Fan5069 1006923
Fan5069 1006923
Fan5069 1006923
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FAN5069 PWM and LDO Controller Combo
September 2006
FAN5069
PWM and LDO Controller Combo
Features Description
■ General Purpose PWM Regulator and LDO Controller The FAN5069 combines a high-efficiency Pulse-Width-
■ Input Voltage Range: 3V to 24V Modulated (PWM) controller and an LDO (Low DropOut)
■ Output Voltage Range: 0.8V to 15V linear regulator controller. Synchronous rectification pro-
– VCC vides high efficiency over a wide range of load currents.
Efficiency is further enhanced by using the low-side
– 5V
MOSFET’s RDS(ON) to sense current.
■ Shunt Regulator for 12V Operation
■ Support for Ceramic Cap on PWM Output Both the linear and PWM regulator soft-start are con-
trolled by a single external capacitor, to limit in-rush cur-
■ Programmable Current Limit for PWM Output
rent from the supply when the regulators are first
■ Programmable Switching Frequency (200KHz to
enabled. Current limit for PWM is also programmable.
600KHz)
■ RDS(ON) Current Sensing The PWM regulator employs a summing-current-mode
■ Internal Synchronous Boot Diode control with external compensation to achieve fast load
transient response and provide design optimization.
■ Soft-Start for both PWM and LDO
■ Multi-Fault Protection with Optional Auto-restart FAN5069 is offered in both industrial temperature grade
■ 16-pin TSSOP Package (-40°C to +85°C) as well as commercial temperature
grade (-10°C to +85°C).
Applications
■ PC/Server Motherboard Peripherals
– VCC_MCH (1.5V), VDDQ (1.5V) and
VTT_GTL (1.25V)
■ Power Supply for
– FPGA, DSP, Embedded Controllers, Graphic Card
Processor, and Communication Processors
■ Industrial Power Supplies
■ High-Power DC-to-DC Converters
Ordering Information
Part Number Operating Temp. Range Pb-Free Package Packing Method Qty./Reel
FAN5069MTCX -10°C to +85°C Yes 16-Lead TSSOP Tape and Reel 2500
FAN5069EMTCX -40°C to +85°C Yes 16-Lead TSSOP Tape and Reel 2500
Pin Description
Pin # Name Description
1 FBLDO LDO Feedback. This node is regulated to VREF.
2 R(T) Oscillator Set Resistor. This pin provides oscillator switching frequency adjustment. By plac-
ing a resistor (RT) from this pin to GND, the nominal 200kHz switching frequency is increased.
3 ILIM Current Limit. A resistor from this pin to GND sets the current limit.
4 SS Soft-Start. A capacitor from this pin to GND programs the slew rate of the converter and the
LDO during initialization. It also sets the time by which the converter delays when restarting
after a fault occurs. SS has to reach 1.2V before fault shutdown feature is enabled. The LDO
is enabled when SS reaches 2.2V.
5 COMP COMP. The output of the error amplifier drives this pin.
6 FB Feedback. This pin is the inverting input of the internal error amplifier. Use this pin, in combi-
nation with the COMP pin, to compensate the feedback loop of the converter.
7 EN Enable. Enables operation when pulled to logic high. Toggling EN resets the regulator after a
latched fault condition. This is a CMOS input whose state is indeterminate if left open and
needs to be properly biased at all times.
8 AGND Analog Ground. The signal ground for IC. All internal control voltages are referred to this pin.
Tie this pin to the ground island/plane through the lowest impedance connection available.
9 SW Switching Node. Return for the high-side MOSFET driver and a current sense input. Connect
to source of high-side MOSFET and drain of low-side MOSFET.
10 HDRV High-Side Gate Drive Output. Connect to the gate of the high-side power MOSFETs. This
pin is also monitored by the adaptive shoot-through protection circuitry to determine when the
high-side MOSFET is turned off.
11 BOOT Bootstrap Supply Input. Provides a boosted voltage to the high-side MOSFET driver.
Connect to bootstrap capacitor as shown in Figure 1.
12 PGND Power Ground. The return for the low-side MOSFET driver. Connect to the source of the low-
side MOSFET.
