DH 315

MICROWAVE SILICON COMPONENTS
Contents

CONTENTS
CONTENTS
INTRODUCTION / SYMBOLS
PIN DIODES
SCHOTTKY DIODES
TUNING VARACTORS DIODES
POWER GENERATION DIODES
MOS CAPACITORS
CASE STYLES
SALES OFFICES WEB SITE: http://www.tekelec-temex.com
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AMERICA: +1 (602) 780 1995 / ASIA PACIFIC: +852 2813 9826 / EUROPE: +33 (0) 1 49 88 49 00 / AFRICA: +33 (0) 1 49 88 49 00
BELGIUM: +32 (0) 2 715 90 20 GERMANY: +49 (0) 89 51 64-0 NORDIC: +46 (0) 8 590 303 00 NL: +31 (0) 79 3461430
FRANCE: +33 (0) 1 49 88 49 00 ITALY: +39 (0) 2 58 01 91 06 SPAIN: +34 (0) 1 320 41 60 UK: (44) 1256 883340
Introduction
INTRODUCTION
This part of the Microwave section presents TEKELEC TEMEX’s product lines including:
• receiving diodes
• control diodes
• tuning varactors
• multiplier varactors
• step recovery diodes
• high voltage PIN diodes
TEKELEC TEMEX’s products are available in a complete assortment of packages including:
• chips
• standard
• surface mount ceramic and plastic
• non magnetic
• custom
IN-HOUSE PRODUCTION
The silicon slice is the in-house starting point of TEKELEC TEMEX’s product manufacturing. From the
virgin wafer, TEKELEC TEMEX performs all functions, including:
• epitaxy
• diffusion
• photomasking
• metallization
• passivation
• dicing
• packaging
• control and burn-in
TEKELEC TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky
metallurgies, all junction passivations, and all mesa operations.

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AMERICA: +1 (602) 780 1995 / ASIA PACIFIC: +852 2813 9826 / EUROPE: +33 (0) 1 49884900 / AFRICA: +33 (0) 1 49884900
BELGIUM: +32 (0) 2 7159020 GERMANY: +49 (0) 895164-0 NORDIC: +46 (0) 8 590 303 00 NL: +31 (0) 793461430
FRANCE: +33 (0) 1 49884900 ITALY: +39 (0) 2 58 01 91 06 SPAIN: +34 (0) 1 3204160 UK: (44) 1256 883340
Symbols
SYMBOLS
Cb .................................... Case Capacitance
Cj .................................... Junction Capacitance
CT .................................... Total Capacitance
CX/Cy .................................... Tuning Ratio
f .................................... Test Frequency
FCO .................................... Cut-off Frequency
FI .................................... Frequency Input
FIF .................................... Intermediate Frequency
FO .................................... Output Frequency
Foper .................................... Operating frequency
IF .................................... Forward Continuous Current
IR .................................... Reverse Continuous Current
I RP .................................... Reverse Pulse Current
L .................................... Conversion Loss
N/A .................................... Not Applicable
NFSSB .................................... Single Sideband Noise Figure
NFIF .................................... Noise Figure of Intermediate Frequency
∅ .................................... Gold Contact Diameter
PCW .................................... CW Power Capability
Pdiss .................................... Power Dissipation
Pin .................................... Power Input
PL .................................... Limiting Threshold
PLO .................................... Local Oscillator Power
PO .................................... Output Power
PRF .................................... RF Power
Q-X .................................... Figure of Merit
RSF .................................... Forward Series Resistance
Rth .................................... Thermal Resistance
RV .................................... Video Resistance
τI .................................... Minority Carrier Lifetime
TCR .................................... Reverse Switching Time
Tj .................................... Junction Temperature
tSO .................................... Snap-off Time
TSS .................................... Tangential Sensitivity
VBR .................................... Breakdown Voltage
VF .................................... Forward Continuous Voltage
VR .................................... Applicable Voltage (RF + bias)
VSWR .................................... Voltage Standing Wave Ratio
VT .................................... Forward Threshold Voltage
VTO .................................... Threshold Voltage
ZIF .................................... Impedance at Intermediate Frequency
ZO .................................... Output Impedance
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SILICON PIN DIODES
Selection guide
SILICON PIN DIODES
Selection Guide
SURFACE MOUNT PACKAGE

PLASTIC PACKAGE SWITCHING SILICON PIN DIODES
PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES
SQUARE SURFACE MOUNT PIN DIODES
HIGH VOLTAGE SQUARE SURFACE MOUNT PIN DIODES
NON MAGNETIC SQUARE SURFACE MOUNT PIN DIODES
HIGH VOLTAGE PIN DIODES

SWITCHING & PHASE SHIFTING APPLICATIONS
TWO AND THREE PORTS RF PIN SWITCH MODULES
MICROWAVE APPLICATIONS
ULTRAFAST SWITCHING SILICON PIN DIODES
FAST SWITCHING SILICON PIN DIODES
ATTENUATOR SILICON PIN DIODES
SILICON LIMITER PIN DIODES

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SILICON PIN DIODES
How to specify a PIN diode
HOW TO SPECIFY A PIN DIODE
To obtain the PIN diodes best suited for a specific application, consider the following:
1. Application 8. Maximum loss expected

• switch
• attenuator 9. Minimum isolation needed
• limiter
10. VSWR and distortion requirements
2. Frequency and bandwidth requirements
11. Power applied to the diode
3. Power characteristics • forward biased
• peak • reverse biased
• average • during switching
• pulse duration and duty cycle
12. Static characteristics
4. Switching time
• applicable voltage: V R
5. Bias conditions • total capacitance: C T
• forward
(in space charge)
• reverse
• forward series resistance: R SF
6. Circuit impedance • carrier lifetime τl
• thermal resistance: R th
7. Shunt or series assembly
13. Mechanical and packaging constraints

1-5
SILICON PIN DIODES
SOT23 surface mount switching silicon PIN diodes
SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES
Features Description
• Low series resistance TEKELEC TEMEX uses its proprietary

technology to manufacture its Silicon PIN
• Low capacitance diodes in SOT23.
This product family is designed for a low cost,
• Fast switching diodes
medium to high volume market that may be
• Surface mount package supplied in tape and reel for automated pick
and place assembly on surface mount circuit
• Tape and reel packaging available boards.
The use of this technology eliminates wire
bonding directly on to the chips.
Outline drawing Applications
The DH50XXX series PIN diodes are offered in

large selection of capacitance range (.30 pF to
1.2 pF) and breakdown voltage (35 V to 200 V).
They provide low loss (low series resistance),
-51 -52 low switching time and low switching current.
TEKELEC TEMEX’s components are designed to
cover a broad range of CW low power (up to
2 W), medium peak power, RF and microwave
applications (up to 3GHz).
Main applications include: SPST and SPDT
switches, antenna (Wireless Communication
-53 -54 Systems) and filter switches, Phase Shifters…
Note: To reduce the distortion, it is necessary to

verify and design with the following formula :
ÎHF
-55 -56 << 1
πτl IDC F
(Top view)
ÎHF : RF peak current (A)
τl : Diode minority carrier lifetime(s)
IDC : DC bias current (A)
Nota: Other plastic packages available. F : Application frequency (Hz)

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SILICON PIN DIODES
SOT23 surface mount switching silicon PIN diodes
Electrical characteristics at 25° C
PACKAGED DIODES
Breakdown Total Series Minority Carrier
Voltage capacitance Resistance lifetime
VBR (1) CT (2) RSF τI
F = 1 MHz IF = 10 mA IF = 10 mA
Test conditions IR = 10 µA
VR = 50 V F = 120 MHz IR = 6 mA
Type (3) V pF Ω ns
min max max typ.
DH50051-XX 35 0.3 (5) 2.5 (4) 150
DH50058-XX 35 1 (5) 0.5 200
DH50053-XX 50 0.35 (6) 1.5 200
DH50103-XX 100 0.35 3 1000
DH50109-XX 100 1.2 0.6 1000
DH50203-XX 200 0.35 3 1000
(1) : Other breakdown value on request (4) : RSF at IF = 5 mA

(2) : other capacitance values on request (5) : VR = 5 V at F = 1 MHz
(3) : -XX Digits for internal electrical configuration (6) : VR = 20 V at F = 1 MHz
Temperature ranges:
Operating junction (Tj) : -55° C to +150° C

Storage : -65° C to +150° C
Case style
min max min max

Symbol
Millimeters Millimeters Inches Inches
K 0.1 0.13 0.004 0.005
J 0.53 0.56 0.021 0.022
I 0.05 0.1 0.002 0.0004
H 1.07 1.14 0.042 0.045
G 0.43 0.46 0.017 0.018
F 1.78 2.04 0.070 0.080
E 0.94 typ. 0.037 typ.
D 0.43 0.45 0.017 0.020
C 2.36 2.49 0.093 0.098
B 1.3 1.35 0.051 0.053
A 2.84 3.02 0.112 0.119

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SILICON PIN DIODES
Surface mount attenuating silicon PIN diodes
SURFACE MOUNT ATTENUATING SILICON PIN DIODES
• Large dynamic range TEKELEC TEMEX uses its proprietary

technology to manufacture its Silicon chips in
• Low harmonic distortion SOT23.
This products family is designed for a low cost
• High minority carrier lifetime
medium to high volume market that may be
• Surface mount package supplied in tape and reel for automated pick
and place assembly on surface mount circuit
• Tape and reel packaging available boards.
The use of this technology eliminates wire
bonding directly on to the chips.
Typical applications include variable RF

attenuators and AGC (Automatic Gain Control)
circuits, from MHz to several GHz. The
attenuating PIN diode uses properties of
-51 -52 variation of forward series resistance versus the
DC forward bias current. In order to obtain the
best dynamic range, a single diode attenuator
may be used in series or shunt configuration or
designed as a multiple diode circuit (T or π
circuit), where the device may be matched
through the attenuation range.
-53 -54
Note: To reduce the distortion, it is necessary to

verify and design with the following formula :
ÎHF
<< 1
-55 -56
πτl IDC F
(Top view) ÎHF : RF peak current (A)

τl : Diode minority carrier lifetime(s)
IDC : DC bias current (A)
Nota: Other plastic packages available. F : Application frequency (Hz)

1-8
SILICON PIN DIODES
Surface mount attenuating silicon PIN diodes
I Zone Junction Reverse Carrier

Electrical Series
thickness capacitance current lifetime
Parameters Resistance
(1) Cj (2) IR τI
IF = 10 mA
Test conditions µm F = 120 MHz F = 1 MHz VR = 100 V
IR = 6 mA
IF = 0.1 mA IF = 1 mA IF = 10 mA pF µA µs
Type (3)
typ. min max min max min max typ. max max typ.
DH40141-XX 140 400 800 50 100 6.5 13.0 0.05 0.10 10 2.5
DH40144-XX 140 200 400 25 50 3.5 7.0 0.10 0.30 10 5
DH40225-XX(4) 220 400 800 50 100 6.5 13.0 0.10 0.30 10 7
(1) Other I zone thicknesses on request

(2) Other capacitance values on request
(3) -XX digits for internal electrical configuration
(4) New products, please call your local sales offices.
Temperature ranges:
Operating juction (Tj) : - 55° C to + 150° C

Storage : - 65° C to + 150° C
Typical performance curve

1-9
SILICON PIN DIODES
Low cost square ceramic package PIN diodes
LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
• Low loss, low distortion TEKELEC TEMEX is manufacturing a square PIN

diode for surface mount applications. The chip
• Low inductance inside is passivated to ensure high reliability
and very low leakage current. These diodes
• High reliability ensure high power switching at frequencies
from HF to few GHz. This package utilizes
• Hermetically sealed package ceramic package technology with low
inductance and leadless faced package. The
• Non rolling MELF design design simplifies automatic pick and place
indexing and assembly. The termination
• Pick and place compatibility contacts are tin plated for vapor or reflow circuit
board soldering. The active area is a PIN glass
passivated chip which can be designed to
customer specifications.
Pinning Outline drawing
Millimiters Inches
Package Symbol min max min max
A 2 2.3 .079 .091
SMD4 B 2.9 3.5 .114 .138
C 0.3 0.8 .012 .031
A 2.5 2.8 .098 .0110
SMD6 B 4.7 5.2 .185 .205
C 0.3 0.8 .012 .031
A 3.50 3.81 .138 .150
SMD8 B 4.70 5.2 .185 .205
C 0.20 0.38 .008 .015

1-10
SILICON PIN DIODES
Low cost square ceramic package PIN diodes
Applications
TEKELEC TEMEX square ceramic diodes are particularly suitable for high volume tape and reel
assembly. Several values of total capacitance are available, together with a low forward series
resistance. These components are designed to meet the low distortion specification required by all the
mobile radio applications. Due to the specific design, these devices offer low loss and low thermal
resistance performance and are characterized for high power handling. The electrical properties are
ideal for use in antenna switches, filters, phase shifters, in all mobile radio applications from few MHz
to GHz frequencies.
Applicable Total Forward Minority

Electrical Power
Package voltage capacitance series resistance carrier
Parameter dissipation
V CT RSF lifetime
τI
f = 1 MHz f = 120 MHz IF = 10 mA Contact
Test conditions IR < 10 µA
VR = 50 V IF = 50 mA IR = 6 mA surface (1)
V pF Ω µs W
Type Type
max typ. max typ. max min max
SQM1050 SMD4 (2) 50 0.6 0.7 0.7 0.9 1 3.0
SQM1150 SMD4 200 1 1.2 0.25 0.35 1 3.0
SQM1250 SMD4 50 0.9 1.2 0.5 0.75 2 4.0
SQM1350 SMD4 (2) 50 1.5 1.7 0.4 0.6 3.5 4.5
SQM1450 SMD8 50 1.8 2.5 0.5 0.75 5 8.0
(1) diode brazed on infinite copper heat sink at 25° C

(2) standard package SMD4 also available in SMD6
Temperature ranges:
Operating junction (T j) : -55° C to +150° C

Soldering : 230° C 5 Sec.

