RD3G01BAT

Pch -40V -15A Power MOSFET Datasheet

l Outline
VDSS -40V
RDS(on)(Max.) 39mΩ DPAK

ID ±15A TO-252

PD 25W

l Inner circuit
l Features
1) Low on - resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free plating ; RoHS compliant

l Packaging specifications
Packing Embossed
Tape
Reel size (mm) 330
l Application Type Tape width (mm) 16
Switching Quantity (pcs) 2500
Taping code TL1
Marking RD3G01BAT
l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage VDSS -40 V
Continuous drain current ID*1 ±15 A
Pulsed drain current IDP*2 ±30 A
Gate - Source voltage VGSS ±20 V
Avalanche current, single pulse IAS*3 -15 A
Avalanche energy, single pulse EAS*3 18 mJ
Power dissipation PD*1 25 W
Junction temperature Tj 150 ℃
Operating junction and storage temperature range Tstg -55 to +150 ℃

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RD3G01BAT Datasheet

l Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC*1 - - 4.9 ℃/W

l Electrical characteristics (T a = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown V(BR)DSS VGS = 0V, ID = -1mA -40 - - V
voltage

Breakdown voltage ΔV(BR)DSS ID = -1mA

temperature coefficient - -22 - mV/℃
ΔTj referenced to 25℃
Zero gate voltage IDSS VDS = -40V, VGS = 0V
drain current - - -1 μA

Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±100 nA

Gate threshold voltage VGS(th) VDS = VGS, ID = -1mA -1.0 - -2.5 V
Gate threshold voltage ΔVGS(th) ID = -1mA
temperature coefficient - 3.7 - mV/℃
ΔTj referenced to 25℃
Static drain - source VGS = -10V, ID = -15A - 31 39
RDS(on)*4 mΩ
on - state resistance VGS = -4.5V, ID = -7.5A - 38 49
Gate resistance RG f = 1MHz, open drain - 12 - Ω
Forward Transfer |Yfs| *4 VDS = -5V, ID = -7.5A 7.5 - - S
Admittance

*1 Tc=25℃, Limited only by maximum temperature allowed.

*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 0.1mH, V DD = -20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2
*4 Pulsed

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RD3G01BAT Datasheet

l Electrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 1030 -
Output capacitance Coss VDS = -20V - 105 - pF
Reverse transfer capacitance Crss f = 1MHz - 80 -
Turn - on delay time td(on)*4 VDD ⋍ -20V,VGS = -10V - 9.2 -
Rise time tr*4 ID = -7.5A - 38 -
ns
Turn - off delay time td(off)*4 RL ⋍ 2.6Ω - 67 -
Fall time tf*4 RG = 10Ω - 34 -

l Gate charge characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
V GS = -10V - 19.3 -
Total gate charge Qg*4
VDD ⋍ -20V - 9.5 -
nC
Gate - Source charge Qgs*4 ID = -15A V GS = -4.5V - 3.0 -
Gate - Drain charge Qgd*4 - 3.8 -

l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Continuous forward current IS*1 - - -15 A
Ta = 25℃
Pulse forward current ISP*2 - - -30 A
Forward voltage VSD*4 VGS = 0V, IS = -15A - - -1.2 V
Reverse recovery time trr*4 IS = -15A, VGS=0V - 26 - ns
Reverse recovery charge Qrr*4 di/dt = 100A/μs - 24 - nC

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RD3G01BAT Datasheet

l Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power

Resistance vs. Pulse Width Dissipation

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RD3G01BAT Datasheet

l Electrical characteristic curves

Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)

Fig.7 Breakdown Voltage vs.

Junction Temperature

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RD3G01BAT Datasheet

l Electrical characteristic curves

Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs.

Junction Temperature

Fig.10 Forward Transfer Admittance vs.

Drain Current

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RD3G01BAT Datasheet

l Electrical characteristic curves

Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

Fig.13 Static Drain - Source On - State

Resistance vs. Junction Temperature

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RD3G01BAT Datasheet

l Electrical characteristic curves

Fig.14 Static Drain - Source On - State Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I) Resistance vs. Drain Current(II)

Fig.16 Static Drain - Source On - State

Resistance vs. Drain Current(III)

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RD3G01BAT Datasheet

l Electrical characteristic curves

Fig.17 Typical Capacitances vs. Fig.18 Switching Characteristics

Drain - Source Voltage

Fig.19 Typical Gate Charge Fig.20 Source Current vs.

Source Drain Voltage

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RD3G01BAT Datasheet

l Measurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

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RD3G01BAT Datasheet

l Dimensions

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 Datasheet

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