DEC.

2011

LEL15G604_Preliminary SISPM1
600V 15A PIM(CI) IGBT Module

Features
• Trench Field Stop Technology adopted IGBT
- Low saturation voltage
- Positive temperature coeffiecient
- Fast switching
• Free wheeling diodes with fast and soft reverse recovery
• Industrial standard package with insulated substrate
• Temperature sensor included

Application
• Input from single or three phase grid SISPM1
• Three phase synchronous or asynchronous motor 82 X 37.4 X 17.1 mm
• Dynamic braking operation

Internal Equivalent Circuit

4 5

21 19 17
20 18 16
23 24 13 14 15

8 9 10
7

3 12 11 6

©2011 LS Industrial Systems, Preliminary REV 0.2

 Absolute Maximum Rating TC = 25 C unless otherwise noted

Item Symbol Description Condition Rating Unit

VRRM Repetitive peak reverse voltage IR=250uA 1600 V
IFAV Forward current per diode Tc=80℃ 28 A
IFSM Surge forward current tp=10ms, half sine wave 370 A
Input Tj=150℃, tp=10ms
Rectifier I2 t I2t-value 360 A 2s
half sine wave
PD Maximum power dissipation Tc=80℃ TBD W
Tj Operation junction temperature - -40 to + 125 °C
Rth(j-c) j-c Thermal Resistance - TBD K/W
VCE Collector-emitter breakdown voltage Tc=25℃, Ic=250uA 600 V
Tc=25℃ TBD A
IC DC collector current
Tc=100℃ TBD A
Icpuls Repetitive peak collector current tp=1ms, Tc=80℃ TBD A
Transistor PD Maximum power dissipation Tc=25℃ TBD W
Inverter VGE Gate-emitter peak voltage Continuous ±20 V
VCC = 400V, Rg = 22Ω
tsc SC withstand time 5 us
VGE = +15V to 0V
Tj Operation junction temperature - -40 to + 125 °C
Rth(j-c) j-c Thermal Resistance - TBD K/W
VRRM Repetitive peak reverse voltage Tc=25℃, IR=250uA 600 V
Tc=25℃ TBD A
IF DC forward current
Tc=100℃ TBD A
Diode
IFRM Repetitive peak forward current Tc=80℃ TBD A
Inverter
PD Maximum power dissipation - TBD W
Tj Operation junction temperature - -40 to + 125 °C
Rth(j-c) j-c Thermal Resistance - TBD K/W
Module Tstg storage temperature - -40 to +125 °C
Viso Isolation voltage @AC 1minute 2500 V
W Weight - 40 g

©2011 LS Industrial Systems, Preliminary REV 0.2

 Electrical Characteristics T C = 25C unless otherwise noted

Input Rectifier
Symbol Description Conditions Min. Typ. Max. Unit
Tc=25℃, IF=35A - 1.25 1.8 V
VF Diode forward voltage
Tc=125℃, IF=35A - 1.21 1.8 V
Tc=25℃, IF=35A - PBD - V
Vto Threshold voltage
Tc=125℃, IF=35A - PBD - V
IR Reverse current VR=1600V - - 0.05 mA
trr Diode reverse recovery current Tc=25℃, ± 1A - 20 - us