13 LDRV Low-Side Gate Drive Output. Connect to the gate of the low-side power MOSFETs. This pin
is also monitored by the adaptive shoot-through protection circuitry to determine when the
lower MOSFET is turned off.
14 R(RAMP) Ramp Resistor. A resistor from this pin to VIN sets the ramp amplitude and provides voltage
feed-forward.
15 VCC VCC. Provides bias power to the IC and the drive voltage for LDRV. Bypass with a ceramic
capacitor as close to this pin as possible. This pin has a shunt regulator which draws current
when the input voltage is above 5.6V.
16 GLDO Gate Drive for the LDO. Turned off (low) until SS is greater than 2.2V.
Notes:
1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at these or any conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Absolute maximum ratings apply individually only, not in
combination. Unless otherwise specified, all other voltages are referenced to AGND.
2. Using Mil Std. 883E, method 3015.7(Human Body Model) and EIA/JESD22C101-A (Charge Device Model).
Thermal Information
Symbol Parameter Min. Typ. Max. Unit
TSTG Storage Temperature -65 150 °C
TL Lead Soldering Temperature, 10 Seconds 300 °C
Vapor Phase, 60 Seconds 215 °C
Infrared, 15 Seconds 220 °C
PD Power Dissipation, TA = 25°C 715 mW
θJC Thermal Resistance, Junction-to-Case 37 °C/W
θJA Thermal Resistance, Junction-to-Ambient (3)
100 °C/W
Notes:
3. Junction-to-ambient thermal resistance, θJA, is a strong function of PCB material, board thickness, thickness and
number of copper planes, number of vias used, diameter of vias used, available copper surface, and attached heat
sink characteristics.
Notes:
4. All limits at operating temperature extremes are guaranteed by design, characterization, and statistical quality
control.
5. AC specifications guaranteed by design/characterization (not production tested).
6. For a case when VCC is higher than the typical 5V VCC; voltage observed at VCC pin when the internal shunt
regulator is sinking current to keep voltage on VCC pin constant.
7. Test Conditions: VLDO_IN = 1.5V and VLDO_OUT = 1.2V
Figure 4. PWM Load Transient (0 to 5A) Figure 7. LDO Load Transient (0 to 2A)
Figure 5. PWM Load Transient (0 to 10A) Figure 8. LDO Load Transient (0 to 5A)
Figure 10. PWM/LDO Power Down Figure 13. Enable OFF (IPWM = 5A)
PWM Line Regulation (VOUT = 1.5V) LDO Load Regulation (VOUT = 1.203V)
1.210
1.54
IL = 0A
IL = 5A
OUTPUT VOLTAGE (V)
1.50 1.200
1.48 VIN = 8V
1.195
VIN = 12V
VIN = 15V
1.46 VIN = 20V
1.190
6 8 10 12 14 16 18 20 0 1 2 3 4 5
INPUT VOLTAGE (V) LOAD CURRENT (A)
Figure 14. PWM Line Regulation Figure 17. LDO Load Regulation
1.205
FREQUENCY (kHz)
500
1.200 400
300
1.195
200
1.190 100
8 10 12 14 16 18 20 0 100 200 300 400
INPUT VOLTAGE (V) RT (kΩ)
VIN = 12V
60 VIN = 15V
VIN = 20V
1.500
40
1.495
20
1.490 0
0 2 4 6 8 10 0 2 4 6 8 10
LOAD CURRENT (A) LOAD CURRENT (A)
