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    UG1006

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    Dirson Volmir Willig
    This document summarizes specifications for a series of ultra fast glass passivated rectifiers made by Lite-On Semiconductor. The rectifiers come in models UG1001 through UG1007, with reverse voltage ratings ranging from 50 to 1000 volts. Key features include low forward voltage drop, high current capability, and fast switching for high efficiency. Electrical characteristics include maximum forward current of 1 amp, reverse leakage current under 5 microamps, and reverse recovery times under 75 nanoseconds.

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    UG1006

    Uploaded by

    Dirson Volmir Willig
    23 views2 pages
    This document summarizes specifications for a series of ultra fast glass passivated rectifiers made by Lite-On Semiconductor. The rectifiers come in models UG1001 through UG1007, with reverse voltage ratings ranging from 50 to 1000 volts. Key features include low forward voltage drop, high current capability, and fast switching for high efficiency. Electrical characteristics include maximum forward current of 1 amp, reverse leakage current under 5 microamps, and reverse recovery times under 75 nanoseconds.

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    UG1006

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    This document summarizes specifications for a series of ultra fast glass passivated rectifiers made by Lite-On Semiconductor. The rectifiers come in models UG1001 through UG1007, with reverse voltage ratings ranging from 50 to 1000 volts. Key features include low forward voltage drop, high current capability, and fast switching for high efficiency. Electrical characteristics include maximum forward current of 1 amp, reverse leakage current under 5 microamps, and reverse recovery times under 75 nanoseconds.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    23 views2 pages

    UG1006

    Uploaded by

    Dirson Volmir Willig
    This document summarizes specifications for a series of ultra fast glass passivated rectifiers made by Lite-On Semiconductor. The rectifiers come in models UG1001 through UG1007, with reverse voltage ratings ranging from 50 to 1000 volts. Key features include low forward voltage drop, high current capability, and fast switching for high efficiency. Electrical characteristics include maximum forward current of 1 amp, reverse leakage current under 5 microamps, and reverse recovery times under 75 nanoseconds.

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    of 2

    LITE-ON

    SEMICONDUCTOR UG1001 thru UG1007

    ULTRA FAST REVERSE VOLTAGE - 50 to 1000 Volts


    GLASS PASSIVATED RECTIFIERS FORWARD CURRENT - 1.0 Ampere

    FEATURES DO-41
    Glass passivated chip
    Ultra fast switching for high efficiency A B A

    Low reverse leakage current


    Low forward voltage drop C
    High current capability D
    Easily cleaned with Freon, Alcohol, Chlorothene and
    similar solvents
    Plastic material has UL flammabitily classification
    94V-0

    DO-41
    MECHANICAL DATA Dim. Min. Max.
    A 25.4 -
    Case : JEDEC DO-41 molded plastic
    B 4.10 5.20
    Polarity : Color band denotes cathode
    C 0.71 0.86
    Weight : 0.012 ounces, 0.34 grams 2.00 2.70
    D
    Mounting position : Any All Dimensions in millimeter

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


    Ratings at 25℃ ambient temperature unless otherwise specified.
    Single phase, half wave, 60Hz, resistive or inductive load.
    For capacitive load, derate current by 20%

    CHARACTERISTICS SYMBOL UG1001 UG1002 UG1003 UG1004 UG1005 UG1006 UG1007 UNIT

    Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
    Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
    Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
    Maximum Average Forward
    I(AV) 1.0 A
    Rectified Current @TA=55 C
    Peak Forward Surge Current
    8.3ms single half sine-wave IFSM 30 A
    super imposed on rated load (JEDEC Method)
    Maximum forward Voltage at 1.0A DC VF 1.0 1.3 1.7 V
    Maximum DC Reverse Current @TJ=25 C 5
    at Rated DC Blocking Voltage
    IR uA
    @TJ=100 C 100
    Maximum Reverse Recovery Time (Note 1) TRR 50 75 ns

    Typical Junction
    CJ 20 10 pF
    Capacitance (Note 2)

    Typical Thermal Resistance (Note 3) R0JA 40 C/W

    Storage / Operating Temperature Range TSTG ,TJ -55 to +150 C

    NOTES : 1.Test condition of TRR:IF=0.5A,IR=1.0A,IRR=0.25A. REV. 2, 01-Dec-2000, KDFC01


    2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
    3.Thermal Resistance Junction to Ambient.
    RATING AND CHARACTERISTIC CURVES
    UG1001 thru UG1007

    FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

    PEAK FORWARD SURGE CURRENT,


    1.0
    AVERAGE FORWARD CURRENT

    40

    0.8
    30

    AMPERES
    AMPERES

    0.6
    20
    0.4

    0.2 10
    Pulse width 8.3ms
    Single Half-Sine-Wave
    SINGLE PHASE HALF WAVE 60Hz (JEDEC METHOD)
    RESISTIVE OR INDUCTIVE LOAD
    0.1 0
    25 50 75 100 125 150 175 1 2 5 10 20 50 100

    AMBIENT TEMPERATURE , C NUMBER OF CYCLES AT 60Hz

    FIG.3 - TYPICAL JUNCTION CAPACITANCE FIG.4 - TYPICAL FORWARD CHARACTERISTICS


    100 100
    INSTANTANEOUS FORWARD CURRENT ,(A)
    CAPACITANCE , (pF)

    UG1001 to UG1004
    10 UG1001 to UG1004
    UG1004
    10

    UG1005 to UG1007

    1.0 UG1005 to UG1007

    TJ = 25 C
    TJ = 25 C, f = 1MHz PULSE WIDTH 300us
    1.0 0.1
    1 4 10 100 1.2 1.4 1.6
    0.2 0.4 0.6 0.8 1.0 1.8 2.0
    REVERSE VOLTAGE , VOLTS INSTANTANEOUS FORWARD VOLTAGE , VOLTS

    REV. 2, 01-Dec-2000, KDFC01

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