Experiment 5
Experiment 5
it is said to be
higher potential with respect to the p-region,
reverse
24/04/2018
ExPERIMENT 16
P ROCEDURE
1. Note the range and least count of the given voltmeter (V).
milliammeter (mA) and the microammeter (uA).
2. Remove the insulating layers
from the connecting wires
and leads of diode using a
sand paper. R
ww
3. Connect the variable voltage
power supply, p-n junctioon
diode, voltmeter, milliammeter,
resistor and a plug key in a mA
circuit as shown in Fig. E 16.1.
4. Initially when the key is open.
you would note at this stage. that
K
no current is flowing through the
circuit. Now close the key. Fig. E16.1 Forward biastng
for ap-njunction diode
5. Give a small voltage to the circuit
by slight and gentle turning of
the power supply knob. Note the voltmeter reading across the
diode and the corresponding milliammeter reading to find the
current Iflowing through the diode.
6. Gradually, increase the applied voltage (in steps) in
the circuit and note the corresponding voltmeter and milliammeter
readings in Table E 16.1.
The value of current flowing through the diode would be negligibly
small till the voltage across the diode exceeds the value of its cut in
or threshold voltage. After the
cut
in voltage, the variation in current
will be rapid.
7. Once the threshold voltage is
reached, vary the diode voltage
very slowly (preferably in steps of
0.1V) noting the corresponding
current I flowing through the HA
diode. Continue increasing voltage
till the current reaches the limit of
the milliammeter.
8. Now disconnect the circuit K E
and make the connections as
shown in Fig. E 16.2 for the reverse
bias characteristics. Connect p-side ig. E 16.2 Reverse biasing Jor a p-njunction
of p-n junction diode to the diode
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LABORATORY MLANUAL
BSERVATIONS
1. p-njunction diode used (diode no.) = ...
20
122
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ExPERIMENT 16
20
PLOTTING GRAPH
1. Plot a graph between
I(mA)
forward voltage across the
diode (V) along the
positive x-axis and current
flowing through the diode
() along the positive
y-axis. The graph as
shown in Fig. E 16.3
represents a typical I-V
characteristic of a silicon
8
diode used. Locate the 100 80 60 40 20
0.2 0.4 0.6 0.8 1.0
knee and determine the
V
cut-in voltage. 10
20
2. Now plot the reverse
voltage (V,) along the 30
negative x-axis and the
corresponding current (in AA)
LA) along the negative
y-axis as shown in Fig. E 16.3 Typical 1-V characterlstics of a silicon
diode in Jorward biasing and reverse
Fig. E 16.3. Determine the
reverse saturation current.
biasing
RESULTA. The value of cut-in voltage for the given diode is ... V.
PRECAUTIO
1. Find out manufacturer's specification for maximum permissible
123
current through the given diode in forward blas. Take care not to
exceed this limit.
2. Find out manufacturers specification for maximum reverse voltage
to be to the diode. Take care not to exceed this limit.
applied
3. It is inmportant to take care that the potential difference across the
diode is increased gradually, in small steps. Keep your eyes on
the ammeter and let the current not exceed the specified limt.
JISCUSSION
If we use different diodes (Ge or Si), what change do you observe in
the I - Vcharacteristics? Does the threshold voltage / cut-in voltage of
the diode depend on the material of the diode?
DELF ASSESSMENT
1. How can operate diode as a switch or as a rectifier?
you
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sUGGESTED ADDITIONAL EXPERIMENTS/ACTIVITIESs
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