5/28/2018 RAM Se que ntia l ATPG - slide pdf.

c om

Techniques to Improve Quality of Memory Interface Tests

in SoCs Using Synopsys TetraMAX®’s RAM Sequential
ATPG

Sanjay Krishna H V
Srivaths Ravi

Texas Instruments
Bangalore, India

www.ti.com

At-speed testing of memory interfaces in 45nm and below technologies has become critical for
defect screening as well as for ascertaining the correct operational frequency of a device (fmax).
In this paper, we describe our experience of using TetraMAX‟s RAM sequential ATPG for a
production 45nm SoC to generate high quality memory interface tests. We discuss the
advantages and challenges involved in using the native tool features, suggest DFT hooks that
assist the tool in ATPG, and propose a flow for using the native sequential pattern generation
engine in an optimum manner to achieve high coverage of the targeted faults with low pattern
counts. Results on our production SoC show that the achieved coverage is 3.5 times more than
that what is achieve-able conventionally. Further, the pattern count reduced by nearly 75%, with
an order of magnitude runtime improvement. We also share results from silicon that clearly show
the impact of using these tests on the fmax of a device (silicon data collection underway).

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Table of Contents
1 Introduction and Motivation ................................................................................................ 3
2 Details of Production SoC .................................................................................................. 5
3 Conventional RAM Sequential ATPG................................................................................. 5
4 Challenges with Conventional RAM Sequential ATPG ...................................................... 7
5 Techniques to improve the performance of RAM Sequential ATPG .................................. 7
5.1 Memory interface fault list segregation and pruning .................................................... 8
Table 2: Effect of fault pruning ...................................................................................... 8
5.2 Exploit the BIST resources for ATPG .......................................................................... 8
5.2.1 Capture off BIST (COB) ........................................................................................ 8
5.2.2 Launch off BIST (LOB)....................................................................................... 10
5.2.3 DFT Careabouts ................................................................................................... 11
6 Results ................................................................................................................................ 12
7 Conclusions ........................................................................................................................ 13
8 References .......................................................................................................................... 13

Table of Figures
Figure 1. Differences in paths from/to a typical memory in various modes of operation .............. 3
Figure 2. Setup slack histogram of BIST versus functional paths to different memories of Chip A
......................................................................................................................................................... 4
Figure 3. Memory setup slack difference distribution view for the data in Figure 2 ..................... 4
Figure 4. A memory tested using conventional RAM sequential ATPG ....................................... 6
Figure 5. Sequence of Events in Capture off BIST (COB) based RAM sequential ATPG ............ 9

Figure
(COB) 6. Constraints,
based switchesATPG
RAM sequential and sequential capture procedure used in Capture off BIST
........................................................................................... 10
Figure 7. Sequence of Events in Launch off BIST (LOB) based RAM sequential ATPG ........... 10
Figure 8. Constraints, switches and sequential capture procedure used in Launch off BIST (LOB)
based RAM sequential ATPG ....................................................................................................... 11
Figure 9. Pipelining Bistmode control of the memory ................................................................. 12
Figure 10. Projected fmax comparisons between LOC TFT and RAM sequential ATPG patterns
....................................................................................................................................................... 13

Table of Tables
Table 1. Memory details of CHIP A ............................................................................................... 5
Table 2. Performance of Conventional RAM sequential ATPG on CHIP A ................................ 7
Table 3. CHIP A: Comparison of proposed and conventional RAM sequential ATPG............... 12

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1 Introduction and Motivation

Conventional techniques to address at-speed testing of memory interfaces rely on functional tests
that are too expensive to design (hence not available) or structural tests that are inadequate in
their defect screening (mismatch between functional and test paths). Since structural tests such as
memory BIST are primarily targeted to identify defects within the memory, ATPG patterns must
be used additionally to target the memory interface logic. But bypassing the memory array and
using only the collar flops during ATPG typically results in false coverage since the paths
to/from test logic are likely to be associated with relaxed timing compared to true functional
path.

