RQ3E120AT

Pch -30V -39A Power MOSFET Datasheet

l Outline
VDSS -30V
RDS(on)(Max.) 8.0mΩ
ID ±39A HSMT8

PD 20W

l Inner circuit
l Features
1) Low on - resistance.
2) High Power small mold Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.

l Packaging specifications
Packing Embossed
Tape
Reel size (mm) 330
l Application Type Tape width (mm) 12
Switching Basic ordering unit (pcs) 3000
Taping code TB
Marking E120AT
l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage VDSS -30 V
Tc = 25°C ID*1 ±39 A
Continuous drain current
Ta = 25°C ID ±12 A
Pulsed drain current IDP*2 ±48 A
Gate - Source voltage VGSS ±20 V
Avalanche current, single pulse IAS*3 -12 A
Avalanche energy, single pulse EAS*3 10.7 mJ
PD*1 20 W
Power dissipation
PD*4 2 W
Junction temperature Tj 150 ℃
Operating junction and storage temperature range Tstg -55 to +150 ℃

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© 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC*1 - - 6.2 ℃/W
Thermal resistance, junction - ambient RthJA*4 - - 62.5 ℃/W

l Electrical characteristics (T a = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown V(BR)DSS VGS = 0V, ID = -1mA -30 - - V
voltage

Breakdown voltage ΔV(BR)DSS ID = -1mA

temperature coefficient - -22 - mV/℃
ΔTj referenced to 25℃
Zero gate voltage IDSS VDS = -30V, VGS = 0V - - -1 μA
drain current
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±100 nA
Gate threshold voltage VGS(th) VDS = VGS , ID = -1mA -1.0 - -2.5 V
Gate threshold voltage ΔVGS(th) ID = -1mA
temperature coefficient - 2.9 - mV/℃
ΔTj referenced to 25℃
Static drain - source VGS = -10V, ID = -12A - 6.1 8.0
RDS(on)*5 mΩ
on - state resistance VGS = -4.5V, ID = -12A - 8.7 11.3
Gate resistance RG f=1MHz, open drain - 3.9 - Ω
Forward Transfer |Yfs| *5 VDS = -5V, ID = -12A 15 - - S
Admittance

*1 Tc = 25℃, Limited only by maximum temperature allowed.

*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 L ⋍ 0.1mH, V DD = -15V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed

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© 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Electrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 3200 -
Output capacitance Coss VDS = -15V - 550 - pF
Reverse transfer capacitance Crss f = 1MHz - 410 -
Turn - on delay time td(on)*5 VDD ⋍ -15V,VGS = -10V - 20 -
Rise time tr*5 ID = -6A - 30 -
ns
Turn - off delay time td(off)*5 RL ⋍ 2.5Ω - 140 -
Fall time tf*5 RG = 10Ω - 95 -

l Gate charge characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = -10V - 62 -
Total gate charge Qg*5
VDD ⋍ -15V - 33 -
nC
Gate - Source charge Qgs*5 ID = -12A VGS = -4.5V - 9 -
Gate - Drain charge Qgd*5 - 12 -

l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Continuous forward current IS - - -1.67 A
Ta = 25℃
Pulse forward current ISP*2 - - -48 A
Forward voltage VSD*5 VGS = 0V, IS = -1.67A - - -1.2 V

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© 2016 ROHM Co., Ltd. All rights reserved. 3/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power

Resistance vs. Pulse Width dissipation

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© 2016 ROHM Co., Ltd. All rights reserved. 4/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Electrical characteristic curves

Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)

Fig.7 Breakdown Voltage vs. Junction Fig.8 Typical Transfer Characteristics

Temperature

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© 2016 ROHM Co., Ltd. All rights reserved. 5/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Electrical characteristic curves

Fig.9 Gate Threshold Voltage vs. Junction Fig.10 Forward Transfer Admittance vs.
Temperature Drain Current

Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

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© 2016 ROHM Co., Ltd. All rights reserved. 6/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Electrical characteristic curves

Fig.13 Static Drain - Source On - State Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature Resistance vs. Drain Current(I)

Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(II) Resistance vs. Drain Current(III)

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© 2016 ROHM Co., Ltd. All rights reserved. 7/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Electrical characteristic curves

Fig.17 Typical Capacitance vs. Drain - Fig.18 Switching Characteristics

Source Voltage

Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain
Voltage

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© 2016 ROHM Co., Ltd. All rights reserved. 8/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Measurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

l Notice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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© 2016 ROHM Co., Ltd. All rights reserved. 9/10 20160923 - Rev.002
RQ3E120AT Datasheet

l Dimensions

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© 2016 ROHM Co., Ltd. All rights reserved. 10/10 20160923 - Rev.002
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[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

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Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification

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[b] the temperature or humidity exceeds those recommended by ROHM
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[d] the Products are exposed to high Electrostatic

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