SH8KA2

30V Nch+Nch Middle Power MOSFET Datasheet

l Outline
VDSS 30V
RDS(on)(Max.) 28mΩ
ID ±8.0A SOP8

PD 2.8W

l Features l Inner circuit

1) Low on - resistance.
2) Small Surface Mount Package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.

l Packaging specifications
Packing Embossed
Tape
l Application Reel size (mm) 330
Switching Type Tape width (mm) 12
Motor Drive Basic ordering unit (pcs) 2500
Taping code TB
Marking SH8KA2
l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter Symbol Value Unit
Drain - Source voltage VDSS 30 V
Continuous drain current ID*1 ±8.0 A
Pulsed drain current IDP*2 ±16 A
Gate - Source voltage VGSS ±20 V
Avalanche current, single pulse IAS*3 6.0 A
Avalanche energy, single pulse EAS*3 2.6 mJ
PD*1 2.8
Power dissipation (total) PD*4 2.0 W
PD*5 1.4
Junction temperature Tj 150 ℃
Operating junction and storage temperature range Tstg -55 to +150 ℃

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SH8KA2 Datasheet

l Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
RthJA*4 - - 62.5
Thermal resistance, junction - ambient (total) ℃/W
RthJA*5 - - 89.2

l Electrical characteristics (T a = 25°C) <Tr1 and Tr2>

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Drain - Source breakdown V(BR)DSS VGS = 0V, ID = 1mA 30 - - V

voltage
ΔV(BR)DSS ID = 1mA
Breakdown voltage - 21 - mV/℃
temperature coefficient ΔTj referenced to 25℃
Zero gate voltage IDSS VDS = 30V, VGS = 0V
drain current - - 1 μA

Gate - Source IGSS VDS = 0V, VGS = ±20V - - ±100 nA

leakage current
Gate threshold VGS(th) VDS = VGS, ID = 1mA
voltage 1.0 - 2.5 V

Gate threshold voltage ΔVGS(th) ID = 1mA

- -3 - mV/℃
temperature coefficient ΔTj referenced to 25℃

Static drain - source VGS = 10V, ID = 8A - 23 28

RDS(on)*6 mΩ
on - state resistance VGS = 4.5V, ID = 6A - 34 43
Gate resistance RG f = 1MHz, open drain - 2.5 - Ω

Forward Transfer |Yfs| *6 VDS = 5V, ID = 6A 4.2 - - S

Admittance

*1 Pw ≦ 1s, Mounted on a ceramic board (30×30×0.8mm), Limited only by maximum temperature allowed.
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 L ⋍ 0.1mH, V DD = 15V, RG = 25Ω, STARTING Tj = 25℃ Fig.3-1,3-2
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a Cu board (25×25×0.8mm)
*6 Pulsed

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SH8KA2 Datasheet

l Electrical characteristics (Ta = 25°C) <Tr1 and Tr2>

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 330 -
Output capacitance Coss VDS = 15V - 55 - pF
Reverse transfer capacitance Crss f = 1MHz - 44 -
Turn - on delay time td(on)*6 VDD ⋍ 15V,VGS = 10V - 7.4 -
Rise time tr*6 ID = 4A - 8.4 -
ns
Turn - off delay time td(off)*6 RL = 3.8Ω - 11 -
Fall time tf*6 RG = 10Ω - 5.7 -

l Gate charge characteristics (Ta = 25°C) <Tr1 and Tr2>

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 10V - 8.0 -
Total gate charge Qg*6
VDD ⋍ 15V - 4.1 -
ID = 8A
nC
Gate - Source charge Qgs*6 VGS = 4.5V - 1.6 -
Gate - Drain charge Qgd*6 - 1.5 -

l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

<Tr1 and Tr2>
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Continuous forward current IS - - 1.67
Ta = 25℃ A
Pulse forward current ISP*2 - - 16
Forward voltage VSD*6 VGS = 0V, IS = 1.67A - - 1.2 V

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SH8KA2 Datasheet

l Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power

Resistance vs. Pulse Width dissipation

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SH8KA2 Datasheet

l Electrical characteristic curves

Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)

Fig.7 Breakdown Voltage vs. Junction

Temperature

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SH8KA2 Datasheet

l Electrical characteristic curves

Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction
Temperature

Fig.10 Forward Transfer Admittance vs.

Drain Current

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SH8KA2 Datasheet

l Electrical characteristic curves

Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

Fig.13 Static Drain - Source On - State

Resistance vs. Junction Temperature

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SH8KA2 Datasheet

l Electrical characteristic curves

Fig.14 Static Drain - Source On - State Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I) Resistance vs. Drain Current(II)

Fig.16 Static Drain - Source On - State

Resistance vs. Drain Current(III)

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SH8KA2 Datasheet

l Electrical characteristic curves

Fig.17 Typical Capacitance vs. Drain - Fig.18 Switching Characteristics

Source Voltage

Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain
Voltage

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SH8KA2 Datasheet

l Measurement circuits <It is the same for the Tr1 and Tr2>

Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

l Notice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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SH8KA2 Datasheet

l Dimensions

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7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
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For details, please refer to ROHM Mounting specification

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