This observation can be understood using Figure 1, where an example memory array is
shown with address and data inputs D_mem and ADR_mem, and output Q_mem respectively.
The memory collar added for structural testing (BIST/ATPG) includes multiplexers and
observe/control flops to provide inputs/observe outputs in functional and test modes of operation.
The modified memory IP includes both the memory array and the memory collar.

bist
functional Q
D

LEGEND
Q_mem
bist TD
functional Functional use mode
D_mem
TM
Memory Pbist/BIST use mode
Array
ATPG use mode
functional ADR_mem

ADR

bist
TADR

Figure 1. Differences in paths from/to a typical memory in various modes of operation

The different paths in the functional and test modes of operation in Figure 1 are associated
with different timing characteristics. To empirically understand this problem, Figure 2 (next
page) shows data from our 45nm production SoC (labeled Chip A henceforth). For different
memories in the design, Figure 2 shows the worst-case setup slack for timing paths to the
memory via the BIST and functional interfaces. The data clearly shows that for these memories,
the BIST interface timing paths have relaxed timing compared to the functional timing paths in
37 out of 39 memories shown. Figure 3 summarizes this data as a setup slack difference
distribution and shows that most of the memories have a setup slack difference higher than1.5ns
(upto 2.3ns).

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BIS T Functional Setup Slack Histogram of BIST versus Functional Paths to

Different Memories of Chip A
7000

) 6000
s
p
( 5000
k
c
a
l
s 4000
p
u
t 3000
e
S
2000

1000

0
1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39

Memory id
Figure 2. Setup slack histogram of BIST versus functional paths to different memories of Chip A

18
Me mory Setup Slack Differe nce Distribution
16

14
s
e
ir 12
o
m
e 10
m
f
o
r 8
e
b
m 6
u
N
4

-500 0 500 1000 1500 2000 2500 3000

Setup slack difference (ps)

Figure 3. Memory setup slack difference distribution view for the data in Figure 2

The above data clearly indicates that test coverage of memory interface paths using only
test paths will lead to a test escape or DPPM problem since the ignored functional paths are
significantly more speed limiting. ATPG tools have begun to take cognizance of this issue and

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Synopsys TetraMAX‟s RAM sequential ATPG is a critical feature that addresses this gap – it
allows the DFT engineer to generate tests that target memory interface faults using complete or
partial functional paths in a scan environment, using its native sequential ATPG engine.

As mentioned in the abstract, this paper describes our experience of using TetraMAX‟s

RAM sequential
tests. We proposeATPG
a flow for
for ausing
production 45nm
the native SoC to pattern
sequential generate high quality
generation memory
engine interface
in an optimum
manner to achieve high coverage of the targeted faults with low pattern counts. We will also
suggest DFT hooks that ease the process of RAM sequential ATPG. Results on our production
SoC show that the achieved coverage is 3.5 times more than that what is achieve-able
conventionally. Further, the pattern count reduced by nearly 75%, with an order of magnitude
runtime improvement. We also share results from silicon that clearly show the impact of using
these tests on the fmax of a device

2 Details of Production SoC

CHIP A, the 45nm SoC used in this work has approximately 400k flip-flops as a part of the top-
level scan architecture. The design includes both synchronous and asynchronous memories
operating in different clock domains. Table 1 indicates the number of each kind, along with the
number of associated clock domains. Both the synchronous single and multi port memories are
associated with one cycle read and write latencies.

Table 1. Memory details of CHIP A

Synchronous single Synchronous multi Asynchronous
port memories port memories memories
Number of 41 16 37
top-level memories
Number of 7 3 5
clock domains

As seen later from the results presented in the paper, even for a medium-sized SoC with this
many memories, the ATPG tool finds it challenging to perform RAM Sequential ATPG in an
effective manner.

3 Conventional RAM Sequential ATPG

In conventional RAM sequential ATPG, pattern generation on memories with BIST collars is
performed as depicted in Figure 2. A typical memory would have a signal (labeled “Bistmode” in
Figure 2) to enable BIST interface of the memory and a memory array bypass signal (labeled
“ATPGmode” in Figure 2) used in ATPG mode to bypass the memory array. The memory array
is associated with a memory enable signal that enables memory array operations as well as
read/write signal.