Transistor Inverter, inductive load

Symbol Description Conditions Min. Typ. Max. Unit
VGE(th) Gate-emitter threshold voltage VCE=VGE, Ic=350uA 4.0 5.0 6.5 V
Tc=25℃, Ic=15A, VGE=15V - 1.85 2.35 V
VCE(SAT) Collector-emitter saturation voltage
Tc=125℃, Ic=15A, VGE=15V - 2.20 2.70 V
ICES Collector-emitter cut-off current VGE=0V, VCE=600V - 2 125 uA
IGES Gate-emitter leakage current VGE= ± 20V, VCE=0V - - ± 100 nA
td(on) Turn-on delay time - 90 - ns
TC=25℃
tr Rise time RG(on)=40 Ohm - 45 - ns
td(off) Turn-off delay time RG(off)=20 Ohm - 152 - ns
tf Fall time VGE=15V to 0V - 55 - ns
Eon Turn-on energy loss per pulse IC=15A - 0.205 - mJ
VCC=300V
Eoff Turn-off energy loss per pulse - 0.261 - mJ
VCC = 400V, Rg = 22Ω
tSC SC withstand time - - 5 us
VGE = +15V to 0V
Cies Input capacitance - 765 - pF
VGE=0V, VCC=30V
Coss Output capacitance - 52 - pF
f=1MHz, Tc=25℃
Crss Reverse transfer capacitance - 23 - pF
Cies Input capacitance - TBD - pF
VGE=0V, VCC=30V
Coss Output capacitance - TBD - pF
f=1MHz, Tc=125℃
Crss Reverse transfer capacitance - TBD - pF
Qge Gate-to-Emitter Charge (turn-on) - 7 11 nC
Qgc Gate-to-Collector Charge (turn-on) Ic=12A, VGE=15V, VCC=400V - 11 16 nC
Qg Gate charge - 25 38 nC

Diode Inverter
Symbol Description Conditions Min. Typ. Max. Unit
Tc=25℃, IF=20A - 1.27 1.8 V
VF Diode forward voltage
Tc=125℃, IF=20A - 1.25 1.8 V
IRM Peak reverse recovery current diF/dt = 436 A/us - TBD TBD A
trr Reverse recovery current ± 9.5A, 300V, 150A/us - TBD TBD ns
Qrr Reverse recovery charge ± 9.5A, 300V, 150A/us - TBD TBD uC
Erec Reverse recovered energy diF/dt = 436 A/us - TBD TBD mJ

©2011 LS Industrial Systems, Preliminary REV 0.2

 NTC-Thermistor
Symbol Description Conditions Min. Typ. Max. Unit
R25 Rated resistance Tc=25℃ 4.2 4.7 5.3 KOhm
DR/R Deviation of R100 Tc=100℃ - 2.56 - %/K
P Power dissipation given Epcos-Typ Tc=25℃ - 210 - mW
B(25/100) B-value Tc=25℃ - 3530 - K

©2011 LS Industrial Systems, Preliminary REV 0.2

 Pin Description

Pin Number Pin Name Pin Description

1 - Not used pin
2 - Not used pin
3 DCN Negative DC Link Input
4 DCP Positive DC Link Input
5 P Positive DC Link Output
6 N Negative DC Link Output
7 COM Common Supply Ground
8 GUN Gate Input for Low-side U Phase
9 GVN Gate Input for Low-side V Phase
10 GWN Gate Input for Low-side W Phase
11 TH1 NTC-, Thermistor1
12 TH2 NTC+, Thermistor2
13 U Output for U Phase
14 V Output for V Phase
15 W Output for W Phase
16 EWP Emitter Input for High-side W Phase
17 GWP Gate Input for High-side W Phase
18 EVP Emitter Input for High-side V Phase
19 GVP Gate Input for High-side V Phase
20 EUP Emitter Input for High-side U Phase
21 GUP Gate Input for High-side U Phase
22 - Not used pin
23 R Input for S Phase
24 S Input for T Phase
25 - Not used pin

©2011 LS Industrial Systems, Preliminary REV 0.2

 Package Dimensions [Unit : mm]

©2011 LS Industrial Systems, Preliminary REV 0.2

 1. Output Inverter IGBT/DIODE

50 50
Tc=25C 20V 18V Tc=125C 20V 18V

15V 15V
40 12V 40

Collector Current, Ic [A]

Collector Current, Ic [A]

12V
30 30

Vge=10V
20 20 Vge=10V

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Fig.1 Typical Ouput Characteristics Fig.2 Typical Ouput Characteristics

50 50
VGE=15V

40 40
Forward Current, IF [A]
Collector Current, Ic [A]

