R6046ANZ1

Nch 600V 46A Power MOSFET Datasheet

lOutline
VDSS 600V TO-247
RDS(on) (Max.) 0.09W
ID 46A
PD 120W (1) (2)
(3)

lFeatures lInner circuit

1) Low on-resistance.

e
2) Fast switching speed. (1) Gate
(2) Drain
3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source

4) Drive circuits can be simple.

et
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant lPackaging specifications
Packaging Tube
Reel size (mm) -
ol
lApplication Tape width (mm) -
Type
Switching Power Supply Basic ordering unit (pcs) 450
Taping code C9
Marking R6046ANZ1

lAbsolute maximum ratings(Ta = 25°C)

bs

Parameter Symbol Value Unit

Drain - Source voltage VDSS 600 V
Tc = 25°C ID *1 46 A
Continuous drain current
Tc = 100°C ID *1 22.3 A
*2
Pulsed drain current ID,pulse 115 A
O

Gate - Source voltage VGSS 30 V

Avalanche energy, single pulse EAS *3 142 mJ
Avalanche energy, repetitive EAR *4 5.4 mJ
Avalanche current IAR *3 23 A
Power dissipation (Tc = 25°C) PD 120 W
Junction temperature Tj 150 °C
Range of storage temperature Tstg -55 to +150 °C
Reverse diode dv/dt dv/dt *5 15 V/ns

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R6046ANZ1 Data Sheet

lAbsolute maximum ratings

Parameter Symbol Conditions Values Unit
VDS = 480V, ID = 46A
Drain - Source voltage slope dv/dt 50 V/ns
Tj = 125°C

lThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.

e
Thermal resistance, junction - case RthJC - - 1.04 °C/W

Thermal resistance, junction - ambient RthJA - - 30 °C/W

et
Soldering temperature, wavesoldering for 10s Tsold - - 265 °C

lElectrical characteristics(Ta = 25°C)

Values
Parameter Symbol Conditions Unit
ol
Min. Typ. Max.

Drain - Source breakdown

V(BR)DSS VGS = 0V, ID = 1mA 600 - - V
voltage

Drain - Source avalanche

V(BR)DS VGS = 0V, ID = 23A - 700 - V
bs

breakdown voltage

VDS = 600V, VGS = 0V

Zero gate voltage
IDSS Tj = 25°C - 0.1 100 mA
drain current
Tj = 125°C - - 1000

Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA

Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 2.5 - 4.5 V
O

VGS = 10V, ID = 23A

Static drain - source
RDS(on) *6 Tj = 25°C - 0.069 0.09 W
on - state resistance
Tj = 125°C - 0.145 -

Gate input resistance RG f = 1MHz, open drain - 2.2 - W

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R6046ANZ1 Data Sheet

lElectrical characteristics(Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Transconductance gfs *6 VDS = 10V, ID = 23A 19 33 - S

Input capacitance Ciss VGS = 0V - 6000 -

Output capacitance Coss VDS = 25V - 3900 - pF

Reverse transfer capacitance Crss f = 1MHz - 83 -

e
Effective output capacitance,
Co(er) - 188 -
energy related
VGS = 0V
pF
VDS = 0V to 480V
Effective output capacitance,
Co(tr) - 640 -
time related

et
Turn - on delay time td(on) *6 VDD ⋍ 300V, VGS = 10V - 65 -

Rise time tr *6 ID = 23A - 120 -

ns
Turn - off delay time td(off) *6 RL = 13W - 260 520

Fall time tf *6 RG = 10W - 100 200

ol
lGate Charge characteristics(Ta = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
bs

Total gate charge Qg *6 VDD ⋍ 300V - 150 -

Gate - Source charge Qgs *6 ID = 46A - 35 - nC

Gate - Drain charge Qgd *6 VGS = 10V - 56 -

Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 46A - 5.9 - V

O

*1 Limited only by maximum temperature allowed.

*2 PW  10ms, Duty cycle  1%

*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C

*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz

*5 Reference measurement circuits Fig.5-1.