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ATPGmode = 0
bist

M M M M D Q
e e e e C
m m m m a
p
o o o o tu
ry ry ry ry re Q_mem
w w R R bist TD
r r e e D functional
D_mem
ite ite ad ad 2
functional Bistmode = 0
ADR_mem
D
ADR
ADR
Memory
bist TADR Array
TADR Write enable/
EN Read dsable
WE
WE Path
TWE
bist sensitized in a
Q Memory Enable
conventional
EN ram
TEN sequential
bist
ATPG
L L L L C
CLK CLK

SHIFT Phase L = Launch

C = Capture
Capture Phase
Figure 4. A memory tested using conventional RAM sequential ATPG

In order to use the functional paths to/from memory, ATPG would be done with
Bistmode = 0, ATPGmode =0, Memory enable = 1. The tool would then follow a sequence in
capture phase of the pattern as explained below to achieve coverage on the memory input and
output interface pins.

Memory input
of memory, interface
below fault testing:
is a typical sequenceIn order to speed
done at sensitize and capture
during observephase
the input interface faults
of ATPG.

Step 1: Write D1 into address say A1. (To initialize data and address lines of the targeted
memory)
Step 2: Write D2 into another address A2. (To create transition on the data and address
lines)
Step 3: Read D2 from address A2. (Observe the transition on the input data and address
lines by reading the data on the memory output)
Step 4: Capture. (Capture the response on flops interfacing the memory output)

Memory output interface fault testing: In order to detect the output interface faults of memory,
below are the typical steps followed.

Step 1: Write D1 into address say A1. (To initialize memory location A1)
Step 2: Write D2 into another address A2. (To initialize memory location A2)
Step 3: Read D1 from address A1. (To initialize output pins of the targeted memory)
Step 4: Read D2 from address A2. (To create transition on the faults on output pins of the
targeted memory)

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Step 5: Capture. (Capture the response on flops interfacing the memory output)

4 Challenges with Conventional RAM Sequential ATPG

When conventional RAM sequential ATPG was run on CHIP A (section 2) using Synopsys
TetraMAX to target memory interface faults using the transition delay fault model, there were
clear challenges from coverage, the associated pattern count and runtime. Though usage of some
Tetramax switches to sensitize the memory faults as indicated below improved the overall
pattern count the required coverage goals were not achieved.

set_simulation -store_memory_contents -last

The data is as indicated in Table 2.

Table 2. Performance of Conventional RAM sequential ATPG on CHIP A

RAM Sequential ATPG Coverage #Patterns Run-time
Methodology
Conventional 25.3% 3028 12087 s

It is intuitive to surmise that the biggest challenge to the ATPG tool is dealing with the
high sequential controllability and observability on memory interface pins when a sequence of
write and read operations are done using functional paths only (although the flops are
initializable using scan). Each of the memory input signals is typically associated with complex
combinational decoding logic in the functional cloud shown in Figure 4. Due to this, the ATPG
tool has a challenging task of computing the values required for multiple flops across several
timeframes that will cause the transitions on memory address/data/output lines as mentioned in
Section 3.
For example, from the waveform in Figure 4, it can be seen that to gain the coverage on
Q pins of the memory, complementary data has to be written to two different locations for which
WE (write enable) needs to be constant for at least 2 cycles and EN (Memory enable) have to be
static for at least 4 cycles. But when multiple flops of same clock domain have to be controlled
to achieve these requirements on the memory pins in specific cycles, the limitations of sequential
ATPG play a role and hence, pattern coverage and runtime get impacted.

5 Techniques to improve the performance of RAM Sequential ATPG

Techniques to address the challenges that ATPG faces for RAM sequential ATPG can be
developed from two directions.
Memory interface fault list segregation and pruning: Targeting full list of memory


interface faults in one pattern generation run leads to unnecessary overheads. Segregating
into input and output faults, and further using information from timing analysis to present
a reduced fault list to the ATPG tool, ensures that the ATPG tool focuses efficient and
maximal effort on critical faults.
 Exploit the DFT (BIST) resources in the design: In a typical SoC, memory BIST logic
has controllability/observability paths to/from memory test interface. For example, since
the memory BIST controller is scanned, memory test pins are easily controllable. Further,
with the presence of pipeline flops (which are also scanned) on memory BIST data,
address, write enable, memory enable, etc., we gain better controllability.

