CDM test methods. This is known today because of the development of high speed
oscilloscopes. However, during the 1980s, there was a misunderstanding that MM was a good
representation for CDM. This misunderstanding actually delayed the eventual development and
acceptance of the CDM standards used today. Later in the 1990s, with the much improved and
2
accurate test for CDM and with the wider recognition that the fast discharges are covered by
CDM alone, the test for MM became more frequently replaced by CDM.
5.0 MM VS. HBM AND CDM

The waveforms for HBM, MM, and CDM are compared in Figure 1. The HBM and MM have
similar ranges of rise time (2-10 ns). Therefore, any thermal heating in silicon taking place in this
time period leads to the same failure mechanisms for both models. This holds true for all
technologies, including advanced technology nodes. This early part of the waveform determines
where and how protection circuits must be deployed in design. With similar rise time
characteristics, HBM and MM encourage the same protection designs. For CDM, on the other
hand, the rise time is much faster (0.1 – 0.5 ns) and often leads to a unique failure mechanism,
like oxide breakdown. Even more important, the observed ESD field failures are dominated by
oxide breakdown when the CDM level is not adequate. Thus, a different set of protection
strategies are generally needed for CDM. This makes it even more critical to focus on CDM
qualification, instead of duplicating the HBM test information by using the MM. In Figure 1, we
also show the observed failure modes for the same I/O pin after stressing with HBM, MM and
CDM. It is clear that, with HBM and MM, the damage sites were the same, occurring in the
protection diode. However, with CDM stress, the damage site corresponds to oxide breakdown
in the output transistor. This also illustrates the fact that meeting high levels of MM does not
improve the CDM performance until the right effective design techniques are employed.
5.0
Current (A) CDM = 300V (typical) Similar rise times
3.75 (~10ns) for HBM / MM
cause comparable
MM = 200V
rates of thermal (Joule)
2.5 heating that result in
similar observed fail
1.25 mode
HBM = 2kV
Time (ns)
20 40 60 80 100
3.5kV HBM 230V MM 500V CDM
•HBM and MM with very similar rise times produced the same
failure damage mode as shown here in the protection diode of
the I/O pin
•But for the same I/O pin the CDM damage was in the output
transistor Drain-Gate edge
Figure 1: Comparison of HBM, MM, and CDM Waveforms
3
Commercial MM testers have inductors built into the MM stimulus circuit. These inductors must
be present to produce the oscillatory waveform required in the MM test method. The inductors,
however, actually slow down the MM waveform (Figure 1), and, therefore, MM cannot represent
very fast metal-to-metal contact discharge as CDM does. On the other hand, the CDM test is
directly represented by elevating the package potential and directly grounding the pin to produce
the fast discharge. MM cannot be relied on to accurately model fast metal-to-metal contact
discharges, which are known to occur in the field.
6.0 METAL DISCHARGE VERSUS CDM DISCHARGE

The analysis of M. Tanaka [5] is shown here to demonstrate that a metal discharge from a small
metallic object to a device is similar to the commonly used CDM test. Tanaka considers small
objects because large machines (typically >10 pF) are almost always grounded for reasons
beyond ESD, and thus pose little practical threat for these events. On the other hand, tools and
small machines are difficult to ground and may lead to charging effects where the capacitance of
the metal object is related to surface area and distance. These values can range from < 1 pF to
2
nearly 10 pF. For example, this could be as much as 1 pF for a small metal object of 10 cm at a
distance of 0.5 cm. Both the small metal discharge and the CDM discharge can be represented
by the same set of equations for I(t), and thus both can be expected to generate the same
discharge event if the values of the parameters are similar. Figure 2 illustrates the case for a
small object of 10 pF for both metal discharge and CDM discharge.
Charged metal Rd
Ld CDM discharge
Lo Rd
Ld L=Ld+Lo C L=Ld+Lo
10pF i(t)
C
10pF i(t)
Lo
This formula can be