*6 Pulsed

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R6046ANZ1 Data Sheet

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Inverse diode continuous,

IS *1 - - 46 A
forward current
Tc = 25°C
Inverse diode direct current,
ISM *2 - - 115 A
pulsed

Forward voltage VSD *6 VGS = 0V, IS = 46A - - 1.5 V

e
Reverse recovery time trr *6 - 692 - ns
IS = 46A
Reverse recovery charge Qrr *6 - 15 - mC
di/dt = 100A/ms
Irrm *6

et
Peak reverse recovery current - 45 - A

Peak rate of fall of reverse

dirr/dt Tj = 25°C - 940 - A/ms
recovery current
ol
lTypical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
Rth1 0.055 Cth1 0.0236
Rth2 0.164 K/W Cth2 0.134 Ws/K
bs

Rth3 0.821 Cth3 1.09

O

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R6046ANZ1 Data Sheet

lElectrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

120 1000
PW = 100ms
Power Dissipation : PD/PD max. [%]

100
100 PW = 1ms

Drain Current : ID [A]

80
10

e
60
1 Operation in this area
40 is limited by RDS(on)
(VGS = 10V) PW = 10ms

0.1

et
20
Ta=25ºC
Single Pulse
0 0.01
0 50 100 150 200 0.1 1 10 100 1000

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

ol
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r(t)

1000
Ta = 25ºC
100 Single Pulse
bs

Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 30ºC/W
10

0.1

top D = 1
0.01 D = 0.5
D = 0.1
O

0.001 D = 0.05
D = 0.01
D = Single
0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width : PW [s]

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R6046ANZ1 Data Sheet

lElectrical characteristic curves

Fig.4 Avalanche Current vs Inductive Load Fig.5 Avalanche Power Losses

12 5000

4500 Ta=25ºC

Avalanche Power Losses : PAR [W]

10
4000
Avalanche Current : IAR [A]

3500
8
3000

e
6 2500

2000
4
1500
Ta = 25ºC 1000

et
2 VDD = 50V, RG = 25W
VGF = 10V, VGR = 0V 500
0 0
0.01 0.1 1 10 100 1.0E+04 1.0E+05 1.0E+06

Coil Inductance : L [mH] Frequency : f [Hz]

ol
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
120
Avalanche Energy : EAS / EAS max. [%]

bs

100

80

60

40
O

20

0
0 25 50 75 100 125 150 175

Junction Temperature : Tj [ºC]

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R6046ANZ1 Data Sheet

lElectrical characteristic curves

Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)

45 30
VGS= 6.0V
Ta=25ºC VGS= 10.0V Ta=25ºC
40 VGS= 10.0V Pulsed
25 VGS= 8.0V Pulsed
VGS= 8.0V
35 VGS= 6.5V
VGS= 6.5V VGS= 6.0V

Drain Current : ID [A]

Drain Current : ID [A]

30 20

25

e
15
20 VGS= 5.0V

15 10
VGS= 5.0V

10

et
5
5 VGS= 4.5V
VGS= 4.5V
0 0
0 10 20 30 40 50 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
ol
Fig.9 Tj = 150°C Typical Output Fig.10 Tj = 150°C Typical Output
Characteristics(I) Characteristics(II)
30
45 VGS= 10.0V
VGS= 10.0V VGS= 6.0V Ta=150ºC
VGS= 8.0V
40 VGS= 8.0V Pulsed
VGS= 7.0V
bs

Ta=150ºC 25
VGS= 7.0V VGS= 6.5V
35 VGS= 6.5V Pulsed VGS= 6.0V
Drain Current : ID [A]
Drain Current : ID [A]

20 VGS= 5.5V
30 VGS= 5.5V

25 VGS= 5.0V
15
20
VGS= 5.0V
15 10
VGS= 4.5V
10
O

VGS= 4.5V 5
5

0 0
0 10 20 30 40 50 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

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R6046ANZ1 Data Sheet

lElectrical characteristic curves

Fig.11 Breakdown Voltage Fig.12 Typical Transfer Characteristics

vs. Junction Temperature
Drain - Source Breakdown Voltage : V(BR)DSS [V]

900 100
VDS= 10V
850 Plused
10
800

Drain Current : ID [A]

750 1

e
700
0.1
650 Ta=125ºC
Ta=75ºC
600 Ta=25ºC
0.01

et
Ta= -25ºC
550

500 0.001
-50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V]

ol
Fig.13 Gate Threshold Voltage Fig.14 Transconductance vs. Drain Current
vs. Junction Temperature
5 100
VDS= 10V VDS= 10V
Gate Threshold Voltage : VGS(th) [V]