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5.1 Memory interface fault list segregation and pruning

Fault segregation and filtering was done to create two lists of critical memory output and input
interface faults.
Memory_op_int.flts : To obtain the functionally critical memory output interface paths,
static timing analysis was done using Synopsys PrimeTime (PT) in the TFT capture
mode, with ATPGMODE pin of all memories set to „0‟ through case analysis. All the
worst case timing paths through Q pins of the memories were reported. All paths with
flop endpoints that were non-BIST were chosen.
Memory_ip_int.flts : To cover functionally critical memory input interface paths, the PT
session was used to report all the worst case timing paths to the memories. All paths with
Start-points from Non-BIST Flop paths were then chosen.

After using the above method of fault filtering, we could reduce the number of faults to be
targeted for pattern generation to ~20.1% of the full list of memory interface faults. These faults
were roughly associated with 39 of the total number of memories in the design (Table 2).

Table 2: Effect of fault pruning

CHIP A Synchronous Single Synchronous Multi Asynchronous
port memories port memories memories
Technology 45nm 45nm 45nm
#Total Top-Level 41 16 37
Memories RAMs
# Memory Clock 3 3 1
Domains (Clock
Groups)
#Top-Level Critical 18 16 5
Memories RAMs

5.2 Exploit the BIST resources for ATPG

Once the two sets of faults are created, we adopt a two phased pattern generation approach using
BIST resources described in [2,3] that fetches higher quality coverage on the functional interface
of the memory. In this section, we discuss suitable constraints, spf changes and switches to be
used in TetraMAX for implementing these techniques, along with ATPG friendly DFT
careabouts.

5.2.1 Capture off BI ST (COB)

In order to gain coverage on functional input pins of the memory, the ATPG tool can be guided
to generate patterns such that the that the memory inputs can be controlled through functional
interface pins, but the data read from the memory can be captured through the BIST interface of
the memory. This technique is therefore called Capture off BIST (COB) and is shown in Figure
5. Clearly, it helps reduce the overall pattern generation effort to observe the faults.

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The fault list used for ATPG is Memory_ip_int.flts as described in Section 5.1. An example
illustration of the cell constraints and pin constraints required to perform COB are provided in
Figure 6.
W W R
ri ri e
t t a
ed eda d
a ta a
ta ta
D D D
1 2 2
@ @
@
bist
A C
A 2 A a
p
functional
2
Q
1 tu
D
w w
w it it re
it h h
h fu d
fu fu a
n ta
Q_mem
n n
TD
c
bist
c tio c o
ti
ti o n functional
D_mem
o n n b
n a
Bistmode Memory
a l a is
l in l t
Array
in te in in
te rf te te
rf a rf rf ADR_mem
functional
a ce a a
ce c ce
e
ADR

Bist bist
mode
0 0 0 X TADR

L L L C
SHIFT Phase L = Launch
C = Capture
Capture Phase
Figure 5. Sequence of Events in Capture off BIST (COB) based RAM sequential ATPG

// Constraints
set_drc –clock –seq_capture
set_delay –nocommon
add_cell_constraints 0 Bistmode
add_pi_constraints 0 ATPGmode.

// Fault model used

set_fault –model transition

set_atpg –noclk_constraint_fault_pruning
set_atpg –full_seq_atpg

set_atpg –capture 4
--------------------------------------------------------------------
//Capture Procedure for Capture on BIST in SPF file.
"sequential_capture" { W "_default_WFT_";
F { “”;"lcd_pclk"=P;"lcd_vsync"=0; }
V { "_pi"=\j \r196 #; }
V { "DIV10_125"=P; } //Launch: Write D1(A1)
V { "DIV10_125"=P; } //Launch: Write D2(A2)
V { "DIV10_125"=P; } //Launch: Read D2(A2)

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Figure 6. Constraints, switches and sequential capture procedure used in Capture off BIST (COB) based
RAM sequential ATPG

In Figure 6, we can see that a four cycle sequential capture procedure associated with a design
internal clock DIV10_125 (pseudo-primary input) is defined in the spf. In order to detect the
output interface faults of memory, the tool will use 3 Launch cycles and 1 capture cycle in every
pattern generated. The signal Bistmode is controllable using a looped back test register on
scan. Therefore, it is associated with a cell constraint of 0 so that the functional path selected on
the input side. The signal ATPGmode, in this case, is a pseudo-primary input which is
constrained to 0 using add_pi_constraint.