Tc=25C
Tc=125C
30 30

Tc=25C Tc=125C 20
20

10 10

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0

Collector-Emitter Voltage, VCE [V] Forward Voltage, VF [V]

Fig3. Typical Transfer Characteristics Fig4. Typical Forward Current

1000 1000
Tc=25C, VCC=300V Tc=25C, VCC=300V
RG(on)=40 Ohm, RG(off)=20 Ohm RG(on)=40 Ohm, RG(off)=20 Ohm
VGE=15V ~ 0V VGE=15V ~ -15V
Switching Time, t [ns]

Switching Time, t [ns]

td_off

td_off
100 td_on 100

td_on
tf
tf

tr
tr
10 10
10 20 30 10 20 30

Collector Current, Ic [A] Collector Current, Ic [A]

Fig5. Typical Switching Time vs IC Fig6. Typical Switching Time vs IC

©2011 LS Industrial Systems, Preliminary REV 0.2
 0.6 0.6
Tc=25C, VCC=300V Tc=25C, VCC=300V Eoff
RG(on)=40 Ohm RG(on)=40 Ohm
0.5 0.5
RG(off)=20 Ohm RG(off)=20 Ohm
VGE=15V ~ 0V VGE=15V ~ -15V

Switching Loss, E [mJ]

Switching Loss, E [mJ]

0.4 0.4
Eon
0.3 0.3

0.2 0.2
Eoff

0.1 0.1
Eon
0.0 0.0
10 20 30 10 20 30

Collector Current, Ic [A] Collector Current, Ic [A]

Fig7. Typical Switching Loss vs IC Fig8. Typical Switching Loss vs IC

0.8 0.8
Tc=25C Tc=25C
0.7 RG(on)= 40 Ohm 0.7 RG(off)=20 Ohm
VGE=15V ~ 0V VGE=15V ~ 0V
Switching Loss, Eoff [mJ]

420V
0.6 0.6
Switching Loss, Eon [mJ]

420V
0.5 0.5
360V 360V
0.4 0.4
VCE=300V
VCE=300V 0.3
0.3

0.2 0.2

0.1 0.1

0.0 0.0
10 20 30 10 20 30

Collector Current, Ic [A] Collector Current, Ic [A]

Fig9. Typical Switching Loss(Eon) vs IC Fig10. Typical Switching Loss(Eoff) vs IC

1000 1000
Tc=25C Tc=25C
Ic=15A, VCC=300V Ic=15A, VCC=300V
VGE=15V ~ 0V td_off VGE=15V ~ -15V
Switching time, t [ns]
Switching time, t [ns]

td_off
td_on
td_on
100 100
tr tr

tf
tf

10 10
50 100 150 50 100 150

Gate Resistor, RG [Ohm] Gate Resistor, RG [Ohm]

Fig11. Typical Switching Time vs RG Fig12. Typical Switching Time vs RG

©2011 LS Industrial Systems, Preliminary REV 0.2

 0.6 0.6
Tc=25C Tc=25C
Ic=15A, VCC=300V Ic=15A, VCC=300V
0.5 VGE=15V ~ 0V Eon 0.5 VGE=15V ~ -15V
Switching Loss, E [mJ]

Switching Loss, E [mJ]

0.4 Eoff Eon
0.4

0.3 0.3
Eoff
0.2 0.2

0.1 0.1

0.0 0.0
50 100 150 50 100 150
Gate Resistor, RG [Ohm] Gate Resistor, RG [Ohm]

Fig13. Typical Switching Loss vs RG Fig14. Typical Switching Loss vs RG

2. Rectifier DIODE

60

50
Forward current, IF [A]

40

30 Tc=125C
Tc=25C

20

10

0
0.0 0.5 1.0 1.5

Forward Voltage, VF [V]

Fig 15. Typical Transfer Characteristics

©2011 LS Industrial Systems, Preliminary REV 0.2