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2 SC 4468

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JMnic Product Specification

Silicon NPN Power Transistors 2SC4468

DESCRIPTION
・With TO-3PN package
・Complement to type 2SA1695

APPLICATIONS
・Audio and general purpose

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta=℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 200 V

VCEO Collector-emitter voltage Open base 140 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 10 A

IB Base current 4 A

PC Collector power dissipation TC=25℃ 100 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon NPN Power Transistors 2SC4468

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 140 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.5 V

ICBO Collector cut-off current VCB=200V; IE=0 10 μA

IEBO Emitter cut-off current VEB=6V; IC=0 10 μA

hFE DC current gain IC=3A ; VCE=4V 50 180

COB Output capacitance IE=0 ; VCB=10V,f=1MHz 250 pF

fT Transition frequency IC=0.5A ; VCE=12V 20 MHz

Switching times

ton Turn-on time 0.24 μs

IC=5A;RL=12Ω
ts Storage time IB1=- IB2=0.5A 4.32 μs
VCC=60V

tf Fall time 0.40 μs

‹ hFE Classifications

O P Y

50-100 70-140 90-180

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JMnic Product Specification

Silicon NPN Power Transistors 2SC4468

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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JMnic Product Specification

Silicon NPN Power Transistors 2SC4468

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