1-11
SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES
Description
These PIN diodes are manufactured in a square package (SMD) for surface mount applications. These
packages utilize ceramic package technology with low inductance and axial terminations. This design
simplifies automatic pick and place indexing and assembly. The termination contacts are tin lead
plated for vapour or reflow circuit board soldering on Printed Circuit Boards.
These diodes are particularly suited for applications in frequency hopping radios, low loss, low
distorsion, and filters in HF, VHF and UHF frequencies.
Electrical characteristics
Applicable Break- Forward Series Minitory Max Power

Characteristics Total Capacitance
Voltage down Resistance Carrier Dissipation
at 25° C
V VBR CT RSF τI 25° C
TEST I < 10 µA I < 10 µA f = 1 MHz f = 120 MHz IF = 10 mA CONTACT FREE AIR
CONDITIONS VR = 50 V IF IR = 6 mA SURFACE (2)
(1)
TYPE (3) V V pF Ω max µs W W
max typ. typ. max I=100mA I=200mA min max max
DH80050-XX 500 550 0.40 0.45 0.70 0.65 1.1 3.0 1.2
DH80051-XX 500 550 0.55 0.65 0.60 0.55 1.5 3.5 1.2
DH80052-XX 500 550 0.85 1.05 0.40 0.35 2.0 4.0 1.2
DH80053-XX 500 550 1.05 1.20 0.35 0.30 2.5 4.0 1.5
DH80054-XX 500 550 1.25 1.35 0.30 0.27 3.0 4.5 1.5
DH80055-XX 500 550 1.45 1.55 0.25 0.22 3.5 4.5 1.5
(1) Diode brazed on infinite copper heat sink Temperature ranges:

(2) Diode brazed on epoxy circuit (PCB) Operating Junction (Tj) : -55° C to +175° C
(3) - XX digits for package Storage : -65° C to +125° C
- 06 = SMD4 and - 20 = SMD6
Series Resistance vs. Forward Current Series Resistance vs. Forward Current

1-12
SILICON PIN DIODES
Non magnetic square ceramic package 500 volts PIN diodes
NON MAGNETIC SQUARE CERAMIC PACKAGE

500 VOLTS PIN DIODES
• Non magnetic package TEKELEC TEMEX is manufacturing a non

magnetic square PIN diode for surface mount
• Low loss, low distortion applications. The properties of non magnetism
prevent interference in the magnetic field of the
• Low inductance
imaging system. The chip inside is passivated
• High reliability to ensure high reliability and very low leakage.
These diodes ensure high power switching at
• Hermetically sealed package frequencies from 1 MHz to several GHz. This
package utilizes ceramic package technology
• Glass passivated PIN diode chip with low inductance and axial terminations. The
design simplifies automatic pick and place
• Non rolling MELF design indexing and assembly. The termination
contacts are tin plated for vapor or reflow circuit
• Pick and place compatibility
board soldering. The active area is a PIN high
power glass passivated chip which can be
designed to customer specifications.
Pinning Outline drawing

1-13
SILICON PIN DIODES
Non magnetic square ceramic package 500 volts PIN diodes
Applications Maximum ratings
TEKELEC TEMEX non magnetic SQP diodes are OPERATING SOLDERING

particularly suitable for Magnetic Resonance STORAGE
JUNCTION
Imaging applications. The maximum operating
breakdown voltage is 550 V. Several values of - 55° C - 55° C 230° C 5 sec.
total capacitance are available (beginning at
0.40 pF), together with a low forward series + 175° C + 125° C
resistance.
These devices are characterized for high power
handling, low loss and low distortion (long
carrier lifetime design). The electrical properties
are ideal for use in RF coils which must produce
a homogeneous electromagnetic field in the
MRI system for frequencies from a few MHz to
over 100 MHz.
STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS

PACKAGED DIODES
Minitory
Characteristics Applicable Breakdown Total Capacitance Forward Series Power
Carrier
at 25° C Voltage Voltage Resistance Dissipation
Lifetime
V VBR CT RSF τI
Test IR < 10 µa Ir < 10 µa f = 1 MHz f = 120 MHz IF = 10 mA Contact
Conditions VR = 50 V IF as below IR = 6 mA Surface (1)
TYPE V V pF Ω max µs W
max typ. typ. max IF=100mA IF=200mA min max
DH80050-40 500 550 0.40 0.45 0.70 0.65 1.1 3.0
DH80051-40 500 550 0.55 0.65 0.60 0.55 1.5 3.5
DH80052-40 500 550 0.85 1.05 0.40 0.35 2.0 4.0
DH80053-40 500 550 1.05 1.20 0.35 0.30 2.5 4.0
DH80054-40 500 550 1.25 1.35 0.30 0.27 3.0 4.5
DH80055-40 500 550 1.45 1.55 0.25 0.22 3.5 4.5
(1) diode brazed on infinite copper heat sink

1-14
SILICON PIN DIODES
High voltage PIN diodes
HIGH VOLTAGE PIN DIODES
Applications Characteristics
These devices are most often used to control The controlling element of a PIN diode is its
Radio Frequency (RF) and microwave signals. Intrinsic (l) layer. The diode itself is a sandwich,
Typically, high-voltage PIN diodes are found in i.e. a high resistivity l layer between highly
high power switches and phase shifters. doped layers of P and N materials. With
negative bias on the l layer, the PIN diode
TEKELEC TEMEX’s high-voltage PIN diode exhibits very high parallel resistance, e.g. acting
products are designed for very high reliability, as a switch in the OFF position. A positive bias
high power handling capabilities, high causes the diode to conduct, with very low
isolation, and low signal distortion, especially in series resistance. Certain applications impose
the HF and VHF bands. High-power multithrow specific objectives on diode construction (e.g. in
switch modules are available for frequencies in the HF and VHF band, low signal distortion can
the 1 MHz to 1 GHz range. be achieved with high Minority Carrier
Lifetime τl).
All high-voltage PIN diode products can be
configured on chips or in various packages: e.g.
series, shunt, flat mount, stud mount, surface
mount (SMD) and (on request) non-magnetic.

1-15
SILICON PIN DIODES
Silicon PIN diodes for switching & phase shifting applications

(medium & high power)
Description
This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltages, junction
capacitances, and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-magnetic packages.
CHIP DIODES CHIP AND PACKAGED DIODES

Break-
Applicable Junction Forward Series Minitory
Characteristics Chip
Voltage down Capacitance Resistance Carrier
at 25°C Dimensions
VR VBR Cj (1) RSF Lifetime
τI
VR = 50 V f = 120 MHz IF = 10mA
Test Conditions N/A I < 10µA I < 10µA
f = 1 MHz IF AS SHOWN IR = 6mA
TYPE µm typ. V V pF Ω MAX µS
PIN Gold dia per side min typ. typ. max IF = 100 mA IF = 200 mA min
EH80050 0.13 0.6 500 550 0.15 0.20 0.70 0.65 1.1
EH80051 0.15 0.6 500 550 0.30 0.40 0.60 0.55 1.5
EH80052 0.25 0.8 500 550 0.60 0.70 0.40 0.30 2.0
EH80053 0.27 0.8 500 550 0.80 0.90 0.30 0.25 2.5
EH80055 0.34 0.9 500 550 1.2 1.3 0.25 0.22 3.0
EH80080 0.13 0.8 800 850 0.15 0.20 0.80 0.70 2.0
EH80083 0.27 0.9 800 850 0.80 0.90 0.40 0.30 3.0
EH80086 0.55 1.4 800 850 1.4 1.7 0.35 0.28 5.0
EH80100 0.23 0.9 1000 1100 0.30 0.40 0.70 0.60 3.0
EH80102 0.30 0.9 1000 1100 0.60 0.75 0.40 0.35 4.0
EH80106 0.55 1.4 1000 1100 1.40 1.70 0.35 0.30 7.0
VR = 100V IF = 200 mA IF = 300 mA
EH80120 0.25 0.9 1200 1300 0.30 0.40 0.60 0.55 6.0
EH80124 0.65 1.5 H (2) 1200 1300 1.00 1.20 0.45 0.35 10.0
EH80126 0.75 1.7 H (2) 1200 1300 1.40 1.70 0.40 0.30 12.0
EH80129 1.25 2.2 1200 1300 2.00 2.30 0.30 0.25 15.0
EH80154 0.65 1.5 1500 1600 1.00 1.20 0.45 0.35 10.0
EH80159 1.25 2.2 1500 1600 2.00 2.30 0.30 0.25 15.0
VR = 200V IF = 200 mA IF = 300 mA
EH80182 0.75 1.5 1800 1900 0.60 0.80 0.60 0.50 12.0
EH80189 1.4 2.6 H (2) 1800 1900 2.00 2.40 0.35 0.30 18.0
EH80204 0.85 1.7 2000 2100 1.00 1.30 0.50 0.40 14.0
EH80209 1.4 2.6 H (2) 2000 2100 2.00 2.40 0.35 0.30 18.0
EH80210 1.5 3 H (2) 2000 2100 3.00 3.40 0.20 0.15 25.0
(1) Other capacitance values available on request

(2) Hexagonal chips (between opposite flats)

1-16
SILICON PIN DIODES
PACKAGED DIODES
THERMAL TYPICAL OPERATING
RESISTANCE CONDITIONS
RTH (4)
TYPE STANDARD CASE (3)
VSWR < 1.5
PDISS = 1 W Z0 = 50 Ω
CHIP CONFIGURATION
°C/W FREQUENCY POWER
PIN Shunt Isolated stud Flat mounted max MHz W
DH80050 F 27d BH301 BH202 20.0 50 - 20000 50
DH80051 F 27d BH301 BH202 18.0 30 - 15000 80
DH80052 F 27d BH301 BH202 15.0 20 - 10000 100
DH80053 F 27d BH301 BH202 12.0 20 - 3000 100
DH80055 F 27d BH301 BH202 10.0 10 - 1000 250
DH80080 F 27d BH301 BH202 18.0 50 - 20000 60
DH80083 F 27d BH301 BH202 12.0 20 - 10000 80
DH80086 BH35 BH301 BH202 8.0 10 - 500 200
DH80100 F 27d BH301 BH202 15.0 20 - 10000 80
DH80102 F 27d BH301 BH202 12.0 20 - 3000 100
DH80106 BH35 BH300 BH202 5.5 10 - 500 500
DH80120 F 27d BH301 BH202 15.0 10 - 8000 100

DH80124 BH35 BH300 BH200 8.0 10 - 2000 250
DH80126 BH35 BH300 BH200 6.0 10 - 500 500
DH80129 BH141 BH300 BH200 4.5 5 - 200 1000
DH80154 BH141 BH300 BH200 8.0 10 - 2000 250
DH80159 BH141 BH300 BH200 4.5 5 - 200 1000
DH80182 BH35 BH300 BH200 10 10 - 50