applied to both case of the
metal discharge and CDM
discharge.
Rd
V - t
i(t)= e 2L sin ωt
ωL
1 Rd 2
ω=2πf = -
LC 4L2
Figure 2: Discharge Current Equation for Metal Discharge or CDM Discharge [4]
The above analysis is confirmed by measurements [5] as shown in Figure 3, where the discharge
in (A) from charged tweezers to an IC pin is the same as direct discharge from metal as shown in
(B), and both are similar to the generated CDM discharge in (C). The time scale for both metal
discharge and CDM discharge is indeed the same, clearly indicating that CDM is a good
representation of the metal discharge in the EPA.
4
(A) Discharge
(A) from metal to
pin-pin of
semiconductor
(C)
(C) CDM
Discharge
(B)
(B) Direct discharge from metal
Figure 3: Comparison of Measured Waveforms for Metal Discharge and CDM Discharge Events [5]
NOTE: (A) discharge from a charged tweezer on pin, (B) direct discharge from metal and (C) CDM test discharge
In summary:
 Metal discharge events are well represented by the CDM test.
 Upon analysis of the ESD field returns, in a vast majority of the cases, the damage
mechanism can be replicated with either HBM or CDM test but cannot be replicated with the
MM test. Hence, the MM test, even though it may generate some rare unique design failure
modes, does not represent field failure reliability.
The Industry Council on ESD Target Levels has studied the HBM and MM results on a wide
variety of designs in many technologies and has concluded that MM is intrinsically related to
HBM, with a correlation factor “range” that is dependent on the HBM design level [6]. This data is
represented in Figure 4. In some rare cases, due to a design issue, the relative HBM:MM ratio
could rise above this range. However, the most important conclusion of the study was that MM is
a redundant test and that a sufficient level of MM field robustness is automatically included in an
adequate HBM design. This also includes the bipolar nature of the MM stress. Any oscillatory
waveform which might be measured during discharges in the field is sufficiently covered if the
part is proven to have an adequate HBM design.
This minimum design value, as measured by a MM tester, is well above any voltage remaining on
all properly grounded machines in an ESD protected manufacturing environment. In essence,
meeting a safe value for HBM (and CDM) is sufficient for production of ICs, without needing to
evaluate MM as an additional qualification. Therefore:
 The machine model test method specification to qualify ICs does not model or
advance the real-world ESD protection of IC products.
 IC evaluation with MM does not give any additional information as to how to address
machine ESD control.
 While MM is an unnecessary qualification test, it is important to emphasize that control
of voltage on machine parts that might contact device pins in accordance with an ESD
control program, such as ANSI/ESD S20.20 [7], is still important.
5
M M Range Intrinsic to HBM
500
Maximum*
400 HBM FAR Window
MM (V)
300
Minimum*
200
100
0
500 1500 2500 3500 4500 5500
HBM (V)
Figure 4: Correlation between HBM and MM Measured on the Same Devices,

Representing More Than 95% of the Cases
7.0 FIELD DATA ANALYSIS

The work from the Industry Council [6] has shown that most of the overstress field returns exhibit
failure signatures of a higher energy EOS event, and that the level of HBM ESD from 500 volts to
2000 volts (shown as the HBM failure analysis return (FAR) window in Figure 4) for 21 billion
shipped units did not show a correlation to the customer field return rates. Similarly, these very
same shipped units (500 volts to 2 kilovolts HBM) also had MM levels in a range between
50-300 volts, as also shown in Figure 4. Therefore it can be concluded that the EOS field returns
are indeed not related to this range of intrinsic MM levels. That is, it does not matter if a shipped
device has a measured MM value of 50 volts or 300 volts.
Devices with various measured MM levels have shown no correlation to real world EOS
failure returns.
8.0 STANDARDS BODIES AND POSITIONS ON MM

During the last two decades, the electronic industry’s standards bodies have changed their
viewpoint with regard to MM and its requirement for IC qualification. At present, JEITA in Japan
does not recommend MM. The Automotive Electronics Council’s AEC Q100 standard gives a
choice between HBM and MM, but does require CDM. In recent years, JEDEC has strongly
recommended discontinuing use of MM for ESD qualification because of its test variability and
non-correlation to real-world failure modes. In general, standards bodies have come to recognize
that:
 IC Qualification to HBM and CDM provides all the necessary ESD test requirements.
 MM testing of ICs is redundant to HBM and does not reflect unique real-world component
ESD failure modes.
 Billions of IC components have been shipped worldwide and qualified using HBM and CDM
testing only. No field failures have been found that would have been prevented by additional
MM qualification.
6
The following statements are from the JEDEC web site:

 “JESD22-A115 [2] is a reference document; it is not a requirement per JESD47 [1] (Stress-
Test-Driven Qualification of Integrated Circuits).”
 “Machine model as described in JESD22-A115 [2] should not be used as a requirement for
integrated circuit ESD qualification.”
 “Only human body model (HBM) and charged-device model (CDM) are the necessary ESD
Qualification test methods as specified in JESD47 [1].”
The ESD Association has downgraded the MM document from a Standard (S5.2) to a Standard
Test Method (STM5.2) [8], and has adopted the following position:
The ESD Association does not recommend using MM ESD as described in ANSI/ESD
STM5.2 for IC qualification. IC Qualification should be done using the current standard
HBM and CDM methods.
9.0 CONCLUSIONS
The information in this document supports discontinuing MM as part of IC qualification. The most
important point to note is that a wide range of products, having only HBM and CDM testing
performed, are being shipped today at volume levels in the billions, with no field returns that could
be prevented by MM qualification. These products, passing at or above the recommended
minimum HBM and CDM levels, are being routinely shipped by major suppliers and are accepted
by major OEMs. No increase in field return rates has been observed with MM removed from
qualification for these products.
The confusion generated by MM has persisted in the industry for over two decades. The
presumed need for this test is causing additional qualification and time-to-market delays due to
an extraordinary consumption of design / test resources and, in some cases, is also having an
impact on IC speed and performance. Maintaining safe HBM and CDM levels is sufficient to meet
all IC manufacturing, handling and assembly needs.
10.0 EPILOGUE
Different customer sectors may feel that they need enhanced ESD requirements for specific
reasons. For example, some automotive customers have more consistently required MM model
testing, the assumption being that an independent and redundant test provides enhanced safety,
improved quality or reduced defectivity. However, industry experience has shown that passing a
redundant (to HBM) MM qualification test does not help automotive manufacturers achieve these
goals. Meeting current industry standard HBM / CDM will insure that a product can be safely
handled with sufficient margin to prevent ESD damage and maintain the quality/reliability of the
product as shipped from the component manufacturer. Since many suspected ESD failures turn
out to be higher energy EOS in nature, methods to prevent electrical overstress during
manufacturing will also help maintain product reliability.
11.0 COMMON GOALS

We have presented evidence and arguments that the MM test of ICs is redundant and there is no
proof that devices have failed in the field because MM evaluation was not done. We strongly
recommend that this test be discontinued for ESD qualification. This will save the semiconductor
industry a tremendous and an unnecessary burden by greatly reducing the routine
characterization that is done to support the qualification process. The ESD robustness designed
into integrated circuits to survive HBM and CDM testing will provide protection against any MM-
like stress. Eliminating MM testing of ICs has no deleterious effects and will free up resources for
more important engineering challenges.
7

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ESDA/JEDEC JTR5.

Discontinuing Use of the Machine Model for

Electrostatic Discharge Association

JEDEC Solid State Technology Association

Electrostatic Discharge Association

JEDEC Solid State Technology Association

No part of this publication may be reproduced in any form, in

Printed in the United States of America

8. MM testing consumes resources and creates time-to-market delays while providing no

1.0 SCOPE .................................................................................................................................... 1

2.0 REFERENCES ........................................................................................................................ 1

3.0 TERMS, DEFINITIONS, AND LETTER SYMBOLS ............................................................... 1

4.0 BACKGROUND ...................................................................................................................... 2

5.0. MM VS. HBM AND CDM ......................................................................................................... 3

6.0 METAL DISCHARGE VERSUS CDM DISCHARGE .............................................................. 4

7.0 FIELD DATA ANALYSIS ........................................................................................................ 6

8.0 STANDARDS BODIES AND POSITIONS ON MM ................................................................ 6

9.0 CONCLUSIONS ...................................................................................................................... 7

10.0 EPILOGUE .............................................................................................................................. 7

11.0 COMMON GOALS .................................................................................................................. 7

3.0 TERMS, DEFINITIONS, AND LETTER SYMBOLS

5.0 MM VS. HBM AND CDM

3.5kV HBM 230V MM 500V CDM

Figure 1: Comparison of HBM, MM, and CDM Waveforms

6.0 METAL DISCHARGE VERSUS CDM DISCHARGE

This formula can be

M M Range Intrinsic to HBM

Figure 4: Correlation between HBM and MM Measured on the Same Devices,

7.0 FIELD DATA ANALYSIS

8.0 STANDARDS BODIES AND POSITIONS ON MM

The following statements are from the JEDEC web site:

11.0 COMMON GOALS

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