Figure 16. PWM Load Regulation Figure 19. 1.5V PWM Efficiency
COMP PW M
Error PWM
Amplifier R Q
Comparator
FB
HDRV
S Adaptive
Vref Gate Drive
Vcc Circuit LO Vout
10μA OSC SW CO
SS
Current
Sense LDRV
VIN Summing Amplifier
RRAMP
Ramp
Generator
Σ
R(RAMP) Amplifier PGND
Enable
EN
VIN
Current
Sense
Amplifier Q1
VIN
RRAMP
Ramp
Generator L
PWM RDC VOUT
Summing
&
Σ DRIVER C
RL
Amplifier Q2
RES
C2
C1 R2
C3 R3
RBIAS
R1
Reference
T s = Switching Period
V IN = Input Voltage
F SW = Switching Frequency
Equations:
Effective current sense resistance = R i = 7 × R DSON (EQ. 19)
RL
Current modulator DC gain = M i = ------- (EQ. 20)
Ri
( V IN – 1.8 ) × T s
Effective ramp amplitude = V m = 3.33 × 10 10 × ----------------------------------------
-
R ramp
(EQ. 21)
V IN
Voltage modulator DC gain = M v = --------- (EQ. 22)
Vm
Mv × Mi
Plant DC gain = M o = M v || M i = -------------------- (EQ. 23)
Mv + Mi
π
Sampling gain natural frequency = ω n = ------ (EQ. 24)
Ts
–2
Sampling gain quality factor (damping) = Q z = ------ (EQ. 25)
π
MO Mv × Ri
Effective inductance = L e = -------- × ⎛ L + --------------------⎞ (EQ. 26)
Mv ⎝ ω n × Q z⎠
Mv × Ri × RL
R p = --------------------------------- = ( M v × R i ) || R L (EQ. 27)
Mv × Ri + RL
1
Plant 1st pole frequency = f p1 = ----------------------------------------------------------- (EQ. 29)
Le
2 × π × ⎛⎝ C o × R p + -------⎞⎠
RL
Rp
Plant 2nd pole frequency = f p2 = ------------ × ⎛ -------------------- + -------⎞
1 1
(EQ. 30)
2×π ⎝ Co × RL Le ⎠
2
ωn × Le
Plant 3rd pole frequency = f p3 = -------------------------- (EQ. 31)
2 × π × Rp
Choose R1, RBIAS to set the output voltage using EQ.6. Choose the zero crossover frequency Fcross of the overall
loop. Typically Fcross should be less than fifth of Fsw. Choose the desired phase margin; typically between 60° to 90°.
Calculate plant gain at Fcross using EQ.34 by substituting Fcross in place of f. The gain that the amplifier needs to pro-
vide to get the required crossover is given by:
1
G AMP = -------------------------------- (EQ. 34)
G p (F cross )
1
C2 = ------------------------------------------------------------------------
2 × π × F cross × G AMP × R1
(EQ. 37)
C1 = C2 × ( K – 1 ) (EQ. 38)
1
C3 = ---------------------------------------------------------------- (EQ. 39)
2 × π × F cross × K × R3
K
R2 = -------------------------------------------------- (EQ. 40)
2 × π × F cross × C1
R1
R3 = ------------------ (EQ. 41)
(K – 1)
R9
220
U1
PWM OUT C7
3-24V
0.22µF
J2
15 14 R6 453K
VCC R(RAMP) VIN
C6 C10 + C11 +
FDD6296
Q1
FDD6530A Q2 0.1µF 820µF 820µF J3
LDO 16 10
GLDO HDRV GND
J7 R8
LDO_Out 1 11 PWM OUT
FBLDO BOOT
C17 5K
+ C8
C4
R7 10K 0.22µF
0.1µF L1 1.8µH J4
R4 2 9
J6 560µF R(T) SW SW_Out
GND 50K FDD6606 FDD6606
R11 C12 C13 C14
2.2 + + + C15
Q3 Q4
R5 3 13
IL IM LDRV
560µF 560µF 560µF 0.1µF
243K
TP1 C16
C5 3.3nF
J5
4 12
SS PGND GND
0.1µF C1
1500pF C3
TP2 7 5 R2 R3
EN COMP