DH80189 BH141 BH300 BH200 4.5 15 - 200 1000
DH80204 BH141 BH300 BH200 8.0 10 - 1000 250
DH80209 BH141 BH300 BH200 4.5 1.5 - 200 1000
DH80210 BH141 BH300 BH200 2.5 1.5 - 50 1000
(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink
Temperature ranges: Operating junction (T j): -55° C to +175° C Storage: -65° C to +200° C
1-17
SILICON PIN DIODES
Two & three port RF PIN switch modules
Description
This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family,
to achieve very low loss and distortion.
Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.
CHARACTERISTICS FREQUENCY LOSS ISOLATION INPUT POWER SUGGESTED BIAS

AT 25°C RANGE CONDITIONS
L I Pin
f (MHz) f (MHz)
TEST CONDITIONS N/A CW FORWARD REVERSE
IF (mA) VR (V)
Switch
Type Case MHz dB dB W mA V
Type
(1) (2) typ. max min max typ. typ.
200 MHz 100 MHz
100 mA 0V
SH90101 TO39 SP2T 10 - 600 0.35 35 10 100 50
SH91101 TO39 SP2T 10 - 600 0.35 35 10 100 50
400 MHz 200 MHz
100 mA 0V
SH90103 BH203 SP2T 20 - 1000 0.35 25 100 200 150
SH91103 BH203 SP2T 20 - 1000 0.35 25 100 200 150
SH92103 BH204 SP3T 20 - 1000 0.35 25 100 200 150
SH93103 BH204 SP3T 20 - 1000 0.35 25 100 200 150
100 MHz 200 mA
200 mA 100 V
SH91107 BH403a SP2T 20 - 500 0.20 33 1000 400 600
10 MHz 10 MHz
200 mA 200 V
SH90207 BH405 SP2T 1.5 - 50 0.15 37 1000 1000 700
SH91207 BH405 SP2T 1.5 - 50 0.15 37 1000 1000 700
(1) Series 90 and 92 : common anode (2) Custom configurations available on request
Series 91 and 93 : common cathode
Temperature ranges:
Operating juction (T j) : - 55° C to + 150° C
Storage : - 65° C to + 175° C

1-18
SILICON PIN DIODES
Internal wiring diagrams Typical performances
INSERTION LOSS AND ISOLATION

VERSUS FREQUENCY
common common
anode cathode
BOTTOM
VIEW
SH90101 SH91101
SH90103 SH91103
SH92103 SH93103
SH91107
bias bias bias bias
SH90207 SH91207

1-19
SILICON PIN DIODES
Microwave applications
MICROWAVE APPLICATIONS
Low and medium voltage PIN diode applications
The most common uses of these devices are: fast switching, attenuation and limiting. They operate at
frequencies from a few MHz to 100 GHz.
In switching applications, e.g. timing digital bit streams, these PIN diodes support signal power levels
below 30 W, up to 100 GHz. Thin I layers, from 1 to 50 µm, and passivated mesa technology in chip
configurations, yield very low junction capacitance (Cj), i.e. below 0.025 pF.
As attenuators, e.g. in Automatic Gain Control (AGC) circuits, these PIN diodes are manufactured with
a proprietary technology. This technology optimises the relationship between Cj and RSF (Forward
Series Resistance), offering a high Minority Carrier Lifetime τl, which minimises signal distortion.
In limiting applications, e.g. passive protection for receivers, these PIN diodes operate as power
dependent variable resistors.

1-20
SILICON PIN DIODES
Ultrafast switching silicon PIN diodes
Description
For ultrafast switching, these passivated mesa diodes have a thin I layer (< 10 µm).
CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES

Characteristics Gold Breakdown Junction Series Minority Reverse Thermal
at 25°C Dia Voltage Capacitance Resistance Carrier Switching Resistance
Lifetime Time
Ø VBR Cj RSF τI TCR Rth

TEST VR = 6 V IF = 10 mA IF = 10 M A IF = 20 mA Pdiss
IR = 10 µA
CONDITIONS f = 1 MHz f = 120 MHz IR = 6 mA VR = 10 V 1W
50 Ω F 27 d
TYPE µm V pF Ω ns ns TYPE STANDARD CASES (1) °C/W
Cb = Cb =
Case
typ. min typ. max max typ. typ. 0.18 pF 0.12 pF max
C2a (1)
(2) (2)
EH50033 25 30 0.08 0.12 1.8 20 2.0 DH50033 F27d M208 80
EH50034 30 30 0.12 0.17 1.5 20 2.0 DH50034 F27d M208 80
EH50035 35 30 0.17 0.23 1.0 25 2.5 DH50035 F27d M208 70
EH50036 55 30 0.23 0.40 0.9 30 3.0 DH50036 F27d M208 60
EH50037 65 30 0.40 0.60 0.7 40 4.0 DH50037 F27d M208 50
EH50052 30 50 0.06 0.08 1.6 30 3.0 DH50052 F27d M208 80
EH50053 35 50 0.08 0.12 1.4 30 3.0 DH50053 F27d M208 70
EH50054 40 50 0.12 0.17 1.1 35 4.0 DH50054 F27d M208 60
EH50055 50 50 0.17 0.23 1.0 40 4.0 DH50055 F27d M208 50
EH50056 65 50 0.23 0.40 0.9 50 5.0 DH50056 F27d M208 45
EH50057 80 50 0.40 0.60 0.7 60 6.0 DH50057 F27d M208 45
EH50071 35 70 0.04 0.06 2.0 50 5.0 DH50071 F27d M208 70
EH50072 40 70 0.06 0.08 1.7 50 5.0 DH50072 F27d M208 70
EH50073 45 70 0.08 0.12 1.6 60 6.0 DH50073 F27d M208 60
EH50074 50 70 0.12 0.17 1.4 60 6.0 DH50074 F27d M208 50
EH50075 60 70 0.17 0.23 1.0 100 10.0 DH50075 F27d M208 45
EH50076 80 70 0.23 0.40 0.9 100 10.0 DH50076 F27d M208 40
EH50077 100 70 0.40 0.60 0.7 150 15.0 DH50077 F27d M208 40
EH50101 45 100 0.04 0.06 1.9 150 15.0 DH50101 F27d M208 60
EH50102 50 100 0.06 0.08 1.7 150 15.0 DH50102 F27d M208 60
EH50103 60 100 0.08 0.12 1.4 200 20.0 DH50103 F27d M208 55
EH50104 70 100 0.12 0.17 1.2 250 25.0 DH50104 F27d M208 50
EH50105 90 100 0.17 0.23 1.0 300 30.0 DH50105 F27d M208 40
EH50106 110 100 0.23 0.40 0.8 400 40.0 DH50106 F27d M208 35
EH50107 130 100 0.40 0.60 0.6 500 50.0 DH50107 F27d M208 35
(1) Custom cases available on request Temperature ranges:

(2) CT = Cj + Cb Operating Junction (T j) : -55° C to +175° C
1-21
SILICON PIN DIODES
Fast switching silicon PIN diodes
Description
For fast switching, these passivated mesa diodes have a medium I layer (< 50 µm).
CHIP DIODES E L CHIP

E AND
C PACKAGED
T R IDIODES
C A L PACKAGED DIODES
Characteristics Gold Breakdown Junction Series Minority Reverse Thermal
at 25°C Dia Voltage Capacitance Resistance Carrier Switching Resistance
Lifetime Time
Ø VBR Cj RSF τI TCR Rth

TEST VR = 50 V IF = 10 mA IF = 10 M A IF = 20 mA Pdiss
IR = 10 µA
CONDITIONS f = 1 MHz f = 120 MHz IR = 6 mA VR = 10 V 1W
50 Ω F27 d
TYPE µm V pF Ω ns ns TYPE STANDARD CASES (2) °C/W
Cb = Cb =
Case
typ. min typ. max max typ. typ. 0.18 pF 0.12 pF max
C2a (1)
(2) (2)
EH50151 55 150 0.04 0.06 2.0 200 20 DH50151 F27d M208 50
EH50152 60 150 0.06 0.08 1.7 230 23 DH50152 F27d M208 50
EH50153 70 150 0.08 0.12 1.5 300 30 DH50153 F27d M208 45
EH50154 90 150 0.12 0.17 1.4 500 50 DH50154 F27d M208 40
EH50155 110 150 0.17 0.23 1.0 550 55 DH50155 F27d M208 35
EH50156 130 150 0.23 0.40 0.8 800 80 DH50156 F27d M208 30
EH50157 150 150 0.40 0.60 0.6 950 95 DH50157 F27d M208 30
EH50201 60 200 0.04 0.06 2.3 300 30 DH50201 F27d M208 45
EH50202 65 200 0.06 0.08 2.1 400 40 DH50202 F27d M208 45
EH50203 75 200 0.08 0.12 1.5 500 50 DH50203 F27d M208 40
EH50204 100 200 0.12 0.17 1.3 650 65 DH50204 F27d M208 35
EH50205 120 200 0.17 0.23 1.0 800 80 DH50205 F27d M208 30
EH50206 150 200 0.23 0.40 0.8 950 95 DH50206 F27d M208 30
EH50207 170 200 0.40 0.60 0.7 1050 100 DH50207 F27d M208 25
EH50251 65 250 0.04 0.06 2.4 330 33 DH50251 F27d M208 40
EH50252 75 250 0.06 0.08 2.2 500 50 DH50252 F27d M208 40
EH50253 100 250 0.08 0.12 2.0 900 90 DH50253 F27d M208 35
EH50254 130 250 0.12 0.17 1.4 900 90 DH50254 F27d M208 30
EH50255 160 250 0.17 0.23 0.9 1000 100 DH50255 F27d M208 30
EH50256 180 250 0.23 0.40 0.8 1150 110 DH50256 F27d BH142 25
EH50401 80 400 0.04 0.06 2.5 700 70 DH50401 F27d M208 35
EH50402 90 400 0.06 0.08 2.3 800 80 DH50402 F27d M208 35
EH50403 120 400 0.08 0.12 2.1 1000 100 DH50403 F27d M208 30
EH50404 150 400 0.12 0.17 1.8 1500 150 DH50404 F27d BH142 25
EH50405 200 400 0.17 0.23 1.6 2000 200 DH50405 F27d BH142 20
(1) Chip presentation C2a, except: Temperature ranges:

C2b forEH50256, EH50404 and EH50405 Operating junction (T j) : -55° C to +175° C
(2) Custom cases available on request Storage : -65° C to +200° C
(3) CT = Cj + Cb

1-22
SILICON PIN DIODES
Attenuator silicon PIN diodes
Description
The table below presents a single set of values from the variety of customer options available for this
series of passivated PIN diodes. TEKELEC TEMEX uses its proprietary technology, which enables the
customer to incorporate characteristics specific to the application involved, e.g. capacitance and I zone
thickness. Typical applications include variable RF attenuators and AGC (Automatic Gain Control)
circuits, from a few MHz to several GHz.
PACKAGED
CHIP DIODES CHIP AND PACKAGED DIODES
DIODES
C I JUNCTION REVERSE MINORITY CARRIER
SERIES RESISTANCE
CHARACT. O ZONE CAPACITANCE CURRENT LIFETIME
AT 25°C N THICKNESS RSF
F
(1)
CJ (2) IR τI
I
TEST G F = 1 MHz IF = 10 mA
U F = 120 MHz VR = 50 V VR = 100 V IR = 6 mA
CONDITIONS
R
A µm STANDARD
IF = 0.1 mA IF = 1 mA IF = 10 mA
TYPE T pF µA µs Type PACKAGE
I Ω Ω Ω (3)
O
N typ. min max min max min max typ. max max min typ.
EH40073 C4c 70 70 140 8 16 1.0 2.0 0.30 0.50 10 1.5 2.0 DH40073 F 27d
EH40141 C4a 140 400 800 50 100 6.5 13.0 0.05 0.10 10 1.5 2.5 DH40141 F 27d
EH40144 C4c 140 200 400 25 50 3.5 7.0 0.10 0.30 10 4.0 5.0 DH40144 F 27d
EH40225 C4d 220 400 800 50 100 6.5 13.0 0.10 0.30 10 5.5 7.0 DH40225 F 27d
(1) Other I zone thicknesses available on request Temperature ranges:

(2) Other capacitance values available on request Operating junction (Tj) : -55° C to +175° C
(3) Custom cases available on request Storage : -65° C to +200° C
Typical series resistance vs forward current