ID= 1mA Plused

bs

4 Plused
Transconductance : gfs [S]

10

1
2 Ta= -25ºC
Ta=25ºC
Ta=75ºC
0.1 Ta=125ºC
1
O

0 0.01
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100

Junction Temperature : Tj [°C] Drain Current : ID [A]

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R6046ANZ1 Data Sheet

lElectrical characteristic curves

Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Gate Source Voltage Resistance vs. Junction Temperature
200 0.2
Static Drain - Source On-State Resistance

Static Drain - Source On-State Resistance

Ta=25ºC VGS= 10V
Pulsed Plused

150 0.15
: RDS(on) [mW]

ID = 46A

: RDS(on) [W]

e
100 0.1 ID = 46A
ID = 23A

ID = 23A
50 0.05

0
0 2 4 6

et8 10 12 14 16 18 20

Gate - Source Voltage : VGS [V]

0
-50 -25 0 25 50 75 100 125 150

Junction Temperature : Tj [ºC]

ol
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
1
Static Drain - Source On-State Resistance

VGS= 10V
Plused
bs

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
: RDS(on) [W]

0.1
O

0.01
0.1 1 10 100

Drain Current : ID [A]

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R6046ANZ1 Data Sheet

lElectrical characteristic curves

Fig.18 Typical Capacitance Fig.19 Coss Stored Energy

vs. Drain - Source Voltage
100000 45

40 Ta=25ºC

Coss Stored Energy : EOSS [uJ]

10000 Ciss
35
Capacitance : C [pF]

30
1000
25

e
Coss
20
100
15

10 10

et
Ta=25ºC
f = 1MHz Crss
5
VGS = 0V
1 0
0.01 0.1 1 10 100 1000 0 200 400 600

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
ol
Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics

100000 10
VDD ≒ 300V
VGS = 10V
bs
Gate - Source Voltage : VGS [V]

10000 RG= 10W 8

Ta = 25ºC
Switching Time : t [ns]

Pulsed
td(off)
1000 tf 6

td(on)
100 4

Ta = 25ºC
10 tr 2 VDD= 300V
O

ID= 46A
Pulsed
1 0
0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 160 180 200

Drain Current : ID [A] Total Gate Charge : Qg [nC]

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R6046ANZ1 Data Sheet

lElectrical characteristic curves

Fig.22 Inverse Diode Forward Current Fig.23 Reverse Recovery Time

vs. Source - Drain Voltage vs.Inverse Diode Forward Current
100 10000
VGS=0V
Inverse Diode Forward Current : IS [A]

Pulsed

Reverse Recovery Time : trr [ns]

10 1000

e
1 100
Ta=125ºC
Ta=75ºC
Ta=25ºC
0.1 Ta= -25ºC 10 Ta=25ºC

et
VGS = 0V
di / dt = 100A / ms
Pulsed
0.01 1
0.0 0.5 1.0 1.5 0 1 10 100

Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]
ol
bs
O

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R6046ANZ1 Data Sheet

lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

e
et
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
ol
bs

Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform

O

Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform

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R6046ANZ1 Data Sheet

lDimensions (Unit : mm)

TO-247

e
et
ol
bs

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
A 4.83 5.21 0.190 0.205
A1 2.29 2.54 0.090 0.100
A2 1.91 2.16 0.075 0.085
b 1.14 1.40 0.045 0.055
b1 1.91 2.20 0.075 0.087
b2 2.92 3.20 0.115 0.126
c 0.61 0.80 0.024 0.031
O

D 20.80 21.34 0.819 0.840

D1 17.43 17.83 0.686 0.702
E 15.75 16.13 0.620 0.635
e 5.45 0.215
N 3.00 3.000
L 19.81 20.57 0.780 0.810
L1 3.81 4.32 0.150 0.170
ΦP 3.55 3.65 0.140 0.144
Q 5.59 6.20 0.220 0.244
S 6.15 0.240
Dimension in mm / inches

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JAPAN USA EU CHINA
CLASSⅢ CLASSⅡb
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For details, please refer to ROHM Mounting specification

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Precautions Regarding Application Examples and External Circuits
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 Datasheet

General Precaution
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concerning such information.

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