5.2.2 Launch off BI ST (L OB)

In order to gain coverage on output pins of the memory, the ATPG tool can be guided to
generate patterns such that the memory inputs can be controlled through the BIST interface of the
memory, but the data read from the memory can be captured through the BIST interface of the
memory. This technique is therefore called Launch off BIST (LOB) and is shown in Figure 7.

Clearly,r it helps R reduce the overall pattern generation effort from a controllability perspective.
W
W R
r
ite e e C
ite a a a
d d p
d d d d tu
a a a a
bist
ta ta ta ta re
D D D D d
1 a functional Q
D
2 1 2 ta
@ @ @ @
o
A A A A n
1 2 1 2 fu
w Q_mem
TD
w w w n
ith it c bist
functional
it ith h tio
h
b b n D_mem
Bistmode Memory
b b is is
is is a
t t l
Array
t t in in
in in in
te te te te te
rf rf rf ADR_mem
functional
rf a rf a
a a
ce ce ce ace ce
ADR

Bist bist
mode
1 1 1 1 X TADR

L L L L C
SHIFT Phase L = Launch
C = Capture
Capture Phase

Figure 7. Sequence of Events in Launch off BIST (LOB) based RAM sequential ATPG

The fault list used for ATPG is Memory_op_int.flts as described in Section 5.1. An example
illustration of the cell constraints and pin constraints required to perform LOB are provided in
Figure 8. In this case, we can see that a five cycle sequential capture procedure associated with a
design internal clock DIV10_125 (pseudo-primary input) is defined in the spf. In order to detect

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the output interface faults of memory, the tool will use 4 Launch cycles and 1 capture cycle in
every pattern generated. The signal Bistmode is now associated with a cell constraint of 1 so
that the test path is selected on the input slide. The signal ATPGmode is constrained to 0 using
add_pi_constraint. Further, to ensure that coverage credit is provided for capture using functional
flops only, the BIST flops in transitive fanout of memory Q outputs are masked during capture.

// Constraints
set_drc –clock –seq_capture
set_delay –nocommon
add_cell_constraints 1 Bistmode
add_pi_constraints 0 ATPGmode

// Fault model used

set_fault –model transition

set_atpg –noclk_constraint_fault_pruning
set_atpg –full_seq_atpg
set_atpg –capture 5
-----------------------------------------------------------------
//Capture Procedure for Launch on BIST in SPF file.
"sequential_capture" { W "_default_WFT_";
F { “”;"lcd_pclk"=P;"lcd_vsync"=0; }
V { "_pi"=\j \r196 #; }
V { "DIV10_125"=P; }//Launch: Write D1(A1)
V { "DIV10_125"=P; }//Launch: Write D2(A2)
V { "DIV10_125"=P; }//Launch: Read D1(A1)
V { "DIV10_125"=P; }//Launch: Read D2(A2)
V { "DIV10 125"=P; }//Capture

Figure 8. Constraints, switches and sequential capture procedure used in Launch off BIST (LOB) based
RAM sequential ATPG

5.2.3 DF T Careabouts
Design hooks for controlling Bistmode and ATPGmode signals to use the above two methods
more efficiently, are listed below.
Bistmode control: In the COB scheme, only the transition that sensitizes the fault


should be from the functional path, while other initialization and propagation can use the
BIST interface. For example, in the COB scheme, the functional path is mandatory only
for the second capture cycle (i.e write @ A2) that launches a transition at the memory
input. Neither the first capture cycle (that initializes the memory input), nor the third
capture cycle (that observes the transition), nor the last capture cycle need to be along the
functional path as illustrated in Figure.9. Pipelining Bistmode signal to support
functional and BIST modes access to memory dynamically during launch/capture cycles
provides flexibility for the tool in pattern generation. In this way, we can improve the
overall coverage and generation time.