1-23
SILICON PIN DIODES
Silicon limiter PIN diodes
Description
These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and
in hermetic ceramic packages. They operate as power dependent variable resistances and provide
passive receiver protection (low noise amplifiers, mixers, and detectors).
CHIP DIODES PACKAGED DIODES
BREAKDOWN JUNCTION JUNCTION SERIES MINORITY

GOLD DIA VOLTAGE CAPACITANCE CAPACITANCE CARRIER
CHARACTERISTICS AT 25°C RESISTANCE LIFETIME
Ø
VBR Cj0 Cj-6 (1) RSF τI
IR = 10µA VR =0 V VR = 6 V IF = 10mA IF = 1 0m A
TEST CONDITIONS
f = 1 MHz f = 1 MHz f = 120 MHz IR = 6 mA
TYPE CASE µm V pF pF Ω ns
typ. min max typ. min max max typ.
EH60033 C2a 25 25 50 0.14 0.08 0.12 1.8 20
EH60034 C2a 30 25 50 0.20 0.12 0.17 1.5 20
EH60035 C2a 35 25 50 0.28 0.17 0.23 1.0 25
EH60036 C2a 55 25 50 0.45 0.23 0.40 0.9 30
EH60037 C2a 65 25 50 0.70 0.40 0.60 0.7 40
EH60052 C2a 30 50 70 0.10 0.06 0.08 1.8 30
EH60053 C2a 35 50 70 0.14 0.08 0.12 1.4 30
EH60054 C2a 40 50 70 0.20 0.12 0.17 1.1 35
EH60055 C2a 50 50 70 0.28 0.17 0.23 1.0 40
EH60056 C2a 65 50 70 0.45 0.23 0.40 0.9 50
EH60057 C2a 80 50 70 0.70 0.40 0.60 0.8 60
EH60072 C2a 40 70 90 0.10 0.06 0.08 1.7 50
EH60074 C2a 50 70 90 0.20 0.12 0.17 1.4 60
EH60076 C2a 80 70 90 0.45 0.23 0.40 0.9 100
EH60102 C2a 50 90 120 0.10 0.06 0.08 1.7 150
EH60104 C2a 70 90 120 0.20 0.12 0.17 1.2 250
EH60106 C2a 110 90 120 0.45 0.23 0.40 0.8 400
(1) Other values of capacitance available on request

1-24
SILICON PIN DIODES
PACKAGED DIODES NOMINAL MICROWAVE CHARACTERISTICS
THERMAL THRESHOLD LEAKAGE

INSERTION PEAK CW POWER
CHARACTERISTICS AT 25°C RESISTANCE POWERLOSS POWER
RTH PL PIN
POUT L PIN
Pdiss = 1W f = 2.7 GHz f = 2.7 GHz 1 µs
TEST CONDITIONS 1dB f = 2.7 GHz PIN = -10 Pulse
case F 27d Limiting dBm 1% DC
STANDARD CASE (2) °C/W dBm dBm dB dBm W
TYPE Cb = 0.18 pF Cb = 0.12 pF
max typ. typ. typ. max max
(3) (3)
DH60033 F 27d M208 80 + 10 + 20 0.1 + 50 2.0
DH60034 F 27d M208 80 + 10 + 20 0.1 + 50 2.0
DH60035 F 27d M208 70 + 10 + 21 0.1 + 52 2.5
DH60036 F 27d M208 60 + 10 + 22 0.2 + 53 3.0
DH60037 F 27d M208 50 + 10 + 23 0.2 + 56 4.0
DH60052 F 27d M208 80 + 15 + 24 0.1 + 52 2.5
DH60053 F 27d M208 70 + 15 + 24 0.1 + 52 2.5
DH60054 F 27d M208 60 + 15 + 25 0.1 + 53 3.0
DH60055 F 27d M208 50 + 15 + 26 0.1 + 54 3.5
DH60056 F 27d M208 45 + 15 + 27 0.2 + 57 4.0
DH60057 F 27d M208 45 + 15 + 28 0.2 + 58 5.0
DH60072 F 27d M208 70 + 18 + 27 0.1 + 54 3.0
DH60074 F 27d M208 50 + 18 + 30 0.2 + 55 4.0
DH60076 F 27d M208 40 + 18 + 32 0.2 + 58 5.0
DH60102 F 27d M208 60 + 20 + 31 0.2 + 56 3.5
DH60104 F 27d M208 50 + 20 + 33 0.2 + 59 5.0
DH60106 F 27d M208 35 + 20 + 35 0.3 + 61 7.0
(2) Other capacitance values available on request Temperature ranges:

(3) CT = Cj +Cb Operating junction (T j) : -55° C to +125° C

1-25
SILICON SCHOTTKY DIODES
Selection guide
Selection Guide
SCHOTTKY BARRIER DETECTOR DIODES
SCHOTTKY BARRIER MIXER DIODES

1-26
Silicon Schottky barrier detector diodes
SILICON SCHOTTKY BARRIER DETECTOR DIODES
Description
Silicon Schottky barrier detector diodes are available as:
• packaged diodes
• chip
They are optimised for wide band applications, in the frequency range from 1 to 18 GHz.
Electrical characteristics packaged diodes
FREQUENCY TANGENTIAL VIDEO RF FORWARD

CONTINUOUS BV
REAKDOWN
CHARACTERISTICS AT 25°C RANGE SENSITIVITY RESISTANCE POWER CURRENT OLTAGE
Foper Tss RV PRF IF VBR
TEST CONDITIONS N/A Video bandwidth = 1 MHz CW N/A IR = 10 µA

IF = 30 µA
dBm kΩ mW mA V
TYPE CASE (1) GHz
min min max max max typ.
DH340 F51 2 - 12 - 54 1 2 250 50 3
12 - 18 - 51

Typical tangential sensitivity vs frequency

• T = + 25° C
• IF = 30 µA
• Video bandwidth = 1 MHz

1-27
Silicon Schottky barrier mixer diodes
SILICON SCHOTTKY BARRIER MIXER DIODES
Description
Silicon Schottky barrier mixer diodes are available in the following configurations:
• packaged
• chip
Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between
- 10 dBm and +10 dBm. Medium barrier diodes are required for applications where the LO drive level
is between -5 dBm and +15 dBm. The use of a passivated planar construction contributes to high
reliability.
Electrical characteristics packaged diodes
FREQUENCY SSB VSWR IF BREAKDOWN TOTAL

CHARACTERISTICS NOISE IMPEDANCE TEST PULSE
RANGE VOLTAGE CAPACITANCE
AT 25°C FIGURE ENERGY
Foper (RATIO) ZIF VBR CTO
NFSSB
f = 30 MH Z F =1 MHZ
TEST CONDITIONS N/A (1) N/A I = 10 µA
PLO = 1 mW PULSE = 3nS R VR = 0 V
TYPE CASE (2) GHz dB ratio Ω Ergs V pF
max typ. max min max max typ. typ.
DH301 F51 1-6 6.5 1.5 2 200 400 5 3 0.40
DH302 F51 1-6 6.0 1.5 2 200 400 5 3 0.40
DH303 F51 1-6 5.5 1.5 2 200 400 5 3 0.40
DH312 F51 6 - 12 7.0 1.5 2 200 400 5 3 0.25
DH313 F51 6 - 12 6.5 1.5 2 200 400 5 3 0.25
DH314 F51 6 - 12 6.0 1.5 2 200 400 5 3 0.25
DH315 F51 6 - 12 5.5 1.5 2 200 400 5 3 0.25
DH322 F51 12 - 18 7.5 1.5 2 200 400 5 3 0.17
DH323 F51 12 - 18 7.0 1.5 2 200 400 5 3 0.17
DH324 F51 12 - 18 6.5 1.5 2 200 400 5 3 0.17
DH325 F51 12 - 18 6.0 1.5 2 200 400 5 3 0.17
RF Power max: 250 mW CW Temperature ranges:

(1) Noise figure measurement conditions: Storage : -65° C to +175° C
PLO = 1 mW
fIF = 30 MHz
NFIF = 1.5 dB
noise tube: 15.6 dB
dc load = 10 Ω
test frequencies: 3.0, 9.3 or 15.0 GHz
(2) Custom cases available on request
1-28
TUNING VARACTOR
Selection guide
TUNING VARACTOR
Selection Guide
SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

- VBR = 30 V
- VBR = 45 V
SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
MICROWAVE SILICON HYPERABRUPT

JUNCTION TUNING VARACTO
A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the
same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast
band receivers.

1-29
TUNING VARACTOR
SOT23 surface mount silicon abrupt tuning varactor
• High quality factor TEKELEC TEMEX silicon abrupt tuning

varactors have an epitaxial mesa design with a
• Low leakage current high temperature passivation. This technology
is used to produce abrupt tuning varactor in
• Passivated silicon mesa technology SOT23 package. This family is designed for a
low cost medium to high volume market that
• Surface mount package
may be supplied in tape and reel for automated
pick and place assembly on surface mount
• Tape and reel packaging available
circuit boards.
The DH71000 series abrupt tuning varactor are

offered in a large selection of capacitance
range. They provide the highest Q factor (low
reverse series resistance) available for a
30 volts silicon device.
-51 -53
Typical applications include low noise narrow
and moderate frequency bandwidth appli-
(Top view)
cations (VCO mainly) from HF to Microwave
frequencies (up to 3 GHz).
Nota: Other plastic packages available. Other applications are voltage tuned filters,
phase shifters, delay lines ....
NOTE: Variation of the junction capacitance

versus reverse voltage follows this equation:
Cj (Vr) = Cj (0 V)
[ ]
γ
1 + Vr
φ
Vr : Reverse voltage
φ : Built-in potential .7V for Si
γ : .5 for abrupt tuning varactor

1-30
TUNING VARACTOR
Electrical Breakdown Junction Tuning Figure

Parameters Voltage Capacitance Ratio of Merite
VBR Cj (1) (2) Q
F = 1 MHz VR = 4 V
Test Conditions IR = 10 µA Cj0/Cj30
VR = 4 V F = 50 MHz
V pF
Type (3) typ. typ.
min ± 20 %
DH71010-XX 30 1 4 4300
DH71016-XX 30 1.6 4.5 4100
DH71020-XX 30 2 4.6 3900
DH71030-XX 30 3 4.7 3400
DH71045-XX 30 4.5 4.8 3000
DH71067-XX 30 6.7 4.9 2600
DH71100-XX 30 10 5 2200
(1) Other tolerance on request

(2) DH71067-XX & DH71100-XX: Tolerance on Cj ± 10 %
(3) -XX digits for internal electrical configuration
Temperature ranges:

Typical performance curve

1-31
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

VBR 30 V
Description
This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES (1)