12.7k
825
3300pF
C9 0.01µF C2
220pF R1
8 6
AGND FB
5.11K
FAN5069 R10
5.83K
Bill of Materials
Part Description Quantity Designator Vendor Vendor Part #
Capacitor, 1500pF, 20%, 25V, 0603,X7R 1 C1 Panasonic PCC1774CT-ND
Capacitor, 220pF, 5%, 50V, 0603,NPO 1 C2 Panasonic PCC221ACVCT-ND
Capacitor, 3300pF, 10%, 50V, 0603,X7R 1 C3 Panasonic PCC1778CT-ND
Capacitor, 0.1µF, 10%, 25V, 0603,X7R 4 C4, C5, C6, C15 Panasonic PCC2277CT-ND
Capacitor, 0.22µF, 20%, 25V, 0603,X7R 2 C7, C8 Panasonic PCC1767CT-ND
Capacitor, 0.01µF, 10%, 50V, 0603,X7R 1 C9 Panasonic PCC1784CT-ND
Capacitor, 820µF, 20%, 10X20, 25V,20mOhm,1.96A 2 C10, C11 Nippon-Chemicon KZH25VB820MHJ20
Capacitor, 820µF, 20%, 8X8, 2.5V,7mOhm,6.1A 1 C17 Nippon-Chemicon PSC2.5VB820MH08
Capacitor, 560µF, 20%, 8X11.5, 4V,7mOhm,5.58A 3 C12, C13, C14 Nippon-Chemicon PSA4VB560MH11
Capacitor, 3300pF, 10%, 50V, 0603,X7R 1 C16 Panasonic PCC332BNCT-ND
Connector Header 0.100 Vertical, Tin - 2 Pin 1 J1 Molex WM6436-ND
Terminal Quickfit Male .052"Dia.187" Tab 6 J2 - J7 Keystone 1212K-ND
Inductor, 1.8µH, 20%, 26Amps Max, 3.24mOhm 1 L1 Inter-Technical SC5018-1R8M
MOSFET N-CH, 32 mΩ, 20V, 21A, D-PAK, FSID: FDD6530A 1 Q1 Fairchild Semiconductor FDD6530A
MOSFET N-CH, 8.8 mΩ, 30V, 50A, D-PAK, FSID: FDD6296 1 Q2 Fairchild Semiconductor FDD6296
MOSFET N-CH, 6 mΩ, 30V, 75A, D-PAK, FSID: FDD6606 2 Q3, Q4 Fairchild Semiconductor FDD6606
Resistor, 5.11K, 1%, 1/16W 1 R1 Panasonic P5.11KHCT-ND
Resistor, 12.7K, 1%, 1/16W 1 R2 Panasonic P12.7KHCT-ND
Resistor, 825Ω, 1%, 1/16W 1 R3 Panasonic P825HCT-ND
Resistor, 49.9K, 1%, 1/16W 1 R4 Panasonic P49.9KHCT-ND
Resistor, 243K, 1%, 1/16W 1 R5 Panasonic P243KHCT-ND
Resistor,453K, 1%, 1/16W 1 R6 Panasonic P453KHCT-ND
Resistor,10K, 1%, 1/16W 1 R7 Panasonic P10.0KHCT-ND
Resistor, 4.99K, 1%, 1/16W 1 R8 Panasonic P4.99KHCT-ND
Resistor, 220Ω, 1%, 1/4W 1 R9 Panasonic P200FCT-ND
Resistor, 5.90K, 1%, 1/16W 1 R10 Panasonic P5.90KHCT-ND
Resistor, 2.2Ω, 1%, 1/4W 1 R11 Panasonic P2.2ECT-ND
Connector Header 0.100 Vertical, Tin - 1 Pin 3 TP1,TP2, Vcc Molex WM6436-ND
IC, System Regulator, TSSOP16, FSID: FAN5069 1 U1 Fairchild Semiconductor FAIRCHILD
3.2 0.65
1.45
1 PIN #1 8 0.2 C B A
0.11 IDENT ALL LEAD TIPS 5.00
TOP VIEW
LAND PATTERN RECOMMENDATION
1.10 MAX 0.15 A
0.05 0.20
0.09
0.90 ALL LEAD TIPS
0.1 C
0.30
C 0.19 SIDE VIEW
0.65 0.13 M A BS CS
NOTES:
FRONT VIEW
12° A. CONFORMS TO JEDEC REGISTRATION
MO-153, VARIATION AB
TOP & BOTTOM B. ALL DIMENSIONS ARE IN MILLIMETERS
GAGE C. DIMENSIONS ARE EXCLUSIVE OF
PLANE BURRS, MOLD FLASH, AND TIE BAR
0.25 EXTRUSIONS
8° D. DIMENSIONS AND TOLERANCES
0° PER ASME Y14.5M, 2009
E. LAND PATTERN RECOMMENDATION
PER IPC7351 - ID# TSOP65P640X110-16N
0.70 F. DRAWING FILENAME: MKT-MTC16rev5
0.50 SEATING PLANE
DETAIL A
SCALE 3:1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
Authorized Distributor
Fairchild Semiconductor:
FAN5069EMTCX FAN5069MTCX