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W
ri
te
W @ Bistmode requires
R W
ri A e ri to be pipelined
te 2 a te
d
@ w @ @ bist
it
A h A A functional
D Q
1w fu 1w 2w
it n
c it it
h ti h h
b o b b
is n is is TD
Q_mem
t a t
bist
l t functional
in in in in D_mem
te te te te Bistmode Memory
rf rf rf rf Array
a a a a
c c c c
e e e e ADR_mem
functional
ADR

Bist bist
mode 1 0 1 X TADR

Bistmode requires to be
toggled atspeed in to
achieve better coverage

L L L C
SHIFT Phase
L = Launch
C = Capture
Capture Phase A1 = some Address location
A2 = another Address location

Figure 9. Pipelining Bistmode control of the memory

 ATPGmode control: During RAM sequential pattern generation, when multi load option
is disabled, the output (Q pins) of the memory is not initialized to a known state at the
end of shift. In LOB, for example, the flops capturing the Q pins of the memory would be
in unknown state for the 4 Launch cycles of the capture phase. This in turn leads to X
propagation, leading to high pattern inflation. This can be taken care in scan insertion by
having ATPGmode pin of each memory to be controlled by scan flops during capture,
such that

ATPGMODE = 1 during shift

1/0 during capture

6 Results
The techniques described in Section 5 (fault segregation and filtering technique, LOB and

COB
45nm based RAM SoC
production sequential
CHIP ATPG as out
A (taped wellinas2011).
the associated DFT changes)
The performance were used
of Synopsys in the
Tetramax
ATPG (tool version : 2011.09) using the conventional and proposed techniques is listed in Table
3.

Table 3. CHIP A: Comparison of proposed and conventional RAM sequential ATPG

RAM Sequential ATPG Coverage #Patterns Run-time
Conventional 25.3% 3028 12087 s

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Proposed 84% 736 1046 s

From Table 3, we can see that the test coverage has improved by 3.5X, while the pattern
generation time has reduced by 75%, while pattern generation time has improved by 10X.

Using timing analysis from PT, we projected the fmax for 4 clock domains by looking at the
worst-case setup slack for the timing paths exercised in conventional TFT as well as RAM
sequential ATPG. The fmax comparisons are shown in Figure 10. The results show that the
RAM sequential is likely to bin the parts at a lower fmax compared to conventional TFT. Silicon
data collection is currently underway to validate the STA data.

600

500
)
z
H
400
(
M LOC TFT
y
c 300
n RAM sequential
e
u
q 200
e
r
F
100

0
1 2 3 4

Clock domains

Figure 10. Projected fmax comparisons between LOC TFT and RAM sequential ATPG patterns

7 Conclusions
In this paper, we saw how Synopsys TetraMAX‟s sequential ATPG engine can be leveraged to
perform effective at-speed testing of the memory interface faults. We provide data on a
production SoC to show the challenges in a naïve approach to use TetraMAX to perform RAM
sequential ATPG. We further show that through a combination of fault list segregation and
pruning, usage of a two-phased ATPG approach to exploit the DFT resources in a design along
with necessary DFT hooks, the performance of TetraMAX can be significantly improved. This
would be a critical enabler to make RAM sequential ATPG patterns part of a production test
program.

8 References
[1] Synopsys, Tetramax User Guide (tool version : 2011.09)
[2] Devanathan, V.R.; Hales, A.; Kale, S.; Sonkar, D.; , "Towards effective and compression-friendly test
of memory interface logic," Test Conference (ITC), 2010 IEEE International , vol., no., pp.1-10, 2-4
Nov. 2010
[3] Devanathan, V.R.; Vooka, S.; , "Techniques to improve memory interface test quality for complex
SoCs," Test Conference (ITC), 2011 IEEE International , vol., no., pp.1-10, 20-22 Sept. 2011

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