VBR (10 µA) ≥ 30 V STANDARD CASES OTHER CASES
GOLD Junction FIG. OF Tuning Tuning
CHARACTERISTICS AT 25°C DIA Capacitance Merit Ratio Ratio
Ø Cj Q CTO/CT30 CTO/CT30
CASE CASE
VR = 4 V VR = 4 V CAPACITANCE CAPACITANCE
Test Conditions
f = 1 MH Z f = 50 MH Z Cb Cb
TYPE CASE µm pF TYPE CASE CASE

typ. ± 20 % (2) min Cb= 0.18 pF (3) min Cb= 0.12 pF (3) min
EH71004 C2a 50 0.4 4500 DH71004 F27d 3.0 M208 3.3
EH71006 C2a 60 0.6 4500 DH71006 F27d 3.4 M208 3.7
EH71008 C2a 70 0.8 4400 DH71008 F27d 3.7 M208 4.0
EH71010 C2a 80 1.0 4300 DH71010 F27d 4.0 M208 4.3
EH71012 C2a 90 1.2 4200 DH71012 F27d 4.3 M208 4.5
EH71016 C2a 100 1.6 4100 DH71016 F27d 4.5 M208 4.6
EH71020 C2a 110 2.0 3900 DH71020 F27d 4.6 M208 4.7
EH71025 C2a 120 2.5 3600 DH71025 F27d 4.6 M208 4.8
EH71030 C2a 140 3.0 3400 DH71030 F27d 4.7 M208 4.8
EH71037 C2a 150 3.7 3200 DH71037 F27d 4.7 M208 4.8
EH71045 C2a 170 4.5 3000 DH71045 F27d 4.8 M208 4.9
EH71054 C2a 180 5.4 2800 DH71054 F27d 4.8 M208 4.9
± 10 % (2) Cb= 0.18 pF (3) Cb= 0.2 pF (3)
EH71067 C2a 200 6.7 2600 DH71067 F27d 4.9 BH142 4.9
EH71080 C2b 220 8.0 2400 DH71080 F27d 5.0 BH142 5.0
EH71100 C2b 250 10.0 2200 DH71100 F27d 5.0 BH142 5.0
EH71120 C2b 270 12.0 2000 DH71120 F27d 5.1 BH142 5.1
EH71150 C2b 300 15.0 1800 DH71150 F27d 5.1 BH142 5.1
EH71180 C2b 330 18.0 1700 DH71180 F27d 5.2 BH142 5.2
EH71200 C2b 350 20.0 1500 DH71200 F27d 5.2 BH142 5.2
EH71220 C2b 370 22.0 1400 DH71220 F27d 5.2 BH142 5.2
EH71270 C2b 410 27.0 1300 DH71270 F27d 5.2 BH142 5.2
EH71330 C2c 450 33.0 1200 DH71330 F27d 5.2 BH142 5.2
EH71390 C2c 500 39.0 950 DH71390 F27d 5.2 BH142 5.2
EH71470 C2c 540 47.0 750 DH71470 F27d 5.2 BH142 5.2
EH71560 C2c 590 56.0 650 DH71560 F27d 5.2 BH142 5.2
EH71680 C2c 650 68.0 500 DH71680 F27d 5.2 BH142 5.2
EH71820 C2d 720 82.0 400 DH71820 F27d 5.2 BH142 5.2
EH71999 C2d 800 100.0 300 DH71999 F27d 5.2 BH142 5.2
(2) Closer capacitance tolerances available on request Operating junction (T j) : -55° C to +150° C
(3) CT = Cj + C b Storage : -65° C to +175° C
1-32
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
VBR 45 V
Description
This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to X band.
CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES (1)

VBR (10 µA) ≥ 45 V STANDARD CASES OTHER CASES
GOLD Junction FIG. OF Tuning Tuning
CHARACTERISTICS AT 25° C DIA Capacitance Merit Ratio Ratio
Ø Cj Q CTO/CT45 CTO/CT45
CASE CASE
VR = 4 V VR = 4 V
Test Conditions CAPACITANCE CAPACITANCE
f = 1 MH Z f = 50 MH Z Cb Cb
TYPE CASE µm pF TYPE CASE CASE
typ. ± 20 % (2) min Cb = 0.18pF (3) min Cb = 0.12pF (3) min
EH72004 C2a 60 0.4 3000 DH72004 F27d 3.5 M208 3.7
EH72006 C2a 80 0.6 2900 DH72006 F27d 3.9 M208 4.1
EH72008 C2a 90 0.8 2800 DH72008 F27d 4.2 M208 4.5
EH72010 C2a 110 1.0 2700 DH72010 F27d 4.5 M208 4.7
EH72012 C2a 110 1.2 2700 DH72012 F27d 4.7 M208 4.9
EH72016 C2a 120 1.6 2600 DH72016 F27d 5.0 M208 5.2
EH72020 C2a 140 2.0 2500 DH72020 F27d 5.2 M208 5.5
EH72025 C2a 150 2.5 2400 DH72025 F27d 5.4 M208 5.6
EH72030 C2a 170 3.0 2300 DH72030 F27d 5.5 M208 5.7
EH72037 C2a 190 3.7 2200 DH72037 F27d 5.6 M208 5.7
EH72045 C2a 210 4.5 2000 DH72045 F27d 5.7 M208 5.8
EH72054 C2a 230 5.4 1900 DH72054 F27d 5.8 M208 5.9
± 10 % (2) Cb =0.18pF (3) Cb = 0.2pF (3)
EH72067 C2b 250 6.7 1800 DH72067 F27d 5.9 BH142 6.0
EH72080 C2b 280 8.0 1700 DH72080 F27d 5.9 BH142 6.0
EH72100 C2b 310 10.0 1600 DH72100 F27d 6.0 BH142 6.0
EH72120 C2b 340 12.0 1500 DH72120 F27d 6.0 BH142 6.0
EH72150 C2b 380 15.0 1400 DH72150 F27d 6.0 BH142 6.0
EH72180 C2b 420 18.0 1300 DH72180 F27d 6.0 BH142 6.0
EH72200 C2b 440 20.0 1200 DH72200 F27d 6.0 BH142 6.0
EH72220 C2c 470 22.0 1100 DH72220 F27d 6.0 BH142 6.0
EH72270 C2c 520 27.0 1000 DH72270 F27d 6.0 BH142 6.0
EH72330 C2c 570 33.0 900 DH72330 F27d 6.0 BH142 6.0
EH72390 C2c 620 39.0 800 DH72390 F27d 6.0 BH142 6.0
± 10 % (2) Cb = 0.18pF (3) Cb = 0.4pF (3)
EH72470 C2d 680 47.0 700 DH72470 BH28 6.0 BH157 6.0
EH72560 C2d 740 56.0 600 DH72560 BH28 6.0 BH157 6.0
EH72680 C2d 820 68.0 450 DH72680 BH28 6.0 BH157 6.0
± 10 % (2) Cb = 0.4pF (3) Cb = 0.4pF (3)
EH72820 C2g 900 82.0 350 DH72820 BH141 6.0 BH157 6.0
EH72999 C2g 1000 100.0 250 DH72999 BH141 6.0 BH157 6.0
(2) Closer capacitance tolerances available on request Operating junction (T j) : -55° C to +150° C
(3) CT = Cj + Cb Storage : -65° C to +175° C
1-33
TUNING VARACTOR
Silicon hyperabrupt junction tuning varactor
SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a
passivated mesa technology. Packaged or chip devices are available for VHF linear electronic tuning.

GOLD BREAKDOWN TOTAL FIG. OF BIAS TUNING
CHARACTERISTICS AT 25°C DIA VOLTAGE CAPACITANCE MERIT VOLTAGE RATIO
Ø VBR CT Q VR CTO/CT20
f = 1 MHz f = 50 MHz
TEST CONDITIONS IR = 10 µA VR VR f = 1 MHz
STANDARD
TYPE CASE µm V pF TYPE CASE
(1)
min min typ. min V typ. Cb = 0.18 pF
EH724 C2b 200 25 15 100 4 10 DH724 F27d
EH726 C2b 220 25 13 100 6 9 DH726 F27d
EH728 C2b 250 25 12 150 8 8 DH728 F27d
EH730 C2b 270 25 10 250 10 8 DH730 F27d
EH732 C2b 300 25 10 250 12 7 DH732 F27d

Typical total capacitance and Q versus reverse voltage

1-34
TUNING VARACTOR
Microwave silicon hyperabrupt junction tuning varactor
MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a
passivated mesa technology. Packaged or chip devices are available for linear electronic tuning up to
Ku band.

GOLD BREAKDOWN TOTAL FIG. OF TUNING
CHARACTERISTICS AT 25°C DIA VOLTAGE CAPACITANCE MERIT RATIO
∅ VBR CT Q CTO/CT20
IR = 10 µA f = 1 MHz f = 1 GHz
TEST CONDITIONS VR =6 V VR = 6 V f = 1 MHz
TYPE CASE µm V pF TYPE STANDARD CASE (1)

min min typ. typ. min Cb = 0.18 pF Cb = 0.12 pF
EH733 C2a 60 20 0.8 180 5 DH733 F27d M208

EH734 C2a 80 20 1.2 160 5 DH734 F27d M208
EH735 C2a 100 20 1.8 150 5 DH735 F27d M208
EH736 C2a 160 20 2.7 100 6 DH736 F27d M208
EH737 C2a 180 20 3.9 85 6 DH737 F27d M208
EH738 C2a 200 20 4.7 70 6 DH738 F27d M208

Typical total capacitance and Q versus reverse voltage

1-35
Selection guide
Selection Guide
STEP RECOVERY DIODES
SILICON MULTIPLIER VARACTORS

1-36
Step recovery diodes and multiplier varactor applications
STEP RECOVERY DIODES AND MULTIPLIER

VARACTOR APPLICATIONS
A step recovery diode (SRD) generates pulses that can be used to multiply frequencies, and to set up
reference points, e.g. for synchronising test instruments.
This device operates by alternately producing and consuming a charge, based on the frequency of its
input signal. During forward bias, the SRD conducts and builds up its charge. During reverse bias, the
SRD maintains conduction by consuming its charge. When the charge has been fully consumed, the SRD
snaps off, i.e. very quickly reverts to zero conduction.
This device acts as a switch, controlling current flow by alternately storing and releasing its charge, forming
pulses at a repetition rate equal to the frequency of its input.
The output of a step recovery diode is most often used in two ways:
• a pulse train can be applied to resonant circuits, which provides output power at a frequency
above that of the original input,
• a pulse train can be used to develop a series of frequencies at multiples of the original input
frequencies.
Typical applications of step recovery diodes include oscillators, power transmitters and drivers, for
telecommunications, telemetry, radar and test equipments.
In choosing a SRD, the significant characteristics include:
Output Frequency (fo) ; Breakdown Voltage (V BR) ; Junction Capacitance (C j) ; Minority Carrier
Lifetime (τl) ; Snap-off Time (tso) ; Thermal Resistance (Rth) and Output Power (Po).
Multiplier varactors
A multiplier varactor is a physical stack of series-connected SRD units. This configuration is capable of
multiplying power.
Packages for multiplier varactors are designed to dissipate the power yield Power out
Power in (
Most of these packages hold from 2 to 4 chips, this type of components are available on customer
request.

1-37
Step recovery diodes (SRD)
STEP RECOVERY DIODES (SRD)
Description
These diodes use mesa technology and oxide passivation. They support fast switching and multiplier
applications:
• very short pulse generation,
• ultra fast waveform shaping,
• comb generation,
• high order multiplication, at moderate power ratings.

GOLD BREAKDOWN JUNCTION MIN. CAR. SNAP-OFF THERMAL
CHARACTERISTICS DIA VOLTAGE CAPACITANCE LIFETIME TIME RESISTANCE
AT 25°C
∅ VBR Cj τI tSO RTH
VR =6 V IF =10mA IF = 10 mA Pdiss = 1 W
TEST CONDITIONS N/A I = 10µA
R
f = 1 MHz IR = 6mA VR = 10V in F27d
TYPE CASE µm V pF ns ps TYPE CASE (1) °C/W Other cases (1)
typ. min max min typ. max Cb =0.1pF max Cb =0.18pF Cb =0.18pF
(2) (2) (2)
EH541 C2a 160 30 1.5 25 90 140 DH541 A22e 30 F27d M208
EH542 C2a 220 50 1.5 40 150 250 DH542 A22e 25 F27d M208
EH543 C2a 110 30 1.0 20 90 140 DH543 A22e 40 F27d M208
EH544 C2a 140 50 1.0 35 150 250 DH544 A22e 35 F27d M208
EH545 C2a 55 25 0.4 10 75 100 DH545 A22e 70 F27d M208
EH546 C2a 40 15 0.3 6 60 80 DH546 A22e 100 F27d M208

(2) CT = C j + C b Operating junction (T j) : -55° C to +150° C

1-38
Silicon multiplier varactor
SILICON MULTIPLIER VARACTORS
Description
These silicon multiplier varactors (from 0.2 to 25 GHz) are designed for harmonic generation of high power
levels (stack configuration) and/or at high multiplication orders.
Packaged diodes
OUTPUT BREAKDOWN JUNCTION MIN. CAR. SNAP-OFF THERMAL

CHARACTERISTICS POWER OUTPUT
FREQ. VOLTAGE CAPACIT. LIFETIME TIME RESISTANCE
AT 25°C VARACTOR Po
CHIPS PER FO VBR Cj τI tso Rth
TEST PACKAGE VR = 6 V IF = 10 mA IF = 10 mA
N/A IR = 10 µA N/A fo = (n)fi
CONDITIONS f = 1 MHz IR = 6 mA VR = 10 V
V pF ns ps °C/W W
TYPE CASE GHz min max min max min max max typ. (n)
DH294 DO7 1 0.2 - 2 45 70 4.0 7.0 125 400 300 0.5 2
DH200 F49 1 0.5 - 2 90 140 5.5 7.0 250 1000 8 20.0 2
DH270 S268-W1 1 2-3 80 110 4.0 5.5 160 700 10 15.0 2
DH110 F27d 1 2-4 60 90 3.0 4.0 100 400 25 9.0 2
DH293 F60d 1 3-6 50 70 2.0 3.0 60 250 30 6.0 2
DH252 F27d 1 2-8 40 60 0.9 2.0 35 200 50 3.0 2
DH256 F27d 1 5 - 12 30 45 0.5 1.1 20 120 60 2.0 2
DH292 F27d 1 8 - 16 20 35 0.2 0.5 10 75 70 0.6 2
DH267 F27d 1 10 - 25 15 25 0.2 0.3 6 60 100 0.2 2
Temperature ranges:


1-39
MOS CAPACITORS CHIPS & ARRAYS
Selection guide
Selection Guide
SINGLE-PAD MOS CAPACITORS
MULTI-PADS MOS CAPACITORS
MULTI-PADS BAR CAPACITORS
HOW TO ORDER

1-40
Top process / High performance
TOP PROCESS / HIGH PERFORMANCE
TEKELEC TEMEX M.O.S. (Metal - Oxide - Silicon) chips and arrays capacitors feature small size and
high Q performances making them ideally suited for hybrid microwave circuits up to 30 GHz.
The dielectric (Silicon dioxide) thermally grown on a silicon wafer has a very low dielectric constant
(∈1 = 3.9 ∈0) and very stable temperature coefficient allowing a complete range of stable capacitance
values (0.1 to 100 pF).
The dielectric thickness determines the rated voltage for a given capacitance value:
• VR = 40 V e = 0.15 µm
• VR = 100 V e = 0.25 µm
• VR = 200 V e = 0.50 µm
• VR = 400 V e = 1.0 µm
• VR = 500 V e = 1.8 µm
The metallization areas which are the terminations of the capacitors are obtained with photo-masking
technics and are made of sputtered titanium (≈ 700 Å) and gold (≈ 6000 Å).
An electrolytic gold layer of 1.5 µm is made on top termination to ensure the best contact with the
external circuits:
• Bottom termination attachment technics:
EutecticAu-Sn (80/20) Melting point 280° C
“ “ Au-Ge (88/12) Melting point 350° C
Conductive epoxy
• Top termination:
Thermocompression, Thermosonic and wedge bonding may be used.
Applications Physical description

• DC Block, RF by-pass
• Source by-pass Gold electrolytic
• Impedance matching - Trimming
S Ti/Au
• Filters
• Decoupling for Ga-As FET Silicon
e
dioxide
(Si O2)
Silicon N+
Ti/Au
S
The capacitance is given by C = ∈1 x e
∈1 = 3.9 ∈0
S = surface of the top termination
e = thickness of the oxide

1-41
Single-pad chip capacitor CS series
SINGLE-PAD CHIP CAPACITOR CS SERIES

General characteristics Dimensions (in µm)
Capacitance range (C R): 0.1 to 100 pF.
L Case L T
See tables 1 & 2. size min - max typical
Tolerance capacitance: MC106 340 - 400 200
ø
• Standard : ± 20 % (CS, CJ, CB) L (1)
MC107 540 - 600 200
• Others : ± 10, ± 5, ± 2 % (consult us) (2)
MC108 740 - 800 200
Rated voltage (U R): See tables 1, 2 & 3.
T
Note: Voltage and capacitance values being MC110 940 - 1000 200
tightly linked to dielectric thickness and top
termination area means, special requirements Note 1: ø is indicated in table 1 for each capa-
may be achieved by our engineers. Please citance value.
consult us. Note 2: Square termination may also be achie-
Voltage proof (25° C): 1.5 x U R ved. Please consult us.
Insulation resistance (R i): Ri ≥ 105 MΩ. Table 1: Top termination diameter (µm) versus
(at rated voltage and 25° C) Capacitance / Voltage range
Temperature coefficient: 50 ppm°/C (typical) CR MC106 MC107 MC108 MC110

(over temperature range)
0.22 pF 145
Storage and operating temperature range: 0.27 pF 160
0.33 pF 180
- 55° C to + 200° C.
0.39 pF 200
0.47 pF 220
Environmental characteristics 0.56 pF 240 500
0.68 pF 260
CONSTRAINT 0.82 pF 280 400
CONSTRAINT STANDARD / CONDITIONS Experimental 1.0 pF 220 200

results before 1.2 pF 250
first failure 1.5 pF 270 100
1.8 pF 300
SALT NFC 20711: 35° C, 5% NaCl, 35° C
2.2 pF 230 40
16, 24, 48, 96, 168, 336, 672 h. 5 % NaCl
2.7 pF 260
> 400 hours
3.3 pF 290
SPRAY MIL STD 202 F, method 101D
3.9 pF 220 310
35° C, 5% NaCl, 48, 96 h.
4.7 pF 240 340
DAMP NFC 20703 40° C 5.6 pF 270 370
93% RH 6.8 pF 290 400
HEAT MIL STD 202 F, method 103B > 56 days 8.2 pF 220 450
CONTAMINENTS GAM EG 13 Coolanol
50° C, 24 h. Kerozene 10 pF 250 350
65° C, 165 h. Glycol 12 pF 270 390 540
> 1 000 hours 15 pF 310 430 600
18 pF 340 660
THERMAL NFC 20714 - 55 / + 125° C
22 pF 370 520
Temperature/nb of cycles specific > 5 000 hours
27 pF 410 580
33 pF 450 640
SHOCK MIL STD 202 F, method 107G - 65 / + 175° C
39 pF 490 700
N° cycles: 5, 25, 50, 100 > 5 000 hours
47 pF 540
A : - 55 / + 85° C
56 pF 590
B : - 65 / + 125° C
68 pF 660
C : - 65 / + 200° C
82 pF 720
D : - 65 / + 150° C
RADIATION On study 100 pF 780

1-42
Multi-pads capacitor arrays CJ series
MULTI-PADS CAPACITOR ARRAYS CJ SERIES
These capacitor arrays are intended for fine and Dimensions (in µm)
precise adjustments in circuits which need to be
tuned and kept tuned whatever the mechanical MC111 MC112
and environmental conditions are.
L L
Note: These capacitor arrays are made of S 2S 4S 2S
several pads per case size. 4S
— For each case size, the unit and basic 2S
capacitance value is “S”. S
— This is also the value of the step capacitance. 10S
— The number of steps is obtained with alll 4S S S 2S
combinations to be achieved with the basic
capacitance pad “S” and the other pads made
of “2S”, “4S”, “10S”…
MC113 MC114
— The area of the minimum capacitance value
“S” is given herebelow for each case size. L L
MC111 : S = (70 x 70) µm2

3S
MC112 : S = (90 x 90) µm2 2S
MC113 : S = (180 x 270) µm2
MC114 : S = (115 x 400) µm2
S 2S
S
— For special designs, please consult us.
Table 2: Capacitance / Voltage range Case L T

size min - max typical
Note: Standard tolerance: ± 20% (M).
MC111 400 - 500 200
MC112 400 - 500 200

Case Size C min Number of C max Voltage
MC113 650 - 750 200
“S” steps (VR)
MC114 450 - 550 200
MC111 0.125 pF 23 2.875 pF 400 V

MC111 0.25 pF 23 5.75 pF 200 V
MC111 0.50 pF 23 11.5 pF 100 V
MC112 0.2 pF 11 2.2 pF 400 V

MC112 0.4 pF 11 4.4 pF 200 V
MC112 0.8 pF 11 8.8 pF 100 V
MC113 10 pF 6 60 pF 40 V
MC114 10 pF 3 30 pF 40 V

1-43
Multi-pads bar capacitors CB series
MULTI-PADS BAR CAPACITORS CB SERIES
These capacitor arrays are primarily intended for mounting in Ga-As integrated circuit packaging for
by-pass, decoupling and matching purposes.
They can also be used in hybrid circuits where high performance and stable capacitors are required.
The stable characteristics of these devices (temperature coefficient, low inductance, low insertion loss)
are perfectly suited to civil and military applications in the SHF and VHF application ranges (radar,
communications, transmission equipments).
Note: A kit containing 1 bar of each assembly (3, 4 and 5 pads of 100 pF) is available from TEKELEC
TEMEX Sales Office. Please consult us to get a free “MOS-BAR” kit sample.
Dimensions (in mm): See table 3 Multi-pads arrays
Y W
Ga As
L
Carrier
Table 3: Capacitance / Voltage range and dimensions (µm)

Note: Standard tolerance: ± 20% (M).
Case Number of Cr max per pad (pF) L W T X Y

Size pads 500V 400V 200V 100V 40V 25V ± 125 max typ. max max
MC130 3 1650
MC140 4 8 10 20 40 68 100 2160 980 200 400 850
MC150 5 2675

1-44
How to order
How to order
A - Single-pad chip capacitors B - Multi-pads arrays capacitors
501 MC106 CS OR82 K ★★★ 401 MC111 CJ OR125 M 23
Rated Case Size Series Capacitance Capacitance Special Rated Case Size Series Minimum Capacitance Number
Voltage Value Tolerance requi- Voltage Basic Tolerance of step
rement Capacitance
501 = 500V OR82 : 0.82pF M = ± 20 % if 401 = 400V M = ± 20 %
401 = 400V OR1 : 0.1pF needed 201 = 200V
On request
201 = 200V 1RO : 1 pF 101 = 100V
101 = 100V 100 : 10pF K = ± 10 % 400 = 40V
400 = 40V 101 : 100pF J = ± 5%
G = ± 2%
2 significants
digits
3 rd is a
multiplier Ex.: MC111
0 : 100 = 1 0.125 pF min ± 20% - 400V
1 : 101 = 10
23 steps (C max = 2.875 pF)
C - Multi-pads bar capacitors Designer kit: MOS-KIT
In order to back-up engineers in their design

401 MC140 CB 100 M ★★★
purposes, TEKELEC TEMEX proposes a kit
made of following parts:
Rated Case Size Series Capacitance Capacitance Special Case Size Capacitance value
Voltage (nber of pads) Value Tolerance requi-
of each pad rement
501 = 500V MC130 = 3 M = ± 20 % MC106 0.22 - 0.47 - 0.82 - 1 - 2.2 - 3.3 - 4.7 - 10 pF
if
401 = 400V MC140 = 4 needed
201 = 200V MC150 = 5 MC107 6.8 - 15 - 33 pF
101 = 100V
400 = 40V MC108 15 - 33 - 68 pF
MC110 100 pF
MC111 0.125 - 0.25 - 0.5 pF (C min)
MC112 0.2 - 0.4 - 0.8 pF (C min)
MC113 10 pF
MC114 10 pF
Capacitance tolerance: ± 20 %
Please order: MOS-KIT

1-45
Case styles
CASE STYLES
GENERAL PURPOSE SURFACE MOUNT DEVICES STRIP LINE / M ICRO STRIP
A22e SMD3 BH15

BH28 SMD4 BH16
BH32 SMD6 BH36
BH35 SMD8 BH100

BH142a SOD323 BH101
BH142b SOT23 BH143
BH142c SOT143 BH146
BH142d BH147
BH142e POWER BH151

BH142f BH152
BH165 BH153
BH141 BH154
BH165s
BH158 BH155
BH167
BH158am BMH76
BH167s
BH200a
F27d
BH202
F30
CHIP vERSION
BH203a
F51
BH203b
F54
BH203c
F54s
BH204 C2
F60
BH300 C4
F60d
BH301
M208a
BH303
M208b
BH403a
M208c
BH405
M208d
M208e
M208f
S268/W1
TO39
W2

1-46
Case styles
Cb=0.1pF E ∅ 1.7 ∅ 2.1 .067 DIA .083 DIA Cb=0.1pF E 0.09 0.11 .0035 .0043
A22e D ∅ 0.35 ∅ 0.41 .014 DIA .016 DIA
BH15 D 0.28 0.48 .011 .019
C 25.4 1 C 3.82 4.58 .15 .18
B 25.4 1 B 0.15 0.35 .006 .014
A 4 4.4 .157 .173 A 1.17 1.37 .046 .054

SYM min max min max SYM min max min max
BOL MILLIMETERS INCHES BOL MILLIMETERS INCHES
Cb=0.16pF E 0.08 0.12 .003 .005 Cb=0.2pF

BH16 D 0.45 0.55 .018 .022
BH28 C 2.04 2.50 .080 .098
B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA

C 4.58 5.58 .180 .220
A ∅ 3.00 ∅ 3.20 .118 DIA .126 DIA
B 0.66 0.86 .026 .034
SYM min max min max
A 2.4 2.6 .094 .102
BOL MILLIMETERS INCHES
SYM min max min max
Cb=0.25pF H 5.14 5.93 .202 .233

Cb=0.2pF G 1.37 1.77 .054 .070
BH32 BH35
C 3.5 3.9 .138 .154 F 1.78 1.98 .070 .078
B ∅ 3.86 ∅ 4.26 .152 DIA .168 DIA E 1.37 1.77 .054 .070
A ∅ 5.64 ∅ 6.04 .222 DIA .238 DIA D ∅ 1.52 ∅ 1.62 .060 DIA .064 DIA
SYM min max min max C ∅ 3.96 ∅ 4.16 .156 DIA .164 DIA
BOL MILLIMETERS INCHES B ∅ 3.05 ∅ 3.25 .120 DIA .128 DIA
A ∅ 1.52 ∅ 1.62 .060 DIA .064 DIA

SYM min max min max
Cb=0.1pF E 0.08 0.12 .003 .005 Cb=0.25pF E 0.05 0.10 .002 .004
BH36 D 0.4 0.6 .016 .024
BH100 D 0.55 0.65 .022 .026
C 5.7 5.9 .224 .232 C 5 .197
B 0.28 0.48 .011 .019 B 6.30 6.40 .248 .252
A 1.7 1.9 .067 .075 A 2.35 2.45 .093 .096


1-47
Case styles
Cb=0.15pF Cb=0.4pF F 0.70 .028

E 0.05 0.15 .002 .006
BH101 D 0.55 0.65 .022 .026
BH141 E 4.70 5.10 .185 .201
D 12.8 13.4 .504 .526

C 5 .197
C 6. 40 UNF-3A
B 0.28 0.48 .011 .019
B ∅ 5.20 ∅ 5.40 .205 DIA .203 DIA
A 2.3 2.7 .091 .106
SYM min max min max A ∅ 6.50 ∅ 6.70 .256 DIA .263 DIA
SYM min max min max
Cb=0.2pF G 0.1 0.5 .004 .020 Cb=0.2pF

BH142a F 0.06 0.10 .0024 .0039 BH142b
E 0.55 0.65 .022 .026
D 2.5 .098
C 2.10 2.70 .083 .106 B 1.24 1.58 .049 .062
B 1.24 1.58 .049 .062 A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA
A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA SYM min max min max
SYM min max min max BOL MILLIMETERS INCHES
Cb=0.2pF Cb=0.2pF
BH142c E 0.06 0.10 .0024 .0039 BH142d E 0.06 0.10 .0024 .0039
D 0.55 0.65 .022 .026 D 0.55 0.65 .022 .026
C 5 .197 C 5 .197
B 1.24 1.58 .049 .062 B 1.24 1.58 .049 .062
A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA
BH142e Cb=0.2pF E 0.06 0.10 .0024 .0019 BH142f Cb=0.2pF E 0.06 0.10 .0024 .0039
D 0.55 0.65 .022 .026 D 0.55 0.65 .022 .026
C 5 .197 C 10 .394
B 1.24 1.58 .049 .062 B 1.24 1.58 .049 .062
A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA A ∅ 1.90 ∅ 2.20 .075 DIA .087 DIA

1-48
Case styles
Cb=0.1pF E 0.08 0.12 .003 .005 Cb=0.25pF

BH143 D 0.45 0.55 .094 .102
BH146 E 0.08 0.12 .003 .005
D 0.48 0.52 .019 .020

C 7.60 .299
C 3.75 .148
B 0.45 0.55 .018 .022
B 0.86 1.06 .034 .042
A ∅ 2.40 ∅ 2.60 .094 .102
SYM min max min max A 2.3 2.7 .091 .106
SYM min max min max
Cb=0.25pF Cb=0.25pF
BH147 BH151
E 0.08 0.12 .003 .005 E 0.08 0.12 .003 .005
D 0.48 0.52 .019 .020 D 0.35 0.45 .014 .018
C 3.75 .148 C 3.70 4.30 .147 .169
B 0.86 1.06 .034 .042 B 0.20 0.30 .008 .012
A 2.3 2.7 .091 .106 A 1.17 1.37 .046 .054

Cb=0.05pF E 0.08 0.12 .003 .005 Cb=0.13pF

BH152 BH153 E 0.08 0.12 .003 .005
D 0.35 0.45 .014 .018
D 0.45 0.55 .018 .022
C 3.70 4.30 .147 .169
C 6.15 6.55 .242 .258
B 0.20 0.30 .008 .012
B 0.91 1.01 .036 .040
A 1.17 1.37 .046 .054
A 1.68 1.88 .066 .074
SYM min max min max
SYM min max min max
BH154 Cb=0.13pF E 0.08 0.12 .003 .005 Cb=0.13pF

BH155
E 0.08 0.12 .003 .005
D 0.45 0.55 .018 .022
D 0.45 0.55 .018 .022
C 6.15 6.55 .242 .258
C 6.15 6.55 .242 .258
B 0.91 1.01 .036 .040
B 0.91 1.01 .036 .040
A 1.68 1.88 .066 .074
SYM min max min max

1-49
Case styles
Cb=0.4pF Cb=0.4pF
BH158 D 4.00 4.50 .157 .177 BH158am D 4.1 4.4 .16 .173
C ∅ 5.10 ∅ 5.50 .200 DIA .216 DIA C ∅ 5.2 ∅ 5.5 .204 DIA .216 DIA
B 4.90 5.30 .193 .209 B 4.7 5.2 .185 .205
A ∅ 6.50 ∅ 6.70 .256 DIA .264 DIA A ∅ 5.7 ∅ 6.1 .224 DIA .240 DIA
Cb=0.12pF G 1.95 2.22 .077 .087 Cb=0.12pF F 0.71 0.81 .028 .032
BH165 F 0.71 0.81 .028 .032
BH165s E ∅ 0.61 ∅ 0.66 .024 DIA .026 DIA
E ∅ 0.61 ∅ 0.66 .024 DIA .026 DIA D 1.53 1.78 .060 .070
D 1.53 1.78 .060 .070 C ∅ 1.22 ∅ 1.32 .048 DIA .052 DIA
C ∅ 1.22 ∅ 1.32 .048 DIA .052 DIA B 1.95 2.22 .077 .087
B 2.65 3.04 .104 .120 A ∅ 2.00 ∅ 2.06 .079 DIA .081 DIA
A ∅ 2.00 ∅ 2.06 .079 DIA .081 DIA SYM min max min max
SYM min max min max BOL MILLIMETER INCHES
BOL MILLIMETER INCHES
Cb=0.12pF G 1.86 2.06 .073 .081 Cb=0.12pF

F 0.71 0.81 .028 .032 BH167s F 0.71 0.81 .028 .032
BH167
E ∅ 0.61 ∅ 0.66 .024 DIA .026 DIA
E ∅ 0.61 ∅ 0.66 .024 DIA .026 DIA
D 1.55 1.75 .061 .069
D 1.55 1.75 .060 .070
C ∅ 1.22 ∅ 1.32 .048 DIA .052 DIA
C ∅ 1.22 ∅ 1.32 .048 DIA 052 DIA
B 1.86 2.06 .073 .081
B 2.57 2.87 .101 .113
A ∅ 1.42 ∅ 1.62 .056 DIA .064 DIA
A ∅ 1.42 ∅ 1.62 .056 DIA .064 DIA
SYM min max min max
SYM min max min max

1-50
Case styles
Cb=0.4pF L 43° 47° 43° 47° Cb=0.15pF M 43° 47° 43° 47°
K 5.49 5.89 .216 .232 L 4.12 4.52 .162 .178
BH202
J ∅ 30.48 ∅ 31.50 1.200 DIA 1.240 DIA K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA
I 6.30 6.40 .248 .252 J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA
BH200a
H 18.26 18.67 .719 .735 I 1.25 1.29 .049 .051
G 24.64 24.89 .970 .980 H 16.30 16.70 .642 .658
F ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA G 6.30 6.40 .248 .252
E 0.10 0.127 .004 .005 F 0.23 0.27 .009 .011
D 6.78 7.19 .267 .283 E 2.50 2..67 .098 .105
C 3.86 4.27 .152 .168 D 18.26 18.67 .719 .735
B 2.50 2.667 .098 .105 C 24.64 24.89 .970 .980
A ∅ 12.50 ∅ 12.90 .492 DIA .508 DIA B 6.78 7.19 .267 .283
SYM min max min max
Cb=0.15pF M 43° 47° 43° 47° Cb=0.15pF M 43° 47° 43° 47°
BH203a L 4.12 4.52 .162 .178 BH203b L 4.12 4.52 .162 .178
K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA
J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA
I 1.25 1.29 .049 .051 I 1.25 1.29 .049 .051
H 16.30 16.70 .642 .658 H 16.30 16.70 .642 .658
G 6.30 6.40 .248 .252 G 6.30 6.40 .248 .252
F 0.23 0.27 .009 .011 F 0.23 0.27 .009 .011
E 2.50 2.67 .098 .105 E 2.50 2.67 .098 .105
D 18.26 18.67 .719 .735 D 18.26 18.67 .719 .735
C 24.64 24.89 .970 .980 C 24.64 24.89 .970 .980
B 6.78 7.19 .267 .283 B 6.78 7.19 .267 .283
A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA
Cb=0.15pF M 43° 47° 43° 47° Cb=0.15pF M 43° 47° 43° 47°
BH203c L 4.12 4.52 .162 .178 BH204 L 4.12 4.52 .162 .178
K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA
J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA J ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA
I 1.25 1.29 .049 .051 I 1.25 1.29 .049 .051
H 16.30 16.70 .642 .658 H 16.30 16.70 .642 .658
G 6.30 6.40 .248 .252 G 6.30 6.40 .248 .252
F 0.23 0.27 .009 .011 F 0.23 0.27 .009 .011
E 2.50 2.67 .098 .105 E 2.50 2.67 .098 .105
D 18.26 18.67 .719 .735 D 18.26 18.67 .719 .735
C 24.64 24.89 .970 .980 C 24.64 24.89 .970 .980
B 6.78 7.19 .267 .283 B 6.78 7.19 .267 .283
A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA A ∅ 9.4 ∅ 9.64 .370 DIA .380 DIA

1-51
Case styles
Cb=0.2pF
Cb=0.4pF
BH300 BH301
J 1.52 1.62 .060 .064
I 3.25 3.45 .128 .136
I 2.82 3.02 .111 .119
H 5.60 6.00 .220 .236
H 4.42 4.82 .174 .190
G 6 - 32 UNC - 3A
G 4 - 40 UNC - 3A
F 2.97 3.38 .177 .133
F 2.16 2.56 .85 .101
E 0.20 0.30 .008 .012
E 0.18 0.20 .007 .008
D 20 - .787 -
D 15.67 16.18 .617 .637
C 6.30 6.40 .248 .252
C 4.70 4.80 .185 .189
B 13.95 15.05 .549 .593
B 9.46 10.54 .372 .415
A ∅ 6.5 ∅ 6.7 .256 DIA .264 DIA
A ∅ 3.00 ∅ 3.20 .118 DIA .126 DIA
SYM min max min max
SYM min max min max
Cb=0.4pF I 3.25 3.45 .128 .136 Cb=0.3pF N - 3 - .120

BH303 H 5.60 6.00 .220 .236 M Typical : 45°
G 6 - 32 UNC - 3A BH403a L 9.68 10.08 .381 .397
F 2.97 3.38 .177 .133 K ∅ 10.46 ∅ 10.87 .412 DIA .428 DIA
E 0.20 0.30 .008 .012 J 2.72 3.12 .107 .123
D 20 - .787 - I 1.57 1.98 .062 .078
C 6.30 6.40 .248 .252 H 0.10 0.15 .004 .006
B 13.95 15.05 .549 .593 G 1.78 2.03 .070 .080
A ∅ 6.5 ∅ 6.7 .256 DIA .264 DIA F 4.39 4.64 .173 .183
SYM min max min max E 1.90 2.16 .075 .085
BOL MILLIMETERS INCHES D 25.4 - 1 -

C 10 - 32 UNF 3A
B ∅ 12.50 ∅ 12.90 .492 DIA .508
A 18.67 19.43 .735 .765
SYM min max min max
Cb=0.4pF J 0.97 1.07 .038 .042

Cb=0.15pF K 0.50 0.70 .020 .028
I 2.49 2.59 .098 .102 J 0.20 0.24 .008 .010
BH405
H 2.9 3.1 .114 .122 BMH76 I 1.95 2.15 .077 .085
G 22.4 22.6 .882 .890 H 1.47 1.67 .058 .066
F 0.20 0.30 .0079 .0118 G 5.1 5.3 .201 .209
E 6.1 6.5 .240 .256 F 3.18 3.68 .125 .145
D 9.2 9.6 .362 .378 E ∅ 2.36 ∅ 2.52 .093 DIA .099 DIA
C 5/16 - 24 UNF - 2A D 3.1 3.3 .122 .130
B 14 14.2 .551 .559 C 4 4.2 .157 .165
A ∅ 19.6 ∅ 19.8 .772 DIA .780 DIA B 3.02 3.22 .119 .127
BOL MILLIMETERS INCHES SYM min max min max

1-52
BELGIUM: +32 (0) 2 715 90 20 GERMANY: +49 (0) 89 51 64-0 NORDIC: +46 (0) 8 590 303 00 NL: NL: +31 (0) 79 3461430
FRANCE: +33 (0) 1 49 88 49 00 ITALY: +39 (0) 2 58 01 91 06 SPAIN: +34 (0) 1 320 41 60 +31 UK: (44) 1256 883340
Case styles
C2J 1740 1800 68.50 70.87 C4

C2 C2H 1440 1500 56.69 59.06 C4G 1500 2500 59.06 98.43
C2G 1140 1200 44.88 47.24 C4F 1000 1500 39.37 59.06
C2E 940 1000 37.01 39.37 C4E 700 1000 27.56 39.37
C2D 840 900 33.07 35.43 C4D 500 700 19.69 27.56
C2C 740 800 29.13 31.50 C4C 400 500 15.75 19.69
C2B 540 600 21.26 23.62 C4B 300 400 11.81 15.75
C2A 340 400 13.39 15.75 C4A 200 300 7.87 11.81
CON min max min max CON min max min max
FIG A (µm) A (µ”) FIG A (µm) A (µ”)
F27d Cb=0.18pF
H ∅ 2.01 ∅ 2.05 .079 DIA .081 DIA
G ∅ 2.95 ∅ 3.15 .116 DIA .124 DIA F30 Cb=0.25pF

F ∅ 1.55 ∅ 1.59 .061 DIA .063 DIA D 0.4 0.6 .016 .024
C 1.4 1.6 .055 .063

E ∅ 1.55 ∅ 1.59 .061 DIA .063 DIA
B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA
D 5.15 5.65 .202 .222
A ∅ 2.94 ∅ 3.14 .116 DIA .124 DIA
C 1.55 1.59 .061 .063
SYM min max min max
B 1.74 1.82 .069 .072
A 1.55 1.59 .061 .063
SYM min max min max
F51 Cb=0.1pF Cb=0.2pF

F54 F 1.0 1.2 .039 .047
D 1.47 1.67 .058 .066
E 0.40 0.47 .016 .019
C ∅ 1.47 ∅ 1.67 .058 DIA .066 DIA
D ∅ 0.61 ∅ 0.66 .024 DIA .029 DIA
B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA
C ∅ 1.19 ∅ 1.35 .047 DIA .053 DIA
A 4.9 5.3 .193 .209
B 1.70 2.00 .067 .079
SYM min max min max
A ∅ 2.00 ∅ 2.16 .079 DIA .085 DIA
SYM min max min max

1-53
BELGIUM: +32 (0) 2 715 90 20 GERMANY: +49 (0) 89 51 64-0 NORDIC: +46 (0) 8 590 303 00
FRANCE: +33 (0) 1 49 88 49 00 ITALY: +39 (0) 2 58 01 91 06 SPAIN: +34 (0) 1 320 41 60
Case styles
Cb=0.2pF Cb=0.2pF F 1.51 1.63 .059 .064

D 0.36 0.46 .014 .018 F60
F54s E 1.81 1.95 .071 .077
C 0.84 0.94 .073 .047
D 3.76 4.21 .148 .166
B ∅ 1.19 ∅ 1.35 .047 DIA .053 DIA
C ∅ 1.52 ∅ 1.62 .060 DIA .064 DIA
A ∅ 2.00 ∅ 2.16 .079 DIA .085 DIA
B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA
SYM min max min max
BOL MILLIMETERS INCHES A ∅ 2.95 ∅ 3.15 .116 DIA .124 DIA

SYM min max min max
Cb=0.12pF G 0.1 0.4 .004 .015

F60d Cb=0.25pF M208a
F 1.52 1.64 .060 .065 F 0.06 0.1 .0024 .004
E 0.95 1.09 .037 .043 E 0.55 0.65 .022 .026
D 2.91 3.36 .115 .132 D 2.5 .100
C ∅ 1.52 ∅ 1.62 .060 DIA .064 DIA C 1.3 1.7 .052 .068
B ∅ 1.93 ∅ 2.13 .076 DIA .084 DIA B 0.95 1.35 .037 .053
A ∅ 2.95 ∅ 3.15 .116 DIA .124 DIA A ∅ 1,07 ∅ 1,47 .042 DIA .058 DIA
BOL MILLIMETER INCHES BOL MILLIMETER INCHES
Cb=0.12pF E 0.06 0.1 .0024 .004

M208c
M208b D 0.55 0.65 .022 .026
Cb=0.12pF C 5 .200
B 0.95 1.35 .037 .053

B 0.95 1.35 .037 .053
A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA
A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA
SYM min max min max
SYM min max min max
Cb=0.12pF Cb=0.12pF
M208d M208e
E 0.06 0.1 .0024 .004 E 0.06 0.1 .0024 .004
D 0.55 0.65 .022 .026 D 0.55 0.65 .022 .026
C 5 .200 C 5 .200
B 0.95 1.35 .037 .053 B 0.95 1.35 .037 .053
A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA

1-54
BELGIUM: +32 (0) 2 715 90 20 GERMANY: +49 (0) 89 51 64-0 NORDIC: +46 (0) 8 590 303 00 NL: NL: +31 (0) 79 3461430
FRANCE: +33 (0) 1 49 88 49 00 ITALY: +39 (0) 2 58 01 91 06 SPAIN: +34 (0) 1 320 41 60 +31 UK: (44) 1256 883340
Case styles
Cb=0.12pF Cb=0.2pF I 0.38 0.62 .015 .024

M208f S268/W1
H 0.64 0.88 .025 .035
F 0.06 0.1 .0024 .004 G 0.51 0.60 .020 .024
E 0.55 0.65 .022 .026 F ∅ 2.44 ∅ 2.64 .096 DIA .104 DIA
D 5 .200 E 0.21 0.31 .008 .012
C 9.8 10.2 .392 .408 D 1.71 2.00 .067 .079
B 0.95 1.35 .037 .053 C 3 - 48 UNC 2A
A ∅ 1.07 ∅ 1.47 .042 DIA .058 DIA B 5.01 5.46 .197 .215
BOL MILLIMETER INCHES SYM min max min max
Cb=0.11pF E 2.69 2.89 .106 .114 Cb=0.24pF E Typical 0,2 Typical .008
SMD3
D 3.71 3.91 .146 .154 SMD4 D Typical 1 Typical .039
C 4.4 4.6 .173 .181 C 0.3 0.8 .012 .031
B ∅ 2.19 ∅ 2.39 .086 DIA .094 DIA B 2.9 3.5 .114 .138
A ∅ 2.44 ∅ 2.64 .096 DIA .104 DIA A 2 2.3 .079 .091
Cb=0.24pF E Typical 0,20 Typical .008

SMD6
D Typical 1.20 Typical .047
SMD8
C 0.3 0.8 .012 .031
B 4.70 5.2 .185 .205 B 4.70 5.2 .185 .205
A 2.5 2.8 .098 .110 C 0.20 0.38 .008 .015
Cb=0.2pF
SOT23
SOD323 K 0.1 0.13 0.004 0.005
H 1.70 .0669 J 0.53 0.56 0.021 0.022
G 0.20 .0078 I 0.05 0.1 0.002 0.0004
F 0.15 .0059 H 1.07 1.14 0.042 0.045
E 0.05 .0020 G 0.43 0.46 0.017 0.018
D 0.30 .0118 F 1.78 2.04 0.070 0.080
C 1.10 .043 E 0.94 typ. 0.037 typ.

D 0.43 0.45 0.017 0.020
B 1.25 .049
C 2.36 2.49 0.093 0.098
A 2.50 .098
B 1.3 1.35 0.051 0.053
SYM Typical Typical
A 2.84 3.02 0.112 0.119
SYM min max min max
BOL Millimeters Millimeters Inches Inches

1-55
BELGIUM: +32 (0) 2 715 90 20 GERMANY: +49 (0) 89 51 64-0 NORDIC: +46 (0) 8 590 303 00
FRANCE: +33 (0) 1 49 88 49 00 ITALY: +39 (0) 2 58 01 91 06 SPAIN: +34 (0) 1 320 41 60
Case styles
Cb=0.2pF
SOT143 TO39
I ∅ 8.3 ∅ 8.5 .327 DIA .335 DIA
J max 8°
H ∅ 0.41 ∅ 0.48 .016 DIA .019 DIA
I 0.10 .0039
H 0.12 .0047 G 44° 46° 44° 46°
G 1.90 .0075 F 0.71 0.81 .028 .032
F 0.40 .0157
E 9.40 10.40 .370 .409
E 0.80 .0315
D 12.7 .500
D 1.30 .051
C 1.10 .043 C 4.98 5.18 .196 .204
B 2.60 .102 B 6.30 6.40 .248 .252
A 2.90 .114
A ∅ 9.10 ∅ 9.30 .358 DIA .366 DIA
SYM Typical Typical
SYM min max min max
Cb=0.15pF
W2
H 0.71 0.81 .028 .032
G 0.45 0.55 .020 .022
F 3 - 48 UNC - 3A
E 0.61 0.81 .024 .032
D ∅ 1.17 ∅ 1.37 .046 DIA .054 DIA
C 3.40 3.60 .134 .142
B ∅ 2.46 ∅ 2.66 .097 DIA .105 DIA
A 4.38 4.68 .172 .184

SYM min max min max

1-56

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MICROWAVE SILICON COMPONENTS

MICROWAVE SILICON COMPONENTS

TUNING VARACTORS DIODES

POWER GENERATION DIODES

TEKELEC TEMEX’s products are available in a complete assortment of packages including:

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SILICON PIN DIODES

SURFACE MOUNT PACKAGE

HIGH VOLTAGE PIN DIODES

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HOW TO SPECIFY A PIN DIODE

1. Application 8. Maximum loss expected

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SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES

• Low series resistance TEKELEC TEMEX uses its proprietary

Outline drawing Applications

The DH50XXX series PIN diodes are offered in

Note: To reduce the distortion, it is necessary to

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Electrical characteristics at 25° C

(1) : Other breakdown value on request (4) : RSF at IF = 5 mA

Operating junction (Tj) : -55° C to +150° C

min max min max

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SURFACE MOUNT ATTENUATING SILICON PIN DIODES

• Large dynamic range TEKELEC TEMEX uses its proprietary

Outline drawing Applications

Typical applications include variable RF

Note: To reduce the distortion, it is necessary to

(Top view) ÎHF : RF peak current (A)

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Electrical characteristics at 25° C

I Zone Junction Reverse Carrier

(1) Other I zone thicknesses on request

Operating juction (Tj) : - 55° C to + 150° C

Typical performance curve

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LOW COST SQUARE CERAMIC PACKAGE PIN DIODES

• Low loss, low distortion TEKELEC TEMEX is manufacturing a square PIN

Pinning Outline drawing

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Electrical characteristics at 25° C

Applicable Total Forward Minority

(1) diode brazed on infinite copper heat sink at 25° C

Operating junction (T j) : -55° C to +150° C

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SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES

Applicable Break- Forward Series Minitory Max Power

(1) Diode brazed on infinite copper heat sink Temperature ranges:

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NON MAGNETIC SQUARE CERAMIC PACKAGE

• Non magnetic package TEKELEC TEMEX is manufacturing a non

Pinning Outline drawing

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Applications Maximum ratings

TEKELEC TEMEX non magnetic SQP diodes are OPERATING SOLDERING

STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS

(1) diode brazed on infinite copper heat sink

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